TF070N04N

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET TF070N04N ● General Description ● Product Summary The TF070N04N uses advanced trench technology VDS=40V ID=55A D and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. RDSON(10V typ)=6.8mΩ G RDSON(4.5V typ)=8.7mΩ ● Features S Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching D D D D D D D D Low Thermal resistance 070N04N TFAYXA ●Application Synchronous Rectification for AC-DC/DC-DC converter G S S S S S S G Power Tools ●Package Marking and Ordering Information: Part NO. TF070N04N Marking1 070N04N Marking2 TF:tuofeng; Y:year code; XX:Week; AA:device code; Basic ordering unit (pcs) 5000 ●Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V ID@TC=25℃ 55 A ID@TC=75℃ 41 A ID@TC=100℃ 33 A Pulsed Drain Current ① IDM 180 A Total Power Dissipation PD@TC=25℃ 35 W Total Power Dissipation PD@TA=25℃ 2.0 W TJ -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 45 mJ Continuous Drain Current Operating Junction Temperature www.sztuofeng.com 1 Feb 2021 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET TF070N04N ●Thermal resistance Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 3.5 °C/W Thermal resistance, junction - ambient RthJA - - 37 °C/W Soldering temperature, wavesoldering for 8 s Tsold - - 265 °C Min. Typ Max. Unit Parameter ●Electronic Characteristics Parameter Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 40 - Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.1 Drain-Source Leakage Current IDSS VDS=40 VGS =0V Gate- Source Leakage Current IGSS Static Drain-source On Resistance RDS(ON) - V 1.5 2.1 V - - 1.0 uA VGS=±20V ,VDS =0V - - ±100 nA VGS=10V, ID=20A - 6.8 8.5 mΩ VGS=4.5V, ID=15A - 8.7 11.0 mΩ Forward Transconductance gFS VDS =25V, ID=20A - 20 - S Source-drain voltage VSD Is=20A - 0.84 1.20 V ●Electronic Characteristics Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Condition Min. Typ Max. - 1366 - VDS=20V - 127 - VGS = 0V - 111 - f = 1MHz Unit pF ●Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Total gate charge Qg VDD = 20V - 31.3 - Gate - Source charge Qgs ID = 20A - 10.8 - Gate - Drain charge Qgd VGS = 10V - 3.68 - Unit nC Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; www.sztuofeng.com 2 Feb 2021 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET TF070N04N Test Circuit 1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit www.sztuofeng.com 3 Feb 2021 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET TF070N04N I D- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics 20A TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) 20A Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) 13 11 4.5V 9 7 10V 5 0 0 5 10 15 20 25 30 ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current www.sztuofeng.com Figure 6 Source- Drain Diode Forward 4 Feb 2021 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET TF070N04N 4000 40 Power Dissipation (W) Frequency=1.0MHz Capacitance (pF) 3000 2000 Ciss 1000 Coss Crss 0 20 0 1 10 100 0 25 50 75 100 125 Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating 1000 150 10 10µs 100µs 1ms 10ms DC 1 ID- Drain Current (A) RDS(ON) limited 80 100 ID- Drain Current (A) 30 0.1 70 60 50 40 30 20 10 TC=25°C r(t),Normalized Effective Transient Thermal Impedance 0.01 0.01 0.1 0 1 10 100 VGS=10V 25 1000 50 75 100 125 Vds Drain-Source Voltage (V) TJ-Junction Temperature (℃) Figure 8 Safe Operation Area Figure 10 Current De-rating 150 1000 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 Single Pulse 0.1 0.0001 0.001 0.01 RθJA=37°C/W 0.1 1 10 100 Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 5 Feb 2021 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET TF070N04N Symbol A A3 D E D1 E1 D2 E2 k b e L L1 H θ www.sztuofeng.com Dimensions In Millimeters Min. Max. 0.900 1.000 0.254REF. 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 1.190 1.390 0.350 0.450 1.270TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° 6 Dimensions In Inches Min. Max. 0.035 0.039 0.010REF. 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 0.047 0.055 0.014 0.018 0.050TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° Feb 2021 V1.0