ME2803A28M3G

ME2803 Voltage Detectors, ME2803 Series General Description Features ME2803 Series are highly precise, low power  Highly accuracy：±1% (-VDET=1.5V above) consumption voltage detectors, manufactured using  Low power consumption： CMOS technologies. Detect voltage is extremely accurate with minimal temperature drift. CMOS output TYP 0.7uA  configurations are available. (VIN=3.5V, -VDET=2.0V) Detect voltage range ： 1.0V~6.5V in 0.1V increments  Operating voltage range：0.7V~7V  Detect voltage temperature characteristics： TYP±100ppm/℃  Output configuration： CMOS Typical Application Packages  Microprocessor reset circuitry   Memory battery back-up circuits  Power-on reset circuits  Power failure detection 3-pin SOT23-3、SOT89-3、TO-92 Typical Application Circuit V05 www.microne.com.cn Page 1 of 12 ME2803 Selection Guide ME 28 03 X XX X G Environment mark Package T：TO92 M3：SOT23-3 P：SOT89-3 Output Voltage Function Product Type Product Series Microne product series product description ME2803A10M3G VOUT =1.0V；Rising edge detection；Package：SOT23-3 ME2803A A33M3G VOUT =3.3V；Rising edge detection；Package：SOT23-3 NOTE: 1. At present, there are seventeen kinds of voltage value: 1.0V、1.1V、1.4V、1.6V、1.8V、1.9V、2.2V、2.5V、2.6V、2.7V、2.8V、3.0V、3.3V、 3.4V、3.5V、3.8V、4.2V。 2. If you need other voltage and package, please contact our sales staff. V05 www.microne.com.cn Page 2 of 12 ME2803 Pin Configuration 3 1 2 1 3 TO-92 1 2 SOT-23-3 2 3 SOT-89-3 Pin Assignment ME2803XX Pin Number Pin Name Functions 3 GND Ground 1 1 VOUT Output Voltage 2 2 VIN Input Voltage SOT-23-3 SOT-89-3 TO-92 2 3 1 3 Block Diagram V05 www.microne.com.cn Page 3 of 12 ME2803 Absolute Maximum Ratings Parameter Symbal Ratings Units VIN Input Voltage VIN 8 V Output Current IOUT 50 mA VOUT GND-0.3~VIN+0.3 V Output Voltage CMOS Continuous Total Power Dissipation SOT-23-3 300 SOT-89-3 Pd 500 TO-92 mW 500 Operating Ambient Temperature TOpr -40~+85 ℃ Storage Temperature Tstg -40~+125 ℃ Soldering temperature and time Tsolder 260℃, 10s MM 400 V HBM 4000 V ESD Electrical Characteristics (-VDET(S)=1.0V to 6.5V±1% ,Ta=25OC ,unless otherwise noted) Parameter Detect Voltage Hysteresis Range Supply Current Symbol Conditions Min. Typ Max. -VDET（S）≦1.5V -VDET（S） ×0.98 -VDET(S) -VDET(S) ×1.02 -VDET（S）>1.5V -VDET（S） ×0.99 -VDET(S) -VDET(S) ×1.01 - 0.03 0.06 0.1 VIN=2V (1.0V-1.5V) - 0.7 1 VIN =3.5V (1.6V-2.0V) - 0.7 1 1.2 2 1.1 2 1.0 2 -VDET VHYS ISS VIN=4.5V (2.1V-3.9V) VIN =6V (4.0V-5.6V) - VIN=7V (5.7V-6.5V) Iout N-ch Output Current Iout P-ch Operating voltage VIN Responding time tpLH Temperature characteristics   VDET Ta   VDET V V uA VDS=0.5V VIN =0.7V 0.01 0.14 -- mA VDS=0.5V VIN =7V 1.7 3.4 -- mA 0.7 - 7 V 60 us ±350 ppm/℃ - Ta =-40℃ ~ 85℃ - ±100 Note： 1、-VDET(S) ：Specified Detection Voltage value 2、-VDET ：Actual Detection Voltage value 3、Release Voltage：+VDET=-VDET+VHYS V05 Units www.microne.com.cn Page 4 of 12 ME2803 Functional Description： 1、 When input voltage (VIN) rises above detect voltage (–VDET), output voltage (VOUT) will be equal to VIN. 2、 When input voltage (VIN) falls below detect voltage (–VDET), output voltage (VOUT) will be equal to the ground voltage (GND) level. 