HSBA6048
N-Ch 60V Fast Switching MOSFETs
Description
Product Summary
The HSBA6048 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The HSBA6048 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
VDS
60
V
RDS(ON),max
3.6
mΩ
ID
85
A
PRPAK5X6 Pin Configuration
⚫
⚫
⚫
⚫
⚫
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
85
A
ID@TC=25℃
ID@TC=100℃
Continuous Drain
Current 1,6
Continuous Drain
Current 1,6
66
A
IDM
Pulsed Drain Current2
240
A
EAS
Single Pulse Avalanche Energy3
101
mJ
IAS
Avalanche Current
45
A
83
W
PD@TC=25℃
Total Power
Dissipation4
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-Ambient
RθJC
Thermal Resistance Junction-Case1
www.hs-semi.cn
Ver 2.0
Typ.
1
Max.
Unit
---
55
℃/W
---
1.5
℃/W
1
HSBA6048
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
VGS(th)
IDSS
Gate Threshold Voltage
Drain-Source Leakage Current
Conditions
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
60
---
---
V
VGS=10V , ID=20A
---
3.0
3.6
m
VGS=4.5V , ID=15A
---
4.4
5.4
m
VGS=VDS , ID =250uA
1.2
---
2.3
V
VDS=48V , VGS=0V , TJ=25℃
---
---
1
VDS=48V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=20A
---
65
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
0.7
---
Qg
Total Gate Charge (10V)
---
58
---
Qgs
Gate-Source Charge
---
16
---
Qgd
Gate-Drain Charge
---
4
---
---
18
---
Td(on)
VDS=30V , VGS=10V , ID=20A
Turn-On Delay Time
nC
Rise Time
VDD=30V , VGS=10V , RG=3,
---
8
---
Turn-Off Delay Time
ID=20A
---
50
---
Fall Time
---
10.5
---
Ciss
Input Capacitance
---
3458
---
Coss
Output Capacitance
---
1522
---
Crss
Reverse Transfer Capacitance
---
22
---
Min.
Typ.
Max.
Unit
VG=VD=0V , Force Current
---
---
55
A
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
---
24
---
nS
---
85
---
nC
Tr
Td(off)
Tf
VDS=30V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
IS
VSD
Parameter
Continuous Source
Diode Forward
Current 1,5
Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Conditions
IF=20A , dI/dt=100A/µs , TJ=25℃
Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V DD=50V,VGS=10V,L=0.1mH,IAS=40A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as ID and I DM , in real applications , should be limited by total power dissipation.
6.The maximum current rating is package limited.
www.hs-semi.cn
Ver 2.0
2
HSBA6048
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
Fig.3 Diode Forward Voltage vs. Current
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized VGS(th) vs TJ
Fig.6 Normalized RDSON vs TJ
www.hs-semi.cn
Ver 2.0
3
HSBA6048
N-Ch 60V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P DM
SINGLE
T ON
T
D = TON/T
TJpeak = TC+P DMXRθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=
VDS
90%
1
L x IAS2 x
2
BVDSS
BVDSS-VDD
BVDSS
VDD
IAS
10%
VGS
Td(on)
Tr
Ton
Td(off)
Tf
Toff
VGS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
Waveform
www.hs-semi.cn
Ver 2.0
4
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