LL4148

DATA SHEET LL4148 FAST SWITCHING SURFACE MOUNT DIODES VOLTAGE 75 V POWER 500 mW FEATURES z FAST SWITCHING SPEED z SURFACE MOUNT PACKAGE IDEALLY SUITED FOR AUTOMATIC INSERTION z SILICON EPITAXAL PLANAR CONSTRUCTION z LEAD FREE AND HALOGEN-FREE MECHANICAL DATA z CASE: MINI MELF ,GLASS z TERMINALS: SOLDERABLE PER MIL-STD-202E, METHOD 208 z POLARITY: CATHODE BAND z MARKING: CATHODE BAND ONLY z WEIGHT: 0.05 GRAMS CASE：MINI-MELF MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED. PARAMETER SYMBOL MAXIMUM REVERSE VOLTAGE VR PEAK REVERSE VOLTAGE VRM RMS VOLAGE VRMS MAXIMUM AVERAGE FORWARD CURRENT AT TA=25°C IAV AND f >=50Hz IFSM PEAK FORWARD SURGE CURRENT < 1s AND TJ =25°C MAXIMUM THERMAL RESISTANCE RθJA PTOT POWER DISSIPATION DERATE ABOVE 25°C OPERATING JUNCTION AND STORAGE TEMPERATURE RANGE TJ, TSTG ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED) PARAMETER SYMBOL MAXIMUM FORWARD VOLTAGE AT 10mA VF VR=20V MAXIMUM DC REVERSE CURRENT VR=75V IR VR=20V, TJ =150°C JUNCTION CAPACITANCE (NOTE.1) MAXIMUM REVERSE RECOVERY TIME (NOTE.2) NOTE: 1. CJ AT VR =0V, f =1MHz 2. FROM IF =10mA TO IR =1mA, VR = 6V, RL=100Ω CJ TRR VALUE 75 100 50 UNITS V V V 150 mA 500 350 500 - 65 to + 175 °C /W mW VALUE 1.0 25 UNITS V nA 5 μA 50 μA pF nS 4.0 4.0 mA °C PAGE.1 TJ=25°C f=1KHz TA=125°C 1000 100 FORWARD CURRENT, (mA) FORWARD RESISTANCE, (Ω) 10000 TA=75°C TA=25°C 10 TA=-25°C 1 0.01 0.1 1 10 1000 TA=125°C 100 10 1 TA=75°C 0.1 TA=25°C 0.01 0 100 1 FORWARD CURRENT, (mA) FORWARD VOLTAGE, (V) Fig.1-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT Fig.2-FORWARD CHARACTERISTICS 500 5 400 4 CAPACITANCE, (PF) POWER DISSIPATION, (mW) 2 300 200 100 0 3 2 TJ=25°C f=1KHz 1 0 0 100 AMBIENT TEMPERATURE, (°C) Fig.3-DERATING CURVE 200 0 2 4 6 8 10 REVERSE VOLTAGE, (V) Fig.4-TYPICAL JUNCTION CAPACITANCE PAGE.2 MINI-MELF DIMENSION Symbol L L1 Φ Dimensions In Millimeters Min Max 3.40 3.60 0.28 0.48 1.40 1.60 Dimensions In Inches Min Max 0.134 0.142 0.011 0.019 0.055 0.063 PAGE.3