FHT8550G

SOT-23 三极管（SOT-23 TRANSISTORS） 型号 TYPE VCBO V VCEO V IC mA PD mW FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FHT817-16 FHT817-25 FHT817-40 FHT846A FHT846B FHT847A FHT847B FHT847C FHT848A FHT848B FHT848C FHT849A FHT849B FHT849C FHT850A FHT850B FHT850C FHT856A FHT856B FHT857A FHT857B FHT857C FHT858A FHT858B FHT858C FHT918 FHT1298 FHT1304 FHT1504 FHT1505 FHT1517 FHT1623 FHT2222 FHT2222A FHT2487 FHT2875 40 30 -110 120 40 -50 -50 -50 50 50 50 80 80 50 50 50 30 30 30 30 30 30 50 50 50 -80 -80 -50 -50 -50 -30 -30 -30 30 -35 25 15 -100 80 25 -45 -45 -45 45 45 45 65 65 45 45 45 30 30 30 30 30 30 45 45 45 -65 -65 -45 -45 -45 -30 -30 -30 15 -30 20 -50 -30 -120 50 30 40 60 20 25 100 -100 100 25 -500 -500 -500 500 500 500 100 100 100 100 100 100 100 100 100 100 100 100 100 100 -100 -100 -100 -100 -100 -100 -100 -100 50 -800 300 -150 -500 -100 100 600 600 50 300 200 200 225 225 200 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 200 200 150 150 150 300 200 200 225 150 -50 60 60 75 60 hFE Ic/VCE Min/Max mA/Volts 40 7/10 20 3/1 30 -10/1.0 20 10/1.0 40 7/10 100/250 -100/-1.0 160/400 -100/-1.0 250/600 -100/-1.0 100/250 100/1.0 160/400 100/1.0 250/600 100/1.0 110/220 2.0/5.0 200/450 2.0/5.0 110/220 2.0/5.0 200/450 2.0/5.0 420/800 2.0/5.0 110/220 2.0/5.0 200/450 2.0/5.0 420/800 2.0/5.0 110/220 2.0/5.0 200/450 2.0/5.0 420/800 2.0/5.0 110/220 2.0/5.0 200/450 2.0/5.0 420/800 2.0/5.0 125/250 -2.0/-5.0 220/475 -2.0/-5.0 125/250 -2.0/-5.0 220/475 -2.0/-5.0 420/800 -2.0/-5.0 125/250 -2.0/-5.0 220/475 -2.0/-5.0 420/800 -2.0/-5.0 20 3.0/1.0 100/320 -100/-1 200/800 4/2.0 70/400 -2/-6 70/400 -100/-1 700 -2/-6 90/600 1/6 35 0.1/10 35 0.1/10 250 1.0/5.0 200/1200 4/2.0 1 VCE(sat) Max Volts IC/IB mA 0.4 -0.25 0.2 10/1 -25/-2.5 50/15 -0.7 -0.7 -0.7 0.7 0.7 0.7 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 -0.65 -0.65 -0.65 -0.65 -0.65 -0.65 -0.65 -0.65 0.4 -0.4 0.25 -0.3 -0.25 -0.3 0.3 0.4 0.3 0.35 0.3 -500/-50 -500/-50 -500/-50 500/50 500/50 500/50 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 100/5.0 -100/-5.0 -100/-5.0 -100/-5.0 -100/-5.0 -100/-5.0 -100/-5.0 -100/-5.0 -100/-5.0 10/1.0 -500/-20 100/10 -100/-10 -100/-10 -10/-1 100/10 150/15 150/15 10/0.1 30/3.0 f TYPE MHz 550 600 95 60 550 200 200 200 200 200 200 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 600 120 60 80 200 250 250 300 30 内部 结构 STYLE 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 FHT2907 FHT2907A FHT3121 FHT3265 FHT3295 FHT3356 FHT3837 FHT3838 FHT3875 FHT3876 FHT3878 FHT3879 FHT3880 FHT3881 FHT3882 FHT3883 FHT3903 FHT3904 FHT3905 FHT3906 FHT3911 FHT4400 FHT4401 FHT4402 FHT4403 FHT5087 FHT5088 FHT5089 FHT5400 FHT5401 FHT5550 FHT5551 FHT6427 FHT6428 FHT6429 FHT6517 FHT6520 FHT8050 FHT8550 FHT8599 FHT9011 FHT9012 FHT9013 FHT9014 FHT9015 FHT9016 FHT9018 FHTA05 -60 -60 35 20 30 20 60 40 60 -40 60 -40 -50 35 30 -160 160 180 40 60 55 350 -350 40 -40 -80 40 -40 40 50 -50 30 60 -40 -60 15 30 50 12 18 11 50 30 30 30 30 25 15 15 40 40 -40 -40 120 40 40 -40 -40 -50 30 25 -120 -150 140 160 40 50 45 350 -350 25 -25 -80 30 -30 30 45 -45 19 19 60 -600 -600 50 800 150 100 50 50 150 500 100 50 20 50 50 200 200 200 -200 -200 100 600 600 -600 -600 -50 50 50 -600 -500 600 600 500 200 200 500 -500 800 -800 -500 50 -500 500 150 -150 20 50 500 200 200 150 200 150 300 300 300 150 150 150 150 150 150 150 150 200 200 200 200 150 200 200 200 200 225 225 225 200 225 225 225 225 225 225 225 225 200 200 225 150 150 150 150 150 150 150 225 35 75 60/320 100/320 600/3600 50/300 56/390 56/390 70/700 70/400 40/240 40/240 40/200 20/200 40/200 55/140 20 40 30 60 700 20 20 30 30 250/800 300/900 400/1200 40/180 60/360 60/250 80/360 10,000/100,000 250/650 500/1250 30/200 30/200 85/300 85/300 100/300 40/240 70/400 70/400 70/700 70/400 40/200 40/300 100 2 -0.1/-10 -0.1/-10 8/3.0 100/1.0 2.0/6 20/10 10/10 5/10 2.0/6 100/1 2.0/12 2.0/12 1.0/6 10/10.0 8/3.0 10/1.0 0.1/1 0.1/1 -0.1/-1 -0.1/-1 2.0/6 1.0/1.0 0.1/1.0 -1.0/-1.0 -0.1/-10 -0.1/-5.0 100/5.0 100/5.0 -10/-5 -10/-5.0 10/5.0 10/5.0 10/5.0 0.1/0.5 0.1/0/5 30/10 -30/-10 100/1.0 -100/-1 -1.0/-5.0 2.0/12 -100/-1 100/1 2.0/6 -2/-6 1.0/5 1.0/5 10/1.0 -0.4 -0.4 -150/-15 -150/-15 0.5 0.25 0.5 0.5 0.5 0.25 0.25 0.4 0.4 500/20 100/10 10/5.0 20/4.0 10/5.0 100/10 100/10 10/1.0 10/1.0 0.2 15/1.5 0.25 0.2 0.2 -0.25 -0.25 0.3 0.4 0.4 -0.4 -0.4 -0.3 0.5 0.5 -0.2 -0.5 0.25 0.2 1.2 0.6 0.6 1 -1 0.6 -0.6 -0.4 0.4 -0.6 0.6 0.6 -0.6 0.6 0.6 0.25 10/1.0 10/1.0 10/1.0 -10/-1 -10/-1 10/1.0 150/15 150/15 -150/-15 -150/-15 -10/-1.0 10/1.0 10/1.0 -10/-1 -50/-0.5 50/5.0 50/5.0 50/0.5 100/5.0 100/5.0 50/5.0 -50/-5.0 500/50 -500/-50 -100/-5.0 10/1.0 -500/-50 500/50 100/5 -100/-5 10/1 10/1 100/10 200 200 1500 120 250 7000 1500 3200 80 300 120 550 600 1100 300 300 200 250 200 250 200 200 40 50 50 100 100 100 40 40 120 120 150 200 300 180 200 300 1000 100 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 FHTA06 FHTA13 FHTA14 FHTA20 FHTA42 FHTA43 FHTA44 FHTA55 FHTA56 FHTA63 FHTA64 FHTA70 FHTA92 FHTA93 FHTA517 FHTH10 FHTH24 FHTH69 FHTH81 FHTV71 FHTV72 FHTW29 FHTW30 FHTW31 FHTW32 FHTW33 FHTW60A FHTW60B FHTW60D FHTW61B FHTW61C FHTW61D FHTW65A FHTW68F FHTW68G FHTW69 FHTW70 FHTW71 FHTW72 FHTW89 FHTX17 FHTX18 FHTX19 FHTX20 FHTX70G FHTX70J FHTX70K 80 30 30 300 200 400 -60 -80 -30 -30 -300 -200 40 30 40 -15 -20 60 60 -32 -32 30 30 30 32 32 32 -32 -32 -32 60 -60 -60 -50 -50 50 50 -60 -50 -30 50 30 45 45 45 80 VCES=30 VCES=30 40 300 200 400 -60 -80 VCES=-30 VCES=-30 -40 -300 -200 30 25 30 -15 -20 60 60 -32 -32 20 20 20 32 32 32 -32 -32 -32 32 -45 -45 -45 -45 45 45 -60 -45 -25 45 25 45 45 45 500 300 300 100 500 500 100 -500 -500 -500 -500 -100 -500 -500 400 50 100 100 -100 -100 100 100 100 100 100 100 -100 -100 -100 800 -800 -800 -100 -100 100 100 -100 -800 -500 500 500 200 500 500 225 225 225 225 225 225 225 225 225 225 225 225 225 225 200 225 225 225 225 200 200 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 225 200 225 225 225 225 225 225 225 100 5000 10,000 40/400 40 40 70/200 100 100 5,000 10,000 40/400 25 25 30,000 60 30 30/300 60 110/220 200/450 120/260 215/500 110/220 200/450 420/800 120/200 175/310 380/630 140/310 250/460 380/630 75/220 75/250 120/400 120/260 215/500 110/220 200/450 120/260 100/600 100/600 100/600 100/600 120/220 250/460 380/630 3 10/1.0 10/5.0 10/5.0 5.0/10 10/10 10/10 10/10 -10/-1.0 -10/-1.0 -10/5.0 -10/5.0 -5.0/-10 -30/-10 -30/-10 100/2 4.0/10 8.0/10 -10/-10 -5.0/-10 2/5 2/5 -2/-5 -2/-5 2/5 2/5 2/5 2/5 2/5 2/5 -2/-5 -2/-5 -2/-5 10/1.0 -10/-1 -10/-1 -2.0/-5.0 -2.0/-5.0 2.0/5.0 2.0/5.0 -2.0/-5.0 -100/-1.0 -100/-1.0 100/1.0 100/1.0 2.0/5.0 2.0/5.0 2.0/5.0 0.25 1.5 1.5 0.25 0.5 0.5 0.5 -0.25 -0.25 -1.5 -1.5 -0.25 -0.5 -0.5 1 0.5 100/10 100/0.1 100/0.1 10/1.0 20/2 20/2 100/10 -100/-10 -100/-10 -100/-0.1 -100/-0.1 -10/-1.0 -20/-2.0 -20/-2.0 100/1 4.0/0.4 -0.5 0.25 0.25 -0.3 -0.3 0.25 0.25 0.25 0.55 0.55 0.55 -0.55 -0.55 -0.55 0.7 -1.5 -1.5 -0.3 -0.3 0.25 0.25 -0.3 -0.62 -0.62 0.62 0.62 0.35 0.35 0.35 -5.0/-0.5 10/0.5 10/0.5 -10/-0.5 -10/-0.5 10/0.5 10/0.5 10/0.5 50/1.25 50/1.25 50/1.25 -50/-1.25 -50/-1.25 -50/-1.25 500/50 -300/-30 -300/-30 -10/-0.5 -10/-0.5 10/0.5 10/0.5 -10/-0.5 -500/-50 -500/-50 500/50 500/50 10/0.25 10/0.25 10/0.25 100 125 125 125 50 50 50 50 50 125 125 125 50 50 220 650 620 2000 600 300 300 125 125 125 100 100 100 300 300 125 125 125 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 General Purpose Transistors 三极管 PNP Silicon (FHT1015) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ.) Low Noise 低噪声:NF=1dB(Typ.),10dB(Max.) Complementary to FHT1815 与 FHT1815 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 -50 -50 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO -5.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB -150 -30 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT1015O=TO(70～140),FHT1015Y=TY(120～240),FHT1015G=TG(200～400) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=-50V,IE=0 — — -0.1 µA IEBO VEB=-5V,IC=0 — — -0.1 µA V(BR)CEO IC=-1.0mA -50 — — V V(BR)CBO IC=-100µA -50 — — V V(BR)EBO IE=-100µA -5 — — V hFE VCE=-6V,IC=-2mA 70 — 400 — V CE(sat) IC=-100mA,IB=-10mA — — -0.3 V VBE VCE=-5.0V,IC=-10mA — — -0.82 V fT VCE=-5.0V,IC=-10mA 100 200 — MHz Cob VCB=-10V,IE=0,f=1MHz — 4.0 7.0 pF 4 General Purpose Transistors 三极管 NPN Silicon (FHT1815) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ.) High 高 hFE:hFE=70～700 Low Noise 低噪声:NF=1dB(Typ.),10dB(Max.) Complementary to FHT1015 与 FHT1015 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 50 60 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 5.