LPM9017B3F

Preliminary Datasheet LPM9017 - LPM9017 -30V/4A P-Channel Enhancement Mode Field Effect Transistor General Description The LPM9017 is the P-channel logic enhancement Features ■ -30V/-4A,RDS(ON)＜58mΩ(typ.)@VGS=-10V mode power field effect transistors are produced using ■ -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V high cell density, DMOS trench technology. ■ Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to ■ minimize on-state resistance. SOT23 Package These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.      Ordering Information LPM9017- □ □ Applications □ Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor Wireless Card  F: Pb-Free Marking Information Package Type B3: SOT23 Please see website. Pin Configurations SOT23L(Top View) LPM9017 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com Page 1 of 7 Preliminary Datasheet LPM9017 Functional Pin Description LPM9017 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com Page 2 of 7 Preliminary Datasheet LPM9017 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com LPM9017 Page 3 of 7 Preliminary Datasheet LPM9017 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com LPM9017 Page 4 of 7 Preliminary Datasheet LPM9017 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com LPM9017 Page 5 of 7 Preliminary Datasheet LPM9017 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com LPM9017 Page 6 of 7 Preliminary Datasheet LPM9017 Packaging Information LPM9017 – 00 Version 1.0 Datasheet Dec.-2008 www.lowpowersemi.com Page 7 of 7