P25Q32H Datasheet
P25Q32H
Ultra Low Power, 32M-bit
Serial Multi I/O Flash Memory Datasheet
Dec. 01, 2017
Performance Highlight
Wide Supply Range from 2.3 to 3.6V for Read, Erase and Program
Ultra Low Power consumption for Read, Erase and Program
X1, X2 and X4 Multi I/O, QPI Support
High reliability with 100K cycling and 20 Year-retention
Puya Semiconductor (Shanghai) Co., Ltd
Puya Semiconductor
Page 1 of 93
P25Q32H Datasheet
Contents
1
2
3
Overview ........................................................................................................................................................4
Description .....................................................................................................................................................5
Pin Definition .................................................................................................................................................6
3.1
Pin Configurations .............................................................................................................................6
3.2
Pin Descriptions .................................................................................................................................6
4 Block Diagram ...............................................................................................................................................7
5 Electrical Specifications .................................................................................................................................8
5.1
Absolute Maximum Ratings ...............................................................................................................8
5.2
DC Characteristics .............................................................................................................................9
5.3
AC Characteristics .......................................................................................................................... 10
5.4
AC Characteristics for Program and Erase ..................................................................................... 11
5.5
Operation Conditions ...................................................................................................................... 13
6 Data Protection ........................................................................................................................................... 15
7 Memory Address Mapping .......................................................................................................................... 18
8 Device Operation ........................................................................................................................................ 19
9 Hold Feature ............................................................................................................................................... 21
10
Commands ......................................................................................................................................... 22
10.1 Commands listing ........................................................................................................................... 22
10.2 Write Enable (WREN) ..................................................................................................................... 26
10.3 Write Disable (WRDI) ....................................................................................................................... 27
10.4 Write Enable for Volatile Status Register ....................................................................................... 28
10.5 Read Status Register (RDSR) .......................................................................................................... 29
10.6 Read Configure Register (RDCR) .................................................................................................... 31
10.7 Active Status Interrupt (ASI) ........................................................................................................... 33
10.8 Write Status Register (WRSR) ......................................................................................................... 33
10.9 Write Configure Register (WRCR) .................................................................................................... 35
10.10 Read Data Bytes (READ) ................................................................................................................. 36
10.11 Read Data Bytes at Higher Speed (FAST_READ) ............................................................................ 37
10.12 Read Data Bytes at Higher Speed in QPI mode ............................................................................... 38
10.13 Dual Read Mode (DREAD) .............................................................................................................. 39
10.14 2 X IO Read Mode (2READ) ............................................................................................................ 40
10.15 2 X IO Read Performer Enhance Mode ............................................................................................ 41
10.16 Quad Read Mode (QREAD) ............................................................................................................. 42
10.17 4 X IO Read Mode (4READ) ............................................................................................................ 43
10.18 4 X IO Read Performance Enhance Mode ....................................................................................... 44
10.19 Burst Read....................................................................................................................................... 45
10.20 4 X IO Read in QPI mode................................................................................................................. 46
10.21 4 X IO Word Read(E7h) ................................................................................................................... 47
10.22 4 X IO Octal Word Read(E3h) .......................................................................................................... 49
10.23 Set Read Parameters (C0h) ............................................................................................................. 50
10.24 Burst Read with Wrap (0Ch)............................................................................................................. 51
10.25 Enable QPI (38H)............................................................................................................................. 52
10.26 Disable QPI (FFH) ........................................................................................................................... 52
10.27 Page Erase (PE) .............................................................................................................................. 53
10.28 Sector Erase (SE) ............................................................................................................................ 54
10.29 Block Erase (BE32K) ....................................................................................................................... 55
10.30 Block Erase (BE).............................................................................................................................. 56
10.31 Chip Erase (CE) ............................................................................................................................... 57
10.32 Page Program (PP).......................................................................................................................... 58
10.33 Dual Input Page Program (DPP) ...................................................................................................... 59
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Page 2 of 93
P25Q32H Datasheet
10.34 Quad Page Program (QPP) ............................................................................................................. 60
10.35 Erase Security Registers (ERSCUR) ................................................................................................ 61
10.36 Program Security Registers (PRSCUR) ........................................................................................... 62
10.37 Read Security Registers (RDSCUR) ................................................................................................ 63
10.38 Deep Power-down (DP) ................................................................................................................... 64
10.39 Release form Deep Power-Down (RDP), Read Electronic Signature (RES) ...................................... 65
10.40 Read Electronic Manufacturer ID & Device ID (REMS) ..................................................................... 67
10.41 Dual I/O Read Electronic Manufacturer ID & Device ID (DREMS) .................................................... 68
10.42 Quad I/O Read Electronic Manufacturer ID & Device ID (QREMS)................................................... 69
10.43 Read Identification (RDID)................................................................................................................ 70
10.44 Program/Erase Suspend/Resume .................................................................................................... 71
10.45 Erase Suspend to Program .............................................................................................................. 72
10.46 Program Resume and Erase Resume .............................................................................................. 74
10.47 No Operation (NOP) ........................................................................................................................ 74
10.48 Individual Block Lock (SBLK) ........................................................................................................... 75
10.49 Individual Block Unlock (SBULK)...................................................................................................... 76
10.50 Read Block Lock Status (RDBLK) .................................................................................................... 77
10.51 Global Block Lock (GBLK)................................................................................................................ 78
10.52 Global Block Unlock (GBULK) .......................................................................................................... 79
10.53 Software Reset (RSTEN/RST) ......................................................................................................... 80
10.54 RESET ............................................................................................................................................ 81
10.55 Read Unique ID (RUID) ................................................................................................................... 82
10.56 Read SFDP Mode (RDSFDP) .......................................................................................................... 83
11
Ordering Information........................................................................................................................... 88
12
Package Information........................................................................................................................... 89
12.1 8-Lead SOP(150mil) ....................................................................................................................... 89
12.2 8-Lead SOP(208mil) ....................................................................................................................... 90
12.3 8-Lead TSSOP ............................................................................................................................... 91
12.4 8-Land WSON(6x5mm) .................................................................................................................. 92
13
Revision History.................................................................................................................................. 93
Puya Semiconductor
Page 3 of 93
P25Q32H Datasheet
1 Overview
General
Single 2.3V to 3.60V supply
Industrial Temperature Range -40C to 85C
Serial Peripheral Interface (SPI) Compatible: Mode 0 and Mode 3
Single, Dual, Quad SPI, QPI
-
Standard SPI:
SCLK,CS#,SI,SO,WP#,HOLD#
-
Dual SPI:
SCLK,CS#,IO0,IO1,WP#, HOLD#
-
Quad SPI:
SCLK,CS#,IO0,IO1,IO2,IO3
-
QPI:
SCLK,CS#,IO0,IO1,IO2,IO3
Flexible Architecture for Code and Data Storage
-
Uniform 256-byte
Page Program
-
Uniform 256-byte
Page Erase
-
Uniform 4K-byte
Sector Erase
-
Uniform 32K/64K-byte Block Erase
-
Full Chip Erase
Hardware Controlled Locking of Protected Sectors by WP Pin
One Time Programmable (OTP) Security Register
3*1024-Byte Security Registers With OTP Lock
128 bit unique ID for each device
Fast Program and Erase Speed
-
2ms
Page program time
-
8ms
Page erase time
-
8ms
4K-byte sector erase time
-
8ms
32K-byte block erase time
-
8ms
64K-byte block erase time
JEDEC Standard Manufacturer and Device ID Read Methodology
Ultra Low Power Consumption
-
0.6uA
Deep Power Down current
-
9uA
Standby current
-
2.5mA
Active Read current at 33MHz
-
3.0mA
Active Program or Erase current
High Reliability
-
100,000 Program / Erase Cycles
-
20-year Data Retention
Industry Standard Green Package Options
-
8-pin
SOP (150mil/208mil)
-
8-land
WSON (6x5mm)
-
8-pin
TSSOP
-
WLCSP
-
KGD for SiP
Puya Semiconductor
Page 4 of 93
P25Q32H Datasheet
2 Description
The P25Q32H is a serial interface Flash memory device designed for use in a wide variety of high-volume
consumer based applications in which program code is shadowed from Flash memory into embedded or
external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is
ideal for data storage as well, eliminating the need for additional data storage devices.
The erase block sizes of the device have been optimized to meet the needs of today's code and data storage
applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently.
Because certain code modules and data storage segments must reside by themselves in their own erase
regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash
memory devices can be greatly reduced. This increased memory space efficiency allows additional code
routines and data storage segments to be added while still maintaining the same overall device density.
The device also contains an additional 3*1024-byte security registers with OTP lock (One-Time
Programmable), can be used for purposes such as unique device serialization, system-level Electronic Serial
Number (ESN) storage, locked key storage, etc.
Specifically designed for use in many different systems, the device supports read, program, and erase
operations with a wide supply voltage range of 2.3V to 3.6V. No separate voltage is required for programming
and erasing.
Puya Semiconductor
Page 5 of 93
P25Q32H Datasheet
3 Pin Definition
3.1 Pin Configurations
CS#
1
8
SO
2
7
WP#
3
6
SLCK
4
5
SI
GND
VCC
HOLD#/RESET#
CS#
1
8
SO
2
7
WP#
3
6
SLCK
4
5
SI
GND
8-PIN SOP (150mil/208mil) and TSSOP
VCC
HOLD#/RESET#
8-Land UDFN (2x3mm/6x5mm)
3.2 Pin Descriptions
No.
Symbol
1
CS#
2
SO
SIO1
3
WP#
SIO2
4
GND
-
5
SI
SIO0
6
SCLK
-
7
HOLD#/RESET#
SIO3
8
Vcc
-
Puya Semiconductor
Extension
Remarks
Chip select
Serial data output for 1 x I/O
Serial data input and output for 4 x I/O read mode
Write protection active low
Serial data input and output for 4 x I/O read mode
Ground of the device
Serial data input for 1x I/O
Serial data input and output for 4 x I/O read mode
Serial interface clock input
Hardware Reset Pin Active low or to pause the device
without deselecting the device
Serial data input and output for 4 x I/O read mode
Power supply of the device
Page 6 of 93
P25Q32H Datasheet
4 Block Diagram
CS#
High Voltage Generator
Serial Bus
Control Logic
SCK
Data buffer
SI
SO
Control &
Logic
WP#
Address Latch
X -DECODER
Interface
Flash Memory Array
HOLD#
/Reset
Serial MUX &
I/O buffers
Control and
Protection logic
VCC
GND
Puya Semiconductor
Y-DECODER
Page 7 of 93
P25Q32H Datasheet
5 Electrical Specifications
5.1 Absolute Maximum Ratings
NOTICE: Stresses above those listed under “Absolute
Storage Temperature .......................-65°C to +150°C
Operation Temperature ....................-40°C to +85°C
Maximum Operation Voltage............. 4.0V
Voltage on Any Pin with
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation
of the device at those or any other conditions above those
indicated in the operational listings of this specification is not
respect to Ground. ..........................-0.6V to + 4.1V
implied. Exposure to maximum rating conditions for
DC Output Current ............................5.0 mA
extended periods may affect device reliability.
[1]
Table 5-1 Pin Capacitance
Symbol
Parameter
Max.
Units
Test Condition
COUT
Output Capacitance
8
pF
VOUT=GND
CIN
Input Capacitance
6
pF
VIN=GND
Note:
1.
Test Conditions: TA = 25°C, F = 1MHz, Vcc = 3.0V.
Figure 5-1 Maximum Overshoot Waveform
Maximum Negative Overshoot Waveform
Maximum Positive Overshoot Waveform
VCC+0.5V
20ns
0V
VCC
20ns
- 0.6V
Figure 5-2 Input Test Waveforms and Measurement Level
Input timing reference level
0.8VCC
Output timing reference level
0.7VCC
AC MeasurementLevel
0.5VCC
0.3VCC
0.2VCC
Note:Input pulse rise and fall time ara < 5ns
Figure 5-3 Output Loading
DEVICE
UNDER
TEST
25K ohm
VCC
CL
25K ohm
CL = 15/30pF Including jig capacitance
Puya Semiconductor
Page 8 of 93
P25Q32H Datasheet
5.2 DC Characteristics
Table 5-2 DC parameters
Sym.
Parameter
IDPD
Deep power down
current
ISB
Standby current
ICC1
Low power read
current (03h)
ICC2
Read current (0Bh)
ICC3
ICC4
Conditions
2.3V to 3.6V
Min.
CS#=Vcc, all other inputs
at 0V or Vcc
CS#, HOLD#, WP#=VIH all
inputs at CMOS levels
Typ.
Max.
0.6
3.0
10
Units
uA
uA
f=1MHz; IOUT=0mA
2.0
3.0
mA
f=33MHz; IOUT=0mA
2.0
4.0
mA
f=50MHz; IOUT=0mA
2.5
4.0
mA
f=85MHz; IOUT=0mA
2.5
4.5
mA
Program current
CS#=Vcc
3.0
5.0
mA
Erase current
CS#=Vcc
3.0
5.0
mA
ILI
Input load current
All inputs at CMOS level
1.0
uA
ILO
Output leakage
All inputs at CMOS level
1.0
uA
VIL
Input low voltage
0.3Vcc
V
VIH
Input high voltage
VOL
Output low voltage
IOL=100uA
VOH
Output high voltage
IOH=-100uA
0.7Vcc
V
0.2
Vcc-0.2
V
V
Note
1. Typical values measured at 3.0V @ 25°C.
Puya Semiconductor
Page 9 of 93
P25Q32H Datasheet
5.3 AC Characteristics
Table 5-3 AC parameters
Symbol
Alt.
fSCLK
fC
fRSCLK
fR
fT
fTSCLK
fQ
fQPP
tCH(1)
tCL(1)
tCLCH(7)
tCHCL(7)
tSLCH
tCLH
tCLL
tCSS
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tDSU
tDH
tSHSL
tCSH
tSHQZ(7)
tDIS
tCLQV
tV
tCLQX
tHLCH
tCHHH
tHHCH
tCHHL
tHHQX
tHLQZ
tWHSL(3)
tSHWL(3)
tDP
tHO
tLZ
tHZ
tRES1
tRES2
tW
tReady
Puya Semiconductor
2.3V~3.6V
min
typ
max
Unit
120
MHz
55
120
MHz
MHz
104
MHz
120
4.0
4.0
0.1
0.1
5
MHz
ns
ns
v/ns
v/ns
ns
CS# Not Active Hold Time (relative to SCLK)
5
ns
Data In Setup Time
Data In Hold Time
CS# Active Hold Time (relative to SCLK)
CS# Not Active Setup Time (relative to SCLK)
CS# Deselect Time From Read to next Read
CS# Deselect Time From Write,Erase,Program to
Read Status Register
Output Disable Time
Clock Low to Output Valid Loading 30pF
Clock Low to Output Valid Loading 15pF
Output Hold Time
HOLD# Active Setup Time (relative to SCLK)
HOLD# Active Hold Time (relative to SCLK)
HOLD# Not Active Setup Time (relative to SCLK)
HOLD# Not Active Hold Time (relative to SCLK)
HOLD# to Output Low-Z
HOLD# to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
CS# High to Deep Power-down Mode
CS# High To Standby Mode Without Electronic
Signature Read
CS# High To Standby Mode With Electronic Signature
Read
Write Status Register Cycle Time
Reset recovery time(for erase/program operation
except WRSR)
Reset recovery time(for WRSR operation)
2
3
5
5
20
ns
ns
ns
ns
ns
30
ns
Parameter
Clock Frequency for the following instructions:
FAST_READ, RDSFDP, PP, SE, BE32K, BE, CE, DP, RES,
WREN, WRDI, RDID, RDSR, WRSR(7)
Clock Frequency for READ instructions
Clock Frequency for 2READ,DREAD instructions
Clock Frequency for 4READ,QREAD, QPI 0Bh,QPI
EBh,QPI 0Ch instructions
Clock Frequency for QPP (Quad page program)
Clock High Time
Clock Low Time (fSCLK) 45% x (1fSCLK)
Clock Rise Time (peak to peak)
Clock Fall Time (peak to peak)
CS# Active Setup Time (relative to SCLK)
6
7
6
3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
8
us
8
us
12
ms
0
5
5
5
5
6
6
20
100
8
30
12
us
8
ms
Page 10 of 93
P25Q32H Datasheet
5.4 AC Characteristics for Program and Erase
Table 5-4 AC parameters fro program and erase
Sym.
2.3V to 3.6V
Parameter
Min.
Typ.
Max.
