MEM2302XG-N

MEM2301XG-N P-Channel MOSFET MEM2301XG-N General Description Features MEM2301XG-N Series P-channel enhancement  -20V/-2.8A mode field-effect transistor , These miniature surface RDS(ON), Vgs@-1.8V, Ids@-1.1A = 230mΩ mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@-2.5V, Ids@-2.0A = 140mΩ Low RDS(ON) assures minimal power loss and RDS(ON), Vgs@-4.5V, Ids@-3.1A = 96mΩ conserves energy, making this device ideal for use in  High Density Cell Design For Ultra Low On-Resistance power management circuitry. Typical applications  Fast switching speed are lower voltage application, power management in  High performance trench technology portable and battery-powered products such as  Low thermal impedance copper lead frame computers, printers, and PCMCIA cards, cellular and  Subminiature surface mount package:SOT23 cordless telephones. Pin Configuration Typical Application  Power management  Load switch  Battery protection Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current ID -2.8 A Pulsed Drain Current1,2 IDM -17 A Total Power Dissipation TA=25℃ TA=70℃ PD 1.4 0.8 W Operating Temperature Range TOpr -55~150 ℃ Storage Temperature Range Tstg -55~150 ℃ Symbol MAX. Unit RθJA 90 ℃/W Thermal Characteristics Parameter 3 Thermal Resistance,Junction-to-Ambient V02 www.microne.com.cn 1 MEM2301XG-N Electrical Characteristics Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250μA -20 -23 - V Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA -0.4 -0.72 -1.1 V Gate-Body Leakage IGSS VDS=0V，VGS=12V - - 100 nA VDS=0V，VGS=-12V - - -100 nA VDS=-20V VGS=0V TJ=25℃ - - -1.0 μA VDS=-16V VGS=0V TJ=55℃ - - -10 μA RDS(ON)1 VGS=-1.8V,ID=-1.1A - 230 260 mΩ RDS(ON)2 VGS=-2.5V,ID=-2.0A - 140 170 mΩ RDS(ON)3 VGS=-4.5V,ID=-2.8A - 98 130 mΩ Forward Transconductance gFS VDS=-5V,ID=-1A 3 5 - S Max. Diode Forward Current IS - - -2.8 A Source-drain (diode forward) voltage VSD - -0.82 -1.2 V - 320 - - 60 - - 35 - - 11 - - 5 - - 22 - - 8 - 3.2 - 0.6 - 0.9 - Zero Gate Voltage Drain Current Static Drain-Source On-Resistance IDSS VGS=0V,IS=-2.8A Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -10V, VGS = 0 V, f = 1 MHz pF Switching Characteristics Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall-Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -10 V, ID= -2.8 A, VGS = -4.5 V, Rg = 6 Ω VDS = -10 V, VGS = -4.5 V, ID = -2.0A - ns nc 1、Pulse width limited by maximum junction temperature. 2、Pulse test: PW ≤300 μs duty cycle ≤2%. 3、Surface Mounted on FR4 Board, t ≤ 5 sec. V02 www.microne.com.cn 2 MEM2301XG-N Typical Performance Characteristics V02 www.microne.com.cn 3 MEM2301XG-N V02 www.microne.com.cn 4 MEM2301XG-N Package Information Package Type:SOT23 Unit:mm(inch) Millimeters Inches DIM V02 Min Max Min Max A 2.7 3.1 0.1063 0.122 B 1.7 2.1 0.0669 0.0827 b 0.35 0.5 0.0138 0.0197 C 1.0 1.2 0.0394 0.0472 c 0.1 0.25 0.0039 0.0098 d 0.2 - 0.0079 - E 2.1 2.64 0.0827 0.1039 e 1.2 1.4 0.0472 0.0551 www.microne.com.cn 5 MEM2301XG-N      V02 The information described herein is subject to change without notice. Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Nanjing Micro One Electronics Inc is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro One Electronics Inc. Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. www.microne.com.cn 6