RS8557,RS8558,RS8559
Zero-Drift, Rail-to-Rail I/O
CMOS Operational Amplifiers
Features
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Description
The RS8557,RS8558,RS8559 series of CMOS
operational amplifiers use auto-zero techniques to
simultaneously provide very low offset voltage (50μV
max) and near-zero drift over time and temperature.
This family of amplifiers has ultralow noise, offset
and power.
Low Offset Voltage: 20uV
Input Offset Drift: 0.03μV/°C
High Gain Bandwidth Product: 4.3MHz
Rail-to-Rail Input and Output
High Gain, CMRR, PSRR:120dB
High Slew Rate: 2.5V/μs
Low Noise: 0.93uVp-p (0.01~10Hz)
Low Power Consumption: 650μA /op amp
Overload Recovery Time:1us
Low Supply Voltage: +2.7 V to +5.5 V
No External Capacitors Required
Extended Temperature: -40°C to +125°C
This miniature, high-precision operational amplifiers
offset high input impedance and rail-to-rail input and
rail-to-rail output swing. With high gain-bandwidth
product of 4.3MHz and slew rate of 2.5V/μs.
Single or dual supplies as low as +2.7V (±1.35V)
and up to +5.5V (±2.75V) may be used.
The RS8557/RS8558/RS8559 are specified for the
extended industrial and automotive temperature
range (-40°C to 125°C). The RS8557 single
amplifier is available in 5-lead SOT23, 8-lead
MSOP8 and 8-lead SOIC packages, The RS8558
dual amplifier is available in 8-lead SOIC and 8-lead
MSOP narrow surface mount packages, The
RS8559 quad amplifier is available in 14-lead SOIC
and 14-lead narrow TSSOP packages.
Applications
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Temperature Sensors
Medical/Industrial Instrumentation
Pressure Sensors
Battery-Powered Instrumentation
Active Filtering
Weight Scale Sensor
Strain Gage Amplifiers
Power Converter/Inverter
REV B.2
1
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RS8557, RS8558, RS8559
PIN CONFIGURATIONS
1
V-
2
+IN
3
5
+
-
NC
1
-IN
2
+IN
3
V-
4
8
NC
-
OUT
7
V+
+
RS8557
RS8557
6
OUT
5
NC
V+
4
-IN
SOT23-5
SOIC-8(SOP8),MSOP-8
RS8559
RS8558
OUT A
1
8
V+
-IN A
2
7
OUTB
+IN A
3
6
-IN B
5
+IN B
V-
4
+
A
B+
SOIC-8(SOP8),MSOP-8
OUT A
1
-IN A
2
+IN A
14
OUT D
13
-IN D
3
12
+IN D
V+
4
11
V-
+IN B
5
10
+IN C
9
-IN C
8
OUT C
-IN B
6
OUT B
7
A
- +
- +
B
D
+ -
+ C
SOIC-14(SOP14),TSSOP-14
Note: NC indicates no internal connection
2
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RS8557, RS8558, RS8559
ABSOLUTE MAXIMUM RATINGS (1)
Supply Voltage, V+ to V-...............................................7.0V
Input Terminals, Voltage (2) …………... – 0.5 to (V+) + 0.5V
Current (2)…………………....…..... ±10mA
Storage Temperature ……….…………… −65°C to +150°C
Operating Temperature ……….………… −40°C to +125°C
Junction Temperature................................................150°C
Package Thermal Resistance @ TA = +25°C
SOT23-5, SOT23-6………………….………………200°C/W
MSOP-10, SOIC-8 …………………….…………... 150°C/W
SOIC-14, TSSOP-14………….……….……………100°C/W
Lead Temperature (Soldering, 10s) ……………........260°C
ESD Susceptibility
HBM …......................................................................5000V
MM ……………………….........………………...……….400V
ESD SENSITIVITY CAUTION
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to
damage because very small parametric changes
could cause the device not to meet its published
specifications.
(1) Stresses above these ratings may cause permanent damage. Exposure
to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those
specified is not implied.