Units
TESL(6)
Erase Suspend Latency
30
us
TPSL(6)
Program Suspend Latency
30
us
TPRS(4)
Latency between Program Resume and next Suspend
0.3
us
TERS(5)
Latency between Erase Resume and next Suspend
0.3
us
tPP
Page program time (up to 256 bytes)
2
3
ms
tPE
Page erase time
10
15
ms
tSE
Sector erase time
10
15
ms
tBE1
Block erase time for 32K bytes
10
15
ms
tBE2
Block erase time for 64K bytes
10
15
ms
tCE
Chip erase time
10
15
ms
Note
1. tCH + tCL must be greater than or equal to 1/ Frequency.
2. Typical values given for TA=25°C. Not 100% tested.
3. Only applicable as a constraint for a WRSR instruction.
4. Program operation may be interrupted as often as system request. The minimum timing of tPRS must be
observed before issuing the next program suspend command. However, in order for an Program operation to
make progress, tPRS ≥ 100us must be included in resume-to-suspend loop(s). Not 100% tested.
5. Erase operation may be interrupted as often as system request. The minimum timing of tERS must be
observed before issuing the next erase suspend command. However, in order for an Erase operation to make
progress, tERS ≥ 200us must be included in resume-to-suspend loop(s). Notes. Not 100% tested.
6. Latency time is required to complete Erase/Program Suspend operation.
7. The value guaranteed by characterization, not 100% tested in production.
Figure 5-4 Serial Input Timing
tSHSL
CS#
tCHSL
tSLCH
tCLH tCLL
tCHSH
tSHCH
SCLK
tDVCH
tCHDX
SI
MSB
SO
High-Z
Puya Semiconductor
tCHCL
tCLCH
LSB
Page 11 of 93
P25Q32H Datasheet
Figure 5-5 Output Timing
CS#
tCLH
SCLK
tCLQV
tCLQV
tCLQX
tSHQZ
tCLL
tCLQX
tQLQH
SO
LSB
tQHQL
SI
Least significant address bit (LIB) in
Figure 5-6 Hold Timing
CS#
tCHHL
SCLK
tHLCH
tHLQZ
SO
tCHHH
tHHCH
tHHQX
HOLD#
SI do not care during HOLD operation.
Figure 5-7 WP Timing
CS#
tWHSL
tSHWL
WP#
SCLK
SI
Write status register is allowed
Puya Semiconductor
Write status register is not allowed
Page 12 of 93
P25Q32H Datasheet
5.5 Operation Conditions
At Device Power-Up and Power-Down
AC timing illustrated in "Figure AC Timing at Device Power-Up" and "Figure Power-Down Sequence" are for
the supply voltages and the control signals at device power-up and power-down. If the timing in the figures is
ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to
be selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 5-8
AC Timing at Device Power-Up
VCC
VCC(min)
GND
tVR
tSHSL
CS#
tCHSL
tSLCH
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
LSB
MSB
SI
tCLCH
High-Z
SO
Figure 5-9 Power-up Timing
Vcc(max)
Chip Selection is not allowed
Vcc(min)
tVSL
Device is fully accessible
VWI
Time
Puya Semiconductor
Page 13 of 93
P25Q32H Datasheet
Power Up/Down and Voltage Drop
For Power-down to Power-up operation, the VCC of flash device must below VPWD for at least tPWD timing.
Please check the table below for more detail.
Figure 5-10 Power down-up Timing
Vcc(max)
Chip Selection is not allowed
Vcc(min)
tVSL
VPWD(max)
Device is fully
accessible
tPWD
Time
Symbol
Parameter
VPWD
VCC voltage needed to below VPWD for ensuring
initialization will occur
tPWD
tVSL
tVR
VWI
The minimum duration for ensuring initialization will occur
VCC(min.) to device operation
VCC Rise Time
Write Inhibit Voltage
min
300
70
1
1.45
max
unit
1
V
500000
1.55
us
us
us/V
V
Initial Delivery State
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The
Status Register contains 00h (all Status Register bits are 0).
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Page 14 of 93
P25Q32H Datasheet
6 Data Protection
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control
register architecture of the device constrains that the memory contents can only be changed after specific
command sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC
power-up and power-down or from system noise.
• Power-on reset: to avoid sudden power switch by system power supply transition, the power-on reset may
protect the Flash.
• Valid command length checking: The command length will be checked whether it is at byte base and
completed on byte boundary.
• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL)
before issuing other commands to change data.
• Software Protection Mode: The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits define the section of the
memory array that can be read but not change.
• Hardware Protection Mode: WP# going low to protected the BP0~BP4bits and SRP0~1bits
• Deep Power-Down Mode: By entering deep power down mode, the flash device is under protected from
writing all commands except the Release form Deep Power-Down Mode command.
Protected Area Sizes
Table 6-1. P25Q32H Protected Area Sizes (WPS=0,CMP bit = 0)
Status Register Content
Memory Content
BP4
BP3
BP2
BP1
BP0
Blocks
Addresses
Density
X
X
0
0
0
NONE
NONE
NONE
NONE
0
0
0
0
1
63
3F0000H-3FFFFFH
64KB
Upper 1/64
0
0
0
1
0
62 to 63
3E0000H-3FFFFFH
128KB
Upper 1/32
0
0
0
1
1
60 to 63
3C0000H-3FFFFFH
256KB
Upper 1/16
0
0
1
0
0
56 to 63
380000H-3FFFFFH
512KB
Upper 1/8
0
0
1
0
1
48 to 63
300000H-3FFFFFH
1MB
Upper 1/4
0
0
1
1
0
32 to 63
200000H-3FFFFFH
2MB
Upper 1/2
0
1
0
0
1
0
000000H-00FFFFH
64KB
Lower 1/64
0
1
0
1
0
0 to 1
000000H-01FFFFH
128KB
Lower 1/32
0
1
0
1
1
0 to 3
000000H-03FFFFH
256KB
Lower 1/16
0
1
1
0
0
0 to 7
000000H-07FFFFH
512KB
Lower 1/8
0
1
1
0
1
0 to 15
000000H-0FFFFFH
1MB
Lower 1/4
0
1
1
1
0
0 to 31
000000H-1FFFFFH
2MB
Lower 1/2
X
X
1
1
1
0 to 63
000000H-3FFFFFH
4MB
1
0
0
0
1
63
3FF000H-3FFFFFH
4KB
Top Block
1
0
0
1
0
63
3FE000H-3FFFFFH
8KB
Top Block
1
0
0
1
1
63
3FC000H-3FFFFFH
16KB
Top Block
1
0
1
0
X
63
3F8000H-3FFFFFH
32KB
Top Block
1
0
1
1
0
63
3F8000H-3FFFFFH
32KB
Top Block
1
1
0
0
1
0
000000H - 000FFFH
4KB
Bottom Block
1
1
0
1
0
0
000000H - 001FFFH
8KB
Bottom Block
1
1
0
1
1
0
000000H - 003FFFH
16KB
Bottom Block
1
1
1
0
X
0
000000H - 007FFFH
32KB
Bottom Block
1
1
1
1
0
0
000000H - 007FFFH
32KB
Bottom Block
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Portion
ALL
Page 15 of 93
P25Q32H Datasheet
Table 6-2.
P25Q32H Protected Area Sizes (WPS=0,CMP bit = 1)
Status Register Content
Memory Content
BP4
BP3
BP2
BP1
BP0
Blocks
X
X
0
0
0
ALL
000000H- 3FFFFFH
4MB
ALL
0
0
0
0
1
0 to 62
000000H- 3EFFFFH
4032KB
Lower 63/64
0
0
0
1
0
0 to 61
000000H- 3DFFFFH
3968KB
Lower 31/32
0
0
0
1
1
0 to 59
000000H- 3BFFFFH
3840KB
Lower 15/16
0
0
1
0
0
0 to 55
000000H- 37FFFFH
3584KB
Lower 7/8
0
0
1
0
1
0 to 47
000000H- 2FFFFFH
3MB
Lower 3/4
0
0
1
1
0
0 to 31
000000H- 1FFFFFH
2MB
Lower 1/2
0
1
0
0
1
1 to 63
010000H- 3FFFFFH
4032KB
Upper 63/64
0
1
0
1
0
2 to 63
020000H- 3FFFFFH
3968KB
Upper 31/32
0
1
0
1
1
4 to 63
040000H- 3FFFFFH
3840KB
Upper 15/16
0
1
1
0
0
8 to 63
080000H- 3FFFFFH
3584KB
Upper 7/8
0
1
1
0
1
16 yo 63
100000H- 3FFFFFH
3MB
Upper 3/4
200000H- 3FFFFFH
2MB
Upper 1/2
0
1
1
1
0
32 to 63
X
X
1
1
1
NONE
1
0
0
0
1
0 to 63
1
0
0
1
0
0 to 63
1
0
0
1
1
0 to 63
1
0
1
0
X
1
0
1
1
0
1
1
0
0
1
1
0
1
1
1
0
1
1
1
1
Addresses
NONE
Density
Portion
NONE
NONE
000000H-3FEFFFH
4092KB
L-1023/1024
000000H-3FDFFFH
4088KB
L-511/512
000000H-3FBFFFH
4080KB
L-255/256
0 to 63
000000H-3F7FFFH
4064KB
L- 127/128
0 to 63
000000H-3F7FFFH
4064KB
L- 127/128
1
0 to 63
001000H-3FFFFFH
4092KB
U- 1023/1024
0
0 to 63
002000H-3FFFFFH
4088KB
U- 511/512
1
1
0 to 63
004000H-3FFFFFH
4080KB
U- 255/256
1
0
X
0 to 63
008000H-3FFFFFH
4064KB
U- 127/128
1
1
0
0 to 63
008000H-3FFFFFH
4064KB
U- 127/128
Note:
1. X=don’t care
2. If any erase or program command specifies a memory that contains protected data portion, this command will be
ignored.
Puya Semiconductor
Page 16 of 93
P25Q32H Datasheet
Table 6-3.
P25Q32H Individual Block Protection (WPS=1)
Block
Sector/Block
Sector 15 (4KB)
Sector 14 (4KB)
-
Block 63
Sector 1 (4KB)
Sector 0 (4KB)
Block 62
Block 62 (64KB)
Individual Block
Locks:
32 Sectors(Top/Bottom)
62 Blocks
Individual Block Lock:
36h+Address
Block 2~61
-------
Individual Block Unlock:
39h+Address
Read Block Lock:
3Ch+Address
Block 1
Block 1 (64KB)
Global Block Lock:
7Eh
Sector 15 (4KB)
Global Block Unlock:
98h
Sector 14 (4KB)
Block 0
Sector 1 (4KB)
Sector 0 (4KB)
Notes:
1. Individual Block/Sector protection is only valid when WPS=1.
2. All individual block/sector lock bits are set to 1 by default after power up, all memory array is protected.
Puya Semiconductor
Page 17 of 93
P25Q32H Datasheet
7
Memory Address Mapping
The memory array can be erased in three levels of granularity including a full chip erase. The size of the
erase blocks is optimized for both code and data storage applications, allowing both code and data segments
to reside in their own erase regions.
Each device has
Each block has
Each sector has
Each page has
4M
64/32K
4K
256
bytes
16K
256/128
16
-
pages
1024
16/8
-
-
sectors
64/128
-
-
-
blocks
P25Q32H Memory Organization
Block
63
62
„„
„„
2
1
0
Puya Semiconductor
Sector
Address range
1023
3FF000H
3FFFFFH
„„
„„
„„
1008
3F0000H
3F0FFFH
1007
3EF000H
3EFFFFH
„„
„„
„„
992
3E0000H
3E0FFFH
„„
„„
„„
„„
„„
„„
„„
„„
„„
„„
„„
„„
„„
„„
„„
„„
„„
„„
47
02F000H
02FFFFH
„„
„„
„„
32
020000H
020FFFH
31
01F000H
01FFFFH
„„
„„
„„
16
010000H
010FFFH
15
00F000H
00FFFFH
„„
„„
„„
0
000000H
000FFFH
Page 18 of 93
P25Q32H Datasheet
8 Device Operation
Before a command is issued, status register should be checked to ensure device is ready for the intended
operation.
When incorrect command is inputted to this LSI, this LSI becomes standby mode and keeps the standby
mode until next CS# falling edge. In standby mode, SO pin of this LSI should be High-Z. When correct
command is inputted to this LSI, this LSI becomes active mode and keeps the active mode until next CS#
rising edge.
Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK.
The difference of serial peripheral interface mode 0 and mode 3 is shown as Figure 8-1.
For the following instructions: RDID, RDSR, RDSR1, RDSCUR, READ, FAST_READ, DREAD, 2READ,
4READ, QREAD, RDSFDP, RES, REMS, DREMS, QREMS, the shifted-in instruction sequence is followed
by a data-out sequence. After any bit of data being shifted out, the CS# can be high. For the following
instructions: WREN, WRDI, WRSR, PE, SE, BE32K, BE, CE, PP, DPP, QPP, DP, ERSCUR, PRSCUR,
SUSPEND, RESUME, RSTEN, RST, the CS# must go high exactly at the byte boundary; otherwise, the
instruction will be rejected and not executed.
During the progress of Write Status Register, Program, Erase operation, to access the memory array is
neglected and not affect the current operation of Write Status Register, Program, Erase.
Figure 8-1 Serial Peripheral Interface Modes Supported
CPOL CPHA
shift in
(Serial mode 0)
0
0
SCLK
(Serial mode 3)
1
1
SCLK
SI
SO
shift out
MSB
MSB
Note:
CPOL indicates clock polarity of serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not transmitting. CPHA
indicates clock phase. The combination of CPOL bit and CPHA bit decides which serial mode is supported.
Standard SPI
The P25Q32H features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#),
Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is
latched on the rising edge of SCLK and data shifts out on the falling edge of SCLK.
Dual SPI
The P25Q32H supports Dual SPI operation when using the “Dual Output Fast Read” and “Dual I/O Fast
Read”(3BHand BBH) commands. These commands allow data to be transferred to or from the device at two
Puya Semiconductor
Page 19 of 93
P25Q32H Datasheet
times the rate of the standard SPI. When using the Dual SPI command the SI and SO pins become
bidirectional I/O pins: IO0 and IO1.
Quad SPI
The P25Q32H supports Quad SPI operation when using the “Quad Output Fast Read”,” Quad I/O Fast
Read”(6BH,EBH) commands. These commands allow data to be transferred to or from the device at four
times the rate of the standard SPI. When using the Quad SPI command the SI and SO pins become
bidirectional I/O pins: IO0 and IO1, and WP# and HOLD# pins become IO2 andIO3. Quad SPI commands
require the non-volatile Quad Enable bit(QE) in Status Register to be set.
QPI
The P25Q32H supports Quad Peripheral Interface (QPI) operations only when the device is switched from
Standard/Dual/Quad SPI mode to QPI mode using the “Enable the QPI (38H)”command. The QPI mode
utilizes all four IO pins to input the command code. Standard/Dual/Quad SPI mode and QPI mode are
exclusive. Only one mode can be active at any given times. “Enable the QPI(38H)”and “Disable the
QPI(FFH)”commands are used to switch between these two modes. Upon power-up and after software reset
using “”Reset (99H)”command, the default state of the device is Standard/Dual/Quad SPI mode. The QPI
mode requires the non-volatile Quad Enable bit (QE) in Status Register to be set.
Software Reset & Hardware RESET# pin
The P25Q32H can be reset to the initial power-on state by a software Reset sequence, either in SPI mode or
QPI mode. This sequence must include two consecutive commands: Enable Reset (66h) & Reset (99h). If the
command sequence is successfully accepted, the device will take approximately 30uS (tReady) to reset. No
command will be accepted during the reset period.
The P25Q32H can also be configured to utilize a hardware RESET# pin. The HOLD/RST bit in the Configure
Register is the configuration bit for HOLD# pin function or RESET# pin function. When HOLD/RST=0 (factory
default), the pin acts as a HOLD# pin as described above; when HOLD/RST=1, the pin acts as a RESET# pin.
Drive the RESET# pin low for a minimum period of ~1us (tRESET*) will reset the device to its initial power-on
state. Any on-going Program/Erase operation will be interrupted and data corruption may happen. While
RESET# is low, the device will not accept any command input.
If QE bit is set to 1, the HOLD or RESET function will be disabled, the pin will become one of the four data I/O
pins.
Hardware RESET# pin has the highest priority among all the input signals. Drive RESET# low for a minimum
period of ~1us (tRESET*) will interrupt any on-going external/internal operations, regardless the status of
other SPI signals (/CS, CLK, IOs, WP# and/or HOLD#).
Note:
1. While a faster RESET# pulse (as short as a few hundred nanoseconds) will often reset the device, a 1us
minimum is recommended to ensure reliable operation.
2. There is an internal pull-up resistor for the dedicated RESET# pin. If the reset function is not needed, this
pin can be left floating in the system.
