MEM2307M3G

MEM2307M3G P-Channel MOSFET MEM2307M3G General Description Features l MEM2307M3G Series P-channel enhancement -30V/-4.1A mode field-effect transistor ,produced with high cell RDS(ON)＜88mΩ@ VGS=-10V,ID=-4.1A density DMOS trench technology, which is especially RDS(ON)＜108mΩ@ VGS=-4.5V,ID=-3A used to minimize on-state resistance. This device l High Density Cell Design For Ultra Low On-Resistance particularly suits low voltage applications, and low l Subminiature surface mount package: SOT23-3 power dissipation, and low power dissipation in a very small outline surface mount package. Pin Configuration Typical Application l Power management l Load switch l Battery protection Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDSS -30V V Gate-Source Voltage VGSS ±20 V Drain Current TA=25℃ TA=70℃ Pulsed Drain Current1,2 Total Power Dissipation TA=25℃ TA=70℃ ID IDM Pd -4.1 -3.5 -20 1.4 1 A A W Operating Temperature Range TOpr 150 ℃ Storage Temperature Range Tstg -55/150 ℃ V06 www.microne.com.cn Page 1 of 5 MEM2307M3G Thermal Characteristics Parameter Symbol TYP. MAX. Unit Thermal Resistance, Junction-to-Ambient t≤10s RθJA 65 90 ℃/W Thermal Resistance, Junction-to-Ambient Steady-State RθJA 85 125 ℃/W Thermal Resistance, Junction-to-Lead Steady-State RθJL 43 60 ℃/W Electrical Characteristics Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30 Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250uA -1 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current Static Drain-Source On-Resistance V -2 V VDS=0V，VGS=20V 100 nA VDS=0V，VGS=-20V -100 nA IDSS VDS=-24V VGS=0V -1000 nA RDS(ON)1 VGS=-10V,ID=-4.1A 88 mΩ RDS(ON)2 VGS=-4.5V,ID=-3A 108 mΩ Forward Transconductance gFS Maximum Body-Diode Continuous Current Is Source-drain (diode forward) voltage VSD VDS = –5 V, ID = –4A 5.5 VGS=0V,ID=-1A -1.3 8.2 S -2.2 A 0.77 -1.0 V 700 840 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall-Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Switching Characteristics pF 120 75 10 15 Ω 8.6 VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω 5 28.2 ns 13.5 VDS = -15 V, VGS = -4.5 V, ID = -4A 14.3 3.1 nc 3 1、Repetitive rating, pulse width limited by junction temperature. 2、The static characteristics are obtained using 80 µs pulses, duty cycle 0.5% max. V06 www.microne.com.cn Page 2 of 5 MEM2307M3G Typical Performance Characteristics V06 www.microne.com.cn Page 3 of 5 MEM2307M3G V06 www.microne.com.cn Page 4 of 5 MEM2307M3G Package Information Packaging Type: SOT23-3 V06 www.microne.com.cn Page 5 of 5