HSS3416E

HSS3416E N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS3416E is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS3416E meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ VDS 20 V RDS(ON),TYP 20 mΩ ID 6 A SOT23 Pin Configuration Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology ESD Protected 2KV Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V1 6.0 A ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V1 5.0 A IDM Pulsed Drain Current2 22 A PD@TA=25℃ Total Power Dissipation3 1 W PD@TA=70℃ Total Power Dissipation3 0.66 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient 1 120 ℃/W www.hs-semi.cn Ver 2.0 1 HSS3416E N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.018 --- V/℃ VGS=4.5V , ID=4A --- 20 25 VGS=2.5V , ID=3A --- 26 33 0.6 0.8 1.0 V --- -3.1 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 30 --- S Qg Total Gate Charge (4.5V) --- 8.6 --- Qgs Gate-Source Charge --- 1.37 --- Qgd Gate-Drain Charge --- 2.3 --- VDS=15V , VGS=4.5V , ID=4A uA nC --- 5.2 --- Rise Time VDS=10V , VGS=4.5V , RG=3.3 --- 34 --- Turn-Off Delay Time ID=4A --- 23 --- Fall Time --- 9.2 --- Ciss Input Capacitance --- 670 --- Coss Output Capacitance --- 75 --- Crss Reverse Transfer Capacitance --- 68 --- Min. Typ. Max. Unit --- --- 6 A --- --- 17 A --- --- 1.2 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,4 ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSS3416E N-Ch 20V Fast Switching MOSFETs Typical Characteristics 45 18 16 VGS=4.5V 14 40 VGS=3V 12 VGS=2.5V RDSON (mΩ) ID Drain Current (A) ID=4A VGS=5V 35 10 8 VGS=1.8V 30 6 4 25 2 20 0 0 0.5 1 1.5 VDS , Drain-to-Source Voltage (V) 1 2 5 7 9 11 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 6 IS Source Current(A) 3 4 TJ=175℃ TJ=25℃ 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 1.2 Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics diode Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1 0.6 0.2 -50 0 50 100 150 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSS3416E N-Ch 20V Fast Switching MOSFETs 1000 100.00 Ciss 100us 100 10ms ID (A) Capacitance (pF) 10.00 Coss 100ms 1.00 1s Crss 0.10 DC TA=25℃ Single Pulse F=1.0MHz 10 1 4 7 10 13 16 19 0.01 22 0.1 VDS Drain to Source Voltage (V) 1 Fig.7 Capacitance 10 VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TA + PDM x RθJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 HSS3416E N-Ch 20V Fast Switching MOSFETs Ordering Information Part Number HSS3416E www.hs-semi.cn Package code SOT-23L Ver 2.0 Packaging 3000/Tape&Reel 5