Puya Semiconductor
Page 20 of 93
P25Q32H Datasheet
9 Hold Feature
HOLD# pin signal goes low to hold any serial communications with the device. The HOLD feature will not stop
the operation of write status register, programming, or erasing in progress.
The operation of HOLD requires Chip Select(CS#) keeping low and starts on falling edge of
HOLD# pin signal while Serial Clock (SCLK) signal is being low (if Serial Clock signal is not being low,
HOLD operation will not start until Serial Clock signal being low). The HOLD condition ends on the rising
edge of HOLD# pin signal while Serial Clock(SCLK) signal is being low( if Serial Clock signal is not being low,
HOLD operation will not end until Serial Clock being low).
Figure 9-1 Hold Condition Operation
CS#
SCLK
HOLD#
HOLD
HOLD
During the HOLD operation, the Serial Data Output (SO) is high impedance when Hold# pin goes low and will
keep high impedance until Hold# pin goes high. The Serial Data Input (SI) is don't care if both Serial Clock
(SCLK) and Hold# pin goes low and will keep the state until SCLK goes low and Hold# pin goes high. If Chip
Select (CS#) drives high during HOLD operation, it will reset the internal logic of the device. To re-start
communication with chip, the HOLD# must be at high and CS# must be at low.
Note: The HOLD feature is disabled during Quad I/O mode.
Puya Semiconductor
Page 21 of 93
P25Q32H Datasheet
10 Commands
10.1 Commands listing
Figure 10-1 Command set(Standard/Dual/Quad SPI)
Abbr.
Code
ADR
Bytes
DMY
Bytes
Data
Bytes
Read Array (fast)
FREAD
0Bh
3
1
1+
n bytes read out until CS# goes high
Read Array (low power)
READ
03h
3
0
1+
n bytes read out until CS# goes high
Read Dual Output
DREAD
3Bh
3
1
1+
n bytes read out by Dual output
Read 2x I/O
2READ
BBh
3
1
1+
n bytes read out by 2 x I/O
Read Quad Output
QREAD
6Bh
3
1
1+
n bytes read out by Quad output
Read 4x I/O
4READ
EBh
3
1
1+
n bytes read out by 4 x I/O
Read Word 4x I/O
WREAD
E7h
3
1
1+
n bytes word read out by 4 x I/O
Read Octal Word 4x I/O
OREAD
E3h
3
1
1+
n bytes octal word read out by 4 x I/O
Page Erase
PE
81h
3
0
0
erase selected page
Sector Erase (4K bytes)
SE
20h
3
0
0
erase selected sector
Block Erase (32K bytes)
BE32
52h
3
0
0
erase selected 32K block
Block Erase (64K bytes)
BE64
D8h
3
0
0
erase selected 64K block
Chip Erase
CE
60h/C7h
0
0
0
erase whole chip
Page Program
PP
02h
3
0
1+
program selected page
Dual-IN Page Program
2PP
A2h
3
0
1+
program selected page by Dual input
Quad page program
QPP
32h
3
0
1+
quad input to program selected page
Program/Erase Suspend
PES
75h/B0h
0
0
0
suspend program/erase operation
Program/Erase Resume
PER
7Ah/30h
0
0
0
continue program/erase operation
WREN
06h
0
0
0
sets the write enable latch bit
Commands
Function description
Read
Program and Erase
Protection
Write Enable
Write Disable
WRDI
04h
0
0
0
resets the write enable latch bit
VWREN
50h
0
0
0
Write enable for volatile SR
SBLK
36h
3
0
0
Individual block lock
Individual Block Unlock
SBULK
39h
3
0
0
Individual block unlock
Read Block Lock Status
RDBLOCK
3Ch/3Dh
3
0
0
Read individual block lock register
GBLK
7Eh
0
0
0
Whole chip block protect
GBULK
98h
0
0
0
Whole chip block unprotect
Erase Security Registers
ERSCUR
44h
3
0
0
Erase security registers
Program Security Registers
PRSCUR
42h
3
0
1+
Program security registers
Read Security Registers
RDSCUR
48h
3
1
1+
Read value of security register
Volatile SR Write Enable
Individual Block Lock
Global Block Lock
Global Block Unlock
Security
Puya Semiconductor
Page 22 of 93
P25Q32H Datasheet
Command set(Standard/Dual/Quad SPI)
Cont’d
Abbr.
Code
ADR
Bytes
DMY
Bytes
Data
Bytes
Read Status Register
RDSR
05h
0
0
1
read out status register
Read Status Register-1
RDSR1
35h
0
0
1
Read out status register-1
Read Configure Register
RDCR
15h
0
0
1
Read out configure register
Active Status Interrupt
ASI
25h
0
1
0
Enable the active status interrupt
Write Status Register
WRSR
01h
0
0
1
Write data to status registers
Write Status Register-1
WRSR1
31h
0
0
1
Write data to status registers-1
Write Configure Register
WRCR
11h
0
0
1
Write data to configuration register
RSTEN
66h
0
0
0
Enable reset
RST
99h
0
0
0
Reset
Enable QPI
QPIEN
38h
0
0
0
Enable QPI mode
Read Manufacturer/device ID
RDID
9Fh
0
0
1 to 3
Read Manufacture ID
REMS
90h
3
Dual Read Manufacture ID
DREMS
92h
3
1
1+
Quad Read Manufacture ID
QREMS
94h
3
1
1+
DP
B9h
0
0
0
enters deep power-down mode
RDP/RES
ABh
3
0
1
Read electronic ID data
SBL
77h
0
0
0
Set burst length
RDSFDP
5Ah
Read SFDP parameter
FFh
Release from read enhanced
Commands
Function
Status Register
Other Commands
Reset Enable
Reset
Deep Power-down
Release Deep
Power-down/Read Electronic
ID
Set burst length
Read SFDP
Release read enhanced
Read unique ID
Puya Semiconductor
RUID
4Bh
1+
4
1+
output JEDEC ID: 1-byte manufacturer
ID & 2-byte device ID
Read manufacturer ID/device ID data
Dual output read manufacture/device
ID
Quad output read manufacture/device
ID
Read unique ID
Page 23 of 93
P25Q32H Datasheet
Command set(QPI)
Code
ADR
Bytes
DMY
Bytes
Data
Bytes
Write Enable
06h
0
0
0
sets the write enable latch bit
Volatile SR Write Enable
50h
0
0
0
Write enable for volatile status
register
Write Disable
04h
0
0
0
resets the write enable latch bit
Individual Block Lock
36h
3
0
0
Individual block lock
Individual Block Unlock
39h
3
0
0
Individual block unlock
Read Block Lock Status
3Ch/3Dh
3
0
0
Read individual block lock register
Global Block Lock
7Eh
0
0
0
Whole chip block protect
Global Block Unlock
98h
0
0
0
Whole chip block unprotect
Read Status Register
05h
0
0
1
read out status register
Read Status Register-1
35h
0
0
1
Read out status register-1
Read Configure Register
15h
0
0
1
Read out configure register
Write Status Register
01h
0
0
1
Write data to status registers
Write Status Register-1
31h
0
0
1
Write data to status registers
Write Configure Register
11h
0
0
1
Write data to configuration register
Page Program
02h
3
0
1+
program selected page
Page Erase
81h
3
0
0
erase selected page
Sector Erase (4K bytes)
20h
3
0
0
erase selected sector
Block Erase (32K bytes)
52h
3
0
0
erase selected 32K block
Block Erase (64K bytes)
D8h
3
0
0
erase selected 64K block
Chip Erase
60h/C7h
0
0
0
erase whole chip
Program/Erase Suspend
75h/B0h
0
0
0
suspend program/erase operation
Program/Erase Resume
7Ah/30h
0
0
0
continue program/erase operation
Deep Power-down
B9h
0
0
0
enters deep power-down mode
Release Deep
Power-down/Read Electronic ID
ABh
3
0
1
Read electronic ID data
Set Read Parameters
C0h
0
0
1
Set read dummy and wrap
Fast read
0Bh
3
1
1+
n bytes read out until CS# goes high
Burst Read with Wrap
0Ch
3
1
1+
n bytes burst read with wrap by 4 x
I/O
Read Word 4x I/O
EBh
3
1
1+
n bytes read out by 4 x I/O
Read Manufacture ID
90h
3
1+
Read manufacturer ID/device ID data
Read Manufacturer/device ID
9Fh
0
Read SFDP
5Ah
Commands
Abbr.
0
1 to 3
Function description
output JEDEC ID: 1-byte
manufacturer ID & 2-byte device ID
Read SFDP parameter
Disable QPI
FFh
Reset Enable
66h
0
0
0
Release from read enhanced
Enable reset
Reset
99h
0
0
0
Reset
NOTE:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
Puya Semiconductor
Page 24 of 93
P25Q32H Datasheet
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3,…..)
4. Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0,…)
IO1 = (x, x, x, x, D5, D1,…)
IO2 = (x, x, x, x, D6, D2,…)
IO3 = (x, x, x, x, D7, D3,…)
6. Fast Word Read Quad I/O Data
IO0 = (x, x, D4, D0,…)
IO1 = (x, x, D5, D1,…)
IO2 = (x, x, D6, D2,…)
IO3 = (x, x, D7, D3,…)
7. Fast Word Read Quad I/O Data: the lowest address bit must be 0.
8. For Octal Word Read Quad I/O, the lowest four address bits must be 0.
9. QPI Command, Address, Data input/output format:
CLK #0 1 2 3 4 5 6 7 8 9 10 11
IO0= C4, C0, A20, A16, A12, A8, A4, A0, D4, D0, D4, D0,
IO1= C5, C1, A21, A17, A13, A9, A5, A1, D5, D1, D5, D1
IO2= C6, C2, A22, A18, A14, A10, A6, A2, D6, D2, D6, D2
IO3= C7, C3, A23, A19, A15, A11, A7, A3, D7, D3, D7, D3
6. Security Registers Address:
Security Register1: A23-A16=00H, A15-A9=000100, A9-A0= Byte Address;
Security Register2: A23-A16=00H, A15-A9=001000, A9-A0= Byte Address;
Security Register3: A23-A16=00H, A15-A9=001100, A9-A0= Byte Address;
Puya Semiconductor
Page 25 of 93
P25Q32H Datasheet
10.2 Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like
PP,DPP,QPP, PE,SE, BE32K,BE, CE, and WRSR,ERSCUR, PRSCUR which are intended to change the
device content, should be set every time after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→ sending WREN instruction code→ CS# goes
high.
Figure 10-2 Write Enable (WREN) Sequence (Command 06)
CS#
SCLK
0
1
SI
SO
2
3
4
5
6
7
Command
06H
High-Z
Figure 10-2a Write Enable (WREN) Sequence (QPI)
CS#
0
1
SCLK
Command
06H
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Puya Semiconductor
Page 26 of 93
P25Q32H Datasheet
10.3 Write Disable (WRDI)
The Write Disable (WRDI) instruction is for resetting Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→ sending WRDI instruction code→ CS# goes
high.
The WEL bit is reset by following situations:
- Power-up
- Write Disable (WRDI) instruction completion
- Write Status Register (WRSR) instruction completion
- Page Program (PP) instruction completion
- Dual Input Page Program (DPP) instruction completion
- Quod Page Program (QPP) instruction completion
- Page Erase (PE) instruction completion
- Sector Erase (SE) instruction completion
- Block Erase (BE32K,BE) instruction completion
- Chip Erase (CE) instruction completion
- Erase Security Register (ERSCUR) instruction completion
- Program Security Register (PRSCUR) instruction completion
- Reset (RST) instruction completion
Figure 10-3 Write Disable (WRDI) Sequence (Command 04)
CS#
SCLK
0
1
SI
SO
2
3
4
5
6
7
Command
04H
High-Z
Figure 10-3a Write Disable (WRDI) Sequence (QPI)
CS#
0
1
SCLK
Command
04H
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Puya Semiconductor
Page 27 of 93
P25Q32H Datasheet
10.4 Write Enable for Volatile Status Register
The non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to
change the system configuration and memory protection schemes quickly without waiting for the typical
non-volatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. The Write
Enable for Volatile Status Register command must be issued prior to a Write Status Register command. The
Write Enable for Volatile Status Register command will not set the Write Enable Latch bit, it is only valid for
the Write Status Register command to change the volatile Status Register bit values.
The sequence of issuing Write Enable for Volatile Status Register instruction is: CS# goes low→ sending
Write Enable for Volatile Status Register instruction code→ CS# goes high.
Figure 10-4 Write Enable for Volatile Status Register Sequence (Command 50)
CS#
0
1
2
3
4
5
6
7
SCLK
Command(50H )
SI
SO
High-Z
Figure 10-4a Write Enable for Volatile Status Register Sequence (QPI)
CS#
0
1
SCLK
Command
50H
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
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P25Q32H Datasheet
10.5 Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time
(even in program/erase/write status register condition). It is recommended to check the Write in Progress
(WIP) bit before sending a new instruction when a program, erase, or write status register operation is in
progress. For command code “05H”, the SO will output Status Register bits S7~S0. The command code
“35H”, the SO will output Status Register bits S15~S8.
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status
Register data out on SO.
The SIO[3:1] are "don't care".
Figure 10-5 Read Status Register (RDSR) Sequence (Command 05 or 35)
CS#
0
1 2
3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Command
SI
05Hor35H
SO
High-Z
S7~S0 or S15~S8 out
7 6 5
MSB
4
S7~S0 or S15~S8 out
3 2 1 0 7 6
MSB
5 4 3 2
1 0 7
Figure 10-5a Read Status Register (RDSR) Sequence (QPI)
CS#
0
1
2
3
4
5
SCLK
Command
05H or 35H
SI(IO0)
4
0
4
0
4
SO(IO1)
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
S7-S0 or S15-S8 out
Status Register
S15
SUS1
S14
CMP
S13
LB3
S12
LB2
S11
LB1
S10
SUS2
S9
QE
S8
SRP1
S7
SRP0
S6
BP4
S5
BP3
S4
BP2
S3
BP1
S2
BP0
S1
WEL
S0
WIP
The definition of the status register bits is as below:
WIP bit.
The Write in Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register
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P25Q32H Datasheet
progress. When WIP bit sets to 1, means the device is busy in program/erase/write status register progress,
when WIP bit sets 0, means the device is not in program/erase/write status register progress.
WEL bit.
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the
internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status
Register, Program or Erase command is accepted.
BP4, BP3, BP2, BP1, BP0 bits.
The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits are non-volatile. They define the size of the area to be
software protected against Program and Erase commands. These bits are written with the Write Status
Register (WRSR) command. When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant
memory area (as defined in Table “Protected Area Sizes”).becomes protected against Page Program (PP),
Page Erase (PE), Sector Erase (SE) and Block Erase (BE) commands. The Block Protect (BP4, BP3, BP2,
BP1, and BP0) bits can be written provided that the Hardware Protected mode has not been set. The Chip
Erase (CE) command is executed, only if the Block Protect (BP4, BP3, BP2, BP1and BP0) are set to “None
protected”.
SRP1, SRP0 bits.
The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The
SRP bits control the method of write protection: software protection, hardware protection, power supply
lock-down or one time programmable protection
SRP1
SRP0
WP#
Status Register
0
0
x
Software Protected
0
1
0
0
1
1
1
0
x
1
1
x
Hardware Protected
Hardware Unprotected
Description
The Status Register can be written to after a Write
Enable command, WEL=1.(Default)
WP#=0, the Status Register locked and can not be
written to.
WP#=1, the Status Register is unlocked and can be
written to after a Write Enable command, WEL=1.
Power Supply
Status Register is protected and can not be written to
Lock-Down(1)
again until the next Power-Down, Power-Up cycle.
One Time Program(2)
Status Register is permanently protected and can not be
written to.
NOTE:
1. When SRP1, SRP0=(1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state.
2. This feature is available on special order. Please contact PUYA for details.
QE bit.
The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation.
When the QE bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1, the
Quad IO2 and IO3 pins are enabled. (The QE bit should never be set to 1 during standard SPI or Dual SPI
operation if the WP# or HOLD# pins are tied directly to the power supply or ground)
LB3, LB2, LB1, bits.
The LB3, LB2, LB1, bits are non-volatile One Time Program (OTP) bits in Status Register (S13-S11) that
provide the write protect control and status to the Security Registers. The default state of LB3-LB1are0, the
security registers are unlocked. The LB3-LB1bitscan be set to 1 individually using the Write Register instruction.
The LB3-LB1bits are One Time Programmable, once its set to 1, the Security Registers will become read-only
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P25Q32H Datasheet
permanently.
