PESDHC2FD4V5B
ESD Protector
Description
The PESDHC2FD4V5B protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage induced
transient events. They feature large cross-sectional area junctions for conducting
high transient currents, offer desirable electrical characteristics for board level
protection, such as fast response time, low operating voltage. It gives designer
the flexibility to protect one bi-directional line in applications where arrays are not
practical.
Feature
Applications
300W peak pulse power per line (tP = 8/20μs)
Cellular phones
DFN1006-2L package
Portable devices
Replacement for MLV(0402)
Digital cameras
Bidirectional configurations
Power supplies
Response time is typically < 1ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to
IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
IEC61000-4-5 (Surge) 30A (8/20us)
Mechanical Characteristics
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Electronics Parameter
Symbol
Parameter
VRWM
Peak Reverse Working Voltage
IR
Reverse Leakage Current @ VRWM
VTRIG
Reverse trigger Current
VHOLD
Reverse holding voltage
IT
Test Current
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
PPP
Peak Pulse Power
CJ
Junction Capacitance
IF
Forward Current
VF
Forward Voltage @ IF
Rev.06.6
I
IPP
VHOLD
VTRIG VRWM
VC
IT
IR
IR
IT
VRWM
VC
VTRIG
VHOLD
IPP
1
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V
ESD Protector
PESDHC2FD4V5B
Electrical characteristics per line@25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Peak Reverse Working Voltage
VRWM
Reverse trigger voltage
VTRIG
ITRIG=2uA
4.7
Reverse holding voltage
VHOLD
IHOLD=50mA
4.6
Reverse Leakage Current
IR
VRWM = 4.5V T=25℃
Maximum Reverse Peak Pulse Current
IPP
Clamping Voltage
VC
Clamping Voltage
Typ.
Max.
Units
4.5
V
V
1.0
μA
33
A
IPP=1A
5.8
V
VC
IPP=5A
6.5
V
Clamping Voltage
VC
IPP=30A
12
V
Junction Capacitance
Cj
80
pF
28
VR=0V
f = 1MHz
60
30
70
Absolute maximum rating@25℃
Rating
Symbol
Value
Units
Peak Pulse Power (tp=8/20μs)
Ppp
300
W
Operating Temperature
TJ
-55 to +150
℃
Storage Temperature
TSTG
-55 to +150
℃
Typical Characteristics
100
80
80
% Of Rated Power
IPP – Peak Pulse Current - % of IPP
tf=8μs
100
60
tP =20μs(IPP /2)
40
20
40
20
0
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
TL – Lead Temperature - ℃
t - Time -μs
Fig 1.Pulse Waveform
Rev.06.6
60
Fig 2.Power Derating Curve
2
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ESD Protector
PESDHC2FD4V5B
20
16
4.6
12
IR(nA)
Breakdown Voltage (V) (VZ @ IZ)
4.8
4.4
8
4.2
4
4.0
3.8
-55
0
+25
+150
0
Temperature (ºC)
25
50
75
100
125
150
Temperature (ºC)
Fig 3.Typical Breakdown Voltage vs. Temperature
Fig 4.Typical Leakage Current vs. Temperature
10000
20.0
15.0
Peak Pulse Power (W)
VC-Clamping Voltage (V)
Pulse waveform: tp=8/20us
10.0
5.0
1000
100
10
0
0
8
16
24
32
1
10
100
1000
Pulse Duration(us)
IPP-Peak pulse current (A)
Fig 5. Clamping voltage vs. Peak pulse current
Fig 6. Non-Repetitive Peak Pulse Power vs. Pulse time
20
TLP Current(A)
12
4
-4
Z0=50Ω
tr=2ns
tp=100ns
-12
-20
-8
-4
0
TLP Voltage(v)
4
8
Fig 7. TLP Measurement
Rev.06.6
3
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ESD Protector
PESDHC2FD4V5B
Solder Reflow Recommendation
Peak Temp=257℃, Ramp Rate=0.802deg. ℃/sec
280
240
200
160
120
80
40
0
0
60
30
90
120
150
180
240
210
270
300
330
360
390
420
450
480
Time (sec)
PCB Design
For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD
protection. Novices in the area of ESD protection should take following suggestions to heart:
Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.
Do not make false economies and save copper for the ground connection.
Place via holes to ground as close as possible to the anode of the TVS diode.
Use as many via holes as possible for the ground connection.
Keep the length of via holes in mind! The longer the more inductance they will have.
Product dimension (DFN1006-2L)
Inches
A
B
C
R
D
E
MIN
MAX
MIN
MAX
A
0.013
0.020
0.34
0.50
B
0.000
0.002
0.00
0.05
C
0.037
0.042
0.95
1.075
D
0.021
0.026
0.55
0.675
E
0.017
0.021
0.45
0.55
F
0.007
0.011
0.20
0.30
H
R
F
Rev.06.6
Millimeters
Dim
0.015Typ.
0.001
0.005
0.40Typ.
0.05
0.15
H
4
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ESD Protector
PESDHC2FD4V5B
1.10
0.60
0.40
Unit:mm
Ordering information
Device
Package
Shipping
PESDHC2FD4V5B
DFN1006-2L (Pb-Free)
10000 / Tape & Reel
Rev.06.6
5
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ESD Protector
PESDHC2FD4V5B
IMPORTANT NOTICE
and
are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi
reserves the right to make changes without further notice to any products herein. Prisemi makes
no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Prisemi
assume any liability arising out of the application or use of any
product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. “Typical” parameters which may be provided in
Prisemi data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. Prisemi does not
convey any license under its patent rights nor the rights of others. The products listed in this
document are designed to be used with ordinary electronic equipment or devices, Should you
intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical
instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), please be sure to consult with our sales representative in advance.
Website: http://www.prisemi.com
For additional information, please contact your local Sales Representative.
©Copyright 2009, Prisemi Electronics
is a registered trademark of Prisemi Electronics.
All rights are reserved.
Rev.06.6
6
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