UFS08A2.8L04-IR0.1
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
Brightking’s UFS08A2.8L04 component is designed to protect low
voltage state-of-the-art CMOS semiconductors from transients caused by
electrostatic discharge (ESD), cable discharge events (CDE), lightning
and other induced voltage surges. The device provides low stand-off
voltages with significant reductions in leakage currents and capacitance
over silicon avalanche diode processes.
The UFS08A2.8L04 features integrated low capacitance compensation
diodes that reduce the typical capacitance 5pF per line.
This combined with low leakage current, means signal integrity preserved
in high-speed applications such as 10/100/1000 Ethernet.
Features
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IEC61000-4-2 ESD 15KV Air, 8KV contact compliance
SOIC-08 surface mount package
Protects four I/O lines
Peak power dissipation of 600W under 8/20μs waveform
Working voltage: 2.8V
Low leakage current
Low operating and clamping voltages
Solid-state silicon avalanche technology
Lead Free/RoHS compliant
Solder reflow temperature: Pure Tin-Sn, 260~270℃
Flammability rating UL 94V-0
Meets MSL level 1, per J-STD-020
Marking: B SLVU2.8-4
Pin Configuration
Applications
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10/100/1000 Ethernet
WAN/LAN Equipment
High current switching systems
Desktops, Servers and Notebook
● Instrumentation
● Analog inputs
● Base stations
Maximum Ratings
Rating
Peak pulse power (tp=8/20μs waveform)
ESD voltage (Contact discharge)
ESD voltage (Air discharge)
Storage & operating temperature range
Revision：21-Mar-17
Symbol
Value
Unit
PPP
600
W
VESD
TSTG ,TJ
±8
±15
-55~+150
kV
℃
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UFS08A2.8L04-IR0.1
Electrical Characteristics (TJ=25℃)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Symbol
Condition
Min.
VRWM
Max.
Unit
2.8
V
VBR
IBR=1mA
Reverse leakage current
IR
VR=2.8V
Each I/O pin
0.1
μA
Clamping voltage (tp=8/20μs)
VC
IPP=5A
8.5
V
Peak pulse current (tp=8/20μs)
IPP
24
A
0Vdc,f=1MHz
Between I/O pins and GND
3
pF
0Vdc,f=1MHz
Line to Line, two I/O pins
connected together on each
line (Note)
6
pF
Off state junction capacitance
CJ
3
V
Note: Ratings with two pins connected together per the recommended configuration (ie pin 1 connected to pin 8, pin 2 connected to
pin 7, pin 3 connected to pin 6, pin 4 connected to pin 5).
Applications Information
Revision：21-Mar-17
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UFS08A2.8L04-IR0.1
Typical Characteristics Curves
Figure 2. Pulse Waveforms
110
100
Peak Power Dissipation (%)
Figure 1. Power Derating Curve
tr
Peak value Ipp
Waveform
Parameters:
tr=8µs
td=20µs
90
80
70
60
50
40
30
td=t|IPP/2
20
10
0
0
5
10
15
20
25
30
t-Time (μs)
Figure 4. Capacitance vs. Reverse Voltage
Junction Capacitance (pF)
Figure 3. Non-Repetitive Peak Pulse vs. Pulse Time
Figure 5. Clamping Voltage vs. Peak Pulse Current
Revision：21-Mar-17
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UFS08A2.8L04-IR0.1
Recommended Soldering Conditions
Reflow Soldering
Recommended Conditions
Profile Feature
Pb-Free Assembly
Average ramp-up rate (TL to TP)
3℃/second max.
Preheat
-Temperature Min (TS min)
-Temperature Max (TS max)
-Time (min to max) (ts)
150℃
200℃
60-180 seconds
TS max to TL
-Ramp-up Rate
3℃/second max.
Time maintained above:
-Temperature (TL)
-Time (tL)
217℃
60-150 seconds
Peak Temperature (TP)
260℃
Time within 5℃ of actual Peak Temperature (tP)
Ramp-down Rate
Time 25℃ to Peak Temperature
Revision：21-Mar-17
20-40 seconds
6℃/second max.
8 minutes max.
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UFS08A2.8L04-IR0.1
Dimensions (SOIC-08)
Dimension
Symbol
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.80
5.00
0.189
0.197
B
5.80
6.20
0.228
0.244
C
3.80
4.00
0.150
0.157
D
1.27
0.050
E
0.33
0.51
0.013
0.020
F
0.40
1.27
0.016
0.050
G
0.19
0.25
0.007
0.010
H
1.35
1.75
0.053
0.069
H1
0.10
0.25
0.004
0.010
H2
1.45
0.057
Packaging
Tape
Reel
Symbol
Dimension (mm)
W
12.00±0.30
P0
4.00±0.10
P1
8.00±0.10
P2
2.00±0.10
D0
Φ1.55±0.10
D1
Φ1.55±0.05
E
1.75±0.10
F
5.50±0.10
A
6.50±0.10
B
5.40±0.10
K
2.00±0.10
t
0.30±0.05
D
Φ330.0±3.0
D2
Φ13.0
W1
13.5
Quantity: 2500PCS
Revision：21-Mar-17
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