KIA10TB60BP

KIA FAST RECOVERY DIODE 10A，600V 10TB60 SEMICONDUCTORS 1.Features This series are state−of−the−art devices designed for use in switching power supplies, inverters and as free wheeling diodes. 2. Features  High efficiency, low VF  High current capability  High reliability  High surge current capability  Low power loss.  For use in low voltage, high frequency inventor, free wheeling, and polarity protection application 3. Mechanical Characteristics  Case: TO-220 Molded plastic  Epoxy: UL 94V-0 rate flame retardant  Terminals: Pure tin plated, lead free. solderable per MIL-STD-202, Method 208 guaranteed  Polarity: As marked  High temperature soldering guaranteed: 260oC/10 seconds .16”,(4.06mm) from case.  Weight: 2.24 grams 4. Pin configuration 1 of 2 Pin Function 1 Cathode 3 Anode Rev 1.1 JAN 2014 KIA FAST RECOVERY DIODE 10A，600V 10TB60 SEMICONDUCTORS 5. Maximum ratings Parameter Symbol Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current . TC = 100ºC Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method ) (TJ=25°C,unless otherwise notes) Rating Units VRRM VRMS VDC 600 620 600 V V V I(AV) 10.0 A IFSM 125 A Maximum instantaneous forward voltage @ 10A VF 1.8 V Maximum DC reverse current @ TA=25ºC at rated DC blocking voltage @ TA=100ºC IR 10.0 400 uA uA Maximum reverse recovery time 1) Trr 45 nS Cj 50 pF RθJC TJ TSTG 3.5 -65 to +150 -65 to +150 ºC/W ºC ºC Typical junction capacitance 2) 3) Typical thermal resistance Operating temperature range Storage temperature range Notes: 1. Reverse recovery test conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 V D.C. 3. Mounted on heatsink size of 2” x 3” x 0.25” Al-plate. 2 of 2 Rev 1.1 JAN 2014