Rev. A0
microSD3.0 UHS-I SPEC
Lexar microSD3.0
UHS-I Specification
Revision History:
Rev.
Date
Changes
A0
2018/07
Initial release
Remark
NOTE: INFORMATION IN THIS PRODUCT SPECIFICATION IS SUBJECT TO CHANGE AT ANYTIME
WITHOUT NOTICE, ALL PRODUCT SPECIFICATIONS ARE PROVIDED FOR REFERENCE ONLY.TO
ANY INTELLECTUAL, PROPERTY RIGHTS IN LEXAR CO.,LTD. ALL INFORMATION IN THIS
DOCUMENT IS PROVIDED.
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Page 1
Lexar Co., Limited
Rev. A0
microSD3.0 UHS-I SPEC
Contents
1. Overview ................................................................................................................ 3
1.1 Product Description ............................................................................................ 3
1.2 Features Summary ............................................................................................. 3
2. Pin Assignment ....................................................................................................... 4
3. Product List ............................................................................................................ 5
4. Current Consumption .............................................................................................. 6
5. Reliability and Durability ........................................................................................ 7
6. SD Card Registers ................................................................................................... 8
6.1 Card Identification Register (CID) ........................................................................ 8
6.2 Card Specific Data Register (CSD) ........................................................................ 8
7. Bus Operation Conditions ..................................................................................... 10
7.1 For 3.3V Signaling ............................................................................................ 10
7.1.1 Threshold Level for High Voltage Range........................................................... 10
7.1.2 Peak Voltage and Leakage Current ................................................................. 10
7.1.3 Bus Signal Line Load..................................................................................... 10
7.1.4 Bus Signal Levels ......................................................................................... 11
7.1.5 Bus Timing(Default) ..................................................................................... 11
7.1.6 Bus Timing(High-Speed Mode) ....................................................................... 13
7.2 For 1.8V Signaling ............................................................................................ 14
7.2.1Threshold Level for High Voltage Range ........................................................... 14
7.2.2 Peak Voltage and Leakage Current ................................................................. 14
7.2.3 Bus Timing Specification in SDR12, SDR25, SDR50 and SDR104 Modes .............. 14
7.2.3.1 Clock Timing ........................................................................................... 14
7.2.3.2 Card Input Timing .................................................................................... 15
7.2.3.3 Card Output Timing .................................................................................. 16
7.2.3.3.1 Output Timing of Fixed Data Window (SDR12, SDR25 and SDR50) .............. 16
7.2.3.3.2 Output Timing of Variable Window (SDR104) ............................................ 16
8. Physical Dimension............................................................................................... 17
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Lexar Co., Limited
Rev. A0
microSD3.0 UHS-I SPEC
1. Overview
1.1 Product Description
The microSD3.0 Cards are fully compatible with Physical Layer Specification, Version 3.0 (this
specification is available from the SDA), support Ultra High Speed(UHS), provides high write/read
speed and high IOPS, It was designed to meet the security, high capacity, high performance and
environmental requirements inherent in next generation consumer electronic devices.
The SD card system is a new mass-storage system based on innovations in semiconductor
technology. It has been developed to provide an inexpensive, mechanically robust storage
medium in card form for multimedia consumer applications. SD card allows the design of
inexpensive players and drivers without moving parts. A low power consumption and a wide
supply voltage range favors consumer electronic devices.
Ultra High Speed (UHS) Card
It provides up to 104MB/s* performance. UHS cards are backward compatible on non-UHS hosts.
*Based on internal testing; performance may vary depending upon host device.
1 megabyte(MB)=1,000,000bytes.
1.2 Features Summary
-Capacity: 8GB/16GB/32GB/64GB
-Complies to SD specifications version 3.00
-Voltage operating: 2.7~3.6V.
-Targeted for portable and stationary applications
-Greater Performance Choices
-Bus Speed Mode:
DS-Default Speed mode: 3.3V signaling, frequency up to 25MHz, up to 12.5MB/sec
HS-High Speed mode: 3.3V signaling, frequency up to 50MHz, up to 25MB/sec
SDR12-1.8V signaling, frequency up to 25MHz, up to 12.5MB/sec
SDR25-1.8V signaling, frequency up to 50MHz, up to 25MB/sec
SDR50-1.8V signaling, frequency up to 100MHz, up to 50MB/sec
SDR104-1.8V signaling, frequency up to 208MHz, up to 104MB/sec
DDR50-1.8V signaling, frequency up to 50MHz, sampled on both clock edges, up to 50MB/s
-Switch function command supports Bus Speed Mode, Command System, Drive Strength, and
future functions.