(2) Input terminals are diode-clamped to the power-supply rails. Input
signals that can swing more than 0.5V beyond the supply rails should
be current-limited to 10mA or less.
PACKAGE/ORDERING INFORMATION
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
3
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RS8557, RS8558, RS8559
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
(At TA = +250C, Vs=5V, RL = 10kΩ connected to VS/2, and VOUT = VS/2, unless otherwise noted.)
PARAMETER
CONDITION
RS8557,RS8558, RS8559
MIN
TYP
UNIT
MAX
OFFSET VOLTAGE
Input Offset Voltage
VS Temperature
VS Power Supply
Vos
VCM = Vs/2
dVos/dT
PSRR
VS = +2.7V to +5.5V, VCM = 0
105
Channel Separation, dc
20
50
μV
0.03
0.2
μV/0C
120
dB
0.13
μV/V
50
pA
10
pA
INPUT BIAS CURRENT
Input Bias Current
IB
Input Offset Current
Ios
VCM = Vs/2
NOISE PERFORMANCE
Input Voltage Noise
enp-p
f=0.01Hz to 10Hz
0.93
μVpp
Input Voltage Noise
enp-p
f=0.01Hz to 1Hz
0.32
μVpp
Input Voltage Noise Density
en
f=1KHz
45
nV/√Hz
Input Current Noise Density
in
f=10Hz
2.3
fA/√Hz
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
VCM
(V-)-0.2
Common-Mode Rejection Ratio CMRR
(V–) – 0.2V < VCM < (V+)+ 0.2V
105
(V+)+0.2
V
120
dB
Differential
1
pF
Common-Mode
5
pF
120
dB
2.5
V/μs
4.3
MHz
1
us
INPUT CAPACITANCE
OPEN-LOOP GAIN
Open-Loop Voltage Gain
AOL
RL=10KΩ, VO=0.3V to 4.7V, -40°C~125°C
SR
G=+1
105
DYNAMIC PERFORMANCE
Slew Rate
Gain-Bandwidth Product
GBW
Overload Recovery Time
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Short-Circuit Current
VOH
VOL
RL=100 KΩ to GND
4.99
4.998
V
RL=10 KΩ to GND
4.95
4.98
V
RL=100 KΩ to V+
1
10
mV
RL=10 KΩ to V+
10
30
mV
ISC
48
mA
POWER SUOOLY
Operating Voltage Range
Quiescent Current/ Amplifier
2.7
IQ
650
4
5.5
V
900
uA
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RS8557, RS8558, RS8559
TYPICAL CHARACTERISTICS
At TA = +25C, Vs=5V, RL = 10kΩ connected to VS/2, VOUT = VS/2, unless otherwise noted.
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
Population
Number Of Amplifiers
6
OFFSET VOLTAGE DRIFT PRODUCTION
DISTRIBUTION
5
4
3
2
1
0
-50 -40 -30 -20 -10 0
-30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30
10 20 30 40 50
Offset Voltage (uV)
Input Offset Drift (nV/℃)
OPEN−LOOP GAIN AND PHASE vs FREQUENCY
Open-Loop Gain(dB)
120
Phase
100
130
110
90
80
70
60
50
40
30
20
Input Bias Current(pA)
Gain
Phase Margin (°)
140
INPUT BIAS CURRENT vs TEMPERATURE
10K
100
10
0
-20
10
1K
10
-10
10M
100K
Frequency(Hz)
-40 -20
0
20
40
60
80 100 120 140
Temperature(℃)
POWER−SUPPLY REJECTION RATIO vs
FREQUENCY
140
140
120
COMMON−MODE REJECTION RATIO vs
FREQUENCY
120
100
100
CMRR(dB)
PSRR(dB)
1K
80
60
40
80
60
40
20
20
0
100
1K
10K
100K
1M
0
10M
100
Frequency(Hz)
5
1K
10K
100K
Frequency(Hz)
1M
10M
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RS8557, RS8558, RS8559
TYPICAL CHARACTERISTICS
At TA = +25C, Vs=5V, RL = 10kΩ connected to VS/2, VOUT = VS/2, unless otherwise noted.
