SESD5Z12V

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SESD5Z Series Transient Voltage Suppressors for ESD Protection General Description Revision:A Features The SESD5Z Series are designed to protect voltage z Small Body Outline Dimensions sensitive components from ESD and transient voltage z Low Body Height events. Excellent clamping capability, low leakage, and z Stand−off Voltage: 3.3 V − 12.0 V fast response time, make these parts ideal for ESD z Peak Power up to 200 Watts @ 8 x 20 µs z Low Leakage z Response Time is Typically < 1 ns protection on designs where board space is at a premium. Pulse Applications z Cellular phones Complies with the following standards z Portable devices IEC61000-4-2 z Digital cameras Level 4 z Power supplies 15 kV (air discharge) 8 kV(contact discharge) MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) Functional diagram SOD-523 Absolute Ratings (Tamb=25°C ) Symbol Parameter Value Units PPP Peak Pulse Power (tp = 8/20μs) 200 W TL Maximum lead temperature for soldering during 10s 260 °C Tstg Storage Temperature Range -55 to +155 °C Top Operating Temperature Range -40 to +125 °C Tj Maximum junction temperature 150 °C ±15 ±8 kV 40 A 25 kV 400 V IEC61000-4-2 (ESD) air discharge contact discharge IEC61000-4-4 (EFT) ESD Voltage Per Human Body Model Per Machine Model ShangHai Sino-IC Microelectronics Co., Ltd. 1. SESD5Z Series Electrical Parameter Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IT VBR Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Test Current Breakdown Voltage @ IT IF Forward Current VF Forward Voltage @ IF Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA Part Numbers VBR VF IT VRWM IR Max. C IF Typ. 0v Min. Typ. Max. V V V mA V µA V mA pF SESD5Z3V3 5.0 6.0 7.0 1 3.0 1 1.25 200 35 SESD5Z5V 6.0 6.6 7.1 1 5.0 1 1.25 200 30 SESD5Z6V 6.8 7.4 7.9 1 6.0 1 1.25 200 30 SESD5Z7V 7.5 8.1 8.6 1 7.0 1 1.25 200 25 SESD5Z12V 13.5 14.2 15.0 1 12.0 1 1.25 200 25 bias *Surge current waveform per Figure 1. 1. VBR is measured with a pulse test current IT at an ambient temperature of 25℃． Typical Characteristics Fig1. Pulse Waveform ShangHai Sino-IC Microelectronics Co., Ltd. Fig2.Power Derating Curve 2. SESD5Z Series Application Note Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient to a low enough level such that damage to the protected semiconductor is prevented. Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection elements, connected between the signal line to ground. As the transient rises above the operating voltage of the device, the TVS becomes a low impedance path diverting the transient current to ground. The SESD5Z Series is the ideal board evel protection of ESD sensitive semiconductor components. The tiny SOD-523 package allows design flexibility in the design of high density boards where the space saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD. ShangHai Sino-IC Microelectronics Co., Ltd. 3. SESD5Z Series SOD-523 Mechanical Data Dim Millimeters INCHES MIN NOM MAX MIN NOM MAX A 1.10 1.20 1.30 0.043 0.047 0.051 B 0.70 0.80 0.90 0.028 0.032 0.035 C 0.50 0.60 0.70 0.020 0.024 0.028 D 0.25 0.30 0.35 0.010 0.012 0.014 J 0.07 0.14 0.20 0.0028 0.0055 0.0079 K 0.15 0.20 0.25 0.006 0.008 0.010 S 1.50 1.60 1.70 0.059 0.063 0.067 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 4.