-password protection (CMD42-LOCK_UNLOCK)
-Sophisticated system for error recovery including a powerful ECC
-Global Wear Leveling
-Power management for low power operation
-Add TF card adapter can be used in SD card socket
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Lexar Co., Limited
Rev. A0
microSD3.0 UHS-I SPEC
2. Pin Assignment
SD Mode
Pin
No.
Name
Type
1
Dat2
I/O/PP
2
CD/DAT3
I/O/PP
3
CMD
PP
4
VDD
S
5
CLK
I
6
VSS
S
7
DAT0
I/O/PP
8
DAT1
I/O/PP
SPI Mode
Description
Data Line [Bit 2]
Card Detect /
Name
Type
RSV
Description
Reserved
CS
I
Chip Select
DI
I
Data In
Supply voltage
VDD
S
Supply voltage
Clock
SCLK
I
Clock
VSS
S
Supply voltage ground
Data Line [Bit 0]
DO
O/PP
Data Line [Bit 1]
RSV
Data Line [Bit 3]
Command/Resp
onse
Supply voltage
ground
Data Out
Reserved
S: power supply; I: input; O: output; PP: I/O using push-pull drivers
Table 1: Pin Assignment
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Lexar Co., Limited
Rev. A0
microSD3.0 UHS-I SPEC
3. Product List
Product
Commercial
Lexar P/N
Capacity
Actual Size
(byte)
Speed
Write/Read
Class
Speed
(Note1)
(Note1)
UHS-I
(Note1)
Type
LCSDM-D1P01-8G
8GB
7,816,840,479
10/90MB/s
SDR104
SDHC
LCSDM-D1D02-16G
16GB
15,633,680,957
20/90MB/s
SDR104
SDHC
LCSDM-D1D03-32G
32GB
31,267,361,915
20/90MB/s
SDR104
SDHC
LCSDM-D1D03-64G
64GB
62,534,723,830
30/90MB/s
SDR104
SDXC
microSD
3.0
Table 2:Product List
Note1:*Measurement based on VTE3100 TestMetrix device, SW 3.2A software or up version,
test script:
SD_Card(Spec3.0_High&Extended-Capacity_UHS-I and Non-UHS-I)_Compliance [rev31R].vte
SDR104@SDR104-208MHz.
SD_Card (Spec2.0-3.0 High&Extended-Capacity_UHS-I) Performance-Speed (Multiple Block
Sequential) [rev31M] - SDR104-With Background Data.vte]
*Maximum speed differs from the bus I/F speed. It varies depending upon the card performance. The
average speed that a device writes to an SD memory card may vary depending upon the device and the
operation it is performing. Normal and high-speed cards can also be used with UHS-I host devices, but the
high performance enabled by a UHS-I host device can only be achieved with a UHS-I memory card
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Lexar Co., Limited
Rev. A0
microSD3.0 UHS-I SPEC
4. Current Consumption
Standby current: 500uA(Maximum value)
Standby current: 250uA(average value)
Operating current: 250mA(Maximum value)
Operating current: 150mA(average value)
*Test condition: Realtek5308 card reader (Voltage 3.3V), Fluke289C multi-meter.
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Lexar Co., Limited
Rev. A0
microSD3.0 UHS-I SPEC
5. Reliability, Durability and Endurance
Temperature
Moisture and
corrosion
Operation: 0°C/70°C
Storage: -25°C/85°C
Operation: 25°C/95% rel. humidity
Storage: 40°C/93% rel. hum./500h
Salt Water Spray: 3% NaCl/35C; 24h acc. MIL STD Method 1009
Durability
10,000 mating cycles;
Bending
10[N] Center 200[mm/minute] 60[sec]
Torque
0.15Nm,+/-2.5 deg.max.
