PDC3908X

PDC3908X 30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This BVDSS RDSON ID 30V 8.5m 60A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features performance, and withstand high energy pulse in the  30V,60A, RDS(ON) =8.5mΩ@VGS = 10V avalanche and commutation mode. These devices are  Improved dv/dt capability well suited for high efficiency fast switching applications.  Fast switching  100% EAS Guaranteed  Green Device Available PPAK5x6 Pin Configuration D D Applications  MB / VGA / Vcore D DD  POL Applications  SMPS 2nd SR S S S G G S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Rating Units VDS Symbol Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V Drain Current – Continuous (TC=25℃) 60 A Drain Current – Continuous (TC=100℃) 38 A Drain Current – Pulsed 240 A 45 mJ 30 A 54 W 0.43 W/℃ ID IDM EAS Parameter 1 Single Pulse Avalanche Energy IAS 2 Single Pulse Avalanche Current 2 Power Dissipation (TC=25℃) PD Power Dissipation – Derate above 25℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 2.3 ℃/W Potens semiconductor corp. Ver.1.03 1 PDC3908X 30V N-Channel MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Static State Characteristics Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient IDSS IGSS RDS(ON) VGS(th) △VGS(th) gfs Drain-Source Leakage Current Gate-Source Leakage Current Static Drain-Source On-Resistance3 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA VGS=±20V , VDS=0V --- --- ±100 nA VGS=10V , ID=16A --- 6.2 8.5 m VGS=4.5V , ID=8A --- 8.9 13 m 1.2 1.6 2.5 V --- -4 --- mV/℃ --- 9.5 --- S --- 7.5 12 --- 4.5 8 --- 1.3 2.6 --- 4.8 9 VDD=15V , VGS=10V , RG=3.3 --- 12.5 24 ID=15A --- 27.6 52 --- 8.2 16 --- 680 1000 --- 150 220 --- 70 105 --- 2.7 5.4  Min. Typ. Max. Unit 12 --- --- mJ Min. Typ. Max. Unit --- --- 60 A VGS=VDS , ID =250uA VGS(th) Temperature Coefficient Forward Transconductance VDS=10V , ID=8A Dynamic Characteristics Qg Total Gate Charge3 , 4 Qgs Gate-Source Charge3 , 4 Qgd Td(on) Tr Td(off) Tf Ciss Gate-Drain Turn-On Delay Rise VDS=15V , VGS=4.5V , ID=20A Charge3 , 4 Time3 , 4 Time3 , 4 Turn-Off Delay Time3 , 4 Fall Time3 , 4 Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=25V , VGS=0V , F=1MHz VGS=0V, VDS=0V, F=1MHz nC ns pF Guaranteed Avalanche Energy Symbol EAS Parameter Single Pulse Avalanche Energy Conditions VDD=25V, L=0.1mH, IAS=15A Drain-Source Diode Characteristics Symbol IS Parameter Continuous Source Current Current3 Conditions VG=VD=0V , Force Current ISM Pulsed Source --- --- 240 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=10A , di/dt=100A/µs --- 8.1 --- ns Qrr Reverse Recovery Charge TJ=25℃ --- 1.6 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Potens semiconductor corp. Ver.1.03 2 PDC3908X Normalized On Resistance (m) ID , Continuous Drain Current (A) 30V N-Channel MOSFETs TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Qg , Gate Charge (nC) Normalized Vth vs. TJ Fig.4 VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Fig.5 Gate Charge Waveform ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) Fig.3 TJ , Junction Temperature (℃) Normalized RDSON vs. TJ VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 Normalized Transient Impedance Fig.6 Potens semiconductor corp. Maximum Safe Operation Area Ver.1.03 3 PDC3908X 30V N-Channel MOSFETs VDS EAS= 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS IAS 10% VGS Td(on) Tr Ton Fig.7 Td(off) VDD Tf Toff Switching Time Waveform VGS Fig.8 Potens semiconductor corp. EAS Waveform Ver.1.03 4 PDC3908X 30V N-Channel MOSFETs PPAK5x6 PACKAGE INFORMATION Symbol A A1 b C D E e F G H L1 K Dimensions In Millimeters Min Max 0.800 1.000 0.000 0.005 0.350 0.490 0.254 Ref 4.900 5.100 5.700 5.900 1.27 BSC 1.400 Ref 0.600 Ref 5.950 6.200 0.100 0.180 4.000 Ref Potens semiconductor corp. Dimensions In Inches Min Max 0.032 0.039 0.000 0.000 0.014 0.019 0.254 Ref 0.193 0.200 0.225 0.232 1.27 BSC 1.400 Ref 0.600 Ref 0.235 0.244 0.004 0.007 4.000 Ref Ver.1.03 5