HSS3400A

HSS3400A Description Product Summary The HSS3400A is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS3400A meet the RoHS and Green Product VDS 30 V RDS(ON),max 26 mΩ ID 5.5 A requirement with full function reliability approved. l l l l Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology SOT23 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM ±12 V Continuous Drain Current, VGS @ 4.5V 1 5.5 A Continuous Drain Current, VGS @ 4.5V 1 4.5 A 22 A 1.0 W Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.hs-semi.cn Thermal Resistance Junction-Case Ver 2.0 1 Typ. Max. Unit --- 100 ℃/W --- 80 ℃/W 1 HSS3400A Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.029 --- V/℃ VGS=10V , ID=5.9A --- 19 26 VGS=4.5V , ID=5A --- 23 31 VGS=2.5V , ID=4A mΩ --- 38 48 0.7 0.9 1.4 V --- -2.82 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=3A --- 19 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω Qg Total Gate Charge (4.5V) --- 3.74 --- Qgs Gate-Source Charge --- 0.62 --- Qgd Gate-Drain Charge --- 1.82 --- Turn-On Delay Time --- 6.5 --- Td(on) VDS=15V , VGS=4.5V , ID=3A uA nC Rise Time VDD=15V , VGS=4.5V , RG=3.3Ω --- 2 --- Turn-Off Delay Time ID=3A --- 28.6 --- Fall Time --- 2.6 --- Ciss Input Capacitance --- 614 --- Coss Output Capacitance --- 78 --- Crss Reverse Transfer Capacitance --- 61 --- Min. Typ. Max. Unit --- --- 5.5 A --- --- 22 A --- --- 1.2 V --- 6.8 --- nS --- 2.3 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current Pulsed Source Current 2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,4 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=3A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSS3400A www.hs-semi.cn Ver 2.0 3 HSS3400A www.hs-semi.cn Ver 2.0 4 HSS3400A Ordering Information Part Number HSS3400A www.hs-semi.cn Package code SOT-23 Ver 2.0 Packaging 3000/Tape&Reel 5