HSS3401A

HSS3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSS3401A is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS3401A meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology VDS -30 V RDS(ON),max 53 mΩ ID -4.3 A SOT 23 Pin Configurations Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current -4.3 A ID@TA=70℃ Continuous Drain Current -3.6 A -20 A 1.0 W IDM PD@TA=25℃ PD@TA=70℃ Pulsed Drain Current2 Total Power Dissipation Total Power 3 Dissipation3 0.9 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA www.hs-semi.cn Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Ver 2.0 Typ. Max. Unit --- 125 ℃/W --- 85 ℃/W 1 HSS3401A P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance 2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-10V , ID=-3A --- --- 53 VGS=-4.5V , ID=-3A --- --- 60 VGS=-2.5V , ID=-2A --- --- 80 -0.5 1.0 -1.2 V --- 2.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 5.6 --- S Qg Total Gate Charge (-4.5V) --- 11.9 --- --- 1.8 --- VDS=-15V , VGS=-4.5V , ID=-3A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 3 --- Turn-On Delay Time --- 6.6 --- Td(on) uA nC Rise Time VDD=-15V , VGS=-4.5V , --- 27.8 --- Turn-Off Delay Time RG=3.3, ID=-3A --- 46.2 --- Fall Time --- 20.6 --- Ciss Input Capacitance --- 920 --- Coss Output Capacitance --- 73 --- Crss Reverse Transfer Capacitance --- 71 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- -4.3 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current 1,4 Diode Forward Voltage 2 Conditions Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSS3401A P-Ch 30V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse diode Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn Ver 2.0 3 HSS3401A P-Ch 30V Fast Switching MOSFETs 100us -ID (A) 10m 100m 1s D TA=25℃ -VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 HSS3401A P-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSS3401A www.hs-semi.cn Package code SOT-23 Ver 2.0 Packaging 3000/Tape&Reel 5