山东晶导微电子有限公司
SS22BF THRU SS220BF
Jingdao Microelectronics
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 2.0A
PINNING
PIN
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
DESCRIPTION
1
Cathode
2
Anode
1
2
Simplified outline SMBF and symbol
MECHANICAL DATA
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 57 mg / 0.002oz
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS22BF
SS24BF
SS26BF
SS28BF
SS210BF SS212BF SS215BF SS220BF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
20
40
60
80
100
120
150
200
V
Maximum RMS voltage
V RMS
14
28
42
56
70
84
105
140
V
Maximum DC Blocking Voltage
V DC
20
40
60
80
100
120
150
200
V
Maximum Average Forward Rectified Current
I F(AV)
2.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I FSM
50
A
Max Instantaneous Forward Voltage at 2 A
VF
Maximum DC Reverse Current T a = 25°C
T a =100°C
IR
0.5
5
0.3
3
mA
Typical Junction Capacitance(1)
Cj
220
110
pF
Typical Thermal Resistance (2)
RθJA
75
°C/W
Tj
-55 ~ +125
°C
T stg
-55 ~ +150
°C
at Rated DC Reverse Voltage
Operating Junction Temperature Range
Storage Temperature Range
0.55
0.70
0.85
0.95
V
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2017.01
SMBF-S-SS22BF~SS220BF-2A200V
Page 1 of 3
山东晶导微电子有限公司
SS22BF THRU SS220BF
Jingdao Microelectronics
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
50
75
100
125
150
Instaneous Reverse Current ( μA)
Fig.1 Forward Current Derating Curve
10 4
T J =75°C
10
2
SS22BF/SS26BF
T J =25°C
10 0
0
60
80
T J =25°C
10
1.0
SS22BF/SS24BF
SS26BF/SS28BF
SS210BF/SS212BF
SS215BF/SS220BF
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
500
200
100
20
SS22BF~SS26BF
SS28BF~SS220BF
10
1.8
0.1
1
10
100
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Fig.6- Typical Transient Thermal Impedance
50
40
30
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
1000
Instaneous Forward Voltage (V)
60
10
Junction Capacitance ( pF)
T J =25°C
20
100
Fig.4 Typical Junction Capacitance
10
100
Transient Thermal Impedance( °C /W)
Instaneous Forward Current (A)
40
20
Percent of Rated Peak Reverse Voltage(%)
Fig.3 Typical Forward Characteristic
Peak Forward Surage Current (A)
SS28BF-SS220BF
10 1
Case Temperature (°C)
100
Number of Cycles at 60Hz
2017.01
T J =100°C
10 3
10
1
0.01
0.1
1
10
100
t, Pulse Duration(sec)
www.sdjingdao.com
Page 2 of 3
山东晶导微电子有限公司
SS22BF THRU SS220BF
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SMBF
∠ALL ROUND
C
A
∠ALL ROUND
D
E
A
V M
g
Top View
mil
Bottom View
g
A
C
D
E
HE
e
max
1.3
0.26
4.4
3.7
5.5
2.2
min
1.1
0.18
4.2
3.5
5.1
1.9
max
51
10
173
146
216
86
min
43
7
165
138
200
75
UNIT
mm
g
pad
e
E
A
pad
HE
1.0
9°
40
Marking
The recommended mounting pad size
Type number
3.0(118)
1.8(71)
2.54(100)
1.8(71)
Unit:mm(mil)
2017.01
∠
701034A0
Marking code
SS22BF
S22B
SS24BF
S24B
SS26BF
S26B
SS28BF
S28B
SS210BF
S210B
SS212BF
S212B
SS215BF
S215B
SS220BF
S220B
Page 3 of 3
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