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB 150 30 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT1815O=BO(70～140), FHT1815Y=BY(120～240) FHT1815G=BG(200～400), FHT1815L=BL(350～700) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=60V,IE=0 — — 0.1 µA IEBO VEB=5V,IC=0 — — 0.1 µA V(BR)CEO IC=1.0mA 50 — — V V(BR)CBO IC=100µA 60 — — V V(BR)EBO IE=100µA 5 — — V hFE VCE=6V,IC=2mA 70 — 700 — V CE(sat) IC=100mA,IB=10mA — — 0.25 V VBE VCE=5.0V,IC=10mA — — 0.82 V fT VCE=5.0V,IC=10mA VCB=10V,IE=0, f=1MHz 100 180 — MHz — 4.0 7.0 pF Cob 5 General Purpose Transistors 三极管 PNP Silicon (FHT1037) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ.) Low Noise 低噪声:NF=1dB(Typ.),10dB(Max.) Complementary to FHT2412 与 FHT2412 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CEO V CBO V EBO Ic IB PC Tj Tstg Rating 额定值 -50 -60 -6.0 -150 -30 200 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mAdc mW ℃ ℃ DEVICE MARKING 打标 hFE(1)FHT1037Q=FQ(120～270),FHT1037R=FR(180～390), FHT1037S=FS(270～560) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=-60V,IE=0 — — -0.1 µA IEBO VEB=-6V,IC=0 — — -0.1 µA V(BR)CEO IC=-1.0mA -50 — — V V(BR)CBO IC=-50µA -60 — — V V(BR)EBO IE=-50µA -6 — — V hFE VCE=-6V,IC=-1mA 120 — 560 — VCE(sat) IC=-50mA,IB=-5mA — — -0.5 V — 140 — MHz — 4.0 5.0 pF Transition Frequency 特征频率 fT Collector Output Capacitance 输出电容 Cob VCE=-12V,IE=2mA, f=30MHz VCB=-12V,IE=0, f=1MHz 6 General Purpose Transistors 三极管 NPN Silicon (FHT2412) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ.) Low Noise 低噪声:NF=1dB(Typ.),10dB(Max.). Complementary to FHT1037 与 FHT1037 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 50 60 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 7.0 Vdc Collector Current—Continuous 集电极电流-连续 Ic 150 mAdc Collector Power Dissipation 集电极耗散功率 PC 200 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT2412Q=BQ(120～270)，FHT2412R=BR(180～390)， FHT2412S=BS(270～560) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=60V,IE=0 — — 0.1 µA IEBO VEB=7V,IC=0 — — 0.1 µA V(BR)CEO IC=1.0mA 50 — — V V(BR)CBO IC=50µA 60 — — V V(BR)EBO IE=50µA 7 — — V hFE VCE=6V,IC=1mA 120 — 560 — VCE(sat) IC=50mA,IB=5mA — — 0.4 V Transition Frequency 特征频率 fT VCE=12V,IE=-2mA, f=100MHz — 180 — MHz Collector Output Capacitance 输出电容 Cob VCB=12V,IE=0,f=1MHz — 2.0 3.5 pF Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 7 General Purpose Transistors 三极管 PNP Silicon (FHT1504) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ.) Low Noise 低噪声:NF=1dB(Typ.),10dB(Max.). Complementary to FHT3875 与 FHT3875 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 -50 -50 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO -5.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB -150 -30 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT1504O=SO(70～140),FHT1504Y=SY(120～240),FHT1504G=SG(200～400) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=-50V,IE=0 — — -0.1 µA IEBO VEB=-5V,IC=0 — — -0.1 µA V(BR)CEO IC=-1.0mA -50 — — V V(BR)CBO IC=-100µA -50 — — V V(BR)EBO IE=-100µA -5 — — V hFE VCE=-6V,IC=-2mA 70 — 400 — VCE(sat) IC=-100mA,IB=-10mA — — -0.3 V VBE VCE=-5.0V,IC=-10mA — — -0.82 V fT VCE=-5.0V,IC=-10mA 100 200 — MHz Cob VCB=-10V,IE=0,f=1MHz — 4.0 7.0 pF 8 General Purpose Transistors 三极管 NPN Silicon (FHT3875) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ.) High 高 hFE:hFE=70～700 Low Noise 低噪声:NF=1dB(Typ.),10dB(Max.). Complementary to FHT1504 与 FHT1504 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 50 60 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 5.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB 150 30 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT3875O=AO(70～140), FHT3875Y=AY(120～240) FHT3875G=AG(200～400), FHT3875L=AL(350～700) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=60V,IE=0 — — 0.1 µA IEBO VEB=5V,IC=0 — — 0.1 µA V(BR)CEO IC=1.0mA 50 — — V V(BR)CBO IC=100µA 60 — — V V(BR)EBO IE=100µA 5 — — V hFE VCE=6V,IC=2mA 70 — 700 — VCE(sat) IC=100mA,IB=10mA — — 0.25 V VBE VCE=5.0V,IC=10mA — — 0.82 V fT VCE=5.0V,IC=10mA VCB=10V,IE=0, f=1MHz 100 180 — MHz — 4.0 7.0 pF Cob 9 General Purpose Transistors 三极管 PNP Silicon (FHTA1514) FEATURES 特点 High Breakdown Voltage (BVCEO=-120V) 击穿电压高 (BVCEO=-120V). Complementary to FHTC3906 与 FHTC3906 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 -120 -120 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO -5.0 Vdc Collector Current—Continuous 集电极电流-连续 Ic -50 mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHTA1514R=SR(180～390), FHTA1514S=SS(270～560) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=-100V,IE=0 — — -0.5 µA IEBO VEB=-4V,IC=0 — — -0.5 µA V(BR)CEO IC=-1.0mA -120 — — V V(BR)CBO IC=-50µA -120 — — V V(BR)EBO IE=-50µA -5 — — V hFE VCE=-6V,IC=-2mA 180 — 560 — V CE(sat) IC=-10mA,IB=-1mA — — -0.5 V — 140 — MHz — 3.2 — pF Transition Frequency 特征频率 fT Collector Output Capacitance 输出电容 Cob VCE=-12V,IE=2mA, f=30MHz VCB=-12V,IE=0, f=1MHz 10 General Purpose Transistors 三极管 NPN Silicon (FHTC3906) FEATURES 特点 High Breakdown Voltage (BVCEO= 120V) 击穿电压高 (BVCEO= 120V). Complementary to FHTA1514 与 FHTA1514 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 120 120 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 5.0 Vdc Collector Current—Continuous 集电极电流-连续 Ic 50 mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHTC3906R=TR(180～390),FHTC3906S=TS(270～560) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector Base Breakdown Voltage 集电极 基极击穿电压 Collector Emitter Breakdown Voltage 集电极 发射极击穿电压 Emitter Base Breakdown Voltage 发射极 基极击穿电压 DC Current Gain 直流电流增益 Collector Emitter Saturation Voltage 集电极 发射极饱和压降 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB= 100V,IE=0 — — 0.5 µA IEBO VEB= 4V,IC=0 — — 0.5 µA V(BR)CBO IC= 50µA 120 — — V V(BR)CEO IC= 1.0mA 120 — — V V(BR)EBO IE= 50µA 5 — — V hFE VCE= 6V,IC= 2mA 180 — 560 — V CE(sat) IC= 10mA,IB= 1mA — — 0.5 V — 140 — MHz — 2.5 — pF Transition Frequency 特征频率 fT Collector Output Capacitance 输出电容 Cob VCE= 12V,IE=-2mA, f=100MHz VCB= 12V,IE=0,f=1MHz 11 General Purpose Transistors 三极管 PNP Silicon (FHT807-16,FHT807-25,FHT807-40) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 V CEO V CBO V EBO Ic Rating 额定值 -45 -50 -5.0 -500 Unit 单位 Vdc Vdc Vdc mAdc Symbol 符号 Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHT807-16=5A(100~250),FHT807-25=5B(160~400),FHT807-40=5C(250~600) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Symbol 符号 Test Condition 测试条件 Min 最小值 Collector Cutoff Current 集电极截止电流 ICBO VCB =-20Vdc — V(BR)CEO Ic=-10 mAdc, IB=0 -45 V(BR)CBO Ic=-10μAdc, IE=0 发射极-基极击穿电压 V(BR)EBO DC Current Gain 直流电流增益 hFE(1) hFE(2) Collector-Emitter Breakdown Voltage (3) 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage Max 最大值 Unit 单位 -100 nAdc — — Vdc -50 — — Vdc IE=-1.0μAdc, IC=0 -5.0 — — Vdc Ic=-100mAdc,VCE=-1.0Vdc Ic=-500mAdc,VCE=-1.0Vdc 100 40 — — 600 — — — — — -0.7 Vdc — — -1.2 Vdc 100 — — MHz — — 10 pF Collector-Emitter Saturation V CE(sat) Ic=-500mAdc,IB=-50mAdc Voltage 集电极-发射极饱和压降 Base-Emitter On Voltage Ic=-500mAdc,VCE=-1.0Vdc V BE(on) 基极-发射极导通电压 Current-Gain-Bandwidth Ic=-10mAdc,VCE=-5.0Vdc, fT Product 电流增益-带宽乘积 f=100MHz Output Capacitance 输出电容 Cobo VCB=-10Vdc,IE=0,f=1.0MHz 1. FR-5=1.0×0.75×0.062 in. 2. Alumina=0.4×0.3×0.024 in. 99.5% alumina. 3. Pulse Width≤300μs; Duty Cycle≤2.0%. 12 Type 典型值 General Purpose Transistors 三极管 NPN Silicon (FHT817-16,FHT817-25,FHT817-40) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 V CEO V CBO V EBO Ic Rating 额定值 45 50 5.0 500 Unit 单位 Vdc Vdc Vdc mAdc Symbol 符号 Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHT817-16=6A(100~250),FHT817-25=6B(160~400),FHT817-40=6C(250~600) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Symbol 符号 Test Condition 测试条件 Min 最小值 Collector Cutoff Current 集电极截止电流 ICBO VCB =20Vdc — Collector-Emitter Breakdown Voltage (3) 集电极-发射极击穿电压 V(BR)CEO Ic=10 mAdc, IB=0 45 V(BR)CBO Ic=10μAdc, IE=0 V(BR)EBO hFE(1) hFE(2) Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Max 最大值 Unit 单位 100 nAdc — — Vdc 50 — — Vdc IE=1.0μAdc, IC=0 5.0 — — Vdc Ic=100mAdc,VCE=1.0Vdc Ic=500mAdc,VCE=1.0Vdc 100 40 — — 600 — — — — — 0.7 Vdc — — 1.2 Vdc 100 — — MHz — — 10 pF Collector-Emitter Saturation V CE(sat) Ic=500mAdc,IB=50mAdc Voltage 集电极-发射极饱和压降 Base-Emitter On Voltage Ic=500mAdc,VCE=1.0Vdc V BE(on) 基极-发射极导通电压 Current-Gain-Bandwidth Product Ic=10mAdc,VCE=5.0Vdc, fT 电流增益-带宽乘积 f=100MHz Output Capacitance 输出电容 Cobo VCB=10Vdc,IE=0,f=1.0MHz 1. FR-5=1.0×0.75×0.062 in. 2. Alumina=0.4×0.3×0.024 in. 99.5% alumina. 