2N7002PV

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ „ „ „ Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 60 V - - ±20 V - - 350 mA - 1 1.6 Ω Per transistor VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage Tamb = 25 °C ID drain current Tamb = 25 °C; VGS = 10 V RDSon drain-source on-state resistance Tj = 25 °C; VGS = 10 V; ID = 500 mA [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 S1 source1 2 G1 gate1 3 D2 drain2 4 S2 source2 5 G2 gate2 6 D1 drain1 Simplified outline 6 5 4 1 2 3 Graphic symbol D1 S1 D2 G1 S2 G2 msd901 3. Ordering information Table 3. Ordering information Type number 2N7002PV Package Name Description Version - plastic surface-mounted package; 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code 2N7002PV ZF 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tamb = 25 °C - 60 V - ±20 V Tamb = 25 °C - 350 mA Tamb = 100 °C - 250 mA - 1.2 A Per transistor VDS drain-source voltage VGS gate-source voltage Tamb = 25 °C ID drain current VGS = 10 V IDM 2N7002PV Product data sheet peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 [1] © NXP B.V. 2010. All rights reserved. 2 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb = 25 °C Min Max Unit [2] - 330 mW [1] - 390 mW - 1090 mW 350 mA Tsp = 25 °C Source-drain diode source current Tamb = 25 °C [1] - Ptot total power dissipation Tamb = 25 °C [2] - Tj junction temperature Tamb ambient temperature Tstg storage temperature IS Per device mW °C −55 +150 °C −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa001 120 Pder (%) 017aaa002 120 Ider (%) 80 80 40 40 0 −75 −25 25 75 0 −75 125 175 Tamb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. 500 150 Product data sheet 25 75 125 175 Tamb (°C) ID I der = -------------------- × 100 % I D ( 25°C ) Normalized total power dissipation as a function of ambient temperature 2N7002PV −25 Fig 2. Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 3 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 017aaa063 10 ID (A) 1 (1) (2) 10−1 (3) (4) (5) 10−2 (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - 330 380 K/W [2] - 280 320 K/W - - 115 K/W - - 250 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Per device Rth(j-a) 2N7002PV Product data sheet thermal resistance from junction to ambient in free air [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 4 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 017aaa064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002PV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 5 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 1.1 1.75 2.4 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 10 μA - - 100 nA - 1.3 2 Ω - 1 1.6 Ω - 400 - mS - 0.6 0.8 nC Per transistor Static characteristics V(BR)DSS drain-source breakdown ID = 10 μA; VGS = 0 V voltage VGS(th) gate-source threshold voltage ID = 250 μA; VDS = VGS IDSS drain leakage current VDS = 60 V; VGS = 0 V IGSS gate leakage current RDSon drain-source on-state resistance VGS = ±20 V; VDS = 0 V [1] VGS = 5 V; ID = 50 mA VGS = 10 V; ID = 500 mA forward transconductance gfs VDS = 10 V; ID = 200 mA [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time ID = 300 mA; VDS = 30 V; VGS = 4.5 V VGS = 0 V; VDS = 10 V; f = 1 MHz VDD = 50 V; RL = 250 Ω; VGS = 10 V; RG = 6 Ω - 0.2 - nC - 0.2 - nC - 30 50 pF - 7 - pF - 4 - pF - 3 6 ns - 4 - ns - 10 20 ns - 5 - ns 0.47 0.75 1.1 V Source-drain diode VSD [1] 2N7002PV Product data sheet source-drain voltage IS = 115 mA; VGS = 0 V Pulse test: tp ≤ 300 μs; δ ≤ 0.01. All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 6 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 017aaa017 0.7 VGS = 4.0 V ID (A) 0.6 3.5 V 017aaa018 10−3 ID (A) 0.5 10−4 3.25 V (1) 0.4 0.3 (3) (2) 3.0 V 10−5 0.2 2.75 V 0.1 2.5 V 10−6 0.0 0.0 1.0 2.0 3.0 4.0 0 1 2 VDS (V) 3 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Per transistor: Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa019 10.0 RDSon (Ω) Per transistor: Sub-threshold drain current as a function of gate-source voltage 017aaa020 6.0 RDSon (Ω) (1) 7.5 (2) 4.0 5.0 (1) 2.0 2.5 (2) (3) (4) (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 ID (A) Tamb = 25 °C 4.0 6.0 8.0 10.0 VGS (V) ID = 500 mA (1) VGS = 3.25 V (1) Tamb = 150 °C (2) VGS = 3.5 V (2) Tamb = 25 °C (3) VGS = 4 V (4) VGS = 5 V (5) VGS = 10 V Fig 8. Per transistor: Drain-source on-state resistance as a function of drain current; typical values 2N7002PV Product data sheet Fig 9. Per transistor: Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 7 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 017aaa021 1.0 ID (A) 017aaa022 2.4 a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 (2) 0.0 0.0 1.0 (1) 2.0 3.0 4.0 5.0 VGS (V) 0.0 −60 VDS > ID × RDSon 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Per transistor: Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa023 3.0 VGS(th) (V) 0 Fig 11. Per transistor: Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa024 102 (1) (1) C (pF) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 −60 0 60 120 180 Tamb (°C) ID = 0.25 mA; VDS = VGS 1 10−1 f = 1 MHz; VGS = 0 V (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Per transistor: Gate-source threshold voltage as a function of ambient temperature Product data sheet 102 10 VDS (V) (1) maximum values 2N7002PV 1 Fig 13. Per transistor: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 8 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 017aaa025 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 0.8 QGD QG(tot) QG (nC) 003aaa508 ID = 300 mA; VDS = 30 V; Tamb = 25 °C Fig 14. Per transistor: Gate-source voltage as a function of gate charge; typical values Fig 15. Per transistor: Gate charge waveform definitions 017aaa026 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values 2N7002PV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 9 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 2N7002PV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 10 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 SOT666 Fig 18. Package outline SOT666 2N7002PV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 11 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 10. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Reflow soldering is the only recommended soldering method. Fig 19. Reflow soldering footprint SOT666 2N7002PV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 12 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002PV v.1 20100805 Product data sheet - - 2N7002PV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 13 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 2N7002PV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 14 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2N7002PV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 15 of 16 2N7002PV NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 August 2010 Document identifier: 2N7002PV