LPM9031SOF

Preliminary Datasheet LPM9031 Dual channel N-Channel MOSFE General Description Features The LPM9031 is a dual channel MOSFET, which  100% EAS Guaranteed combines advanced trench MOSFET technology  Green Device Available with a low resistance package to provide extremely  Super Low Gate Charge low RDS(ON). This device is suitable for use as a load  Excellent CdV/dt effect decline  Advanced high cell density Trench technology switch or in PWM applications. Pin Description Order Information LPM9031 □ □ Pin Number □ F: Pb-Free Package Type SO：SOP-8 QV：DFN-8 Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Pin Description SOP-8 DFN_8 1 5,6,7 S2 2 8 G2 3 PAD_2 S1 4 1 G1 5,6 2,3,4,PAD_1 D1 7,8 PAD_2 D2 Marking Information Device Marking LPS LPM9031SOF LPM9031 Package SOP-8 Shipping 4K/REEL YWX LPS LPM9031QVF 9031 DFN-8 5K/REEL YWX Y:Production year W:Production period X:Production batch LPM9031-03 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 1 of 8 Preliminary Datasheet LPM9031 Pin Configurations S2 1 8 D2 G1 1 G2 2 7 D2 D1 2 PDA1 PDA2 D1 S1/D2 8 G2 7 S2 S1 3 6 D1 D1 3 6 S2 G1 4 5 D1 D1 4 5 S2 SOP-8 DFN-8 TOP VIEW TOP VIEW Absolute Maximum Ratings Channel 1 and channel 2 have the same maximum ratings Parameter Symbol Maximum Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation TA=70℃ Junction and Storage Temperature Range V 5.8 ID 4.9 IDM TA=25℃ Unit A 30 2 PD W 1.3 TJ, TSTG -55 to 150 ℃ Thermal resistance ratings Parameter Symbol Junction-to-Case Thermal Resistance t ≤ 10s Junction-to-Case Thermal Resistance Steady State Maximum Junction-to-Lead Steady State LPM9031-03 Jan.-2018 RθJA RθJL Email: marketing@lowpowersemi.com TYP Unit 48 ℃/W 74 ℃/W 32 ℃/W www.lowpowersemi.com Page 2 of 8 Preliminary Datasheet LPM9031 Electrical Characteristics Electrical Characteristics (TJ=25℃ unless otherwise noted) Channel 1 and channel 2 have the same electrical characteristics Symbol Parameter Conditions Min BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current IGSS Typ Max Units STATIC PARAMETERS V VDS=30V, VGS=0V 1 TJ=55℃ 5 Gate-Body leakage current VDS=0V, VGS=±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.65 1.45 V ID(ON) On state drain current VGS=4.5V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance 1.05 A VGS=10V, ID=5.8A 18 28 TJ=125℃ 28 39 VGS=4.5V, ID=5A 19 33 VGS=2.5V, ID=4A 24 52 gFS Forward Transconductance VDS=5V, ID=5.8A 33 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS μA Maximum Body-Diode Continuous Current mΩ S 1 V 2 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.5 630 pF 75 pF 50 pF 3 4.5 Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge LPM9031-03 Jan.-2018 6 nC 50 nC 3 nC 3 ns VGS=10V, VDS=15V, 2.5 ns RL=2.6Ω, RGEN=3Ω 25 ns 4 ns IF=5.8A, dI/dt=100A/μs 8.5 ns IF=5.8A, dI/dt=100A/μs 2.6 nC VGS=4.5V, VDS=15V, ID=5.8A Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 3 of 8 Preliminary Datasheet LPM9031 Typical Characteristics LPM9031-03 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 8 Preliminary Datasheet LPM9031-03 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com LPM9031 Page 5 of 8 Preliminary Datasheet LPM9031-03 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com LPM9031 Page 6 of 8 Preliminary Datasheet LPM9031 Packaging Information SOP8 LPM9031-03 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 7 of 8 Preliminary Datasheet LPM9031 DFN8 3*3 LPM9031-03 Jan.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 8 of 8