3. Pulse Width≤300μs; Duty Cycle≤2.0%. 13 Type 典型值 General Purpose Transistors 三极管 NPN Silicon (FHT846A,FHT846B,FHT847A,FHT847B,FHT847C,FHT848A,FHT848B,FHT848C) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Symbol 符号 FHT846 V CEO FHT847 FHT848 FHT846 V CBO FHT847 FHT848 FHT846 V EBO FHT847 FHT848 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Rating 额定值 65 45 30 80 50 30 6 6 5 Unit 单位 100 mAdc Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W Ic Vdc Vdc Vdc THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5 Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 Symbol 符号 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHT846A=1M (110~220),FHT846B=1N(200~450), FHT847A=1E (110~220),FHT847B=1F(200~450),FHT847C=1H(420~800), FHT848A=1J (110~220),FHT848B=1K(200~450),FHT848C=1T(420~800) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Collector-Emitter BreakdownVoltage (3) 集电极-发射极击穿电压 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB =30Vdc — — 15 nAdc Ic=10 mAdc, IB=0 65 45 30 — — Vdc V(BR)CEO FHT846 FHT847 FHT848 14 ELECTRICAL CHARACTERISTICS 电特性（Continued 续前页） Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Saturation Voltage 基极-发射极饱和压降 FHT846 FHT847 FHT848 FHT846 FHT847 FHT848 FHT846 FHT847 FHT848 V(BR)CBO V(BR)EBO hFE Ic=2.0mAdc, VCE=5.0Vdc Ic=10mAdc, IB=0.5mAdc Ic=100mAdc, IB =5.0mAdc Ic=10mAdc, IB=0.5mAdc Ic=100mAdc, IB =5.0mAdc Ic=2.0mAdc, VCE=5.0Vdc Ic=10mAdc, VCE=5.0Vdc Ic=10mAdc, VCE=5.0Vdc, f=100MHz V BE(sat) V BE(on) Current-Gain-Bandwidth Product 电流增益-带宽乘积 fT Output Capacitance 输出电容 Cobo NF 1. 2. 3. IE=10μAdc, IC=0 V CE(sat) Base-Emitter On Voltage 基极-发射极导通电压 Noise Figure 噪声系数 Ic=10μAdc, IE=0 FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width≤300μs; Duty Cycle≤2.0%. 15 80 50 30 6.0 6.0 5.0 110 110 110 — — — Vdc — — Vdc — — — 450 800 800 — — — — 0.25 Vdc — — 0.6 — 0.7 — Vdc — 0.9 — 580 660 700 mV — — 770 100 — — MHz VCB=10Vdc, IE=0,f=1.0MHz — — 4 pF RS=2.0kΩ, BW=200Hz， VCE=5.0Vdc, IC=200μAdc, f=1.0KHz — — 10.0 dB General Purpose Transistors 三极管 NPN Silicon (FHT849A,FHT849B,FHT849C) MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Base Voltage 集电极-基极电压 Collector-Emitter Voltage 集电极-发射极电压 Symbol 符号 V CBO V CEO Rating 额定值 30 30 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 5.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB 100 30 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 FHT849A=1E(110~220),FHT849B=1F(200~450),FHT849C=1H(420~800) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=50V,IE=0 — — 15 nA V(BR)CBO IC=10mA 30 — — V V(BR)CEO IC=10µA 30 — — V V(BR)EBO IE=1.0µA 5 — — V hFE VCE=5V,IC=2mA IC=10mA,IB=0.5mA IC=100mA,IB=5mA IB=0.5mA,IC=10mA IB=5.0mA,IC=100mA VCE=5.0V,IC=2.0mA VCE=5.0V,IC=10mA 110 — — — — 580 — — — 0.70 0.90 660 800 0.25 0.6 — — 700 770 — V CE(sat) V Base-Emitter Voltage 基极-发射极电压 VBE(sat) Base-Emitter on Voltage 基极-发射极导通电压 VBE(on) Transition Frequency 特征频率 fT VCE=5.0V,IC=10mA 100 — — MHz Collector Output Capacitance 输出电容 Cob VCB=10V,IE=0,f=1MHz — 4.0 7.0 pF 16 V mV General Purpose Transistors 三极管 PNP Silicon (FHT856A,FHT856B,FHT857A,FHT857B,FHT857C,FHT858A,FHT858B,FHT858C) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Symbol 符号 FHT856 V CEO FHT857 FHT858 FHT856 V CBO FHT857 FHT858 FHT856 V EBO FHT857 FHT858 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Rating 额定值 -65 -45 -30 -80 -50 -30 -5 -5 -5 Unit 单位 -100 mAdc Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W Ic Vdc Vdc Vdc THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5 Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 Symbol 符号 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHT856A=3A (110~220),FHT856B=3B(200~450), FHT857A=3E (110~220),FHT857B=3F(200~450),FHT857C=3H(420~800), FHT858A=3J (110~220),FHT858B=3K(200~450),FHT858C=3T(420~800) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Collector-Emitter BreakdownVoltage (3) 集电极-发射极击穿电压 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB =-30Vdc — — -15 nAdc Ic=-10 mAdc, IB=0 -65 — — Vdc V(BR)CEO FHT856 17 ELECTRICAL CHARACTERISTICS 电特性（Continued 续前页） Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 FHT857 FHT858 FHT856 FHT857 FHT858 FHT856 FHT857 FHT858 FHT856 FHT857 FHT858 V(BR)CBO V(BR)EBO hFE Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 V CE(sat) Base-Emitter Saturation Voltage 基极-发射极饱和压降 V BE(sat) Base-Emitter On Voltage 基极-发射极导通电压 V BE(on) Current-Gain-Bandwidth Product 电流增益-带宽乘积 fT Output Capacitance 输出电容 Cobo NF Noise Figure 噪声系数 1. 2. 3. Ic=-10μAdc, IE=0 IE=-10μAdc, IC=0 Ic=-2.0mAdc, VCE=-5.0Vdc Ic=-10mAdc, IB=-0.5mAdc Ic=-100mAdc, IB =-5.0mAdc Ic=-10mAdc, IB=-0.5mAdc Ic=-100mAdc, IB =-5.0mAdc Ic=-2.0mAdc, VCE=-5.0Vdc Ic=-10mAdc, VCE=-5.0Vdc Ic=-10mAdc, VCE=-5.0Vdc, f=100MHz FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width≤300μs; Duty Cycle≤2.0%. 18 -45 -30 -80 -50 -30 -5.0 -5.0 -5.0 110 110 110 — — Vdc — — Vdc — — — 450 800 800 — — — — — -0.3 — — -0.65 — -0.7 — Vdc Vdc — -0.9 — -600 — -750 mV — — -820 100 — — MHz VCB=-10Vdc, IE=0,f=1.0MHz — — 4 pF RS=2.0kΩ, BW=200Hz， VCE=-5.0Vdc, IC=-200μAdc, f=1.0KHz — — 10.0 dB General Purpose Transistors 三极管 NPN Silicon (FHTA06) FEATURES 特点 Complementary to FHTA56 与 FHTA56 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CEO V CBO V EBO Ic PC Tj Tstg Rating 额定值 80 80 4.0 500 300 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mW ℃ ℃ DEVICE MARKING 打标 hFE(1) FHTA06=1GM ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector Emitter Breakdown Voltage 集电极发射极击穿电压 Emitter Base Breakdown Voltage 发射极基极击穿电压 DC Current Gain 直流电流增益 Collector Emitter Saturation Voltage 集电极发射极饱和压降 Base Emitter Voltage 基极发射极电压 Transition Frequency 特征频率 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=80V,IE=0 — — 0.1 µA ICEO VCE=60V,IC=0 — — 0.1 µA V(BR)CEO IC=1.0mA 80 — — V V(BR)EBO IE=100µA 4.0 — — V hFE (1) hFE (2) VCE=1V,IC=10mA VCE=1V,IC=100mA 100 100 — — — — — V CE(sat) IC=100mA,IB=10mA — — 0.25 V VBE VCE=1V,IC=100mA — — 1.2 V fT VCE=2V,IC=10mA, f=100MHz 100 — — MHz 19 General Purpose Transistors 三极管 NPN Silicon (FHTA06R) FEATURES 特点 Complementary to FHTA56R 与 FHTA56R 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CEO V CBO V EBO Ic PC Tj Tstg Rating 额定值 80 80 4.0 500 300 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mW ℃ ℃ DEVICE MARKING 打标 hFE(1) FHTA06R=1GM ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector Emitter Breakdown Voltage 集电极发射极击穿电压 Emitter Base Breakdown Voltage 发射极基极击穿电压 DC Current Gain 直流电流增益 Collector Emitter Saturation Voltage 集电极发射极饱和压降 Base Emitter Voltage 基极发射极电压 Transition Frequency 特征频率 Symbol 符 号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=80V,IE=0 — — 0.1 µA ICEO VCE=60V,IC=0 — — 1 µA V(BR)CEO IC=1.0mA 80 — — V V(BR)EBO IE=100µA 4.0 — — V hFE (1) hFE (2) VCE=1V,IC=10mA VCE=1V,IC=100mA 100 100 — — — — — VCE(sat) IC=100mA,IB=10mA — — 0.25 V VBE VCE=1V,IC=100mA — — 1.2 V fT VCE=2V,IC=10mA, f=100MHz 100 — — MHz 20 General Purpose Transistors 三极管 PNP Silicon (FHTA56) FEATURES 特点 Complementary to FHTA06 与 FHTA06 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Base Voltage 集电极-基极电压 Collector-Emitter Voltage 集电极-发射极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CBO V CEO V EBO Ic PC Tj Tstg Rating 额定值 -80 -80 -4.0 -500 300 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mW ℃ ℃ DEVICE MARKING 打标 hFE(1) FHTA56=2GM ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Symbol 符号 Test Condition 测试条件 Min 最小值 ICBO VCB=-80V,IE=0 ICEO Max 最大值 Unit 单位 — -0.1 µA VCE=-60V,IC=0 — -0.1 µA V(BR)CEO IC=-1.0mA -80 — — V V(BR)CBO IC=-1.0 mA -80 — — V V(BR)EBO IE=-100µA -4.0 — — V hFE (1) hFE (2) VCE=-1V,IC=-10mA VCE=-1V,IC=-100mA 100 100 — — — — — VCE(sat) IC=-100mA,IB=-10mA — — 0.25 V VBE VCE=-1V,IC=-100mA — — -1.2 V fT VCE=-1V,IC=-100mA, f=100MHz 50 — — MHz 21 Type 典型值 General Purpose Transistors 三极管 PNP Silicon (FHTA56R) FEATURES 特点 Complementary to FHTA06R 与 FHTA06R 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Base Voltage 集电极-基极电压 Collector-Emitter Voltage 集电极-发射极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CBO V CEO V EBO Ic PC Tj Tstg Rating 额定值 -80 -80 -4.0 -500 300 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mW ℃ ℃ DEVICE MARKING 打标 hFE(1) FHTA56R=R2G ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=-80V,IE=0 — — -0.1 µA ICEO VCE=-80V,IC=0 — — -1 µA V(BR)CEO IC=-1.0mA -80 — — V V(BR)CBO IC=-1.0 mA -80 — — V V(BR)EBO IE=-100µA -4.0 — — V hFE (1) hFE (2) VCE=-1V,IC=-10mA VCE=-1V,IC=-100mA 100 100 — — — — — VCE(sat) IC=-100mA,IB=-10mA — — 0.25 V VBE VCE=-1V,IC=-100mA — — -1.2 V fT VCE=-1V,IC=-100mA, f=100MHz 50 — — MHz 22 High Voltage Transistors 高压三极管 PNP Silicon (FHT5401) MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current 集电极电流 Symbol 符号 V CEO V CBO V EBO Ic Rating 额定值 -150 -160 -5.0 -500 Unit 单位 Vdc Vdc mAdc mAdc Symbol 符号 Max 最大值 Unit 单位 PD 225 mW Tstg -65 +150 T j 150 ℃ ℃ Tamb -65 +150 ℃ Rth j-a 556 K/W THERMAL CHARACTERISTICS 热特性 CHARACTERISTIC 特性参数 Total power dissipation 总耗散功率 （Tamb ≤ 25 C; note 1 ） storage temperature 储存温度 junction temperature 结温 operating ambient temperature 1. 