MMBTSC1815G(HF)

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Ptot 200 mW Tj 150 O Tstg - 55 to + 150 O Power Dissipation Junction Temperature Storage Temperature Range C C Characteristics at Tamb=25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE hFE hFE 70 120 200 350 25 140 240 400 700 - - Collector Base Cutoff Current at VCB = 60 V ICBO - 100 nA Emitter Base Cutoff Current at VEB = 5 V IEBO - 100 nA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA VCE(sat) - 0.25 V Base Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA VBE(sat) - 1 V Gain Bandwidth Product at VCE = 10 V, IC = 1 mA fT 80 - MHz Output Capacitance at VCB = 10 V, f = 1 MHz Cob - 3 pF DC Current Gain at VCE = 6 V, IC = 2 mA Current Gain Group at VCE = 6 V, IC = 150 mA O Y G L SEMTECH ELECTRONICS LTD. ® Dated：16/03/2015 Rev：01 MMBTSC1815 SEMTECH ELECTRONICS LTD. ® Dated：16/03/2015 Rev：01