ES1D

ES1A – ES1J Taiwan Semiconductor 1A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Super fast recovery time for high efficiency Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 1 A VRRM 50 - 600 V IFSM 30 A TJ MAX 150 °C APPLICATIONS ● ● ● ● ● DC to DC converter Switching mode converters and inverters Lighting application Snubber Freewheeling application Package DO-214AC (SMA) Configuration Single die MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J UNIT Marking code on the device ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J Repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Reverse voltage, total rms value VR(RMS) 35 70 105 140 210 280 350 420 V Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature IF 1 A IFSM 30 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: O2112 ES1A – ES1J Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 35 °C/W Junction-to-ambient thermal resistance RӨJA 85 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J (1) Reverse current @ rated VR TJ = 25°C (2) Junction capacitance IF = 1A, TJ = 25°C Reverse recovery time 1MHz, VR = 4.0V IF = 0.5A, IR = 1.0A, Irr = 0.25A TYP MAX UNIT - 0.95 V - 1.30 V - 1.70 V - 5 µA - 100 µA 16 - pF 18 - pF - 35 ns VF IR TJ = 125°C ES1A ES1B ES1C ES1D ES1F ES1G ES1H ES1J SYMBOL CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING ES1x DO-214AC (SMA) 7,500 / Tape & Reel Notes: 1. “x” defines voltage from 50V(ES1A) to 600V(ES1J) 2 Version: O2112 ES1A – ES1J Taiwan Semiconductor CHARACTERISTICS CURVES Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 ES1F-ES1J CAPACITANCE (pF) 1 0 ES1A-ES1D 10 f=1.0MHz Vsig=50mVp-p 1 25 50 75 100 125 150 0.1 1 LEAD TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) 1 TJ=125°C 0.1 TJ=75°C 0.01 TJ=25°C 0.001 30 40 50 60 70 80 90 100 10 10 ES1A-ES1D UF1DLW 1 ES1F-ES1G TJ=125°C 1 TJ=25°C 0.1 ES1H-ES1J 0.01 0.1 0.001 0.6 Pulse width 300μs 1% duty cycle Pulse width 0.8 1.0 1.2 1.4 1.6 0.3 0.4 0.5 0.6 0.7 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1.8 0.9 2.0 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 40 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics 10 20 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) AVERAGE FORWARD CURRENT (A) 2 8.3ms single half sine wave 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: O2112 1.2 ES1A – ES1J Taiwan Semiconductor (TA = 25°C unless otherwise noted) CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: O2112 ES1A – ES1J Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: O2112 ES1A – ES1J Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 6 Version: O2112 ES1A – ES1J Taiwan Semiconductor The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: O2112