工作环境温度 Thermal resistance from junction to ambient 热阻（note 1） Transistor mounted on an FR-5 printed-circuit board. DEVICE MARKING 打标 FHT5401=2L ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Symbol Test Condition Characteristic 特性参数 符号 测试条件 Collector cut-off current ICBO VCB =-120Vdc, IE=0 集电极截止电流 Emitter cut-off current IEBO VEB=-4.0Vdc,IC=0 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC current gain 直流电流增益 Collector-emitter saturation voltage 集电极-发射极饱和压降 Base-Emitter Saturation Voltage 基极-发射极饱和压降 Min 最小值 Max 最大值 Unit 单位 — -50 nA — -50 nA V(BR)CEO Ic=-1.0 mAdc, IB=0 -150 — Vdc V(BR)CBO Ic=-100μAdc, IE=0 -160 — Vdc V(BR)EBO IE=-10μAdc, IC=0 -5.0 — Vdc Ic=-1.0mAdc,VCE=-5.0Vdc Ic=-10mAdc,VCE=-5.0Vdc Ic=-50mAdc,VCE=-5.0Vdc Ic=-10mAdc IB=-1.0mAdc Ic=-50mAdc, IB =-5.0mAdc Ic=-10mAdc, IB=-1.0mAdc Ic=-50mAdc, IB =-5.0mAdc 50 60 50 — 360 — — — — — -0.2 Vdc —— -0.5 Vdc —— -1.0 Vdc —— -1.0 Vdc hFE VCEsat VBE(sat) 23 SMALL-SIGNAL CHARACTERISTICS 小信号特性 Characteristic 特性参数 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 Current-Gain-Bandwidth Product 电流增益-带宽乘积 fT Ic=-10mAdc,VCE=-10Vdc, f=100MHz 100 — 300 MHz Output Capacitance 输出电容 Cobo — — 6.0 pF Small-Signal Current Gain 小信号电流增益 hfe 40 — 300 — Noise Figure 噪声系数 NF — — 8.0 dB VCB=-10.0Vdc, IE=0,f=1.0MHz VCE=-10Vdc, IC=-1.0mAdc,f=1.0KHz VCE=-5.0Vdc,IC=-200 μAdc,RS=1.0kΩ f=1.0KHz 24 High Voltage Transistors 高压三极管 NPN Silicon (FHT5551) MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current Symbol 符号 V CEO V CBO V EBO Rating 额定值 160 180 6.0 Unit 单位 Vdc Vdc mAdc Ic 600 mAdc Symbol 符号 Max 最大值 Unit 单位 PD 225 mW Tstg -65 +150 T j 150 ℃ ℃ Tamb -65 +150 ℃ Rth j-a 556 K/W 集电极电流 THERMAL CHARACTERISTICS 热特性 CHARACTERISTIC 特性参数 Total power dissipation 总耗散功率 （Tamb ≤ 25 C; note 1 ） storage temperature 储存温度 junction temperature 结温 operating ambient temperature 工作环境温度 1. thermal resistance from junction to ambient 热阻（note 1） Transistor mounted on an FR-5 printed-circuit board. DEVICE MARKING 打标 FHT5551=G1` ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Symbol Test Condition Characteristic 特性参数 符号 测试条件 collector cut-off current VCB =120Vdc, IE=0 ICBO 集电极截止电流 emitter cut-off current发射极截止电流 CollectorEmitter Breakdown Voltage 集电极-发射极击穿电压 CollectorBase Breakdown Voltage 集电极-基极击穿电压 EmitterBase Breakdown Voltage 发射极-基极击穿电压 DC current gain 直流电流增益 collector-emitter saturation voltage 集电极-发射极饱和压降 BaseEmitter Saturation Voltage 基极-发射极饱和压降 Min 最小值 Max 最大值 Unit 单位 — 50 nA IEBO VEB=4.0Vdc,IC=0 — 50 nA V(BR)CEO Ic=1.0 mAdc, IB=0 160 — Vdc V(BR)CBO Ic=100μAdc, IE=0 180 — Vdc V(BR)EBO IE=10 μAdc, IC=0 6.0 — Vdc Ic=1.0mAdc,VCE=5.0Vdc 80 — — Ic=10mAdc,VCE=5.0Vdc 80 360 — Ic=50mAdc,VCE=5.0Vdc Ic=10mAdc,IB=1.0mAdc Ic=50mAdc,IB =5.0mAdc Ic=10mAdc,IB=1.0mAdc Ic=50mAdc,IB =5.0mAdc 30 — — 0.15 0.2 1.0 1.0 — Vdc Vdc Vdc Vdc hFE VCEsat VBE(sat) 25 —— —— —— High Voltage Transistors 高压三极管 NPN Silicon (FHTA42) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 V CEO V CBO V EBO Ic Rating 额定值 300 300 6.0 500 Unit 单位 Vdc Vdc Vdc mAdc Symbol 符号 Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHTA42=1D ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB =200Vdc, IE=0 — — 100 nAdc IEBO VEB=6.0Vdc, IC=0 — — 100 nAdc Collector-Emitter Breakdown Voltage (3) 集电极-发射极击穿电压 V(BR)CEO Ic=1.0 mAdc, IB=0 300 — — Vdc Collector-Base Breakdown Voltage 集电极-基极击穿电压 V(BR)CBO Ic=100μAdc, IE=0 300 — — Vdc 发射极-基极击穿电压 V(BR)EBO IE=100μAdc, IC=0 6.0 — — Vdc DC Current Gain 直流电流增益 hFE(1) hFE(2) hFE(3) Ic=1.0mAdc,VCE=10Vdc Ic=10mAdc,VCE=10Vdc Ic=30mAdc,VCE=10Vdc 25 40 40 — — — — — — — — — — — 0.5 Vdc — — 0.9 Vdc 50 — — MHz — — 3.0 pF Emitter-Base Breakdown Voltage Collector-Emitter Saturation V CE(sat) Ic=20mAdc,IB=2.0mAdc Voltage 集电极-发射极饱和压降 Base-Emitter On Voltage Ic=20mAdc,IB=2.0mAdc V BE(sat) 基极-发射极导通电压 Current-Gain-Bandwidth Ic=10mAdc,VCE=20Vdc fT Product 电流增益-带宽乘积 f=100MHz Output Capacitance VCB=20.0Vdc,IE=0, Cobo 输出电容 f=1.0MHz 1. FR-5=1.0×0.75×0.062 in. 2. Alumina=0.4×0.3×0.024 in. 99.5% alumina. 3. Pulse Width≤300μs; Duty Cycle≤2.0%. 26 High Voltage Transistors 高压三极管 NPN Silicon (FHTA44) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 V CEO V CBO V EBO Ic Rating 额定值 400 400 5.0 100 Unit 单位 Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5 Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 Symbol 符号 Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHTA44=1Z ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector-Cutoff Current 集电极截止电流 Emitter-Cutoff Current 发射极截止电流 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB =200Vdc, IE=0 — — 100 nAdc IEBO VEB=5.0Vdc, IC=0 — — 100 nAdc Collector-Emitter Breakdown Voltage (3) 集电极-发射极击穿电压 V(BR)CEO Ic=1.0 mAdc, IB=0 400 — — Vdc Collector-Base Breakdown Voltage 集电极-基极击穿电压 V(BR)CBO Ic=100μAdc, IE=0 400 — — Vdc 5.0 — — Vdc 70 — 200 — — — 0.5 Vdc — — 0.9 Vdc 50 — — MHz — — 6.0 pF Emitter-Base Breakdown Voltage IE=100μAdc, IC=0 V(BR)EBO 发射极-基极击穿电压 DC Current Gain 直流电流增益 hFE Ic=10mAdc,VCE=10Vdc Collector-Emitter Saturation V CE(sat) Ic=100mAdc,IB=10mAdc Voltage 集电极-发射极饱和压降 Base-Emitter On Voltage Ic=20mAdc,IB=2.0mAdc V BE(sat) 基极-发射极导通电压 Current-Gain-Bandwidth Ic=10mAdc,VCE=20Vdc fT Product 电流增益-带宽乘积 f=100MHz Output Capacitance 输出电容 Cobo VCB=20.0Vdc,IE=0,f=1.0MHz 1. FR-5=1.0×0.75×0.062 in. 2. Alumina=0.4×0.3×0.024 in. 99.5% alumina. 3. Pulse Width≤300μs; Duty Cycle≤2.0%. 27 High Voltage Transistors 高压三极管 PNP Silicon (FHTA92) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 V CEO V CBO V EBO Ic Rating 额定值 -300 -300 -5.0 -500 Unit 单位 Vdc Vdc Vdc mAdc Symbol 符号 Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHTA92=2D ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter-Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage (3) 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB =-200Vdc, IE=0 — — -250 nAdc IEBO VEB=-3.0Vdc, IC=0 — — -100 nAdc V(BR)CEO Ic=-1.0 mAdc, IB=0 -300 — — Vdc V(BR)CBO Ic=-100μAdc, IE=0 -300 — — Vdc -5.0 — — Vdc 40 25 — — — — — — — — -0.5 Vdc — — -0.9 Vdc 50 — — MHz — — 6.0 pF Emitter-Base Breakdown Voltage IE=-100μAdc, IC=0 V(BR)EBO 发射极-基极击穿电压 DC Current Gain hFE(1) Ic=-10mAdc,VCE=-10Vdc 直流电流增益 hFE(2) Ic=-30mAdc,VCE=-10Vdc Collector-Emitter Saturation V CE(sat) Ic=-20mAdc,IB=-2.0mAdc Voltage 集电极-发射极饱和压降 Base-Emitter On Voltage Ic=-20mAdc,IB=-2.0mAdc V BE(sat) 基极-发射极导通电压 Current-Gain-Bandwidth Product Ic=-10mAdc,VCE=-20Vdc fT 电流增益-带宽乘积 f=100MHz Output Capacitance VCB=-20.0Vdc,IE=0, Cobo 输出电容 f=1.0MHz 1. FR-5=1.0×0.75×0.062 in. 2. Alumina=0.4×0.3×0.024 in. 99.5% alumina. 3. Pulse Width≤300μs; Duty Cycle≤2.0%. 28 General Purpose Transistors 三极管 NPN Silicon (FHTA94) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 V CEO V CBO V EBO Ic Rating 额定值 -450 -450 -5.0 -100 Unit 单位 Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5 Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 Symbol 符号 Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHTA94=2Z ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitte Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage (3) 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter On Voltage 基极-发射极导通电压 Current-Gain-Bandwidth Product 电流增益-带宽乘积 Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB =-200Vdc, IE=0 — — -250 nAdc IEBO VEB=-3.0Vdc, IC=0 — — -100 nAdc V(BR)CEO Ic=-1.0 mAdc, IB=0 -450 — — Vdc V(BR)CBO Ic=-100μAdc, IE=0 -450 — — Vdc V(BR)EBO IE=-100μAdc, IC=0 -5.0 — — Vdc hFE(1) Ic=-10mAdc,VCE=-10Vdc 60 — 300 — V CE(sat) Ic=-20mAdc,IB=-2.0mAdc — — -0.6 Vdc V BE(sat) Ic=-20mAdc,IB=-2.0mAdc — — -0.9 Vdc 50 — — MHz — — 6.0 pF fT Cobo Ic=-10mAdc,VCE=-20Vdc f=100MHz VCB=-20.0Vdc,IE=0, f=1.0MHz 1. FR-5=1.0×0.75×0.062 in. 2. Alumina=0.4×0.3×0.024 in. 99.5% alumina. 