2SA1015G

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 150 mA Base Current -IB 50 mA Power Dissipation Ptot 400 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group O Y G L at -VCE = 6 V, -IC = 150 mA Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Base Cutoff Current at -VCB = 50 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 1 mA Output Capacitance at -VCB = 10 V, f = 1 MHz C C Symbol Min. Max. Unit hFE hFE hFE hFE hFE 70 120 200 350 25 140 240 400 700 - - -V(BR)CBO 50 - V -V(BR)CEO 50 - V -V(BR)EBO 5 - V -ICBO - 0.1 µA -IEBO - 0.1 µA -VCE(sat) - 0.3 V -VBE(sat) - 1.1 V fT 80 - MHz COB - 7 pF SEMTECH ELECTRONICS LTD. ® Dated : 17/08/2016 Rev:01 2SA1015 SEMTECH ELECTRONICS LTD. ® Dated : 17/08/2016 Rev:01