SEMF05LC

SHANGHAI August 2005 MICROELECTRONICS CO., LTD. SEMFXXXLC Low Capacitance Quad Array for ESD Protection Description Revision:A General Description Features This integrated transient voltage suppressor z Four Separate Unidirectional Configurations for transient overvoltage protection, printers, business z Low Leakage Current < 1 μA machines, medical z Power Dissipation: 380mW equipment, and other applications. Its integrated z Small SOT-353 SMT Package design reliable z Low Capacitance protection for separate lines using only one z Complies to USB 1.1 Low Speed & Speed device (TVS) is designed for applications requiring communication provides very systems, effective and Protection package. These devices are ideal for situations Specifications z where board space is at a premium. These are Pb-Free Devices Applications z Serial and Parallel Ports Complies with the following standards z Microprocessor Based Equipment IEC61000-4-2 z Notebooks, Desktops, Servers Level 4 z Cellular and Portable Equipment 15 kV (air discharge) 8 kV(contact discharge) MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) Functional diagram SOT-353 Maximum Ratings (TA=25°C) Symbol Parameter Value Units PPK Peak Power Dissipation(8×20μs@TA=25℃) 30 W PD Steady State Power-1 Diode 380 mW Thermal Resistance, Junction-to-Ambient 327 ℃/W 3.05 Mw/℃ 150 ℃ -55 to +150 ℃ 260 ℃ RθJA Above 25℃, Derate TJmax Maximum Junction Temperature TJ Tstg Operation Junction and Storage Temperature Range TL Lead Solder Temperature(10 seconds duration) ShangHai Sino-IC Microelectronics Co., Ltd. 1. SEMFXXXLC Electrical Parameter Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IT VBR Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Test Current Breakdown Voltage @ IT IF Forward Current VF Forward Voltage @ IF Electrical Characteristics Part Numbers VBR Min. Typ. VF Max. IT VRWM IR Max. C IF Typ. 0v bias V V V mA V µA V mA pF SEMF3V3LC 5.3 5.6 5.88 1 3.3 1.0 1.25 200 28 SEMF05LC 6.47 6.8 7.14 1 5.0 1.0 1.25 200 19 1. Non-repetitive current per Figure 1. 2. Only 1 diode under power. For 4 diodes under power 3. Capacitance of one diode at f=1MHz,TA=25℃ Typical Characteristics Figure 1 Pulse Width ShangHai Sino-IC Microelectronics Co., Ltd. Figure 2 Power Derating Curve 2. SEMFXXXLC Figure 3 Reverse Leakage versus temperature Figure 5 8*20 Pulse Waveform Figure 4 Capacitance Figure 6 Forward Voltage SOT-353 Mechanical Data ShangHai Sino-IC Microelectronics Co., Ltd. 3. SEMFXXXLC The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 4.