3. Pulse Width≤300μs; Duty Cycle≤2.0%. 29 High Voltage Transistors 高压三极管 NPN Silicon (FHBF822) MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Symbol 符号 V CEO V CBO V EBO Rating 额定值 250 250 5.0 Unit 单位 Vdc Vdc mAdc 集电极电流 Ic 50 mAdc peak collector current 集电极峰值电流 ICM 100 mA peak base current 基极峰值电流 IBM 50 mA Collector Current THERMAL CHARACTERISTICS 热特性 CHARACTERISTIC 特性参数 total power dissipation 总耗散功率 （Tamb ≤ 25 C; note 1 ） storage temperature 储存温度 junction temperature 结温 operating ambient temperature 1. 工作环境温度 Thermal resistance from junction to ambient 热阻（note 1） Transistor mounted on an FR4 printed-circuit board. Symbol 符号 Max 最大值 Unit 单位 Ptot 250 mW Tstg -65 +150 T j 150 ℃ ℃ Tamb -65 +150 ℃ Rth j-a 500 K/W DEVICE MARKING 打标 FHBF822=1X ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector cut-off current 集电极截止电流 Emitter cut-off current 发射极截止电流 DC current gain 直流电流增益 Collector-Emitter saturation voltage 集电极-发射极饱和压降 Symbol 符号 ICBO Test Condition 测试条件 IE = 0; VCB = 200 V I E = 0; VCB = 200 V; Tj =150℃ Min 最小值 - Max 最大值 10 10 Unit 单位 nA µA IEBO IC = 0; VEB = 5 V - 50 nA hFE IC = 25 mA; VCE = 20 V 50 - - VCEsat IC = 30 mA; IB = 5 mA - 600 mV - 1.6 pF 60 - MHz feedback capacitance 反馈电容 Cre fT transition frequency 特征频率 fT IC = ic = 0; VCB = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz 30 General Purpose Transistors 三极管 NPN Silicon (FHT9011/FHT3879) FEATURES 特点 HF,VHF BAND AMPLIFICATION MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 30 35 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 4.0 Vdc Collector Current—Continuous 集电极电流-连续 Emitter Current 发射极电流 Ic IE 50 -50 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT9011R=RR(40～80), FHT9011O=RO(70～140),FHT9011Y=RY(120～240) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=35V,IE=0 — — 0.1 µA IEBO VEB=4V,IC=0 — — 1.0 µA hFE VCE=12V,IC=2mA 40 — 240 — VCE(sat) IC=10mA,IB=1mA — — 0.4 V VBE IC=10mA,IB=1mA — — 1.0 V fT VCE=10V,IC=1mA 100 — 400 MHz Cob VCB=10V,IE=0, f=1MHz 1.4 2.0 3.2 pF 31 General Purpose Transistors 三极管 PNP Silicon (FHT9012) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(2)=25(Min.) at VCE=-6V,IC=-400mA. Complementary to FHT9013 与 FHT9013 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 -30 -40 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO -5.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB -500 -50 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT9012O=5O(70～140),FHT9012Y=5Y(120～240),FHT9012G=5G(200～400) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=-35V,IE=0 — — -0.1 µA IEBO VEB=-5V,IC=0 — — -0.1 µA V(BR)CEO IC=-1.0mA -30 — — V V(BR)CBO IC=-100µA -40 — — V V(BR)EBO IE=-100µA -5 — — V hFE (1) hFE (2) VCE=-1V,IC=-100mA VCE=-6V,IC=-400mA 70 25 — — 400 — — V CE(sat) IC=-500mA,IB=-50mA — — -0.6 V VBE VCE=-1V,IC=-100mA — -0.8 -1.0 V fT VCE=-6V,IC=-20mA 150 200 — MHz Cob VCB=-6V,IE=0,f=1MHz — 13 — pF 32 General Purpose Transistors 三极管 NPN Silicon (FHT9013) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(2)=25(Min.) at VCE=6V,IC=400mA. Complementary to FHT9012 与 FHT9012 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 30 40 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 5.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB 500 50 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT9013O=6O(70～140),FHT9013Y=6Y(120～240),FHT9013G=6G(200～400) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=35V,IE=0 — — 0.1 µA IEBO VEB=5V,IC=0 — — 0.1 µA V(BR)CEO IC=1.0mA 30 — — V V(BR)CBO IC=100µA 40 — — V V(BR)EBO IE=100µA 5 — — V hFE (1) hFE (2) VCE=1V,IC=100mA VCE=6V,IC=400mA 70 25 — — 400 — — V CE(sat) IC=500mA,IB=50mA — — 0.6 V VBE VCE=1V,IC=100mA — 0.8 1.0 V fT VCE=6V,IC=20mA 150 300 — MHz Cob VCB=6V,IE=0,f=1MHz — 7.0 10 pF 33 General Purpose Transistors 三极管 NPN Silicon (FH9014) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ) High 高 hFE:hFE=70～700 Low Noise 低噪声:NF=1dB(Typ),10dB(Max). Complementary to FHT9015 与 FHT9015 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 45 50 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 5.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB 150 30 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 FHT9014Y=1Y(120～240) hFE(1) FHT9014O=1O(70～140), FHT9014G=1G(200～400), FHT9014L=1L(350～700) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=50V,IE=0 — — 0.1 µA IEBO VEB=5V,IC=0 — — 0.1 µA V(BR)CEO IC=1.0mA 45 — — V V(BR)CBO IC=100µA 50 — — V V(BR)EBO IE=100µA 5 — — V hFE VCE=6V,IC=2mA 70 — 700 — VCE(sat) IC=100mA,IB=5mA — — 0.6 V VBE VCE=5.0V,IC=10mA — — 0.82 V fT VCE=5.0V,IC=10mA 100 180 — MHz Cob VCB=10V,IE=0,f=1MHz — 4.0 7.0 pF 34 General Purpose Transistors 三极管 PNP Silicon (FHT9015) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ.) Low Noise 低噪声:NF=1dB(Typ.),10dB(Max.). Complementary to FHT9014 与 FHT9014 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Base Voltage 集电极-基极电压 Collector-Emitter Voltage 集电极-发射极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CBO V CEO V EBO Ic IB PC Tj Tstg Rating 额定值 -50 -45 -5.0 -150 -30 300 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mAdc mW ℃ ℃ DEVICE MARKING 打标 hFE(1) FHT9015O=3O(70～140),FHT9015Y=3Y(120～240), FHT9015G=3G(200～400), FHT9015L=3L(350～700) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=-50V,IE=0 — — -0.1 µA IEBO VEB=-5V,IC=0 — — -0.1 µA V(BR)CBO IC=-100µA -50 — — V V(BR)CEO IC=-1.0mA -45 — — V V(BR)EBO IE=-100µA -5 — — V hFE VCE=-6V,IC=-2mA 70 — 400 — VCE(sat) IC=-100mA,IB=-5mA — — 0.6 V VBE VCE=-5.0V,IC=-10mA — — -0.82 V fT VCE=-5.0V,IC=-10mA VCB=-10V,IE=0, f=1MHz 100 200 — MHz — 4.0 7.0 pF Cob 35 General Purpose Transistors 三极管 NPN Silicon (FHT9018) FEATURES 特点 High Frequency Low Noise Amplifier 高频低噪声放大 MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CEO V CBO V EBO Ic IB PC Tj Tstg Rating 额定值 19 30 5.0 50 50 300 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mAdc mW ℃ ℃ DEVICE MARKING 打标 hFE(1) FHT9018R=8R(40～80),FHT9018O=8O(70～140), FHT9018Y=8Y(100～200), FHT9018G=8G(160～300) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=20V,IE=0 — — 0.5 µA IEBO VEB=3V,IC=0 — — 0.5 µA V(BR)CBO IC=100µA 30 — — V V(BR)CEO IC=1.0mA 19 — — V V(BR)EBO IE=100µA 4 — — V hFE VCE=5V,IC=1mA 40 — 200 — VCE(sat) IC=10mA,IB=1mA — — 0.6 V VBE IB=10mA — — 1.0 V fT VCE=5V,IC=10mA 600 1100 — MHz Cob VCB=10V,IE=0,f=1MHz — 1.2 1.5 pF 36 General Purpose Transistors 三极管 NPN Silicon (FHT3880) FEATURES 特点 High Frequency Low Noise Amplifier 高频低噪声放大 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 30 40 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 4.0 Vdc Collector Current—Continuous 集电极电流-连续 Ic 20 mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT3880R=QR(40～80),FHT3880O=QO(70～140),FHT3880Y=QY(100～200) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Reverse Transfer Capacitance 反馈电容 Transition Frequency 特征频率 Noise Figure 噪声系数 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=18V,IE=0 — — 0.5 µA IEBO VEB=4V,IC=0 — — 0.5 µA V(BR)CEO IC=1.0mA 30 — — V V(BR)CBO IC=100µA 40 — — V V(BR)EBO IE=100µA 4.0 — — V hFE VCE=6V,IC=1mA 40 — 200 — V CE(sat) IC=10mA,IB=1mA — — 0.6 V Cre VCB=6V,IE=0,f=1MHz — 0.7 — pF fT VCE=6V,IC=1mA VCE=6V,IC=1mA, f=100MHz — 550 — MHz — 2.5 5.0 dB NF 37 General Purpose Transistors 三极管 NPN Silicon (FHTH10) FEATURES 特点 High Frequency Low Noise Amplifier 高频低噪声放大 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 25 30 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 3.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB 50 50 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 FHTH10=3M ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=25V,IE=0 — — 0.1 µA IEBO VEB=2V,IC=0 — — 0.1 µA V(BR)CEO IC=1.0mA 25 — — V V(BR)CBO IC=100µA 30 — — V V(BR)EBO IE=10µA 3 — — V hFE VCE=10V,IC=4mA 60 — — — V CE(sat) IC=4mA,IB=0.4mA — — 0.5 V VBE VCE=10V,IC=4mA — — 0.95 V fT VCE=10V,IC=4mA 650 1100 — MHz Cob VCB=10V,IE=0,f=1MHz — — 0.7 pF 38 General Purpose Transistors 三极管 NPN Silicon (FHT2223) FEATURES 特点 High Frequency Low Noise Amplifier 高频低噪声放大 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 20 30 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 4.