CMP bit
The CMP bit is a non-volatile Read/Write bit in the Status Register(S14). It is used in conjunction the BP4-BP0
bits to provide more flexibility for the array protection. Please see the table “Protected Area Size” for details.
The default setting is CMP=0.
SUS1, SUS2bit
The SUS1 and SUS2bit are read only bit in the status register (S15and S10) that are set to 1 after executing an
Program/Erase Suspend (75H or B0H) command (The Erase Suspend will set the SUS1 to 1,and the Program
Suspend will set the SUS2 to 1). The SUS1 and SUS2 bit are cleared to 0 by Program/Erase Resume (7AH or
30H) command as well as a power-down, power-up cycle.
10.6 Read Configure Register (RDCR)
The RDCR instruction is for reading Configure Register Bits. The Read Configure Register can be read at
any time (even in program/erase/write status register condition). It is recommended to check the Write in
Progress (WIP) bit before sending a new instruction when a program, erase, or write status register
operation is in progress.
The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configure
Register data out on SO.
The SIO[3:1] are "don't care".
Figure 10-6 Read Status Register (RDCR) Sequence (Command 15)
CS#
0
1 2
3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Command
SI
15H
High-Z
SO
Configure Register Out
7 6 5
MSB
4
Configure Register Out
3 2 1 0 7 6
MSB
5 4 3 2
1 0 7
Figure 10-6a Read Status Register (RDCR) Sequence (QPI)
CS#
0
1
2
3
4
5
SCLK
Command
15H
SI(IO0)
4
0
4
0
4
SO(IO1)
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
C7-C0 out
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P25Q32H Datasheet
Configure Register
Bit7
HOLD/RST
Bit6
DRV1
Bit5
DRV0
Bit4
QP
Bit3
Reserved
Bit2
WPS
Bit1
Reserved
Bit0
Reserved
HOLD/RST bit.
The HOLD/RST bit is used to determine whether /HOLD or /RESET function should be implemented on the
hardware pin for 8-pin packages. When HOLD/RST=0 (factory default), the pin acts as /HOLD; when
HOLD/RST=1, the pin acts as /RESET. However, /HOLD or /RESET functions are only available when QE=0. If
QE is set to 1, the /HOLD and /RESET functions are disabled, the pin acts as a dedicated data I/O pin.
DRV1 & DRV0 bit.
The DRV1 & DRV0 bits are used to determine the output driver strength for the Read operations.
DRV1,DRV0
Drive Strength
0,0
50%
0,1
150%
1,0 (default)
100%
1,1
75%
QP bit.
The Quad Page (QP) bit is a non-volatile Read/Write bit in the Configure Register that allows Quad Page
operation. When the QP bit is set to 0 (Default) the page size is 256bytes. When the QP pin is set to 1, the
page size is 1024bytes.
This bit controls the page programming buffer address wrap point. Legacy SPI devices generally have used a
256 Byte page programming buffer and defined that if data is loaded into the buffer beyond the 255 Byte
locations, the address at which additional bytes are loaded would be wrapped to address zero of the buffer.
The P25Q32H provides a 1024 Byte page programming buffer that can increase programming performance.
For legacy software compatibility, this configuration bit provides the option to continue the wrapping behavior at
the 256 Byte boundary or to enable full use of the available 1024 Byte buffer by not wrapping the load address
at the 256 Byte boundary.
When the QP pin is set to 1, the page erase instruction (81h) will erase the data of the chosen Quad Page to be
"1".
WPS bit.
The WPS bit is used to select which Write Protect scheme should be used. When WPS=0, the device will use
the combination of CMP, BP[4:0] bits to protect a specific area of the memory array. When WPS=1, the device
will utilize the Individual Block Locks to protect any individual sector or blocks. The default value for all
Individual Block Lock bits is 1 upon device power on or after reset.
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P25Q32H Datasheet
10.7 Active Status Interrupt (ASI)
To simplify the readout of the WIP bit, the Active Status Interrupt command (25h) may be used. It is then not
necessary to continuously read the status register, it is sufficient to monitor the value of the SO line. If the SO
line is connected to an interrupt line on the host controller, the host controller may be in sleep mode until the
SO line indicates that the device is ready for the next command.
The WIP bit can be read at any time, including during an internally self-timed program or erase operation.
To enable the Active Status Interrupt command, the CS pin must first be asserted and the opcode of 25h
must be clocked into the device. For SPI Mode3, at least one dummy bit has to be clocked into the device
after the last bit of the opcode has been clocked in. (In most cases, this is most easily done by sending a
dummy byte to the device.) The value of the SI line after the opcode is clocked in is of no significance to the
operation. For SPI Mode 0, this dummy bit (dummy byte) is not required.
The value of WIP is then output on the SO line, and is continuously updated by the device for as long as the
CS pin remains asserted. Additional clocks on the SCK pin are not required. If the WIP bit changes from 1 to
0 while the CS pin is asserted, the SO line will change from 1 to 0. (The WIP bit cannot change from 0 to 1
during an operation, so if the SO line already is 0, it will not change.)
Deasserting the CS pin will terminate the Active Status Interrupt operation and put the SO pin into a
high-impedance state. The CS pin can be deasserted at any time and does not require that a full byte of data
be read.
The sequence of issuing ASI instruction is: CS# goes low→ sending ASI instruction code→ WIP data out on
SO
Figure 10-7 Active Status Interrupt (ASI) Sequence (Command 25)
CS#
0
1 2
3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SCLK
Command
SI
SO
25H
High - Z
RDY/BSY
High - Z
10.8 Write Status Register (WRSR)
The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it
can be accepted, a Write Enable (WREN) command must previously have been executed. After the Write
Enable (WREN) command has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) command has no effect on S15, S10, S1 and S0 of the Status Register.
CS# must be driven high after the eighth or sixteen bit of the data byte has been latched in. If not, the Write
Status Register (WRSR) command is not executed. If CS# is driven high after eighth bit of the data byte, the
CMP and QE and SRP1 bits will be cleared to 0. As soon as CS# is driven high, the self-timed Write Status
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P25Q32H Datasheet
Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the
Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress
(WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is
completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4,
BP3, BP2, BP1, and BP0) bits, to define the size of the area that is to be treated as read-only, as defined in
Table1. The Write Status Register (WRSR) command also allows the user to set or reset the Status Register
Protect (SRP1 and SRP0) bits in accordance with the Write Protect (WP#) signal. The Status Register Protect
(SRP1 and SRP0) bits and Write Protect (WP#) signal allow the device to be put in the Hardware Protected
Mode. The Write Status Register (WRSR) command is not executed once the Hardware Protected Mode is
entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status
Register data on SI→CS# goes high.
The CS# must go high exactly at the 8 bits data boundary; otherwise, the instruction will be rejected and not
executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes
high. The Write in Progress (WIP) bit still can be checked during the Write Status Register cycle is in progress.
The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write
Enable Latch (WEL) bit is reset.
Figure 10-8 Write Status Register (WRSR) Sequence (Command 01 or 31)
CS#
0
1
2
3
4
5
6
7
8
9
10
11 12 13 14 15
SCLK
Command
Status Register0/1 in
01 H or 31H
SI
7
6
5
MSB
4
3
2
1
0
High-Z
SO
Figure 10-8a Write Status Register (WRSR) Sequence (QPI)
CS#
0
1
2
3
SCLK
Command
01H or 31H
SI(IO0)
4
0
SO(IO1)
5
1
WP#(IO2)
6
2
HOLD#(IO3)
7
3
Status Register0/1
Puya Semiconductor
Page 34 of 93
P25Q32H Datasheet
10.9 Write Configure Register (WRCR)
The Write Configure Register (WRCR) command allows new values to be written to the Configure Register.
Before it can be accepted, a Write Enable (WREN) command must previously have been executed. After the
Write Enable (WREN) command has been decoded and executed, the device sets the Write Enable Latch
(WEL).
The sequence of issuing WRCR instruction is: CS# goes low→ sending WRCR instruction code→ Configure
Register data on SI→CS# goes high.
The CS# must go high exactly at the 8 bits data boundary; otherwise, the instruction will be rejected and not
executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes
high. The Write in Progress (WIP) bit still can be checked during the Write Status Register cycle is in progress.
The WIP sets 1 during the tW timing, and sets 0 when Write Configure Register Cycle is completed, and the
Write Enable Latch (WEL) bit is reset.
Figure 10-9 Write Configure Register (WRCR) Sequence (Command 11)
CS#
0
1
2
3
4
5
6
7
8
9
10
11 12 13 14 15
SCLK
Command
SI
Configure Register in
11H
7
6
MSB
5
4
3
2
1
0
High - Z
SO
Figure 10-9a Write Configure Register (WRCR) Sequence (QPI)
CS#
0
1
2
3
SCLK
Command
11H
SI(IO0)
4
0
SO(IO1)
5
1
WP#(IO2)
6
2
HOLD#(IO3)
7
3
Configure Register in
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Page 35 of 93
P25Q32H Datasheet
10.10 Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts
out on the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location.
The address is automatically increased to the next higher address after each byte data is shifted out, so the
whole memory can be read out at a single READ instruction. The address counter rolls over to 0 when the
highest address has been reached.
The sequence of issuing READ instruction is: CS# goes low→ sending READ instruction code→ 3-byte
address on SI→ data out on SO→ to end READ operation can use CS# to high at any time during data out.
Figure 10-10 Read Data Bytes (READ) Sequence (Command 03)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
SI
SO
03H
High - Z
24 - bit address
23
22 21
3
2
1
0
Data Out1
MSB
MSB
Puya Semiconductor
7
6
5
4
3
2
Data Out2
1
0
Page 36 of 93
P25Q32H Datasheet
10.11 Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK,
and data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte
can be at any location. The address is automatically increased to the next higher address after each byte
data is shifted out, so the whole memory can be read out at a single FAST_READ instruction. The address
counter rolls over to 0 when the highest address has been reached.
The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ
instruction code→3-byte address on SI→ 1-dummy byte address on SI→data out on SO→ to end
FAST_READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without
any impact on the Program/Erase/Write Status Register current cycle.
Figure 10-11 Read at Higher Speed (FAST_READ) Sequence (Command 0B)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
24-bit address
0BH
23 22 21
3
2
1
0
High - Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
DummyByte
SI
7
6
5
4
3
2
1
0
Data Out1
SO
Puya Semiconductor
7 6
MSB
5
4
3
Data Out2
2
1
0
7 6
MSB
5
Page 37 of 93
P25Q32H Datasheet
10.12 Read Data Bytes at Higher Speed in QPI mode
The Fast Read command is also supported in QPI mode. In QPI mode, the number of dummy clocks is
configured by the “Set Read Parameters (C0H)” command to accommodate a wide range application with
different needs for either maximum Fast Read frequency or minimum data access latency. Depending on the
Read Parameter Bits P[5:4] setting, the number of dummy clocks can be configured as either 4/6/8.
Figure 10-12 Read at Higher Speed Sequence (QPI)
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12 13
SCLK
IO switch from
input to output
Command
0BH A23-16
A15-8
A7-0
Dummy*
SI(IO0)
20
16
12
8
4
0
4
0
4
0
4
0
4
SO(IO1)
21
17
13
9
5
1
5
1
5
1
5
1
5
WP#(IO2)
22
18
14
10
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
23
19
15
11
7
3
7
3
7
3
7
3
7
Byte1
Byte2
*“Set Read Parameters” command (C0H)
can set the number of dummy clocks
Puya Semiconductor
Page 38 of 93
P25Q32H Datasheet
10.13 Dual Read Mode (DREAD)
The DREAD instruction enable double throughput of Serial NOR Flash in read mode. The address is latched
on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of
SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically
increased to the next higher address after each byte data is shifted out, so the whole memory can be read out
at a single DREAD instruction. The address counter rolls over to 0 when the highest address has been reached.
Once writing DREAD instruction, the following data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing DREAD instruction is: CS# goes low → sending DREAD instruction → 3-byte
address on SI → 8-bit dummy cycle → data out interleave on SIO1 & SIO0 → to end DREAD operation can
use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 10-13 Dual Read Mode Sequence (Command 3B)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24- bit address
3BH
23 22 21
3
2
1
0
High - Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Clocks
SI
SO
Puya Semiconductor
6
0
6
Data Out1
Data Out2
7 5 3 1 7 5 3 1
MSB
MSB
4
2
0
6
4
2
7
Page 39 of 93
P25Q32H Datasheet
10.14 2 X IO Read Mode (2READ)
The 2READ instruction enables Double Transfer Rate of Serial NOR Flash in read mode. The address is
latched on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge
of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is
automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single 2READ instruction. The address counter rolls over to 0 when the highest address has
been reached.
Once writing 2READ instruction, the following address/dummy/data out will perform as 2-bit instead of previous
1-bit.
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 24-bit address
interleave on SIO1 & SIO0→ 8-bit dummy cycle on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to
end 2READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 10-14 2 X IO Read Mode Sequence (Command BB M5-4 ≠ (1,0))
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Command
SI(IO0)
BBH
SO(IO1)
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
A23-16
A15-8
A7-0
M7-0
CS#
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
SCLK
SI(IO0)
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
SO(IO1)
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
Byte1
Puya Semiconductor
Byte2
Byte3
Byte4
Page 40 of 93
P25Q32H Datasheet
10.15 2 X IO Read Performer Enhance Mode
“BBh” command supports 2 X IO Performance Enhance Mode which can further reduce command overhead
through setting the “Continuous Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the
“Continuous Read Mode” bits (M5-4) = (1, 0), then the next 2 X IO Read command (after CS# is raised and
then lowered) does not require the BBH command code.
If the “Continuous Read Mode” bits (M5-4) do not equal (1, 0), the next command requires the first BBH
command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used
to reset (M5-4) before issuing normal command.
Figure 10-15 2 X IO Read Performance Enhance Mode ( M5-4 = (1,0) )
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Command
SI(IO0)
BBH
6
SO(IO1)
7
4
2
0
6
5
3
1
7
A23-16
4
2
0
6
5
3
1
7
A15-8
4
2
0
6
5
3
1
7
4
2
0
5
3
1
M7-0
A7-0
CS#
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
SCLK
SI(IO0)
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
SO(IO1)
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
Byte1
Byte2
Byte3
Byte4
CS#
0
1
2
3
4
5
6
7
8
SI(IO0)
6
4
2
0
6
4
2
0
6
SO(IO1)
7
5
3
1
7
5
3
1
7
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
A23-16
A15-8
4
2
0
6
5
3
1
7
A7-0
4
2
0
6
4
2
0
6
4
2
0
6
5
3
1
7
5
3
1
7
5
3
1
7
M7-0
Byte1
Byte2
Note: 2 X IO Read Performance Enhance Mode, if M5-4 = 1, 0. If not using performance enhance
recommend to set M5-4 ≠ 1, 0.
Puya Semiconductor
Page 41 of 93
P25Q32H Datasheet
10.16 Quad Read Mode (QREAD)
The QREAD instruction enable quad throughput of Serial NOR Flash in read mode. A Quad Enable (QE) bit of
status Register must be set to "1" before sending the QREAD instruction. The address is latched on rising edge
of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fQ. The first address byte can be at any location. The address is automatically increased
to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single
QREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once
writing QREAD instruction, the following data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 3-byte address
on SI → 8-bit dummy cycle → data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end QREAD operation
can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 10-16 Quad Read Mode Sequence (Command 6B)
CS#
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
SCLK
Command
SI(IO0)
24-Bit address
6BH
23
SO(IO1)
High-Z
WP#(IO2)
High-Z
HOLD#(IO3)
High-Z
22 21
3
2
1
0
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Clocks
SI(IO0)
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
7
3
7
3
7
3
7
3
7
HOLD#(IO3)
Byte1
Puya Semiconductor
Byte2
Byte3
Byte4
Page 42 of 93
P25Q32H Datasheet
10.17 4 X IO Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial NOR Flash in read mode. A Quad Enable (QE) bit of
status Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge
of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fQ. The first address byte can be at any location. The address is automatically increased
to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single
4READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once
writing 4READ instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing 4READ instruction is: CS# goes low→ sending 4READ instruction→ 24-bit address
interleave on SIO3, SIO2, SIO1 & SIO0→2+4 dummy cycles→data out interleave on SIO3, SIO2, SIO1 & SIO0
→ to end 4READ operation can use CS# to high at any time during data out.
Another sequence of issuing 4READ instruction especially useful in random access is: CS# goes low→sending
4READ instruction→3-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 → “Continuous Read Mode”
byte M[7:0]→ 4 dummy cycles →data out still CS# goes high → CS# goes low (reduce 4 Read instruction)
→24-bit random access address.