3、 When input voltage (VIN) falls to a level below that of the minimum operating voltage (VMIN), output will become unstable. In this condition, VIN will equal the pulled-up output (should output be pulled-up.) 4、 When input voltage (VIN) rises above the ground voltage (GND) level, output will be unstable at levels below the minimum operating voltage (VMIN). Between the VMIN and detect release voltage +VDET) levels, the ground voltage (GND) level will be maintained. 5、 When input voltage (VIN) rises above detect release voltage (+VDET), output voltage (VOUT) will be equal to VIN. 6、 The difference between +VDET and –VDET represents the hysteresis range. Timing Chart ME2803XX: Directions for use 1、 Please use this IC within the stated maximum ratings. Operation beyond these limits may cause degrading or permanent damage to the device. 2、When a resistor is connected between the VIN pin and the input with CMOS output configurations, oscillation may occur as a result of voltage drops at RIN if load current(IOUT) exists.(refer to the Oscillation Description(1) below) 3、When a resistor is connected between the VIN pin and the input with CMOS output configurations, oscillation may occur as a result of through current at the time of voltage release even if load current(IOUT) does not exist. (refer to the Oscillation Description(2) below) 4、With a resistor connected between the VIN and the input, detect and release voltage will rise as a result of the IC’s supply current flowing through the VIN pin. V05 www.microne.com.cn Page 5 of 12 ME2803 5、In order to stabilize the IC’s operations, please ensure that VIN pin’s input frequency’s rise and fall times are more than several u Sec/V. Oscillation Description 1、 Output current oscillation with the CMOS output configuration When the voltage applied at IN rises, release operations commence and the detector’s output voltage increase. Load current (IOUT) will flow at RL. Because a voltage drop (RIN*IOUT) is produces at the RIN resistor, located between the input (IN) and the VIN pin. The load current will flow via the IC’s pin. The voltage drop will also lead to a fall in the voltage level at the V IN pin. When the VIN pin voltage level falls below the detect voltage level, detect operations will commence. Fllowing detect operations, load current flow will cease and since voltage drop at R IN will disapper, the voltage level at the VIN pin will rise and release operations will begin over again. Oscillation may occur with this “release-detect-release” repetition. Further, this condition will also appear via means of a similar mechanism during detect operations. 2、 Oscillation as a result of through current Since the ME2803 series are CMOS IC’s, through current will flow when the IC’s internal circuit switching operates (during release and detect operations). Consequently, oscillation is liable to occur as a result of drops in voltage at the through current’s resistor (RIN) during release voltage operations.