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB 50 50 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT2223R=FT(40～80),FHT2223O=FO(60～120),FHT2223Y=FY(90～180) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=20V,IE=0 — — 0.1 µA IEBO VEB=3V,IC=0 — — 0.1 µA V(BR)CEO IC=1.0mA 20 — — V V(BR)CBO IC=100µA 30 — — V V(BR)EBO IE=100µA 4 — — V hFE V VCE=6V,IC=1mA 40 90 180 — IC=10mA,IB=1mA — 0.1 0.3 V VBE VCE=6V,IC=1mA — 0.72 — V fT VCE=6V,IE=-1mA 400 600 — MHz Cob VCB=6V,IE=0,f=1MHz — 1.0 — pF CE(sat) 39 General Purpose Transistors 三极管 PNP Silicon (FHT5087) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ) Low Noise 低噪声 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 -50 -50 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO -3.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB -50 -30 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 FHT5087=2Q ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 Collector Cutoff Current 集电极截止电流 ICBO VCB=-10V,IE=0 — — -10 nA V(BR)CEO IC=-1.0mA -50 — — V V(BR)CBO IC=-100µA -50 — — V V(BR)EBO IE=-100µA -3 — — V hFE VCE=-5V,IC=-100µA 250 — 800 — V CE(sat) IC=-10mA,IB=-1.0mA — — -0.3 V VBE(sat) IC=-10mA,IB=-1.0mA — — -0.85 V fT VCE=-5.0V,IC=-500µA 40 200 — MHz Cob VCB=-5V,IE=0,f=1MHz — 2.0 4.0 pF NF RS=3.0kVCE=-5.0Vdc, IC=-100μA,f=1.0KHz — 1.0 2.0 dB Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Noise Figure 噪声系数 40 General Purpose Transistors 三极管 NPN Silicon (FHT5088) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ.) Low Noise 低噪声. MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 30 35 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 4.5 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB 50 30 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 FHT5088=1Q ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Noise Figure 噪声系数 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=20V,IE=0 — — 50 nA IEBO VEB=3V,IC=0 — — 50 nA V(BR)CEO IC=1.0mA 30 — — V V(BR)CBO IC=100µA 35 — — V V(BR)EBO IE=100µA 4.5 — — V hFE VCE=5V,IC=100µA 300 — 900 — V CE(sat) IC=10mA,IB=1mA — — 0.5 V VBE(Sat) IC=10mA,IB=1mA — — 0.8 V fT VCE=5.0V,IC=500µA 50 180 — MHz Cob VCB=5V,IE=0,f=1MHz — 2.0 4.0 pF NF RS=10kΩ,VCE=5.0Vdc IC=100μAd,f=1.0KHz — 1.0 3.0 dB 41 General Purpose Transistors 三极管 NPN Silicon (FHT1623) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ.) High 高 hFE:hFE=90～600 Low Noise 低噪声:NF=1dB(Typ.),10dB(Max) MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 50 60 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 5.0 Vdc Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Ic IB 100 30 mAdc mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT1623L4=L4(90～180), FHT1623L5=L5(135～270) FHT1623L6=L6(200～400), FHT1623L7=L7(300～600) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 Emitter Cutoff Current 发射极截止电流 IEBO VEB=5V,IC=0 — — 0.1 µA V(BR)CEO IC=1.0mA 50 — — V V(BR)CBO IC=100µA 60 — — V V(BR)EBO IE=100µA 5 — — V hFE VCE=6V,IC=1mA 90 — 600 — V CE(sat) IC=100mA,IB=10mA — 0.15 0.3 V V BE(sat) IC=100mA,IB=10mA — 0.86 1.0 V VBE VCE=6.0V,IC=1mA 0.55 0.62 0.65 V fT VCE=6.0V,IC=10mA — 250 — MHz Cob VCB=6V,IE=0,f=1MHz — 3.0 — pF Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Saturation Voltage 基极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 42 General Purpose Transistors 三极管 NPN Silicon (FHT945) FEATURES 特点 Excellent hFE Linearity hFE 线性特性极好 hFE(0.1mA)/hFE(2mA)=0.95(Typ) High 高 hFE:hFE=70～700 Low Noise 低噪声:NF=1dB(Typ.),10dB(Max). MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 DEVICE MARKING 打标 hFE(1) FHT945O=CO(70～140), FHT945G=CG(200～400), Symbol 符号 V CEO V CBO V EBO Ic IB PC Tj Tstg Rating 额定值 50 60 5.0 150 30 300 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mAdc mW ℃ ℃ FHT945Y=CY(120～240) FHT945L=CL(350～700) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=60V,IE=0 — — 0.1 µA IEBO VEB=5V,IC=0 — — 0.1 µA V(BR)CEO IC=1.0mA 50 — — V V(BR)CBO IC=100µA 60 — — V V(BR)EBO IE=100µA 5 — — V hFE VCE=6V,IC=2mA IC=100mA,IB=10m A 70 — 700 — — — 0.25 V VBE VCE=5.0V,IC=10mA — — 0.82 V fT VCE=5.0V,IC=10mA VCB=10V,IE=0, f=1MHz 100 180 — MHz — 4.0 7.0 pF V CE(sat) Cob 43 General Purpose Transistors 三极管 NPN Silicon (FHT3356) FEATURES 特点 High Frequency Low Noise Amplifier 高频低噪声放大 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 12 20 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 3.0 Vdc Collector Current—Continuous 集电极电流-连续 Ic 100 mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT3356R23=R23(50～100),FHT3356R24=R24(80～160), FHT3356R25=R25(125～250) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Transition Frequency 特征频率 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=10V,IE=0 — — 1.0 µA IEBO VEB=1V,IC=0 — — 1.0 µA V(BR)CEO IC=1.0mA 12 — — V V(BR)CBO IC=10µA 20 — — V V(BR)EBO IE=10µA 3.0 — — V hFE fT VCE=10V,IC=20mA VCE=10V,IC=20mA VCB=10V,IE=0, f=1MHz VCE=10V,IC=20mA, f=1.0GHz VCE=10V,IC=7mA, f=1.0GHz 50 — 120 7 300 — — GHz — 0.55 1.0 pF — 11.5 — dB — 1.1 2.0 dB Feed-Back Capacitance 反馈电容 Cre Insertion Power Gain 插入功率增益 |S 21e |2 Noise Factor 噪声系数 NF 44 General Purpose Transistors 三极管 NPN Silicon (FHT3837) FEATURES 特点 High Frequency Low Noise Amplifier 高频低噪声放大 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 18 30 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 3.0 Vdc Collector Current—Continuous 集电极电流-连续 Ic 50 mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT3837N=CN(56～120), FHT3837P=CP(80～180),FHT3837Q=CQ(120～270), FHT3837R=CR(180～390) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃unless otherwise noted 如无特殊说明，温度为 25℃) Symbol Test Condition Characteristic 特性参数 符号 测试条件 Collector Cutoff Current VCB=10V,IE=0 ICBO 集电极截止电流 Emitter Cutoff Current VEB=2V,IC=0 IEBO 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Collector-Base Time Constant 集电极-基极时间常数 Noise Factor 噪声系数 Min 最小值 Type 典型值 Max 最大值 Unit 单位 — — 0.5 µA — — 0.5 µA V(BR)CEO IC=1.0mA 18 — — V V(BR)CBO IC=10µA 30 — — V V(BR)EBO IE=10µA 3 — — V hFE VCE=10V,IC=10mA 56 — 390 — V CE(sat) IC=20mA,IB=4mA — — 0.5 V 600 1500 — MHz — 0.9 1.5 pF 6 13 ps fT Cob rbb’・Cc NF VCE=10V,IE=10mA,f= 200MHz VCB=10V,IE=0, f=1MHz VCB=10V,IC=10mA,f= 31.8MHz VCE=12V,IC=2mA,f=2 00MHz,Rg=50Ω 45 4.5 dB General Purpose Transistors 三极管 NPN Silicon (FHT3838) FEATURES 特点 High Frequency Low Noise Amplifier 高频低噪声放大 MAXIMUM RATINGS(Ta=25℃) 最大额定值 CHARACTERISTIC 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Symbol 符号 V CEO V CBO Rating 额定值 11 20 Unit 单位 Vdc Vdc Emitter-Base Voltage 发射极-基极电压 V EBO 3.0 Vdc Collector Current—Continuous 集电极电流-连续 Ic 50 mAdc Collector Power Dissipation 集电极耗散功率 PC 300 mW Junction Temperature 结温 Tj 150 ℃ Storage Temperature Range 储存温度 Tstg -55～150 ℃ DEVICE MARKING 打标 hFE(1) FHT3838N=AN(56～120), FHT3838P=AP(80～180),FHT3838Q=AQ(120～270), FHT3838R=AR(180～390) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Collector-Base Time Constant 集电极-基极时间常数 Noise Factor 噪声系数 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=10V,IE=0 — — 0.5 µA IEBO VEB=2V,IC=0 — — 0.5 µA V(BR)CEO IC=1.0mA 11 — — V V(BR)CBO IC=10µA 20 — — V V(BR)EBO IE=10µA 3 — — V hFE VCE=10V,IC=5mA 56 — 390 — V CE(sat) IC=10mA,IB=5mA — — 0.5 V 1.4 3.2 — GHz — 0.8 1.5 pF 4 12 ps fT Cob rbb’・Cc NF VCE=10V,IE=10mA, f=500MHz VCB=10V,IE=0, f=1MHz VCB=10V,IC=10mA,f =31.8MHz VCE=6V,IC=2mA, f=500MHz,Rg=50Ω 46 3.5 dB General Purpose Transistors 三极管 Darlington Transistors NPN Silicon (FHTA14) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector Emitter Voltage 集电极发射极电压 Collector Base Voltage 集电极基极电压 Emitter Base Voltage 发射极基极电压 Collector Current—Continuous 集电极电流连续 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CEO V CBO V EBO Ic PC Tj Tstg Rating 额定值 30 30 10 300 300 150 55～150 Unit 单位 Vdc Vdc Vdc mAdc mW ℃ ℃ DEVICE MARKING 打标 FHTA14=1V ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 CollectorEmitter Breakdown Voltage 集电极发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 CollectorEmitter Saturation Voltage 集电极发射极饱和压降 BaseEmitter Voltage 基极发射极电压 Transition Frequency 特征频率 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=30V,IE=0 — — 0.1 µA IEBO VEB=10V,IC=0 — — 0.1 µA V(BR)CEO IC=100µA 30 — — V V(BR)CBO IC=100µA 30 — — V V(BR)EBO IE=1.00µA 10 — — V hFE (1) hFE (2) VCE=5V,IC=10mA VCE=5V,IC=100mA 10,000 20,000 — — — — — V CE(sat) IC=100mA,IB=0.1mA — — 1.5 V VBE VCE=5V,IC=100mA — — 2.0 V fT VCE=5V,IC=10mA 125 200 — MHz 47 General Purpose Transistors 三极管 Darlington Transistors PNP Silicon (FHTA64) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CEO