QUIESCENT CURRENT vs TEMPERATURE
QUIESCENT CURRENT vs TEMPERATURE
660
650
Quiescent Current(uA)
Quiescent Current(uA)
660
640
630
620
610
650
640
630
620
610
600
-40 -20 0
-40 -20 0 20 40 60 80 100 120 140
Temperature(℃) Vs=2.7V
20 40 60 80 100 120 140
Temperature(℃) Vs=5V
SINK CURRENT vs TEMPERATURE
70
65
65
Sink Current(mA)
70
60
55
50
60
55
50
45
45
40
40
-40 -20 0
-40 -20 0 20 40 60 80 100 120 140
Temperature(℃)
20 40 60 80 100 120 140
Temperature(℃)
LARGE−SIGNAL STEP RESPONSE
SMALL−SIGNAL STEP RESPONSE
CL=100PF
CL=100PF
1V/div
50mV/div
Source Current(mA)
SOURCE CURRENT vs TEMPERATURE
200ns/div
1us/div
6
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RS8557, RS8558, RS8559
TYPICAL CHARACTERISTICS
At TA = +25C, Vs=5V, RL = 10kΩ connected to VS/2, VOUT = VS/2, unless otherwise noted.
0V
0V
VS=±2.5V
G=-100
VS=±2.5V
G=-100
VOUT
200ns/DIV
200ns/DIV
0.01Hz TO 10Hz NOISE AT Vs=2.7V
200nV/div
400nV/div
0.01Hz TO 10Hz NOISE AT Vs=5V
10s/div
10s/div
0.01Hz TO 1Hz NOISE AT Vs=5V
200nV/div
0.01Hz TO 1Hz NOISE AT Vs=2.7V
100nV/div
0V
1V/div
VOUT
200mV/div
VIN
VIN
1V/div
0V
NEGATIVE OVERVOLTAGE RECOVERY
200mV/div
POSITIVE OVERVOLTAGE RECOVERY
10s/div
10s/div
7
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RS8557, RS8558, RS8559
APPLICATION NOTES
OPERATING VOLTAGE
The RS8557, RS8558, RS8559 series op amps are
unity-gain stable and free from unexpected output
phase reversal. They use auto-zeroing techniques
to provide low offset voltage and very low drift over
time and temperature.
The RS8557, RS8558, RS8559 series op amps
operate over a power-supply range of +2.7V to
+5.5V (±1.35V to ±2.75V). Supply voltages higher
than 7V (absolute maximum) can permanently
damage the amplifier. Parameters that vary over
supply voltage or temperature are shown in the
Typical Characteristics section of this data sheet.
Good layout practice mandates use of a 0.1µF
capacitor placed closely across the supply pins.
For lowest offset voltage and precision performance,
circuit layout and mechanical conditions should be
optimized. Avoid temperature gradients that create
thermoelectric (Seebeck) effects in thermocouple
junctions formed from connecting dissimilar
conductors. These thermally-generated potentials
can be made to cancel by assuring that they are
equal on both input terminals.
LAYOUT GUIDELINES
Attention to good layout practices is always
recommended. Keep traces short. When possible,
use a PCB ground plane with surface-mount
components placed as close to the device pins as
possible. Place a 0.1µF capacitor closely across the
supply pins. These guidelines should be applied
throughout the analog circuit to improve
performance and provide benefits such as reducing
the EMI (electromagnetic-interference) susceptibility.
• Use low thermoelectric-coefficient connections
(avoid dissimilar metals).
• Thermally isolate components
supplies or other heat-sources.
from
power
• Shield op amp and input circuitry from air
currents, such as cooling fans.
Following these guidelines will reduce the likelihood
of junctions being at different temperatures, which
can cause thermoelectric voltages of 0.1µV/°C or
higher, depending on materials used.
