FS2302A

FS2302A N-Channel SMD MOSFET Product Summary V(BR)DSS RDS(on)MAX 75mΩ@4.5V 20V 105mΩ@2.5V ID 2.6A Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram D S G SOT-23 Marking A2SHB www.fuxinsemi.com Page 1 Ver2.1 FS2302A N-Channel SMD MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID 2.6 A Pulsed Drain Current IDM 10 A Power Dissipation PD 1.2 W Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1.0 µA Gate-body leakage current IGSS VGS =±8V, VDS = 0V ±100 nA Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 1.5 V Drain-source on-resistance1) RDS(on) 0.4 VGS =4.5V, ID =2.6A 75 85 VGS =2.5V, ID =2A 105 120 mΩ Dynamic characteristics2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) 280 VDS =10V,VGS =0V,f =1MHz 46 pF 29 VDS =10V,VGS =4.5V, ID =2.6A 2.9 0.4 nC 0.6 13 VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω tf 54 nS 18 11 Source-Drain Diode characteristics Diode Forward Current1) Diode Forward voltage IS VDS VGS =0V, IS=2.6A 2.6 A 1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. www.fuxinsemi.com Page 2 Ver2.1 FS2302A N-Channel SMD MOSFET Typical Characteristics Transfer Characteristics Output Characteristics 20 VGS=3.5、3.0、2.5V 10 Ta=25℃ Ta=25℃ Pulsed Pulsed 8 15 (A) VGS=1.5V 5 ID 10 6 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=2.0V 4 2 0 0 2 4 6 DRAIN TO SOURCE VOLTAGE RDS(ON) 120 —— 8 VDS 0 0.0 10 (V) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE RDS(ON) ID —— 2.0 VGS VGS 300 Ta=25℃ Ta=25℃ Pulsed Pulsed 250 (mΩ) 200 RDS(ON) 80 VGS=2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 100 60 VGS=4.5V 40 20 2.5 (V) 150 100 ID=3.6A 50 0 5 10 15 DRAIN CURRENT 10 IS —— 20 ID 25 30 0 (A) 0 2 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) VSD Ta=25℃ SOURCE CURRENT IS (A) Pulsed 1 0.1 0.0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE www.fuxinsemi.com 1.6 VSD 2.0 (V) Page 3 Ver2.1 FS2302A N-Channel SMD MOSFET SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 2.000 0.071 e e1 0.950 TYP. 1.800 L L1 www.fuxinsemi.com 0.037 TYP. 0.550 REF. 0.300 0.079 0.022 REF. 0.500 Page 4 0.012 0.020 Ver2.1