HSBA4048

HSBA4048 N-Ch 40V Fast Switching MOSFETs Product Summary General Description ⚫ ⚫ ⚫ ⚫ ⚫ 100% UIS Tested Advanced Trench Technology Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Applications VDS 40 V RDS(ON),max 1.8 mΩ ID 100 A PRPAK5X6 Pin Configuration ⚫ SMPS Synchronous Rectification ⚫ DC/DC Converters ⚫ Or-ing Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ ±20 V Continuous Drain Current, VGS @ 10V1,6 100 A Continuous Drain Current, VGS @ 10V1,6 82 A 400 A 400 mJ 40 A 125 W Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 50 ℃/W --- 1 ℃/W 1 HSBA4048 N-Ch 40V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance 2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V VGS=10V , ID=20A --- 1.5 1.8 VGS=4.5V , ID=20A --- 2.0 2.6 VGS=VDS , ID =250uA 1.2 1.6 2.2 VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 m V uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 53 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.0 ---  Qg Total Gate Charge (4.5V) --- 45 --- Qgs Gate-Source Charge --- 12 --- Qgd Gate-Drain Charge --- 18.5 --- Td(on) VDS=15V , VGS=10V , ID=20A --- 18.5 --- Rise Time VDD=15V , VGS=10V , RG=3.3, --- 9 --- Turn-Off Delay Time ID=20A --- 58.5 --- Fall Time --- 32 --- Ciss Input Capacitance --- 3972 --- Coss Output Capacitance --- 1119 --- Crss Reverse Transfer Capacitance --- 82 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 100 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Tr Td(off) Tf Turn-On Delay Time nC VDS=20V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current 1,6 Voltage 2 Conditions Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.5mH,IAS=40A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. 6.Package limitation current is 100A. www.hs-semi.cn Ver 2.0 2 HSBA4048 N-Ch 40V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs TJ www.hs-semi.cn Fig.6 Normalized RDSON vs TJ Ver 2.0 3 HSBA4048 N-Ch 40V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.hs-semi.cn Ver 2.0 4 HSBA4048 N-Ch 40V Fast Switching MOSFETs PRPAK5X6 Package Outline Dimensions www.hs-semi.cn Ver 2.0 5