Drop test
TBW(Terabytes
1.5m free fall
IEC 61000-4-2 contact discharge: +/- 2[kV] and +/- 4[kV] 150[pF],330
[Ohm]
air discharge: up to +/- 15[kV] 150[pF], 330[Ohm]
8GB: 3.5TB
Written)
16GB: 7TB
Electrostatic
Discharge (ESD)
32GB: 14TB
64GB: 28TB
Table 3: Reliability and Durability
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Lexar Co., Limited
Rev. A0
microSD3.0 UHS-I SPEC
6. SD Card Registers
6.1 Card Identification Register (CID)
The Card Identification (CID) register is 128 bit wide. It contains the card identification
information used during the card identification phase. Every individual flash card shall have a
unique identification number.
The structure of the CID register is defined in the following table.
CID Bit
Width
Name
Field
[127:120]
8
Manufacture ID
MID
[119:104]
16
OEM/Application ID
OID
[103:64]
40
Product Name
PNM
[63:56]
8
Product Revision
PRV
[55:24]
32
Product Serial Number
PSN
[23:20]
4
Reserved
---
[19:8]
12
Manufacturing Date
MDT
[7:1]
7
CRC7 check sum
CRC
[0]
1
Not used,always”1
---
Table 4: SD Card CID Table
-
All contents in the CID table are programmable; Manufacturers can update the CID data
through utility.
-
Manufacturers should license MID and OID field form the SD Card Association(SDA)
6.2 Card Specific Data Register (CSD)
The Card-Specific Data register provides information on how to access the card contents. The
defines the data format, error correction type, maximum data access time, data transfer speed,
whether the DSR register can be used etc. The programmable part of the register can be can be
changed by CMD27.The CSD Table Version 2.0(as shown below) is applied to SDHC and SDXC
Cards. Note that bits [15:0] are programmable by the host side. Refer to the SD specification for
detailed information
CSD Bit
Width
Name
Field
Value
[127:126]
2
CSD structure
CSD_STRUCTURE
01b
[125:120]
6
Reserved
---
---
[119:112]
8
Data read access-time 1
(TAAC)
0E h
[111:104]
8
(NSAC)
00 h
Data read access-time2 in
CLK cycles(NSA*100)
Note
V2.0(>2G
B Card)
---
32 h
[103:96]
8
Max data transfer rate
(TRAN_SPEED)
5A h
0B h
2B h
[95:84]
12
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Card command classes
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CCC
5B5 h
Lexar Co., Limited
Rev. A0
microSD3.0 UHS-I SPEC
[83:80]
4
Max. read data block length
(READ_BL_LEN)
9h
[79]
1
Partial block read allowed
(READ_BL_PARTIAL)
0
[78]
1
Write block misalignment
[77]
1
Read block misalignment
(READ_BLK_MISALIGN)
0
[76]
1
DSR implemented
DSR_IMP
x
[75:70]
6
Reserve
---
---
[69:48]
22
Device size
C_SIZE
xxxxxxh
[47]
1
Reserved
---
0
[46]
1
Erase single block enable
(ERASE_BLK_EN)
1
[45:39]
7
Erase sector size
(SECTOR_SIZE)
7F h
[38:32]
7
Write protect group size
C_SIZE
0b
[31]
1
Write protect group enable
---
0
[30:29]
2
Reserved
(ERASE_BLK_EN)
0b
[28:26]
3
Write speed factor
(SECTOR_SIZE)
010 b
[25:22]
4
Max. write data block length
(WP_GRP_SIZE)
9h
[21]
1
Partial block write allowed
(WP_GRP_ENABLE)
0
[20:16]
5
Reserved
---
---
[15]
1
File format group
(FILE_FORMAT_GRP)
0
[14]
1
Copy flag
COPY
x
[13]
1
Permanent write protection
PERM_WRITE_PROTECT
x
[12]
1
Temporary write protection
TMP_WRITE_PROTECT
x
[11:10]
2
File format
(FILE_FORMAT)
00 b
[9:8]
2
Reserved
---
00 b
[7:1]
7
CRC
CRC
---
[0]
1
Not used,always’1’
---
1
(WRITE_BLK_MISALIGN
)
512 Byte
0
Table 5: CSD (Version 2.0) Table
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Lexar Co., Limited
Rev. A0
microSD3.0 UHS-I SPEC
7. Bus Operation Conditions
7.1 For 3.3V Signaling
7.1.1 Threshold Level for High Voltage Range
Parameter
Symbol
Min
Max
Supply Voltage
VDD
2.7
3.6
Output High Voltage
VOH
0.75* VDD
Output Low Voltage
VOL
Input High Voltage
VIH