In the performance-enhancing mode, the “Continuous Read Mode” bits M[5:4] = (1,0) can make this mode
continue and reduce the next 4READ instruction. Once M[5:4 ] ≠ (1,0) and afterwards CS# is raised and then
lowered, the system then will escape from performance enhance mode and return to normal operation. A
“Continuous Read Mode” Reset command can be used to reset (M5-4) before issuing normal command
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 10-17 4 X IO Read Mode Sequence (Command EB M5-4 ≠ (1,0))
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
20 21 22 23
SCLK
Command
SI(IO0)
EBH
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
A23-16 A15-8 A7-0
M7-0
Dummy
Byte1 Byte2
Note:
1. Hi-impedance is inhibited for the two clock cycles.
2. M[5-4] = (1,0) is inhibited.
Puya Semiconductor
Page 43 of 93
P25Q32H Datasheet
10.18 4 X IO Read Performance Enhance Mode
“EBh” command supports 4 X IO Performance Enhance Mode which can further reduce command overhead
through setting the “Continuous Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the
“Continuous Read Mode” bits (M5-4) = (1, 0), then the next 4 X IO Read command (after CS# is raised and
then lowered) does not require the EBH command code.
If the “Continuous Read Mode” bits (M5-4) do not equal (1, 0), the next command requires the first EBH
command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used
to reset (M5-4) before issuing normal command.
Figure 10-18 4 x I/O Read Performance Enhance Mode Sequence ( M5-4 = (1,0) )
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
20 21 22 23
SCLK
Command
SI(IO0)
EBH
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
A23-16 A15-8 A7-0
M7-0
Dummy
Byte1
Byte2
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
A23-16 A15-8 A7-0
M7-0
Dummy
Byte1
Byte2
Note: 1. 4 X IO Read Performance Enhance Mode, if M5-4 = 1, 0. If not using performance enhance
recommend to set M5-4 ≠ 1, 0.
Puya Semiconductor
Page 44 of 93
P25Q32H Datasheet
10.19 Burst Read
The Set Burst with Wrap command is used in conjunction with “4 X IO Read” command to access a fixed length
of 8/16/32/64-byte section within a 256-byte page, in standard SPI mode.
The Set Burst with Wrap command sequence: CS# goes low → Send Set Burst with Wrap command → Send
24 dummy bits→ Send 8 bits “Wrap bits” → CS# goes high.
W6,W5
0,0
0,1
1,0
1,1
W4=0
Wrap Aroud
Yes
Yes
Yes
Yes
W4=1 (default)
Wrap Length
8-byte
16-byte
32-byte
64-byte
Wrap Aroud
No
No
No
No
Wrap Length
N/A
N/A
N/A
N/A
If the W6-W4 bits are set by the Set Burst with Wrap command, all the following “4 X IO Read” command will
use the W6-W4 setting to access the 8/16/32/64-byte section within any page. To exit the “Wrap Around”
function and return to normal read operation, another Set Burst with Wrap command should be issued to set
W4=1.
Figure 10-19 Burst Read (SBL) Sequence (Command 77)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Command
SI(IO0)
77H
X
X
X
X
X
X
4
X
SO(IO1)
X
X
X
X
X
X
5
X
WP#(IO2)
X
X
X
X
X
X
6
X
HOLD#(IO3)
X
X
X
X
X
X
X
X
W6-W4
Puya Semiconductor
Page 45 of 93
P25Q32H Datasheet
10.20 4 X IO Read in QPI mode
The 4 X I/O Fast Read command is also supported in QPI mode. In QPI mode, the number of dummy clocks is
configured by the “Set Read Parameters (C0H)” command to accommodate a wide range application with
different needs for either maximum Fast Read frequency or minimum data access latency. Depending on the
Read Parameter Bits P[5:4] setting, the number of dummy clocks can be configured as either 4/6/8. In QPI
mode, the “Continuous Read Mode” bits M7-M0 are also considered as dummy clocks. “Continuous Read
Mode” feature is also available in QPI mode for 4 X I/O Fast Read command. “Wrap Around” feature is not
available in QPI mode for 4 X I/O Fast Read command. To perform a read operation with fixed data length wrap
around in QPI mode, a dedicated “Burst Read with Wrap” (0CH) command must be used.
Figure 10-20 4 x I/O Read in QPI Mode Sequence ( M5-4 ≠ (1,0) )
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12 13
SCLK
IO switch from
input to output
Command
EBH
A15-8
A7-0
M7-0*
SI(IO0)
A23-16
20
16
12
8
4
0
4
0
4
0
4
0
4
SO(IO1)
21
17
13
9
5
1
5
1
5
1
5
1
5
WP#(IO2)
22
18
14
10
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
23
19
15
11
7
3
7
3
7
3
7
3
7
Byte1
Byte2
*“Set Read Parameters” command (C0H)
can set the number of dummy clocks
Puya Semiconductor
Page 46 of 93
P25Q32H Datasheet
10.21 4 X IO Word Read(E7h)
The 4 X I/O Word Read command is similar to the 4 X I/O Read command except that the lowest address bit
(A0) must equal 0 and only 2-dummy clock. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable
bit (QE) of Status Register (S9) must be set to enable for the 4 X I/O Word read command.
Figure 10-21 4 x I/O Word Read Sequence ( M5-4 ≠ (1,0) )
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
20 21
SCLK
Command
SI(IO0)
E7H
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
A23-16 A15-8 A7-0
P7-0 Dummy Byte1
Byte2
4 X I/O Word Read with “Continuous Read Mode”
The 4 X I/O Word Read command can further reduce command overhead through setting the “Continuous
Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4) =
(1, 0), then the next 4 X I/O Word Read command (after CS# is raised and then lowered) does not require the
E7H command code. If the “Continuous Read Mode” bits (M5-4) do not equal to (1, 0), the next command
requires the first E7H command code, thus returning to normal operation. A “Continuous Read Mode” Reset
command can be used to reset (M5-4) before issuing normal command.
Puya Semiconductor
Page 47 of 93
P25Q32H Datasheet
Figure 10-21a 4 x I/O Word Read Sequence ( M5-4 = (1,0) )
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
20 21
SCLK
Command
SI(IO0)
E7H
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
A23-16 A15-8 A7-0
P7-0 Dummy Byte1
Byte2
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
SCLK
A23-16 A15-8 A7-0
P7-0 Dummy Byte1
Byte2
4 X I/O Word Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode
The 4 X I/O Word Read command can be used to access a specific portion within a page by issuing “Set Burst
with Wrap”(77H) commands prior to E7H. The “Set Burst with Wrap”(77H) command can either enable or
disable the “Wrap Around” feature for the following E7H commands. When “Wrap Around” is enabled, the data
being accessed can be limited to either an8/16/32/64-byte section of a 256-byte page. The output data starts at
the initial address specified in the command, once it reaches the ending boundary of the 8/16/32/64-byte
section, the output will wrap around the beginning boundary automatically until CS# is pulled high to terminate
the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill
the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands.
The “Set Burst with Wrap” command allows three “Wrap Bits”W6-W4 to be set. The W4 bit is used to enable or
disable the “Wrap Around” operation while W6-W5 is used to specify the length of the wrap around section
within a page.
Puya Semiconductor
Page 48 of 93
P25Q32H Datasheet
10.22 4 X IO Octal Word Read(E3h)
The 4 X IO Octal Word Read (E3h) instruction is similar to the 4 X IO Read (EBh) instruction except that the
lower four Address bits (A0, A1, A2, A3) must equal 0. As a result, the dummy clocks are not required, which
further reduces the instruction overhead allowing even faster random access for code execution (XIP). The
Quad Enable bit (QE) of Status Register-2 must be set to enable the Octal Word Read Quad I/O Instruction.
4 X IO Octal Word Read with “Continuous Read Mode”
The 4 X IO Octal Word Read instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0). The upper nibble of the (M7-4)
controls the length of the next Octal Word Read Quad I/O instruction through the inclusion or exclusion of the
first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the IO pins should
be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after /CS is
raised and then lowered) does not require the E3h instruction code, as shown in Figure 27b. This reduces the
instruction sequence by eight clocks and allows the Read address to be immediately entered after /CS is
asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next instruction (after /CS is
raised and then lowered) requires the first byte instruction code, thus returning to normal operation. It is
recommended to input FFh on IO0 for the next instruction (8 clocks), to ensure M4 = 1 and return the device to
normal operation.
Figure 10-22 4 x I/O Octal Word Read Sequence (E3H)
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
SCLK
Command
SI(IO0)
E3H
4
0
4
0
4
0
4
0
4
0
4
0
4
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
A23-16 A15-8 A7-0
M7-0 Byte1
Byte2
CS#
0
1
2
3
4
5
6
7
SI(IO0)
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
WP#(IO2)
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
8
9
10 11
4
0
4
0
4
1
5
1
5
1
5
6
2
6
2
6
2
6
7
3
7
3
7
3
7
SCLK
A23-16 A15-8 A7-0
Puya Semiconductor
M7-0 Byte1
Byte2
Page 49 of 93
P25Q32H Datasheet
10.23 Set Read Parameters (C0h)
In QPI mode the “Set Read Parameters (C0H)” command can be used to configure the number of dummy
clocks for “Fast Read (0BH)”, “Quad I/O Fast Read (EBH)” and “Burst Read with Wrap (0CH)” command, and
to configure the number of bytes of “Wrap Length” for the “Burst Read with Wrap (0CH)” command. The “Wrap
Length” is set by W5-6 bit in the “Set Burst with Wrap (77H)” command. This setting will remain unchanged
when the device is switched from Standard SPI mode to QPI mode.
P5-P4
Dummy Clocks
0,0
0,1
1,0
1,1
4
4
6
8
Maximun Read
Freq.
80MHz
80MHz
108MHz
133MHz
P1-P0
Wrap Length
0,0
0,1
1,0
1,1
8-byte
16-byte
32-byte
64-byte
Figure 10-23 Set Read Parameters Sequence ( QPI )
CS#
0
1
2
3
SCLK
Command
C0H
SI(IO0)
P4
P0
SO(IO1)
P5
P1
P6
P2
P7
P3
WP#(IO2)
HOLD#(IO3)
Puya Semiconductor
Read
Parameter
Page 50 of 93
P25Q32H Datasheet
10.24 Burst Read with Wrap (0Ch)
The “Burst Read with Wrap (0CH)” command provides an alternative way to perform the read operation with
“Wrap Around” in QPI mode. This command is similar to the “Fast Read (0BH)” command in QPI mode, except
the addressing of the read operation will “Wrap Around” to the beginning boundary of the “Wrap Around” once
the ending boundary is reached. The “Wrap Length” and the number of dummy clocks can be configured by the
“Set Read Parameters (C0H)” command.
Figure 10-24 Burst Read with Wrap Sequence ( QPI )
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SCLK
IO switch from
input to output
Command
0CH
A15-8
A7-0
SI(IO0)
A23-16
20
16
12
8
4
0
Dummy*
4
0
4
0
4
SO(IO1)
21
17
13
9
5
1
5
1
5
1
5
WP#(IO2)
22
18
14
10
6
2
6
2
6
2
6
HOLD#(IO3)
23
19
15
11
7
3
7
3
7
3
7
Byte1
Byte2
*“Set Read Parameters” command (C0H)
can set the number of dummy clocks
Puya Semiconductor
Page 51 of 93
P25Q32H Datasheet
10.25 Enable QPI (38H)
The device support both Standard/Dual/Quad SPI and QPI mode. The “Enable QPI (38H)” command can
switch the device from SPI mode to QPI mode. See the command Table 2a for all support QPI commands. In
order to switch the device to QPI mode, the Quad Enable (QE) bit in Status Register-1 must be set to 1 first,
and “Enable QPI (38H)” command must be issued. If the QE bit is 0, the “Enable QPI (38H)” command will be
ignored and the device will remain in SPI mode. When the device is switched from SPI mode to QPI mode, the
existing Write Enable Latch and Program/Erase Suspend status, and the Wrap Length setting will remain
unchanged.
Figure 10-25 Enable QPI Sequence (38H )
CS#
SCLK
SI(IO0)
38H
10.26 Disable QPI (FFH)
To exit the QPI mode and return to Standard/Dual/Quad SPI mode, the “Disable QPI (FFH)” command must be
issued. When the device is switched from QPI mode to SPI mode, the existing Write Enable Latch and
Program/Erase Suspend status, and the Wrap Length setting will remain unchanged.
Figure 10-26 Disable QPI Sequence (QPI )
CS#
0
1
SCLK
Command
FFH
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Puya Semiconductor
Page 52 of 93
P25Q32H Datasheet
10.27 Page Erase (PE)
The Page Erase (PE) instruction is for erasing the data of the chosen Page to be "1". A Write Enable (WREN)
instruction must execute to set the Write Enable Latch (WEL) bit before sending the Page Erase (PE).
To perform a Page Erase with the standard page size (256 bytes), an opcode of 81h must be clocked into the device
followed by three address bytes comprised of 2 page address bytes that specify the page in the main memory to be
erased, and 1 dummy byte.
The sequence of issuing PE instruction is: CS# goes low → sending PE instruction code→ 3-byte address on
SI → CS# goes high.
Figure 10-27 Page Erase Sequence (Command 81)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
SI
24-bit address
81H
23 22
MSB
2
1
6
7
0
Figure 10-27a Page Erase Sequence (QPI)
CS#
0
1
2
3
4
5
SCLK
Command
81H
Puya Semiconductor
A23-16
A15-8
A7-0
SI(IO0)
20
16
12
8
4
0
SO(IO1)
21
17
13
9
5
1
WP#(IO2)
22
18
14
10
6
2
HOLD#(IO3)
23
19
15
11
7
3
Page 53 of 93
P25Q32H Datasheet
10.28 Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". A Write Enable (WREN)
instruction must execute to set the Write Enable Latch (WEL) bit before sending the Sector Erase (SE). Any
address of the sector is a valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the
byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and
not executed.
Address bits [Am-A12] (Am is the most significant address) select the sector address.
The sequence of issuing SE instruction is: CS# goes low → sending SE instruction code→ 3-byte address on
SI → CS# goes high.
The SIO[3:1] are don't care.
Figure 10-28 Sector Erase (SE) Sequence (Command 20)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
SI
24-bit address
20H
23 22
MSB
2
1
6
7
0
Figure 10-28a Sector Erase (SE) Sequence (QPI)
CS#
0
1
2
3
4
5
SCLK
Command
20H
A23-16
A15-8
A7-0
SI(IO0)
20
16
12
8
4
0
SO(IO1)
21
17
13
9
5
1
WP#(IO2)
22
18
14
10
6
2
HOLD#(IO3)
23
19
15
11
7
3
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The
Write in progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets
1 during the tSE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL)
bit is reset. If the sector is protected by BP4, BP3, BP2, BP1, BP0 bits, the Sector Erase (SE) instruction will
not be executed on the sector.
Puya Semiconductor
Page 54 of 93
P25Q32H Datasheet
10.29 Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is
used for 32K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write
Enable Latch (WEL) bit before sending the Block Erase (BE32K). Any address of the block is a valid address
for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the least significant
bit of address byte has been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE32K instruction is: CS# goes low → sending BE32K instruction code → 3-byte
address on SI → CS# goes high.
The SIO[3:1] are don't care.
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write
in Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the
tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is
cleared. If the block is protected by BP4, BP3, BP2, BP1,BP0 bits, the array data will be protected (no change)
and the WEL bit still be reset.
Figure 10-29 Block Erase 32K(BE32K)
Sequence (Command 52 )
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
SI
24-bit address
52H
Figure 10-29a Block Erase 32K(BE32K)
23 22
MSB
2
1
6
7
0
Sequence (Command 52 )
CS#
0
1
2
3
4
5
SCLK
Command
52H
Puya Semiconductor
A23-16
A15-8
A7-0
SI(IO0)
20
16
12
8
4
0
SO(IO1)
21
17
13
9
5
1
WP#(IO2)
22
18
14
10
6
2
HOLD#(IO3)
23
19
15
11
7
3
Page 55 of 93
P25Q32H Datasheet
10.30 Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
64K-byte block erase operation. A Write Enable (WREN) instruction must execute to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE). Any address of the block is a valid address for Block
Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address byte
been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte address on
SI→CS# goes high.
The SIO[3:1] are "don't care".
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked during the Block Erase cycle is in progress. The WIP sets 1 during the
tBE timing, and sets 0 when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If
the block is protected by BP4, BP3, BP2, BP1, BP0 bits, the Block Erase (BE) instruction will not be executed
on the block.