Figure 1. The Layout of Guard Ring
8
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RS8557, RS8558, RS8559
PACKAGE OUTLINE DIMENSIONS
SOT23-5
D
1.90
b
2.59
E1
E
0.99
0.95
0.69
e
e1
RECOMMENDED LAND PATTERN (Unit: mm)
0.2
A A2
L
A1
Symbol
c
θ
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
1.050
1.250
0.041
0.049
A1
0.000
0.100
0.000
0.004
A2
1.050
1.150
0.041
0.045
b
0.300
0.500
0.012
0.020
c
0.100
0.200
0.004
0.008
D
2.820
3.020
0.111
0.119
E
1.500
1.700
0.059
0.067
E1
2.650
2.950
0.104
0.116
e
0.950(BSC)
0.037(BSC)
e1
1.800
2.000
0.071
0.079
L
0.300
0.600
0.012
0.024
θ
0°
8°
0°
8°
9
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RS8557, RS8558, RS8559
MSOP-8
b
e
E
E1
4.8
1.02
D
0.65
0.41
RECOMMENDED LAND PATTERN (Unit: mm)
A2
c
A
A1
L
Symbol
Dimensions In Millimeters
θ
Dimensions In Inches
Min
Max
Min
Max
A
0.820
1.100
0.032
0.043
A1
0.020
0.150
0.001
0.006
A2
0.750
0.950
0.030
0.037
b
0.250
0.380
0.010
0.015
c
0.090
0.230
0.004
0.009
D
2.900
3.100
0.114
0.122
e
0.650(BSC)
0.026(BSC)
E
2.900
3.100
0.114
0.122
E1
4.750
5.050
0.187
0.199
L
0.400
0.800
0.016
0.031
θ
0°
6°
0°
6°
10
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RS8557, RS8558, RS8559
TSSOP-14
e
b
5.6
E1 E
1.78
D
0.65
0.42
RECOMMENDED LAND PATTERN (Unit: mm)
A2
A
A1
Symbol
H
C
θ
L
Dimensions In Millimeters
Min
Max
A
Dimensions In Inches
Min
Max
1.200
0.047
A1
0.050
0.150
0.002
0.006
A2
0.800
1.050
0.031
0.041
b
0.190
0.300
0.007
0.012
c
0.090
0.200
0.004
0.008
D
4.860
5.100
0.191
0.201
E
4.300
4.500
0.169
0.177
E1
6.250
6.550
0.246
0.258
e
L
0.650(BSC)
0.500
H
θ
0.026(BSC)
0.700
0.020
0.25(TYP)
1°
0.028
0.01(TYP)
7°
11
1°
7°
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RS8557, RS8558, RS8559
SOIC-8(SOP8)
b
e
5.2
E
E1
2.2
D
1.27
0.6
RECOMMENDED LAND PATTERN (Unit: mm)
A2
c
A
A1
L
Symbol
Dimensions In Millimeters
θ
Dimensions In Inches
Min
Max
Min
Max
A
1.350
1.750
0.053
0.069
A1
0.100
0.250
0.004
0.010
A2
1.350
1.550
0.053
0.061
b
0.330
0.510
0.013
0.020
c
0.170
0.250
0.007
0.010
D
4.800
5.000
0.189
0.197
e
1.270(BSC)
0.050(BSC)
E
5.800
6.200
0.228
0.244
E1
3.800
4.000
0.150
0.157
L
0.400
1.270
0.016
0.050
θ
0°
8°
0°
8°
12
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RS8557, RS8558, RS8559
SOIC-14(SOP14)
e
b
5.2
1.27
E E1
0.6
D
1.27
RECOMMENDED LAND PATTERN (Unit: mm)
A2
A1
A
c
θ
L
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
1.350
1.750
0.053
0.069
A1
0.100
0.250
0.004
0.010
A2
1.350
1.550
0.053
0.061
b
0.310
0.510
0.012
0.020
c
0.100
0.250
0.004
0.010
D
8.450
8.850
0.333
0.348
e
1.270(BSC)
0.050(BSC)
E
5.800
6.200
0.228
0.244
E1
3.800
4.000
0.150
0.157
L
0.400
1.270
0.016
0.050
θ
0°
8°
0°
8°
13
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