Input Low Voltage
VIL
Unit
Remark
V
V
IOH=2mA VDD min
0.125* VDD
V
IOL=2mA VDD min
0.625* VDD
Vss+0.3
V
Vss-0.3
0.25* VDD
V
250
ms
Power Up Time
From 0V to VDD min
Table 6: Threshold Level for High Voltage
7.1.2 Peak Voltage and Leakage Current
Parameter
Symbol
Peak voltage on all lines
Min
Max
Unit
-0.3
VDD+0.3
V
-10
10
uA
-10
10
uA
Remark
All Inputs
Input Leakage Current
All Outputs
Output Leakage Current
Table 7: Peak Voltage and Leakage Current
7.1.3 Bus Signal Line Load
Parameter
Symbol
Min
Max
Unit
Remark
Pull-up resistance
RCMD
10
100
KΏ
To prevent bus floating
40
pF
1 card CHOST+CBUS shall not
RDAT
Total bus capacitance for
CL
each signal line
Card capacitance for
exceed 30pF
CCARD
10
pF
16
nH
90
KΏ
5
uF
each signal pin
Maximum signal
inductance
Pull-up resistance inside
card(pin1)
Capacity Connected to
Power Line
RDAT3
10
CC
May be used for card detection
To prevent inrush current
Table 8: Bus Operating Conditions - Signal Line's Load
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Lexar Co., Limited
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microSD3.0 UHS-I SPEC
7.1.4 Bus Signal Levels
As the bus can be supplied with a variable supply voltage,all sigelnal levels are related to the
supply valtage.
Figure 1: Bus Signal Levels
To meet the requirements of the the JEDEC specification JESD8-1A and JESD8-7,the card input
and output voltages shall be within the specifide ranges shown in Table 6-2 for any VDD of the
allowed valtage range:
7.1.5 Bus Timing(Default)
Figure 2: Card input Timing(Default Speed Card)
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Figure 3: Card Output Timing(Default Speed Mode)
Parameter
Symbo
Min.
Max
Unit
l
Clock CLK (All values are referred to min(VIH)and max(VIL)
)
Remark
Clock frequency data transfer
fpp
0
25
MHz
CCARD ≤ 10pF (1 card)
Mode
Clock frequency Identification
fOD
0(1)/100
400
KHz
CCARD ≤ 10pF (1 card)
Mode
Clock low time
tWL
10
ns
CCARD ≤ 10pF (1 card)
Clock high time
tWH
10
ns
CCARD ≤ 10pF (1 card)
Clock rise time
tTLH
10
ns
CCARD ≤ 10pF (1 card)
Clock fall time
tTHL
10
ns
CCARD ≤ 10pF (1 card)
Inputs CMD, DAT (referenced to CLK)
Input set-up time
tISU
5
ns
CCARD ≤ 10pF (1 card)
Input hold time
tIH
5
ns
CCARD ≤ 10pF (1 card)
Outputs CMD, DAT (referenced to CLK)
Output Delay time during Data
Transfer Mode
Output Hold time
tODLY
0
14
ns
CL ≤ 40pF (1 card)
tOH
0
50
ns
CL ≤ 40pF (1 card)
(1) 0 Hz means to stop the clock.The given minimum frequency range is for cases were continues
clock is required (refer to Chapter 4.4-Clock Control)
Table 9: Bus Timing-Parameters Values (Default Speed)
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7.1.6 Bus Timing(High-Speed Mode)
Figure 4:Card Input Timing(High Speed Card)
Figure 5: Card Output Timing(High Speed Mode)
Parameter
Symbo
Min.
Max
Unit
Remark
l
Clock CLK (All values are referred to min(VIH)and max(VIL)
)
Clock frequency data transfer
fpp
0
Mode
Clock low time
tWL
Clock high time
tWH
Clock rise time
tTLH
Clock fall time
tTHL
50
MHz
CCARD ≤ 10pF (1 card)
7
ns
CCARD ≤ 10pF (1 card)
7
ns
CCARD ≤ 10pF (1 card)
3
ns
CCARD ≤ 10pF (1 card)
3
ns
CCARD ≤ 10pF (1 card)
Inputs CMD, DAT (referenced to CLK)
Input set-up time
tISU
6
ns
CCARD ≤ 10pF (1 card)
Input hold time
tTH
2
ns
CCARD ≤ 10pF (1 card)
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Lexar Co., Limited
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microSD3.0 UHS-I SPEC
Outputs CMD, DAT (referenced to CLK)
Output Delay time during Data
Transfer Mode
Output Hold time
tODLY
14
tOH
Total System capacitance for
2.5
CL
each line1
40
ns
CL ≤ 40pF (1 card)
ns
CL ≥ 15pF (1 card)
pF
1 card
1) In order to satisty sever timing , host shall drive only one card.