Figure 10-30 Block Erase (BE)
Sequence (Command D8)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
SI
24-bit address
D8H
Figure 10-30a Block Erase (BE)
23 22
MSB
2
1
6
7
0
Sequence (QPI)
CS#
0
1
2
3
4
5
SCLK
Command
D8H
Puya Semiconductor
A23-16
A15-8
A7-0
SI(IO0)
20
16
12
8
4
0
SO(IO1)
21
17
13
9
5
1
WP#(IO2)
22
18
14
10
6
2
HOLD#(IO3)
23
19
15
11
7
3
Page 56 of 93
P25Q32H Datasheet
10.31 Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN)
instruction must execute to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The
CS# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in);
otherwise, the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→ sending CE instruction code→ CS# goes high.
The SIO[3:1] are "don't care".
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked during the Chip Erase cycle is in progress. The WIP sets 1 during the
tCE timing, and sets 0 when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If
the chip is protected by BP4,BP3, BP2, BP1, BP0 bits, the Chip Erase (CE) instruction will not be executed. It
will be only executed when all Block Protect(BP4, BP3, BP2, BP1, BP0) are set to “None protected”.
Figure 10-31 Chip Erase (CE) Sequence (Command 60 or C7)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
SI
60H or C7H
Figure 10-31a Chip Erase (CE) Sequence (QPI)
CS#
0
1
SCLK
Command
C7H or 60H
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Puya Semiconductor
Page 57 of 93
P25Q32H Datasheet
10.32 Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must execute to set the Write Enable Latch (WEL) bit before sending the Page Program (PP).
The device programs only the last 256 data bytes sent to the device. If the entire 256 data bytes are going
to be programmed, A7-A0 (The eight least significant address bits) should be set to 0. If the eight least
significant address bits (A7-A0) are not all 0, all transmitted data going beyond the end of the current page
are programmed from the start address of the same page (from the address A7-A0 are all 0). If more than
256 bytes are sent to the device, the data of the last 256-byte is programmed at the request page and
previous data will be disregarded. If less than 256 bytes are sent to the device, the data is programmed at
the requested address of the page without effect on other address of the same page.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte address on
SI→ at least 1-byte on data on SI→ CS# goes high.
The CS# must be kept low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary (the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be
executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked during the Page Program cycle is in progress. The WIP sets 1 during
the tPP timing, and sets 0 when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is
reset. If the page is protected by BP4, BP3, BP2, BP1, BP0 bits, the Page Program (PP) instruction will not be
executed.
The SIO[3:1] are "don't care".
Figure 10-32 Page Program (PP) Sequence (Command 02)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
SI
24- bit address
02H
23 22 21
3
Data Byte 1
2
1 0
MSB
7
6
5
4
3
2
1
0
MSB
2079
2077
2078
2076
2075
2073
2074
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2072
CS#
1
0
SCLK
Data Byte 2
SI
7
6
MSB
Puya Semiconductor
5
4
3
2
Data Byte 3
1
0 7
MSB
6
5
4
3
2
Data Byte 256
1
0
7
6
5
4
3
2
MSB
Page 58 of 93
P25Q32H Datasheet
Figure 10-32a Page Program (PP) Sequence (QPI)
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17
519
2
517
1
518
0
516
CS#
SCLK
Command
02H
A23-16 A15-8
Byte1
A7-0
Byte2
Byte256
SI(IO0)
A20 A16 A12 A8
A4
A0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
SO(IO1)
A21 A17 A13 A9
A5
A1
5
1
5
1
5
1
5
1
5
0
5
1
5
1
WP#(IO2)
A22 A18 A14 A10 A6
A2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
HOLD#(IO3)
A23 A19 A15 A11 A7
A3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
MSB
10.33 Dual Input Page Program (DPP)
The Dual Input Page Program (DPP) instruction is similar to the standard Page Program command and can be
used to program anywhere from a single byte of data up to 256 bytes of data into previously erased memory
locations. The Dual-Input Page Program command allows two bits of data to be clocked into the device on
every clock cycle rather than just one.
A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the
Dual Input Page Program (DPP). The Dual Input Page Programming takes two pins: SIO0, SIO1 as data input,
which can improve programmer performance and the effectiveness of application. The other function
descriptions are as same as standard page program.
The sequence of issuing DPP instruction is: CS# goes low→ sending DPP instruction code→ 3-byte address
on SI→at least 1-byte on data on SIO[1:0]→ CS# goes high.
Figure 10-33 Page Program (DPP) Sequence (Command A2)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
SI(IO0)
24- bitaddress
A2H
23 22 21
Byte1
3
2
1
0
Byte2
6
4
2
0
6
4
2
0
7
5
3
1
7
5
3
1
MSB
SO(IO1)
Byte5
SI(IO0)
SO(IO1)
Byte6
Byte255
1055
1054
1053
1052
1051
1050
1049
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCLK
1048
CS#
Byte256
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
Puya Semiconductor
Page 59 of 93
P25Q32H Datasheet
10.34 Quad Page Program (QPP)
The Quad Page Program (QPP) instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must execute to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1"
before sending the Quad Page Program (QPP). The Quad Page Programming takes four pins: SIO0, SIO1,
SIO2, and SIO3 as data input, which can improve programmer performance and the effectiveness of
application. The QPP operation frequency supports as fast as fQPP. The other function descriptions are as
same as standard page program.
The sequence of issuing QPP instruction is: CS# goes low→ sending QPP instruction code→ 3-byte address
on SIO0 → at least 1-byte on data on SIO[3:0]→CS# goes high.
Figure 10-34 Quad Page Program (QPP) Sequence (Command 32)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32
33 34 35 36 37 38 39
SCLK
Command
SI(IO0)
24- bit address
32H
23 22 21
Byte1
3
2
1
0
Byte2
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
MSB
543
542
541
540
539
538
48 49 50 51 52 53 54 55
537
40 41 42 43 44 45 46 47
536
CS#
SCLK
Byte11 Byte12
Byte253
Byte256
SI(IO0)
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
7
3
Puya Semiconductor
Page 60 of 93
P25Q32H Datasheet
10.35 Erase Security Registers (ERSCUR)
The product provides three 1024-byte Security Registers which can be erased and programmed individually.
These registers may be used by the system manufacturers to store security and other important information
separately from the main memory array.
The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable (WREN)
command must previously have been executed to set the Write Enable Latch (WEL) bit.
The Erase Security Registers command sequence: CS# goes low → sending ERSCUR instruction
→ sending 24 bit address → CS# goes high.
CS# must be driven high after the eighth bit of the command code has been latched in; otherwise the Erase
Security Registers command is not executed. As soon as CS# is driven high, the self-timed Erase Security
Registers cycle (whose duration is tSE) is initiated. While the Erase Security Registers cycle is in progress, the
Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP)
bit is 1 during the self-timed Erase Security Registers cycle, and is 0 when it is completed. The Security
Registers Lock Bit (LB3-1) in the Status Register can be used to OTP protect the security registers. Once the
LB bit is set to 1, the Security Registers will be permanently locked; the Erase Security Registers command will
be ignored.
Address
A23-16
A15-12
A11-10
A9-0
Security Register #1
00H
0001
00
Don’t care
Security Register #2
00H
0010
00
Don’t care
Security Register #3
00H
0011
00
Don’t care
Figure 10-35 Erase Security Registers (ERSCUR) Sequence (Command 44)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
SI
Puya Semiconductor
44H
24 bit address
23 22
MSB
2
1
0
Page 61 of 93
P25Q32H Datasheet
10.36 Program Security Registers (PRSCUR)
The Program Security Registers command is similar to the Page Program command. It allows from 1 to 1024
bytes Security Registers data to be programmed. A Write Enable (WREN) command must previously have
been executed to set the Write Enable Latch (WEL) bit before sending the Program Security Registers
command.
The Program Security Registers command sequence: CS# goes low → sending PRSCUR instruction
→ sending 24 bit address → sending at least one byte data → CS# goes high.
As soon as CS# is driven high, the self-timed Program Security Registers cycle (whose duration is tPP) is
initiated. While the Program Security Registers cycle is in progress, the Status Register may be read to check
the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Program
Security Registers cycle, and is 0 when it is completed.
If the Security Registers Lock Bit (LB3-1) is set to 1, the Security Registers will be permanently locked.
Program Security Registers command will be ignored.
Address
A23-16
A15-12
A11-10
A9-0
Security Register #1
00H
0001
00
Byte Address
Security Register #2
00H
0010
00
Byte Address
Security Register #3
00H
0011
00
Byte Address
Figure 10-36 Program Security Registers (PRSCUR) Sequence (Command 42)
CS#
0
1
2
3
4
5
6
7
8 9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
SI
42H
24- bit address
23 22 21
3
Data Byte 1
2
1 0 7
MSB
6
5
4
3
2
1
0
MSB
4127
4125
4126
4124
4123
4121
4122
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
4120
CS#
1
0
SCLK
Data Byte 2
SI
7
6
MSB
Puya Semiconductor
5
4
3
2
Data Byte 3
1
0 7 6
MSB
5
4
3
2
Data Byte 1024
1
0
7
6
5
4
3
2
MSB
Page 62 of 93
P25Q32H Datasheet
10.37 Read Security Registers (RDSCUR)
The Read Security Registers command is similar to Fast Read command. The command is followed by a
3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then the
memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fC, during
the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically
incremented to the next higher address after each byte of data is shifted out. Once the A9-A0 address reaches
the last byte of the register (Byte 3FFH), it will reset to 000H, the command is completed by driving CS# high.
The sequence of issuing RDSCUR instruction is : CS# goes low → sending RDSCUR instruction → sending 24
bit address → 8 bit dummy byte → Security Register data out on SO → CS# goes high.
Address
A23-16
A15-12
A11-10
A9-0
Security Register #1
00H
0001
00
Byte Address
Security Register #2
00H
0010
00
Byte Address
Security Register #3
00H
0011
00
Byte Address
Figure 10-37 Read Security Registers (RDSCUR) Sequence (Command 48)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
24- bitaddress
23 22 21
48H
3
2
1
0
High-Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
DummyByte
SI
7
6
5
4
3
2
1
0
Data Out1
SO
Puya Semiconductor
7 6
MSB
5
4
3
Data Out2
2
1
0
7 6
MSB
5
Page 63 of 93
P25Q32H Datasheet
10.38 Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (to
entering the Deep Power-down mode), the standby current is reduced from ISB1 to ISB2). The Deep
Power-down mode requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down
mode, the device is not active and all Write/Program/Erase instruction are ignored. When CS# goes high, it's
only in standby mode not deep power-down mode. It's different from Standby mode.
The sequence of issuing DP instruction is: CS# goes low→ sending DP instruction code→ CS# goes high.
Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down
mode (RDP) and Read Electronic Signature (RES) instruction. (RES instruction to allow the ID been read
out). When Power- down, the deep power-down mode automatically stops, and when power-up, the device
automatically is in standby mode. For RDP instruction the CS# must go high exactly at the byte boundary
(the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not be executed. As
soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode
and reducing the current to ISB2.
Figure 10-38 Deep Power-down (DP) Sequence (Command B9)
CS#
SCLK
SI
0
1
2
3
4
5
6
tDP
7
Command
Standby mode
Deep power-down mode
B9H
Figure 10-38a Deep Power-down (DP) Sequence (QPI)
tDP
CS#
0
1
SCLK
Command
B9H
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Stand-by mode
Puya Semiconductor
Deep Power-down mode
Page 64 of 93
P25Q32H Datasheet
10.39 Release form Deep Power-Down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select (CS#) High.
When Chip Select (CS#) is driven high, the device is put in the Stand-by Power mode. If the device was not
previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the
device was previously in the Deep Power-down mode, though, the transition to the Stand-by Power mode
is delayed by tRES2, and Chip Select (CS#) must remain High for at least tRES2(max). Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as
table of ID Definitions. This is not the same as RDID instruction. It is not recommended to use for new
design. For new design, please use RDID instruction. Even in Deep power-down mode, the RDP and RES
are also allowed to be executed, only except the device is in progress of program/erase/write cycle; there's
no effect on the current program/erase/ write cycle in progress.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs
repeatedly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not
previously in Deep Power-down mode, the device transition to standby mode is immediate. If the device
was previously in Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must
remain to high at least tRES2 (max). Once in the standby mode, the device waits to be selected, so it can be
receive, decode, and execute instruction.
The RDP instruction is for releasing from Deep Power-Down Mode.
Figure 10-39 Read Electronic Signature (RES) Sequence (Command AB)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31 32 33 34 35 36 37 38
SCLK
Command
SI
SO
ABH
High-Z
tRES2
3 Dummy Bytes
23 22
2
1
0
MSB
Electronic Signature Out
7
MSB
Puya Semiconductor
6
5
4
3
2
1
0
Deep Power-down mode
Standby Mode
Page 65 of 93
P25Q32H Datasheet
Figure 10-39a Read Electronic Signature (RES) Sequence (QPI)
tRES2
CS#
0
1
2
3
4
5
6
7
8
SCLK
3 dummy bytes
Command
IO switch from
input to output
ABH
SI(IO0)
4
0
SO(IO1)
5
1
WP#(IO2)
6
2
7
3
HOLD#(IO3)
1
5
Device ID
Deep Power-down mode Stand-by mode
Figure 10-39b Release from Deep Power-down (RDP) Sequence (Command AB)
CS#
0
1
2
3
4
5
6
tRES1
7
SCLK
Command
SI
ABH
Deep Power- down mode
Stand-by mode
Figure 10-39c Release from Deep Power-down (RDP) Sequence (QPI)
CS#
tRES1
0
1
SCLK
Command
ABH
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Deep Power-down mode Stand-by mode
Puya Semiconductor
Page 66 of 93
P25Q32H Datasheet
10.40 Read Electronic Manufacturer ID & Device ID (REMS)
The REMS instruction returns both the JEDEC assigned manufacturer ID and the device ID. The Device ID
values are listed in "Table ID Definitions".
The REMS instruction is initiated by driving the CS# pin low and sending the instruction code "90h" followed by
two dummy bytes and one address byte (A7~A0). After which the manufacturer ID for PUYA (85h) and the
device ID are shifted out on the falling edge of SCLK with the most significant bit (MSB) first. If the address byte
is 00h, the manufacturer ID will be output first, followed by the device ID. If the address byte is 01h, then the
device ID will be output first, followed by the manufacturer ID. While CS# is low, the manufacturer and device
IDs can be read continuously, alternating from one to the other. The instruction is completed by driving CS#
high.
Figure 10-40 Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
2 dummy byte and
1 address byte
23 22 21
3 2
Command
SI
90H
1
0
High-Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
SI
Device ID
Manufacturer ID
SO
7
6
5
4
3
2
1
0
MSB
7
6
5
4
3
2
1
0
MSB
Figure 10-40a Read Electronic Manufacturer & Device ID (REMS) Sequence (QPI)
CS#
0
1
2
3
4
5
6
7
8
9
10
SCLK
Command
90H
A23-16
A15-8
IO switch from
input to output
A7-0
SI(IO0)
20
16
12
8
4
0
4
0
4
0
SO(IO1)
21
17
13
9
5
1
5
1
5
1
WP#(IO2)
22
18
14
10
6
2
6
2
6
2
HOLD#(IO3)
23
19
15
11
7
3
7
3
7
3
MID
Puya Semiconductor
Device ID
Page 67 of 93
P25Q32H Datasheet
10.41 Dual I/O Read Electronic Manufacturer ID & Device ID (DREMS)
The DREMS instruction is similar to the REMS command and returns the JEDEC assigned manufacturer ID
which takes two pins: SIO0, SIO1 as address input and ID output I/O
The instruction is initiated by driving the CS# pin low and shift the instruction code "92h" followed by two
dummy bytes and one bytes address (A7~A0). After which, the Manufacturer ID for PUYA (85h) and the
Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first. If the one-byte
address is initially set to 01h, then the device ID will be read first and then followed by the Manufacturer ID.
The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The
instruction is completed by driving CS# high.
Figure 10-41 DUAL I/O Read Electronic Manufacturer & Device ID (DREMS) Sequence (Command 92)
CS#
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19
20 21 22 23
SCLK
Command
SI(IO0)
92H
SO(IO1)
6
4
2
0
6
4
2
0
6
7
5
3
1
7
5
3
1
7
Dummy byte
4
2
0
6
5
3
1
7
ADD byte
Dummy byte
4
2
0
5
3
1
M7-0
CS#
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
SI(IO0)
6
SO(IO1)
7
4
2
0
6
5
3
1
7
MFRID
Puya Semiconductor
4
2
0
6
5
3
1
7
DeviceID
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
5
3
1
7
5
3
1
7
5
3
1
7
5
3
1
MFRID
(Repeat)
DeviceID
(Repeat)
MFRID
(Repeat)
DeviceID
(Repeat)
Page 68 of 93
P25Q32H Datasheet
10.42 Quad I/O Read Electronic Manufacturer ID & Device ID (QREMS)
The QREMS instruction is similar to the REMS command and returns the JEDEC assigned manufacturer ID
which takes four pins: SIO0, SIO1,SIO2,SIO3 as address input and ID output I/O
The instruction is initiated by driving the CS# pin low and shift the instruction code "94h" followed by two
dummy bytes and one bytes address (A7~A0). After which, the Manufacturer ID for PUYA (85h) and the
Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first. If the one-byte
address is initially set to 01h, then the device ID will be read first and then followed by the Manufacturer ID.