V CBO V EBO Ic PC Tj Tstg Rating 额定值 -30 -30 -10 -500 300 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mW ℃ ℃ DEVICE MARKING 打标 hFE(1) FHTA64=2V ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=-30V,IE=0 — — -0.1 µA IEBO VEB=-10V,IC=0 — — -0.1 µA V(BR)CEO IC=-100µA -30 — — V V(BR)CBO IC=-100µA -30 — — V V(BR)EBO IE=-1.0µA -10 — — V hFE (1) hFE (2) VCE=-5V,IC=-10mA VCE=-5V,IC=-100mA 10,000 20,000 — — — — — V CE(sat) IC=-100mA,IB=-0.1mA — — -1.5 V VBE VCE=-5V,IC=-100mA — — -2.0 V fT VCE=-5V,IC=-10mA 125 200 — MHz 48 Low Frequency Power Amplifier Transistors 低频功率放大三极管 NPN Silicon (FHT8050) FEATURES 特点 Suitable for Driver Stage of Small Motor 小马达驱动 Complementary to FHT8550 与 FHT8550 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CEO V CBO V EBO Ic IB PC Tj Tstg Rating 额定值 25 40 5.0 800 160 300 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mAdc mW ℃ ℃ DEVICE MARKING 打标 hFE(1) FHT8050O=7O(85～200),FHT8050Y=7Y(160～300),FHT8050G=7G(280～360) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=30V,IE=0 — — 0.1 µA IEBO VEB=5V,IC=0 — — 0.1 µA V(BR)CEO IC=10mA 25 — — V V(BR)CBO IC=100µA 40 — — V V(BR)EBO IE=100µA 5 — — V hFE (1) hFE (2) VCE=1V,IC=100mA VCE=1V,IC=800mA 85 40 — — 360 — — V CE(sat) IC=500mA,IB=50mA — — 0.6 V VBE VCE=1V,IC=10mA — 0.8 1.0 V fT VCE=5V,IC=10mA VCB=10V,IE=0, f=1MHz 100 120 — MHz — 13 30 pF Cob 49 Low Frequency Power Amplifier Transistors 低频功率放大三极管 PNP Silicon (FHT8550) FEATURES 特点 Suitable for Driver Stage of Small Motor 小马达驱动 Complementary to FHT8050 与 FHT8050 互补 MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Base Current 基极电流 Collector Power Dissipation 集电极耗散功率 Junction Temperature 结温 Storage Temperature Range 储存温度 Symbol 符号 V CEO V CBO V EBO Ic IB PC Tj Tstg Rating 额定值 -25 -40 -5.0 -800 -160 300 150 -55～150 Unit 单位 Vdc Vdc Vdc mAdc mAdc mW ℃ ℃ DEVICE MARKING 打标 hFE(1) FHT8550O=9O(85～200),FHT8550Y=9Y(160～300), FHT8550G=9G(280～360) ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Emitter Cutoff Current 发射极截止电流 Collector-Emitter Breakdown Voltage 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage 集电极-发射极饱和压降 Base-Emitter Voltage 基极-发射极电压 Transition Frequency 特征频率 Collector Output Capacitance 输出电容 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICBO VCB=-30V,IE=0 — — -0.1 µA IEBO VEB=-5V,IC=0 — — -0.1 µA V(BR)CEO IC=-10mA -25 — — V V(BR)CBO IC=-100µA -40 — — V V(BR)EBO IE=-100µA -5 — — V hFE (1) hFE (2) VCE=-1V,IC=-100mA VCE=-1V,IC=-800mA 85 40 — — 360 — — VCE(sat) IC=-500mA,IB=-50mA — — -0.6 V VBE VCE=-1V,IC=-10mA — -0.8 -1.0 V fT VCE=-5V,IC=-10mA VCB=-10V,IE=0, f=1MHz 100 120 — MHz — 13 30 pF Cob 50 General Purpose Transistors 三极管 NPN Silicon (FHS2222/A) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 FHS2222 V CEO FHS2222A FHS2222 V CBO FHS2222A FHS2222 V EBO FHS2222A Rating 额定值 30 40 60 75 5 6 Unit 单位 600 mAdc Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W Ic Vdc Vdc Vdc THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5 Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 Symbol 符号 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHS2222=1B,FHS2222A=1P ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Symbol 符号 Characteristic 特性参数 FHS2222 FHS2222A Collector Cutoff Current 集电极截止电流 ICBO FHS2222 FHS2222A Emitter Cutoff Current 发射极截止电流 Collector Cutoff Current 集电极截止电流 IEBO FHS2222A ICEX FHS2222A 51 Test Condition 测试条件 VCB =50Vdc VCB =60Vdc VCB=50Vdc, IE=0,TA=125℃ VCB=60Vdc, IE=0,TA=125℃ VEB=3.0Vdc, IC=0 VCE=60Vdc, IEB(off)=3.0 Vdc Min 最小值 Type 典型值 Max 最大值 Unit 单位 — — — — 0.01 0.01 — — 10 — — 10 — — 100 nAdc — — 10 nAdc µAdc ELECTRICAL CHARACTERISTICS 电特性(Continued 续前页) Base Cutoff Current 基极截止电流 I BEX Collector-Emitter Breakdown Voltage (3) 集电极-发射极击穿电压 V(BR)CEO Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 FHS2222A FHS2222 FHS2222A V(BR)CBO V(BR)EBO FHS2222 FHS2222A FHS2222 FHS2222A FHS2222/A FHS2222/A FHS2222/A DC Current Gain 直流电流增益 hFE FHS2222A FHS2222/A FHS2222/A Collector-Emitter Saturation Voltage(3) V CE(sat) 集电极-发射极饱和压降 Base-Emitter Saturation Voltage 基极-发射极饱和压降 Current-Gain-Bandwidth Product V BE(sat) 电流增益-带宽乘积 fT Output Capacitance 输出电容 Cobo Input Capacitance 输入电容 Cibo FHS2222 FHS2222A FHS2222 FHS2222A FHS2222 FHS2222A FHS2222 FHS2222A FHS2222 FHS2222A FHS2222 FHS2222A FHS2222/A FHS2222 FHS2222A VCE=60Vdc, VEB=3.0Vdc — 20 nAdc — — Vdc — — Vdc — — Vdc 35 — — 50 — — 75 — — 35 — — 100 — 300 50 — — 30 40 — — — — — 0.6 — — — — — — — — — — — — — — 0.4 0.3 1.6 1.0 1.3 1.2 2.6 2.0 250 — — 300 — — — — 8.0 — — 30 — — 25 — — — — — — — — 10 25 225 60 — Ic=10 mAdc, IB=0 65 Ic=10μAdc, IE=0 IE=10μAdc, IC=0 Ic=0.1mAdc, VCE=10Vdc Ic=1mAdc, VCE=10Vdc Ic=10mAdc, VCE=10Vdc Ic=10mAdc, VCE=10Vdc TA=-55℃ Ic=150mAdc, VCE=10Vdc Ic=150mAdc, VCE=10Vdc Ic=500mAdc, VCE=10Vdc 80 50 5 6 Ic=150mAdc, IB=15mAdc Ic=500mAdc, IB=50mAdc Ic=150mAdc, IB=15mAdc Ic=500mAdc, IB=50mAdc Ic=10mAdc, VCE=20Vdc, f=100MHz VCB=10Vdc, IE=0,f=1.0MHz VEB=0.5Vdc, IC=0, f=1.0MHz 45 — Vdc Vdc MHz pF pF SWITCHING CHARACTERISTICS 开关特性 Delay Time 延迟时间 Rise Time 上升时间 Storage Time 储存时间 Fall Time 下降时间 1. 2. 3. td tr ts tf VCC=30Vdc,VBE=-0.5Vdc, IC=150mAdc,IB1=15mAdc VCC=30Vdc,IC=150mAdc, IB1=IB2=15mAdc FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width≤300μs; Duty Cycle≤2.0%. 52 nS nS General Purpose Transistors 三极管 PNP Silicon (FHS2907/A) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 FHS2907 V CEO FHS2907A Rating 额定值 -40 -60 Unit 单位 Vdc V CBO FHS2907/A -60 Vdc V EBO FHS2907/A -5 Vdc -600 mAdc Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W Ic THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5 Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 Symbol 符号 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHS2907=2B,FHS2907A=2F ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Symbol 符号 Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Collector Cutoff Current 集电极截止电流 Collector-Emitter BreakdownVoltage (3) 集电极-发射极击穿电压 Test Condition 测试条件 ICBO FHS2907 FHS2907A FHS2907 FHS2907A ICEX FHS2907A FHS2907 V(BR)CEO FHS2907A 53 VCB =-50Vdc VCB=-50Vdc, IE=0,TA=125℃ VCE=-30Vdc, IEB=-0.5Vdc Ic=-10 mAdc, IB=0 Min 最小值 Type 典型值 Max 最大值 Unit 单位 — — — — — — — — -0.02 -0.01 -20 -10 µAdc — — -50 nAdc — — Vdc -40 -60 ELECTRICAL CHARACTERISTICS 电特性(Continued 续前页) Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 DC Current Gain 直流电流增益 V(BR)CBO V(BR)EBO hFE FHS2907 FHS2907A FHS2907 FHS2907A FHS2907 FHS2907A FHS2907 FHS2907A FHS2907 FHS2907A FHS2907 FHS2907A FHS2907 FHS2907A Collector-Emitter Saturation Voltage(3) 集电极-发射极饱和压降 Base-Emitter Saturation Voltage 基极-发射极饱和压降 V CE(sat) V BE(sat) FHS2907/A FHS2907/A Current-Gain-Bandwidth Product 电流增益-带宽乘积 fT FHS2907/A Output Capacitance 输出电容 Cobo FHS2907/A Input Capacitance 输入电容 Cibo FHS2907/A Ic=-10μAdc, IE=0 IE=-10μAdc, IC=0 Ic=-0.1mAdc, VCE=-10Vdc Ic=-1mAdc, VCE=-10Vdc Ic=-10mAdc, VCE=-10Vdc Ic=-150mAdc, VCE=-10Vdc Ic=-500mAdc, VCE=-10Vdc Ic=-150mAdc, IB=-15mAdc Ic=-500mAdc, IB=-50mAdc Ic=-150mAdc, IB=-15mAdc Ic=-500mAdc, IB=-50mAdc Ic=-50mAdc, VCE=-20Vdc, f=100MHz VCB=-10Vdc, IE=0,f=1.0MHz VEB=-2.0Vdc, IC=0, f=1.0MHz -60 — — Vdc -5.0 — — Vdc 35 75 50 100 75 100 100 — — — — — — — — — — — — — 300 100 — 300 30 50 — — — — — — -0.4 — Vdc — — -1.6 — — -1.3 Vdc — — -2.6 200 — — MHz — — 8.0 pF — — 30 pF — — — — — — — — — — — — 45 10 40 80 30 100 SWITCHING CHARACTERISTICS 开关特性 Turn-On Time 开启时间 Delay Time 延迟时间 Rise Time 上升时间 Storage Time 储存时间 Fall Time 下降时间 Turn-Off Time 关断时间 1. 2. 3. ton td tr ts tf toff VCC=-30Vdc, IC=-150mAdc,IB1=-15mAdc VCC=-6.0Vdc,IC=-150mAdc, IB1=IB2=-15mAdc FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width≤300μs; Duty Cycle≤2.0%. 