Table 10 :Bus Tinming – Parameters Values(High Speed)
7.2 For 1.8V Signaling
7.2.1Threshold Level for High Voltage Range
Parameter
Symbol
Min
Max
Unit
Remark
Supply Voltage
VDD
2.7
3.6
V
Regulator Voltage
VDDIO
1.7
1.95
V
Generated by VDD
Output High Voltage
VOH
1.4
V
IOH=2mA VDD min
Output Low Voltage
VOL
0.45
V
IOL=2mA VDD min
Input High Voltage
VIH
1.27
2.0
V
Input Low Voltage
VIL
Vss-0.3
0.58
V
Table 11: Threshold Level for High Voltage
7.2.2 Peak Voltage and Leakage Current
Parameter
Symbol
Input Leakage Current
Min
-2
Max
2
Unit
uA
Remark
DAT3 pull-up is
disconnected
Table 12: Peak Voltage and Leakage Current
7.2.3 Bus Timing Specification in SDR12, SDR25, SDR50 and SDR104 Modes
7.2.3.1 Clock Timing
Figure 6: Clock Singnal Timing
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Rev. A0
microSD3.0 UHS-I SPEC
Symbol
tCLK
tCR, tCF
Clock Duty
Min
Max
Unit
4.8
-
ns
-
0.2* tCLK
ns
30
70
%
Remark
208MHz
(Max.),
Between
rising
edge,
VCT=0.975V
tCR, tCF < 2.00ns (max.) at 208MHz,
CCARD=10pF
tCR, tCF < 2.00ns (max.) at 100MHz,
CCARD=10pF
The absolute maximum value of tCR, tCF is
10ns regardless of clock frequence.
Table 13: Clock Signal Timing
7.2.3.2 Card Input Timing
Figure 7: Card Input Timing
Symbol
Min
Max
Unit
SDR104 mode
tIS
1.40
-
ns
CCARD = 10pF, VCT = 0.975V
tIH
0.80
ns
CCARD = 5pF, VCT = 0.975V
Symbol
Min
Max
Unit
tIS
3.00
-
ns
CCARD = 10pF, VCT = 0.975V
tIH
0.80
-
ns
CCARD = 5pF, VCT = 0.975V
SDR12, SDR25 and SDR50 modes
Table 14: SDR50 and SDR104 Input Timing
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7.2.3.3 Card Output Timing
7.2.3.3.1 Output Timing of Fixed Data Window (SDR12, SDR25 and SDR50)
Figure 8: Output Timing of Fixed Data Window
Symbol
Min
Max
Unit
tODLY
-
7.5
ns
14
ns
-
ns
tODLY
tOH
1.5
Remark
tCLK ≥10.0ns, CL=30pF, using driver Type B,
for SDR50.
tCLK ≥20.0ns, CL=40pF, using driver Type B,
for SDR25 and SDR12.
Hold time at the tODLY (min.). CL=15pF
Table 15: Output Timing of Fixed Data Window
7.2.3.3.2 Output Timing of Variable Window (SDR104)
Figure 9: Output Timing of Variable Data Window
Symbol
Min
Max
Unit
Remark
tOP
-
2
UI
Card Output Phase
△tOP
-350
+1550
ps
Delay variation due to temperature change
after tuning
tODW
0.60
-
UI
tODW = 2.88ns at 208MHz
Table 16: Output Timing of Variable Data Window
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8. Physical Dimension
Type
Measurement
Length
15mm 24mm
+/- 0.1mm(B)
+/- 0.1mm
Width
11mm +/- 0.1mm(A)
Thickness
1.0mm+/-0.1mm(C)
0.7mm+/-0.1mm(C1)
Weight
0.33 gram Max
Table 17: Physical Dimension Specifications (Unit in mm)
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Mechanical form factor as follows: (Unit in mm)
Figure 10: Dimension Drawing
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