The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The
instruction is completed by driving CS# high.
Figure 10-42 QUAD I/O Read Electronic Manufacturer & Device ID (QREMS) Sequence (Command 94)
CS#
0
8
9
1
2
3
4
5
6
7
4
SO(IO1)
10 11 12 13 14 15 16 17 18 19
20 21 22 23
0
4
0
4
0
4
0
4
0
4
0
5
1
5
1
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
6
2
6
2
HOLD#(IO3)
7
3
7
3
7
3
7
3
7
3
7
3
SCLK
Command
SI(IO0)
94H
A23-16 A15-8 A7-0 M7-0
Dummy
MFRID DID
CS#
24 25 26 27 28 29 30 31
SCLK
SI(IO0)
4
0
4
0
4
0
4
0
SO(IO1)
5
1
5
1
5
1
5
1
WP#(IO2)
6
2
6
2
6
2
6
2
HOLD#(IO3) 7
3
7
3
7
3
7
3
MFRID DID MFRID DID
Repeat Repeat Repeat Repeat
Puya Semiconductor
Page 69 of 93
P25Q32H Datasheet
10.43 Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The
PUYA Manufacturer ID and Device ID are list as "Table . ID Definitionsi”.
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code → 24-bits ID
data out on SO→ to end RDID operation can use CS# to high at any time during data out. While Program
/Erase operation is in progress, it will not decode the RDID instruction, so there's no effect on the cycle of
program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage.
Figure 10-43 Read Identification (RDID) Sequence (Command 9F)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
SI
9FH
SO
7
6
Manufacturer ID
5 4 3 2 1
0
MSB
CS#
16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
SCLK
SI
SO
7
Memory Type ID
6 5 4 3 2 1
MSB
0
7
Capacity ID
5 4 3 2
6
1
0
MSB
Figure 10-43a Read Identification (RDID) Sequence (QPI)
CS#
0
1
2
3
4
5
6
SCLK
Command
9FH
IO switch from
input to output
SI(IO0)
4
0
12
8
4
0
SO(IO1)
5
1
13
9
5
1
WP#(IO2)
6
2
14 10
6
2
HOLD#(IO3)
7
3
15
7
3
MID
11
ID15-8
ID7-0
Table ID Definitions
P25Q32H
Puya Semiconductor
RDID
manufacturer ID
command
85
memory type
60
RES
electronic ID
command
15
memory density
16
REMS
manufacturer ID
device ID
command
85
15
Page 70 of 93
P25Q32H Datasheet
10.44 Program/Erase Suspend/Resume
The Suspend instruction interrupts a Page Program, Sector Erase, or Block Erase operation to allow access
to the memory array. After the program or erase operation has entered the suspended state, the memory
array can be read except for the page being programmed or the sector or block being erased.
Readable Area of Memory While a Program or Erase Operation is Suspended
Suspended Operation
Readable Region of Memory Array
Page Program
All but the Page being programmed
Page Erase
All but the Page being erased
Sector Erase(4KB)
All but the 4KB Sector being erased
Block Erase(32KB)
All but the 32KB Block being erased
Block Erase(64KB)
All but the 64KB Block being erased
When the Serial NOR Flash receives the Suspend instruction, there is a latency of tPSL or tESL before the
Write Enable Latch (WEL) bit clears to “0” and the SUS2 or SUS1 sets to “1”, after which the device is ready
to accept one of the commands listed in "Table Acceptable Commands During Program/Erase Suspend after
tPSL/tESL" (e.g. FAST READ). Refer to " AC Characteristics" for tPSL and tESL timings. "Table Acceptable
Commands During Suspend (tPSL/tESL not required)" lists the commands for which the tPSL and tESL
latencies do not apply. For example, RDSR, RDSCUR, RSTEN, and RST can be issued at any time after the
Suspend instruction.
Status Register bit 15 (SUS2) and bit 10 (SUS1) can be read to check the suspend status. The SUS2
(Program Suspend Bit) sets to “1” when a program operation is suspended. The SUS1 (Erase Suspend Bit)
sets to “1” when an erase operation is suspended. The SUS2 or SUS1 clears to “0” when the program or
erase operation is resumed.
Acceptable Commands During Program/Erase Suspend after tPSL/tESL
Command name
Command Code
Suspend Type
Program Suspend
Erase Suspend
READ
03H
•
•
FAST READ
0BH
•
•
DREAD
3BH
•
•
QREAD
6BH
•
•
2READ
BBH
•
•
4READ
EBH
•
•
RDSFDP
5AH
•
•
RDID
9FH
•
•
REMS
90H
•
•
DREMS
92H
•
•
QREMS
94H
•
•
RDSCUR
48H
•
•
SBL
77H
•
•
WREN
06H
•
RESUME
7AH OR 30H
•
•
PP
02H
•
DPP
A2H
•
QPP
32H
•
Puya Semiconductor
Page 71 of 93
P25Q32H Datasheet
Acceptable Commands During Suspend（tPSL/tESL not required）
Command name
Command Code
Suspend Type
Program Suspend
Erase Suspend
WRDI
04H
•
•
RDSR
05H
•
•
RDSR2
35H
•
•
ASI
25H
•
•
RES
ABH
•
•
RSTEN
66H
•
•
RST
99H
•
•
NOP
00H
•
•
Figure 10-44 Resume to Suspend Latency
tPRS / tERS
CS#
Resume Command
Suspend Command
tPRS: Program Resume to another Suspend
tERS: Erase Resume to another Suspend
10.45 Erase Suspend to Program
The “Erase Suspend to Program” feature allows Page Programming while an erase operation is suspended.
Page Programming is permitted in any unprotected memory except within the sector of a suspended Sector
Erase operation or within the block of a suspended Block Erase operation. The Write Enable (WREN)
instruction must be issued before any Page Program instruction.
A Page Program operation initiated within a suspended erase cannot itself be suspended and must be
allowed to finish before the suspended erase can be resumed. The Status Register can be polled to
determine the status of the Page Program operation. The WEL and WIP bits of the Status Register will
remain “1” while the Page Program operation is in progress and will both clear to “0” when the Page Program
operation completes.
Figure 10-45 Suspend to Read/Program Latency
tPSL / tESL
CS#
Suspend Command
Read/Program command
tPSL: Program latency
tESL: Erase latency
Puya Semiconductor
Page 72 of 93
P25Q32H Datasheet
Figure 10-45a Suspend to Read/Program Latency(QPI)
CS#
tPSL/tESL
0
1
SCLK
Command
75H or B0H
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Read/Program Command
Notes:
1. Please note that Program only available after the Erase-Suspend operation
2. To check suspend ready information, please read status register bit15 (SUS2) and bit10(SUS1)
Puya Semiconductor
Page 73 of 93
P25Q32H Datasheet
10.46 Program Resume and Erase Resume
The Resume instruction resumes a suspended Page Program, Sector Erase, or Block Erase operation.
Before issuing the Resume instruction to restart a suspended erase operation, make sure that there is no
Page Program operation in progress.
Immediately after the Serial NOR Flash receives the Resume instruction, the WEL and WIP bits are set to “1”
and the SUS2 or SUS1 is cleared to “0”. The program or erase operation will continue until finished
("Resume to Read Latency") or until another Suspend instruction is received. A resume-to-suspend latency
of tPRS or tERS must be observed before issuing another Suspend instruction ("Resume to Suspend
Latency").
Figure 10-46 Resume to Read Latency
tSE /tBE / tPP
CS#
Resume Command
Read Command
Figure 10-46a Resume to Read Latency(QPI)
CS#
0
1
SCLK
Command
7AH or 30H
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Resume previously suspended program or erase
10.47 No Operation (NOP)
The "No Operation" command is only able to terminate the Reset Enable (RSTEN) command and will not
affect any other command.
The SIO[3:1] are don't care.
Puya Semiconductor
Page 74 of 93
P25Q32H Datasheet
10.48 Individual Block Lock (SBLK)
The Individual Block Lock provides an alternative way to protect the memory array from adverse
Erase/Program. In order to use the Individual Block Locks, the WPS bit in Configure Register must be set to
1. If WPS=0, the write protection will be determined by the combination of CMP, BP[4:0] bits in the Status
Registers. The Individual Block Lock bits are volatile bits. The default values after device power up or after a
Reset are 1, so the entire memory array is being protected.
The SBLK instruction is for write protection a specified block (or sector) of memory, using AMAX-A16 or
(AMAX-A12) address bits to assign a 64Kbyte block (or 4K bytes sector) to be protected as read only.
The WREN (Write Enable) instruction is required before issuing SBLK instruction.
The sequence of issuing SBLK instruction is: CS# goes low → send SBLK (36h) instruction→send 3-byte
address assign one block (or sector) to be protected on SI pin → CS# goes high. The CS# must go high
exactly at the byte boundary, otherwise the instruction will be rejected and not be executed.
Figure 10-48 Individual Block Lock(Command 36H)
CS#
0
SCLK
1
2
3
4
5
6
7
8
9
29 30 31
Command
SI
24BitsAddress
36H
23 22
MSB
2
1
6
7
0
Figure 10-48a Individual Block Lock(QPI)
CS#
0
1
2
3
4
5
SCLK
Command
36H
Puya Semiconductor
A23-16
A15-8
A7-0
SI(IO0)
20
16
12
8
4
0
SO(IO1)
21
17
13
9
5
1
WP#(IO2)
22
18
14
10
6
2
HOLD#(IO3)
23
19
15
11
7
3
Page 75 of 93
P25Q32H Datasheet
10.49 Individual Block Unlock (SBULK)
The Individual Block Lock provides an alternative way to protect the memory array from adverse
Erase/Program. In order to use the Individual Block Locks, the WPS bit in Configure Register must be set to
1. If WPS=0, the write protection will be determined by the combination of CMP, BP[4:0] bits in the Status
Registers. The Individual Block Lock bits are volatile bits. The default values after device power up or after a
Reset are 1, so the entire memory array is being protected.
The SBULK instruction will cancel the block (or sector) write protection state using AMAX-A16 or
(AMAX-A12) address bits to assign a 64Kbyte block (or 4K bytes sector) to be unprotected.
The WREN (Write Enable) instruction is required before issuing SBULK instruction.
The sequence of issuing SBULK instruction is: CS# goes low → send SBULK (39h) instruction→send 3-byte
address assign one block (or sector) to be protected on SI pin → CS# goes high. The CS# must go high
exactly at the byte boundary, otherwise the instruction will be rejected and not be executed.
Figure 10-49 Individual Block Unlock(Command 39H)
CS#
0
SCLK
1
2
3
4
5
6
7
8
9
29 30 31
Command
SI
24BitsAddress
39H
23 22
MSB
2
1
6
7
0
Figure 10-49a Individual Block Unlock(QPI)
CS#
0
1
2
3
4
5
SCLK
Command
39H
Puya Semiconductor
A23-16
A15-8
A7-0
SI(IO0)
20
16
12
8
4
0
SO(IO1)
21
17
13
9
5
1
WP#(IO2)
22
18
14
10
6
2
HOLD#(IO3)
23
19
15
11
7
3
Page 76 of 93
P25Q32H Datasheet
10.50 Read Block Lock Status (RDBLK)
The Individual Block Lock provides an alternative way to protect the memory array from adverse
Erase/Program. In order to use the Individual Block Locks, the WPS bit in Configure Register must be set to
1. If WPS=0, the write protection will be determined by the combination of CMP, BP[4:0] bits in the Status
Registers. The Individual Block Lock bits are volatile bits. The default values after device power up or after a
Reset are 1, so the entire memory array is being protected.
The RDBLOCK instruction is for reading the status of protection lock of a specified block (or sector), using
AMAX-A16 (or AMAX-A12) address bits to assign a 64K bytes block (4K bytes sector) and read protection
lock status bit which the first byte of Read-out cycle. The status bit is"1" to indicate that this block has be
protected, that user can read only but cannot write/program /erase this block. The status bit is "0" to indicate
that this block hasn't be protected, and user can read and write this block.
The sequence of issuing RDBLOCK instruction is: CS# goes low → send RDBLOCK (3Ch) instruction →
send 3-byte address to assign one block on SI pin → read block's protection lock status bit on SO pin → CS#
goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are "don't
care" in SPI mode.
Figure 10-50 Read Block Lock Status(Command 3CH)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Command
SI
SO
24- bit address
3CH
23
High-Z
MSB
22 21
3
2
1
0
Data Byte
MSB
7
6
9
10
5
4
3
2
1
0
Figure 10-50a Read Block Lock Status (QPI)
CS#
0
1
2
3
4
5
6
7
8
SCLK
Command
3CH
A23-16
A15-8
IO switch from
input to output
A7-0
SI(IO0)
20
16
12
8
4
0
X
0
X
0
SO(IO1)
21
17
13
9
5
1
X
X
X
X
WP#(IO2)
22
18
14
10
6
2
X
X
X
X
HOLD#(IO3)
23
19
15
11
7
3
X
X
X
X
Lock Value
Puya Semiconductor
Page 77 of 93
P25Q32H Datasheet
10.51 Global Block Lock (GBLK)
The GBLK instruction is for enable the lock protection block of the whole chip.
The WREN (Write Enable) instruction is required before issuing GBLK instruction.
The sequence of issuing GBLK instruction is: CS# goes low → send GBLK (7Eh) instruction →CS# goes
high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are "don't
care" in SPI mode.
The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be
executed.
Figure 10-51 Global Block Lock(Command 7EH)
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
Command
7EH
High-Z
Figure 10-51a Global Block Lock(QPI)
CS#
0
1
SCLK
Command
7EH
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Puya Semiconductor
Page 78 of 93
P25Q32H Datasheet
10.52 Global Block Unlock (GBULK)
The GBULK instruction is for disable the lock protection block of the whole chip.
The WREN (Write Enable) instruction is required before issuing GBULK instruction.
The sequence of issuing GBULK instruction is: CS# goes low → send GBULK (98h) instruction →CS# goes
high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are "don't
care" in SPI mode.
The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be
executed.
Figure 10-52 Global Block Unlock(Command 98H)
CS#
SCLK
SI
SO
0
1
2
3
4
5
6
7
Command
98H
High-Z
Figure 10-52a Global Block Unlock(QPI)
CS#
0
1
SCLK
Command
98H
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Puya Semiconductor
Page 79 of 93
P25Q32H Datasheet
10.53 Software Reset (RSTEN/RST)
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset
(RST) command. It returns the device to a standby mode. All the volatile bits and settings will be cleared then,
which makes the device return to the default status as power on.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform
the Reset operation. If there is any other command to interrupt after the Reset-Enable command, the
Reset-Enable will be invalid.
The SIO[3:1] are "don't care".
If the Reset command is executed during program or erase operation, the operation will be disabled, the data
under processing could be damaged or lost.
Figure 10-53 Software Reset Recovery
CS#
66H
99H
tReady
Mode
Stand-by Mode
Figure 10-53a Reset Sequence
CS#
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCLK
SI
Command
Command
66H
99H
High -Z
SO
Figure 10-53b Reset Sequence(QPI)
CS#
0
1
0
1
SCLK
Command
Command
66H
99H
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
Puya Semiconductor
Page 80 of 93
P25Q32H Datasheet
10.54 RESET
Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device
is at the following states:
- Standby mode
- All the volatile bits such as WEL/WIP/SRAM lock bit will return to the default status as power on.
If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation
and data could be lost. During the resetting cycle, the SO data becomes high impedance and the current will
be reduced to minimum.
Figure 10-54 RESET Timing
CS#
tRHSL
SCLK
tRH
tRS
RESET#
tRLRH
tREADY1/tREADY2
RESET Timing (Power On)
Symbol
Parameter
tRHSL
Reset# high before CS# low
Min.
1
Typ.
Max.
Unit
us
tRS
Reset# setup time
15
ns
tRH
Reset# hold time
15
ns
Reset# low pulse width
1
us
Reset Recovery time
30
us
tRLRH
tREADY1
RESET Timing (Other Operation)
Symbol
Parameter
tRHSL
Reset# high before CS# low
Min.
1
Typ.
Max.