(refer to diagram 2) since hysteresis exists during detect operations, oscillation is unlikely to occur. V05 www.microne.com.cn Page 6 of 12 ME2803 Type Characteristics 1、Supply Current Vs. Ambient Temperature VIN=2V,-VDET=1.1V VIN=3V,-VDET=2.2V Iss VS Temp I ss VS T E M P Iss (uA) Iss (uA) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -15 7 20 30 40 50 60 70 80 90 100 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 - 1 6 10 20 30 40 50 60 70 80 90 100 T E M P℃) ( Temp (℃) 2、Supply Current Vs. Input Voltage -VDET=1.1V （T=25℃） -VDET=2.2V （T=25℃） Iss VS VIN I s s VS VI N 1.6 1.2 Iss (uA) 1.4 Iss (uA) 1.2 1 0.8 0.6 0.4 1 0.8 0.6 0.4 0.2 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0.5 1 1.5 2 2.5 3 VIN (V) 5 5.5 6 VDET VS TEMP 1.25 2.35 1.2 2.3 VDET (V) VDET (V) 4.5 -VDET=2.2V VDET VS TEMP 1.15 1.1 -VDET 4 VI N ( V) 3、Detect, Release Voltage Vs. Ambient Temperature -VDET=1.1V 1.05 3.5 +VDET 2.25 2.2 2.15 1 +VDET -VDET 2.1 -15 7 20 30 40 50 60 70 80 90 100 110 120 TEMP (℃) V05 -16 10 20 30 40 50 60 70 80 90 100 110 120 TEMP (℃) www.microne.com.cn Page 7 of 12 ME2803 4、 N-Ch Output Current Vs. Input Voltage VDS=0.5V, -VDET=1.1V VDS=0.5V, -VDET=2.2V Iout (N) VS VIN Iout(N) VS VIN 7 1 T=100℃ 0.6 Iout (mA) Iout (mA) T=-15℃ 6 0.8 T=25℃ T=-15℃ 0.4 5 T=23℃ 4 T=85℃ 3 2 0.2 1 0 0 0.2 0.4 0.6 0.8 1 0.2 0.5 0.7 1 VIN (V) 1.2 1.7 T = 2℃ 3 T = - 1℃5 4 4.5 2.2 VIN (V) 5、P-Ch Output Current Vs. Input Voltage VDS=0.5V, -VDET=1.1V VDS=0.5V, -VDET=2.2V I o u t ( P ) VS VI N I o u t ( P ) VS VI N 1.5 3.5 (mA) (mA) 3 2.5 Iout 3.5 Iout 2 1 0.5 T = 1 0℃0 T = 2℃ 5 2.5 3 T = - 1℃5 3 2.5 2 1.5 1 T = 8℃ 5 0.5 0 0 1.2 1.5 2 3.5 5 2.5 2.8 3.2 3.5 VI N ( V) VI N ( V) V05 2.3 www.microne.com.cn Page 8 of 12 5 ME2803 Packaging Information  Package Type：SOT23-3 Millimeters Inches DIM Min Max Min Max A 1.05 1.45 0.0413 0.0571 A1 0 0.15 0.0000 0.0059 A2 0.9 1.3 0.0354 0.0512 A3 0.6 0.7 0.0236 0.0276 b 0.25 0.5 0.0098 0.0197 c 0.1 0.25 0.0039 0.0098 D 2.8 3.1 0.1102 0.1220 E 2.6 3.1 0.1023 0.1220 E1 1.5 1.8 0.0591 0.0709 e L 0.95(TYP) 0.25 L1 θ c1 V05 0.0374(TYP) 0.6 0.0098 0.59(TYP) 0 0.0236 0.0232(TYP) 8° 0.2(TYP) 0.0000 8° 0.0079(TYP) www.microne.com.cn Page 9 of 12 ME2803  Package Type：SOT89-3 Millimeters Inches DIM Min Max Min Max A 1.4 1.6 0.0551 0.0630 b 0.32 0.52 0.0126 0.0205 b1 0.4 0.58 0.0157 0.0228 c 0.35 0.45 0.0138 0.0177 D 4.4 4.6 0.1732 0.1811 D1 1.55(TYP) 0.061(TYP) D2 1.75(TYP) 0.0689(TYP) e1 3.0(TYP) 0.1181(TYP) E 2.3 2.6 0.0906 0.1023 E1 3.94 4.4 0.1551 0.1732 E2 1.9(TYP) 0.0748(TYP) e 1.5(TYP) 0.0591(TYP) L θ V05 0.8 1.2 45° 0.0315 0.0472 45° www.microne.com.cn Page 10 of 12 ME2803  Package Type：TO-92 Millimeters Inches DIM Min Max Min Max A 3.3 3.7 0.1299 0.1457 A1 1.1 1.4 0.0433 0.0551 b 0.38 0.55 0.015 0.0217 c 0.36 0.51 0.0142 0.0201 D 4.3 4.7 0.1693 0.185 D1 3.43 一 0.135 一 E 4.3 4.7 0.1693 0.185 e 1.27TYP 0.05TYP e1 2.44 2.64 0.0961 0.1039 L 14.1 14.5 0.5551 0.5709 h 0 0.38 0 0.015 Φ 一 1.6 一 0.063 V05 www.microne.com.cn Page 11 of 12 ME2803      The information described herein is subject to change without notice. Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Nanjing Micro One Electronics Inc is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro One Electronics Inc. Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. V05 www.microne.com.cn Page 12 of 12