ASDM2301ZA/SOT23

ASDM2301 20V P-CHANNEL MOSFET Product Summary Features ● High Power and current handing capability VDSS ● Lead free product is acquired ● Surface Mount Package RDS(ON) RDS(ON) @-4.5V(Typ) @-2.5V(Typ) -20V 65mΩ 83mΩ ID -3 A Application ●PWM applications ●Load switch ●Power management top view D G SOT-23 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID -3 A Drain Current -Pulsed (Note 1) IDM -10 A Maximum Power Dissipation PD 1 W TJ,TSTG -55 To 150 ℃ RθJA 125 ℃/W Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) NOV 2018 Version1.0 1/8 Ascend Semicondutor Co.,Ltd ASDM2301 20V P-CHANNEL MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit - V Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA A -20 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS - - -100 nA VDS=VGS,ID=-250μA -0.4 -0.65 -1 V VGS=-4.5V, ID=-3A - 65 85 mΩ VGS=-2.5V, ID=-2A - 83 120 mΩ VDS=-5V,ID=-2.8A - 9.5 - S - 405 - PF - 75 - PF - 55 - PF - 11 - nS VGS=-10V,VDS=0V On Characteristics (Note 3) Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-10V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-10V,ID=-1A - 35 - nS td(off) VGS=-4.5V,RGEN=10Ω - 30 - nS - 10 - nS - 3.3 12 nC - 0.7 - nC - 1.3 - nC - - -1.2 V - - -1.3 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-3A, VGS=-2.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=1.3A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production NOV 2018 Version1.0 2/8 Ascend Semicondutor Co.,Ltd ASDM2301 20V P-CHANNEL MOSFET ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit PD Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 4 Drain Current Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output CHARACTERISTICS NOV 2018 Version1.0 Figure 6 Drain-Source On-Resistance 3/8 Ascend Semicondutor Co.,Ltd ASDM2301 ID- Drain Current (A) Normalized On-Resistance 20V P-CHANNEL MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge NOV 2018 Version1.0 Figure 12 Source- Drain Diode Forward 4/8 Ascend Semicondutor Co.,Ltd ASDM2301 ID- Drain Current (A) 20V P-CHANNEL MOSFET Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance NOV 2018 Version1.0 5/8 Ascend Semicondutor Co.,Ltd ASDM2301 20V P-CHANNEL MOSFET Ordering and Marking Information Device ASDM2301ZA Marking Package Packing Quantity A1SHB SOT23 Tape&Reel 3000/Reel MARKING PACKAGE A1SHB SOT23 Ordering Number Lead Free Halogen Free ASDM2301-ZA-R ASDM2301G-ZA-R Package SOT23 1 R:Tape Reel ASDM2301G-ZA -R 2 ZA: SOT23 3 blank : Lead Free 1 Packing Type G:Halogen Free 2 Package Type 3Green Package NOV 2018 Version1.0 6/8 Ascend Semicondutor Co.,Ltd ASDM2301 20V P-CHANNEL MOSFET Symbol Dimensions in Millimeters Dimensions in Inches Min Max Min Max A 0.90 1.15 0.035 0.045 A1 0.00 0.10 0.000 0.004 A2 0.90 1.05 0.035 0.041 b 0.30 0.55 0.012 0.022 C 0.08 0.15 0.003 0.006 D 2.80 3.00 0.110 0.118 E 1.20 1.40 0.047 0.055 2.00 0.071 0.95 TYP e e1 1.80 0.037 TYP 0.079 H 2.25 2.55 0.089 0.100 L 0.30 0.50 0.012 0.020 θ 0∘ 8∘ 0∘ 8∘ NOV 2018 Version1.0 7/8 Ascend Semicondutor Co.,Ltd ASDM2301 20V P-CHANNEL MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2018 Version1.0 8/8 Ascend Semicondutor Co.,Ltd