Unit
us
tRS
Reset# setup time
15
ns
tRH
Reset# hold time
15
ns
Reset# low pulse width
1
us
Reset Recovery time (except
WRSR/WRCR)
30
us
tRLRH
tREADY2
Reset Recovery time (for WRSR/WRCR)
Puya Semiconductor
8
12
ms
Page 81 of 93
P25Q32H Datasheet
10.55 Read Unique ID (RUID)
The Read Unique ID command accesses a factory-set read-only 128bit number that is unique to each
P25Qxx device. The Unique ID can be used in conjunction with user software methods to help prevent
copying or cloning of a system.
The Read Unique ID command sequence: CS# goes low → sending Read Unique ID command →Dummy
Byte1 →Dummy Byte2 →Dummy Byte3 → Dummy Byte4 → 128bit Unique ID Out → CS# goes high.
The command sequence is show below.
Figure 10-55
Read Unique ID (RUID) Sequence (Command 4B)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
3 bytes dummy
4BH
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43
164 165 166
SCLK
DummyByte
SI
128 bit unique serial number
SO
Puya Semiconductor
127 126 125 124
MSB
3
2
1
0
Page 82 of 93
P25Q32H Datasheet
10.56 Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the
functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These
parameter tables can be interrogated by host system software to enable adjustments needed to
accommodate divergent features from multiple vendors. The concept is similar to the one found in the
Introduction of JEDEC Standard, JESD68 on CFI.
The sequence of issuing RDSFDP instruction is same as FAST_READ: CS# goes low→ send RDSFDP
instruction (5Ah)→send 3 address bytes on SI pin→ send 1 dummy byte on SI pin→ read SFDP code on
SO→ to end RDSFDP operation can use CS# to high at any time during data out.
SFDP is a JEDEC Standard, JESD216B.
Figure 10-56 Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
24-bit address
5AH
23 22 21
3
2
1
0
High - Z
SO
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
DummyByte
SI
7
6
5
4
3
2
1
0
Data Out1
SO
7 6
MSB
5
4
3
Data Out2
2
1
0
7 6
MSB
5
Figure 10-56a Read Serial Flash Discoverable Parameter (RDSFDP) Sequence(QPI)
CS#
0
1
2
3
4
5
6
7
8
9
10 11
12 13
SCLK
IO switch from
input to output
Command
5AH
SI(IO0)
A23-16 A15-8
20 16 12 8
A7-0
4 0
Dummy*
4 0 4
0
4
0
4
SO(IO1)
21 17 13
9
5
1
5
1
5
1
5
1
5
WP#(IO2)
22 18 14 10
6
2
6
2
6
2
6
2
6
HOLD#(IO3)
23 19 15 11
7
3
7
3
7
3
7
3
7
Byte1
Byte2
*“Set Read Parameters” command (C0H)
can set the number of dummy clocks
Puya Semiconductor
Page 83 of 93
P25Q32H Datasheet
Figure 10-57 Serial Flash Discoverable Parameter (SFDP) Table
Table Signature and Parameter Identification Data Values
Description
SFDP Signature
Comment
Fixed:50444653H
Add(H)
DW Add
Data
Data
(Byte)
(Bit)
00H
07:00
53H
53H
01H
15:08
46H
46H
02H
23:16
44H
44H
03H
31:24
50H
50H
SFDP Minor Revision Number
Start from 00H
04H
07:00
00H
00H
SFDP Major Revision Number
Start from 01H
05H
15:08
01H
01H
Number of Parameters Headers
Start from 00H
06H
23:16
01H
01H
07H
31:24
FFH
FFH
08H
07:00
00H
00H
Start from 0x00H
09H
15:08
00H
00H
Start from 0x01H
0AH
23:16
01H
01H
0BH
31:24
09H
09H
0CH
07:00
30H
30H
0DH
15:08
00H
00H
0EH
23:16
00H
00H
0FH
31:24
FFH
FFH
10H
07:00
85H
85H
Start from 0x00H
11H
15:08
00H
00H
Start from 0x01H
12H
23:16
01H
01H
13H
31:24
03H
03H
Unused
Contains 0xFFH and can never be
changed
ID number (JEDEC)
00H: It indicates a JEDEC specified
header
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
How many DWORDs in the
Parameter table
First address of JEDEC Flash
Parameter table
Unused
Contains 0xFFH and can never be
changed
ID Number
It is indicates PUYA
(PUYADevice Manufacturer ID)
manufacturer ID
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
How many DWORDs in the
(in double word)
Parameter table
Parameter Table Pointer (PTP)
First address of PUYA Flash
14H
07:00
60H
60H
Parameter table
15H
15:08
00H
00H
16H
23:16
00H
00H
17H
31:24
FFH
FFH
Unused
Contains 0xFFH and can never be
changed
Puya Semiconductor
Page 84 of 93
P25Q32H Datasheet
Table
Parameter Table (0): JEDEC Flash Parameter Tables
Description
Comment
Add(H)
(Byte)
DW Add
Data
Data
(Bit
)
00: Reserved; 01: 4KB erase;
Block/Sector Erase Size
10: Reserved;
01:00
01b
02
1b
03
0b
11: not support 4KB erase
Write Granularity
Write Enable Instruction
Requested for Writing to Volatile
Status Registers
0: 1Byte, 1: 64Byte or larger
0: Nonvolatile status bit
1: Volatile status bit
(BP status register bit)
30H
E5H
0: Use 50H Opcode,
Write Enable Opcode Select for
Writing to Volatile Status Registers
1: Use 06H Opcode,
Note: If target flash status register is
04
0b
07:05
111b
15:08
20H
16
1b
18:17
00b
19
0b
Nonvolatile, then bits3 and 4 must
be set to 00b.
Unused
Contains 111b and can never be
changed
4KB Erase Opcode
(1-1- 2) Fast Read
31H
0=Not support, 1=Support
Address Bytes Number used in
00: 3Byte only, 01: 3 or 4Byte,
addressing flash array
10: 4Byte only, 11: Reserved
Double Transfer Rate (DTR)
clocking
0=Not support, 1=Support
32H
F1H
(1-2- 2) Fast Read
0=Not support, 1=Support
20
1b
(1-4- 4) Fast Read
0=Not support, 1=Support
21
1b
(1-1- 4) Fast Read
0=Not support, 1=Support
22
1b
23
1b
33H
31:24
FFH
37H:34H
31:00
Unused
Unused
Flash Memory Density
(1-4- 4) Fast Read Number of Wait
states
0 0000b: Wait states (Dummy
04:00
Clocks) not support
Mode Bits
000b:Mode Bits not support
(1-4- 4) Fast Read Opcode
(1-1- 4) Fast Read Number of Wait
states
39H
0 0000b: Wait states (Dummy
Clocks) not support
00100b
44H
07:05
010b
15:08
EBH
20:16
01000b
3AH
(1-1- 4) Fast Read Number of
Mode Bits
(1-1- 4) Fast Read Opcode
Puya Semiconductor
000b:Mode Bits not support
3BH
FFH
007FFFFFH
38H
(1-4- 4) Fast Read Number of
20H
EBH
08H
23:21
000b
31:24
6BH
6BH
Page 85 of 93
P25Q32H Datasheet
Description
Comment
(1-1- 2) Fast Read Number of Wait
0 0000b: Wait states (Dummy
states
Clocks) not support
Add(H)
DW Add
(Byte)
(Bit)
04:00
Data
01000b
3CH
(1-1- 2) Fast Read Number
of Mode Bits
000b: Mode Bits not support
(1-1- 2) Fast Read Opcode
(1-2- 2) Fast Read Number
of Wait states
3DH
0 0000b: Wait states (Dummy
Clocks) not support
08H
07:05
000b
15:08
3BH
20:16
00000b
3EH
(1-2- 2) Fast Read Number
of Mode Bits
000b: Mode Bits not support
(1-2- 2) Fast Read Opcode
(2-2- 2) Fast Read
3FH
0=not support 1=support
Unused
0=not support 1=support
Unused
3BH
80H
23:21
100b
31:24
BBH
00
0b
03:01
111b
04
0b
07:05
111b
40H
(4-4- 4) Fast Read
Data
BBH
EEH
Unused
43H:41H
31:08
0xFFH
0xFFH
Unused
45H:44H
15:00
0xFFH
0xFFH
20:16
00000b
23:21
000b
47H
31:24
FFH
FFH
49H:48H
15:00
0xFFH
0xFFH
20:16
00000b
(2-2- 2) Fast Read Number
of Wait states
(2-2- 2) Fast Read Number
of Mode Bits
0 0000b: Wait states (Dummy
Clocks) not support
46H
000b: Mode Bits not support
(2-2- 2) Fast Read Opcode
Unused
(4-4- 4) Fast Read Number of Wait
0 0000b: Wait states (Dummy
states
Clocks) not support
(4-4- 4) Fast Read Number
of Mode Bits
Sector Type 1 Size
Sector/block size=2^N bytes
0x00b: this sector type don’t exist
Sector Type 1 erase Opcode
Sector Type 2 Size
Sector/block size=2^N bytes
0x00b: this sector type don’t exist
Sector Type 2 erase Opcode
Sector Type 3 Size
Sector/block size=2^N bytes
0x00b: this sector type don’t exist
Sector Type 3 erase Opcode
Sector Type 4 Size
Sector Type 4 erase Opcode
Puya Semiconductor
Sector/block size=2^N bytes
0x00b: this sector type don’t exist
00H
4AH
000b: Mode Bits not support
(4-4- 4) Fast Read Opcode
00H
23:21
000b
4BH
31:24
FFH
FFH
4CH
07:00
0CH
0CH
4DH
15:08
20H
20H
4EH
23:16
0FH
0FH
4FH
31:24
52H
52H
50H
07:00
10H
10H
51H
15:08
D8H
D8H
52H
23:16
08H
08H
53H
31:24
81H
81H
Page 86 of 93
P25Q32H Datasheet
Table Parameter Table (1): PUYA Flash Parameter Tables
Description
Comment
Add(H)
DW Add
(Byte)
(Bit)
61H:60H
63H:62H
Data
Data
15:00
3600H
3600H
31:16
1650H
2300
2000H=2.000V
Vcc Supply Maximum Voltage
2700H=2.700V
3600H=3.600V
1650H=1.650V
Vcc Supply Minimum Voltage
2250H=2.250V
2350H=2.350V
2700H=2.700V
HW Reset# pin
0=not support 1=support
00
0b
HW Hold# pin
0=not support 1=support
01
1b
0=not support 1=support
02
1b
0=not support 1=support
03
1b
Deep Power Down Mode
SW Reset
SW Reset Opcode
Should be issue Reset Enable(66H)
before Reset cmd.
65H:64H
11:04
1001 1001b
(99H)
F99EH
Program Suspend/Resume
0=not support 1=support
12
1b
Erase Suspend/Resume
0=not support 1=support
13
1b
14
1b
15
1b
66H
23:16
77H
77H
67H
31:24
64H
64H
00
0b
01
0b
09:02
FFH
10
0b
Unused
Wrap Around Read mode
0=not support 1=support
Wrap - Around Read mode Opcode
08H:support 8B wrap
- around read
Wrap - Around Read data length
16H:8B&16B
32H:8B&16B&32B
64H:8B&16B&32B&64B
Individual block lock
Individual block lock bit
(Volatile/Nonvolatile)
0=not support 1=support
0=Volatile
1=Nonvolatile
Individual block lock Opcode
Individual blocklock Volatile
protect bit default protect status
0=protect 1=unprotect
CBFCH
6BH:68H
Secured OTP
0=not support 1=support
11
1b
Read Lock
0=not support 1=support
12
0b
Permanent Lock
0=not support
1=support
13
0b
Unused
15:14
11b
Unused
31:16
FFFFH
Puya Semiconductor
FFFFH
Page 87 of 93
P25Q32H Datasheet
11 Ordering Information
P 25 Q 32 H A –SS H– I T
Company Designator
P = Puya Semiconductor
Product Family
25 = SPI interface flash
Product Serial
Q = Q serial
Memory Density
32 = 32M bit
Operation Voltage
H = 2.3 V ~ 3.6 V
Generation
A = A Version
Default = blank
Package Type
SS = SOP8 150mil
SU = SOP8 208mil
WX= WSON8 6X5 mm
TS = TSSOP8
WF = WAFER
Plating Technology
H : RoHS Compliant, Halogen-free, Antimony- free
Device Grade
I = - 40 ~ 85C
K = - 40 ~ 105C
Packing Type
T = TUBE
R = TAPE & REEL
W = WAFER
Puya Semiconductor
Page 88 of 93
P25Q32H Datasheet
12 Package Information
12.1 8-Lead SOP(150mil)
h x45°
A2
A
b
e
C
D
8
0.25mm
GAUGE PLANE
E1
E
A1
k
1
L
L1
Common Dimensions
(Unit of Measure=millimeters)
Symbol
A
Min
Typ
Max
-
-
1.750
A1
0.100
-
0.250
A2
1.250
-
-
b
0.280
-
0.480
c
0.170
-
0.230
D
4.800
4.900
5.000
E
5.800
6.000
6.200
E1
3.800
3.900
4.000
e
-
1.270
-
h
0.250
-
0.500
k
0°
-
8°
L
0.400
-
1.270
L1
-
1.040
-
Note：1. Dimensions are not to scale
TITLE
DRAWING NO.
REV
SP-8
A
8-lead SOP
Puya Semiconductor
Page 89 of 93
P25Q32H Datasheet
12.2 8-Lead SOP(208mil)
A2
A
b
e
C
D
8
0.25mm
GAUGE PLANE
E1
E
A1
k
1
L
Common Dimensions
(Unit of Measure=millimeters)
Symbol
Min
Typ
A
-
-
2.150
A1
0.050
-
0.250
A2
1.700
-
1.900
b
0.350
-
0.500
c
0.100
-
0.250
D
5.130
-
5.330
E
7.700
E1
5.180
e
-
Max
8.100
5.380
1.270
-
k
0°
-
8°
L
0.500
-
0.850
Note：1. Dimensions are not to scale
TITLE
DRAWING NO.
REV
SP-8
A
8-lead SOP(200mil)
Puya Semiconductor
Page 90 of 93
P25Q32H Datasheet
12.3 8-Lead TSSOP
D
8
5
C
E
E1
1
4
A
A1
A2
b
e
CP
α
L
L1
Common Dimensions
(Unit of Measure=millimeters)
Symbol
A
Min
Typ
Max
-
-
1.200
A1
0.050
-
0.150
A2
0.800
1.000
1.050
b
0.190
-
0.300
c
0.090
-
0.200
-
0.100
CP
D
e
2.900
-
3.000
0.650
3.100
-
E
6.200
6.400
6.600
E1
4.300
4.400
4.500
L
0.450
0.600
0.750
L1
-
α
0°
1.000
-
8°
Note：1. Dimensions are not to scale
TITLE
8-lead TSSOP
Puya Semiconductor
DRAWING NO.
REV
TS-8
A
Page 91 of 93
P25Q32H Datasheet
12.4 8-Land WSON(6x5mm)
D
e
L
b
h
Pin1
h
E
E2
D2
A
A1
c
Common Dimensions
(Unit of Measure=millimeters)
Symbol
Min
Typ
Max
A
0.700
0.750
0.800
A1
0.000
0.020
0.050
b
0.350
0.400
0.450
D
4.900
5.000
5.100
D2(rev MC)
-
1.500
-
E
5.900
6.000
6.100
E2(rev MC)
4.000
4.100
4.200
e
-
1.270
-
L
0.450
0.500
0.550
h
0.300
0.350
0.400
c
0.180
0.203
0.250
Note：1. Dimensions are not to scale
TITLE
DRAWING NO.
REV
DN-8
A
DFN8(0506X0.75-1.27)
Puya Semiconductor
Page 92 of 93
P25Q32H Datasheet
13 Revision History
Rev.
Date
Initial
2017-03-01
Preliminary datasheet
Cyx
0.2
2017-08-15
P34 8bit or 16bit boundary check change to 8bit boundary
check
Cyx
2017-12-01
P9 Isb typ change to 10uA
P9 Idp Max change to 3uA
P10 fQ Max(4IO read) change to 104MHz
P11 tPE/tSE/tBE/tCE Typ change to 10mS,Max change to
15mS
P32 fill in the drive strength table
Cyx
0.3
Description
Author
Puya Semiconductor Co., Ltd.
IMPORTANT NOTICE
Puya Semiconductor reserves the right to make changes without further notice to any
products or specifications herein. Puya Semiconductor does not assume any responsibility
for use of any its products for any particular purpose, nor does Puya Semiconductor
assume
any liability arising out of the application or use of any its products or circuits.
Puya
Puya Semiconductor
Page 93
of 93
Semiconductor does not convey any license under its patent rights or other rights nor the
rights of others.
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