54 nS nS General Purpose Transistors 三极管 NPN Silicon (FHS3904) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 Rating 额定值 Unit 单位 V CEO 40 Vdc V CBO 60 Vdc V EBO 5 Vdc Ic 200 mAdc Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5 Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 Symbol 符号 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHS3904=1AM ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Base Cutoff Current 基极截止电流 Collector-Emitter BreakdownVoltage (3) 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICEX VCE=30Vdc,VEB=3.0Vdc — — 50 nAdc I BEX VCE=30Vdc, VEB=3.0Vdc — — 50 nAdc V(BR)CEO Ic=1.0 mAdc, IB=0 40 — — Vdc V(BR)CBO Ic=10μAdc, IE=0 60 — — Vdc V(BR)EBO IE=10μAdc, IC=0 5 — — Vdc 55 ELECTRICAL CHARACTERISTICS 电特性(Continued 续前页) DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage(3) 集电极-发射极饱和压降 Base-Emitter Saturation Voltage 基极-发射极饱和压降 Current-Gain-Bandwidth Product 电流增益-带宽乘积 Output Capacitance 输出电容 Input Capacitance 输入电容 Input Impedance 输入阻抗 Voltage Feedback Ratio 电压反馈系数 Small-Signal Current Gain 小信号电流增益 Output Admittance Noise Figure hFE V CE(sat) V BE(sat) fT Cobo Cibo hie hre hfe *hoe 输出导纳 NF 噪声系数 Ic=0.1mAdc,VCE=1.0Vdc Ic=1.0mAdc,VCE=1.0Vdc Ic=10mAdc,VCE=1.0Vdc Ic=50mAdc,VCE=1.0Vdc Ic=100mAdc,VCE=1.0Vd c Ic=10mAdc,IB=1.0mAdc 40 70 100 60 — — — — — — 300 — 30 — — — — 0.2 Ic=50mAdc,IB=5.0mAdc — — 0.3 Ic=10mAdc,IB=1.0mAdc 0.65 — 0.85 Ic=50mAdc,IB=5.0mAdc — — 0.95 300 — — MHz — — 4.0 pF — — 8.0 pF 1.0 — 10 kΩ 0.5 — 8.0 ×10-4 100 — 400 1.0 — 40 μmhos — — 5.0 dB — — — — — — — — Ic=10mAdc,VCE=20Vdc, f=100MHz VCB=5.0Vdc,IE=0, f=1.0MHz VEB=0.5Vdc,IC=0, f=1.0MHz VCE=10Vdc,IC=1.0mAdc, f=1.0KHz VCE=10Vdc,IC=1.0mAdc, f=1.0KHz VCE=10Vdc,IC=1.0mAdc, f=1.0KHz VCE=10Vdc,IC=1.0mAdc, f=1.0KHz VCE=5.0Vdc, IC=100μAdc, f=1.0KHz — Vdc Vdc SWITCHING CHARACTERISTICS 开关特性 Delay Time 延迟时间 Rise Time 上升时间 Storage Time 储存时间 Fall Time 下降时间 1. 2. 3. td tr ts tf VCC=3.0Vdc,VBE=-0.5Vdc, IC=10mAdc,IB1=1.0mAdc VCC=3.0Vdc,IC=10mAdc, IB1=IB2=1.0mAdc FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width≤300μs; Duty Cycle≤2.0%. 56 35 35 200 50 nS nS General Purpose Transistors 三极管 PNP Silicon (FHS3906) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 Rating 额定值 Unit 单位 V CEO -40 Vdc V CBO -40 Vdc V EBO -5 Vdc Ic -200 mAdc Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5 Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 Symbol 符号 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHS3906=2A ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Base Cutoff Current 基极截止电流 Collector-Emitter BreakdownVoltage (3) 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICEX VCE=-30Vdc,VEB=-3.0Vdc — — -50 nAdc I BEX VCE=-30Vdc,VEB=-3.0Vdc — — -50 nAdc V(BR)CEO Ic=-1.0 mAdc, IB=0 -40 — — Vdc V(BR)CBO Ic=-10μAdc, IE=0 -40 — — Vdc V(BR)EBO IE=-10μAdc, IC=0 -5 — — Vdc 57 ELECTRICAL CHARACTERISTICS 电特性(Continued 续前页) DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage(3) 集电极-发射极饱和压降 Base-Emitter Saturation Voltage 基极-发射极饱和压降 Current-Gain-Bandwidth Product 电流增益-带宽乘积 Output Capacitance 输出电容 Input Capacitance 输入电容 Input Impedance 输入阻抗 Voltage Feedback Ratio 电压反馈系数 Small-Signal Current Gain 小信号电流增益 Output Admittance Noise Figure 输出导纳 噪声系数 hFE V CE(sat) V BE(sat) fT Cobo Cibo hie hre hfe *hoe NF Ic=-0.1mAdc,VCE=-1.0Vdc Ic=-1.0mAdc,VCE=-1.0Vdc Ic=-10mAdc,VCE=-1.0Vdc Ic=-50mAdc,VCE=-1.0Vdc Ic=-100mAdc,VCE=-1.0Vdc Ic=-10mAdc,IB=-1.0mAdc 60 80 100 60 30 — — — — — — — — — 300 — — -0.25 Ic=-50mAdc,IB=-5.0mAdc — — -0.4 Ic=-10mAdc,IB=-1.0mAdc -0.65 — -0.85 Ic=-50mAdc,IB=-5.0mAdc — — -0.95 250 — — MHz — — 4.5 pF — — 10 pF 1.0 — 10 kΩ 0.5 — 8.0 ×10-4 100 — 400 1.0 — 60 μmhos — — 4.0 dB — — — — — — — — Ic=-10mAdc,VCE=-20Vdc, f=100MHz VCB=-5.0Vdc,IE=0, f=1.0MHz VEB=-0.5Vdc,IC=0, f=1.0MHz VCE=-10Vdc,IC=-1.0mAdc, f=1.0KHz VCE=-10Vdc,IC=-1.0mAdc f=1.0KHz VCE=-10Vdc,IC=-1.0mAdc, f=1.0KHz VCE=-10Vdc, IC=-1.0mAdc,f=1.0KHz VCE=-5.0Vdc,IC=-100μA, RS=1.0KΩ,f=1.0KHz — Vdc Vdc SWITCHING CHARACTERISTICS 开关特性 Delay Time 延迟时间 Rise Time 上升时间 Storage Time 储存时间 Fall Time 下降时间 1. 2. 3. td tr ts tf VCC=-3.0Vdc,VBE=0.5Vdc, IC=-10mAdc,IB1=-1.0mAdc VCC=-3.0Vdc,IC=-10mAdc, IB1=IB2=-1.0mAdc FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width≤300μs; Duty Cycle≤2.0%. 58 35 35 225 75 nS nS General Purpose Transistors 三极管 NPN Silicon (FHS4401) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 Rating 额定值 Unit 单位 V CEO 40 Vdc V CBO 60 Vdc V EBO 6 Vdc Ic 600 mAdc Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5 Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 Symbol 符号 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHS4401=2X ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Base Cutoff Current 基极截止电流 Collector-Emitter BreakdownVoltage (3) 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Symbol 符号 Test Condition 测试条件 Min 最小值 Type 典型值 Max 最大值 Unit 单位 ICEX VCE=35Vdc,VEB=0.4Vdc — — 100 nAdc I BEX VCE=35Vdc,VEB=0.4Vdc — — 100 nAdc V(BR)CEO Ic=1.0 mAdc, IB=0 40 — — Vdc V(BR)CBO Ic=100μAdc, IE=0 60 — — Vdc 59 ELECTRICAL CHARACTERISTICS 电特性(Continued 续前页) Emitter-Base Breakdown Voltage 发射极-基极击穿电压 V(BR)EBO DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage(3) 集电极-发射极饱和压降 Base-Emitter Saturation Voltage 基极-发射极饱和压降 Current-Gain-Bandwidth Product 电流增益-带宽乘积 Output Capacitance 输出电容 Input Capacitance 输入电容 Input Impedance 输入阻抗 Voltage Feedback Ratio 电压反馈系数 Small-Signal Current Gain 小信号电流增益 Output Admittance hFE V CE(sat) V BE(sat) fT Cobo Cibo hie hre hfe hoe 输出导纳 IE=100μAdc, IC=0 6 — Ic=0.1mAdc,VCE=1.0Vdc Ic=1.0mAdc,VCE=1.0Vdc Ic=10mAdc,VCE=1.0Vdc Ic=150mAdc,VCE=2.0Vd c Ic=500mAdc,VCE=2.0Vd c Ic=150mAdc,IB=15mAdc 20 40 80 — — — — — — 100 — 300 40 — — — — 0.4 Ic=500mAdc,IB=50mAdc — — 0.75 Ic=150mAdc,IB=15mAdc 0.75 — 0.95 Ic=500mAdc,IB=50mAdc — — 1.2 250 — — MHz — — 6.5 pF — — 30 pF 1.0 — 15 kΩ 0.5 — 8.0 ×10-4 100 — 500 — 1.0 — 100 μmhos — — — — — — — — Ic=20mAdc,VCE=10Vdc, f=100MHz VCB=5.0Vdc,IE=0, f=1.0MHz VEB=0.5Vdc,IC=0, f=1.0MHz VCE=10Vdc,IC=1.0mAdc, f=1.0KHz VCE=10Vdc,IC=1.0mAdc, f=1.0KHz VCE=10Vdc,IC=1.0mAdc, f=1.0KHz VCE=10Vdc,IC=1.0mAdc, f=1.0KHz — Vdc — Vdc Vdc SWITCHING CHARACTERISTICS 开关特性 Delay Time 延迟时间 Rise Time 上升时间 Storage Time 储存时间 Fall Time 下降时间 1. 2. 3. td tr ts tf VCC=30Vdc,VBE=2.0Vdc, IC=150mAdc,IB1=15mAdc VCC=30Vdc,IC=150mAdc, IB1=IB2=15mAdc FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width≤300μs; Duty Cycle≤2.0%. 60 15 20 225 30 nS nS General Purpose Transistors 三极管 PNP Silicon (FHS4403) MAXIMUM RATINGS(Ta=25℃) 最大额定值 Characteristic 特性参数 Collector-Emitter Voltage 集电极-发射极电压 Collector-Base Voltage 集电极-基极电压 Emitter-Base Voltage 发射极-基极电压 Collector Current—Continuous 集电极电流-连续 Symbol 符号 Rating 额定值 Unit 单位 V CEO -40 Vdc V CBO -40 Vdc V EBO -5 Vdc Ic -600 mAdc Max 最大值 Unit 单位 225 mW 1.8 556 mW/℃ ℃/W 300 mW 2.4 417 150 -55 to +150 mW/℃ ℃/W THERMAL CHARACTERISTICS 热特性 Characteristic 特性参数 Total Device Dissipation 总耗散功率 FR-5 Board(1) (TA=25℃ 环境温度 25℃) Derate above 25℃ 超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Total Device Dissipation 总耗散功率 Alumina Substrate 氧化铝衬底,(2) TA=25℃ Derate above 25℃超过 25℃递减 Thermal Resistance Junction to Ambient 热阻 Junction and Storage Temperature 结温和储存温度 Symbol 符号 PD RΘJA PD RΘJA TJ , Tstg ℃ DEVICE MARKING 打标 FHS4403=2T ELECTRICAL CHARACTERISTICS 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃) Characteristic 特性参数 Collector Cutoff Current 集电极截止电流 Base Cutoff Current 基极截止电流 Collector-Emitter BreakdownVoltage (3) 集电极-发射极击穿电压 Collector-Base Breakdown Voltage 集电极-基极击穿电压 Emitter-Base Breakdown Voltage 发射极-基极击穿电压 Symbol 符号 Test Condition 测试条件 VCE=-35Vdc, VEB=-0.4Vdc VCE=-35Vdc, VEB=-0.4Vdc Min 最小值 Type 典型值 Max 最大值 Unit 单位 — — -100 nAdc — — -100 nAdc V(BR)CEO Ic=-1.0 mAdc, IB=0 -40 — — Vdc V(BR)CBO Ic=-100μAdc, IE=0 -40 — — Vdc V(BR)EBO IE=-100μAdc, IC=0 -5 — — Vdc ICEX I BEX 61 ELECTRICAL CHARACTERISTICS 电特性(Continued 续前页) DC Current Gain 直流电流增益 Collector-Emitter Saturation Voltage(3) 集电极-发射极饱和压降 Base-Emitter Saturation Voltage 基极-发射极饱和压降 hFE V CE(sat) V BE(sat) Current-Gain-Bandwidth Product 电流增益-带宽乘积 Output Capacitance 输出电容 Input Capacitance 输入电容 Input Impedance 输入阻抗 Voltage Feedback Ratio 电压反馈系数 Small-Signal Current Gain 小信号电流增益 Output Admittance 输出导纳 fT Cobo Cibo hie hre hfe hoe Ic=-0.1mAdc, VCE=-1.0Vdc Ic=-1.0mAdc, VCE=-1.0Vdc Ic=-10mAdc,VCE=-1.0Vdc Ic=-150mAdc, VCE=-2.0Vdc Ic=-500mAdc, VCE=-2.0Vdc Ic=-150mAdc, IB=-15mAdc Ic=-500mAdc, IB=-50mAdc Ic=-150mAdc, IB=-15mAdc Ic=-500mAdc, IB=-50mAdc Ic=-20mAdc,VCE=-10Vdc, f=100MHz VCB=-10Vdc,IE=0, f=1.0MHz VEB=-0.5Vdc,IC=0, f=1.0MHz VCE=-10Vdc,IC=-1.0mAdc f=1.0KHz VCE=-10Vdc,IC=-1.0mAdc f=1.0KHz VCE=-10Vdc,IC=-1.0mAdc f=1.0KHz VCE=-10Vdc,IC=-1.0mAdc f=1.0KHz 30 — — 30 — — 100 — — 100 — 300 20 — — — — -0.4 — — -0.75 -0.75 — -0.95 — Vdc Vdc — — -1.3 200 — — MHz — — 8.5 pF — — 30 pF 1.0 — 15 kΩ 0.5 — 8.0 ×10-4 100 — 500 1.0 — 100 — — — — — — — — μmhos SWITCHING CHARACTERISTICS 开关特性 Delay Time 延迟时间 Rise Time 上升时间 Storage Time 储存时间 Fall Time 下降时间 1. 2. 3. td tr ts tf VCC=-30Vdc,VBE=-2.0Vdc, IC=-150mAdc,IB1=-15mAdc VCC=-30Vdc,IC=-150mAdc, IB1=IB2=-15mAdc FR-5=1.0×0.75×0.062 in. Alumina=0.4×0.3×0.024 in. 99.5% alumina. Pulse Width≤300μs; Duty Cycle≤2.0%. 62 15 20 225 30 nS nS