BRCS30P10DP

BRCS30P10DP Rev.A Sep.-2018 描述 / DATA SHEET Descriptions TO-252 塑封封装 P 沟道 MOS 场效应管。P-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features RDS(on)小，门电荷低，Crss 小，开关速度快。 Low RDS(on),low gate charge, low Crss, fast switching. 用途 / Applications 用于低压电路如：汽车电路、DC/DC 转换、便携式产品的电源高效转换。 Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. . 内部等效电路 引脚排列 / Equivalent Circuit / Pinning PIN1：G 放大及印章代码 PIN 2：D PIN 3：S PIN 4：D / hFE Classifications & Marking 见印章说明。See Marking Instructions. http://www.fsbrec.com 1/8 BRCS30P10DP Rev.A Sep.-2018 极限参数 / DATA SHEET Absolute Maximum Ratings(Ta=25℃) 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit VDSS -100 V Drain Current ID(Tc=25℃) -30 A Drain Current ID(Tc=100℃) -21.5 A Drain Current - Pulsed C IDM -80 A Gate-Source Voltage VGS ±20 V IAS -27.0 A EAS 291.6 mJ PD(Tc=25℃) 53.5 W PD(Tc=100℃) 26.5 W PDSM(TA=25℃) 2.5 W PDSM(TA=70℃) 1.6 W Tj，Tstg -55～150 ℃ Drain-Source Voltage Avalanche Current C Avalanche energy L=0.5mH C Power Dissipation B Power Dissipation A Junction and Storage Temperature Range 电性能参数 / Electrical Characteristics(Ta=25℃) 参数 Parameter 符号 Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Forward IGSS 测试条件 Test Conditions VGS=0V ID=-250μA VDS=-100V VGS=0V VDS=-100V TJ=55°C VGS=0V VGS=±20V VDS=0V 最小值 典型值 最大值 Min Typ Max -100 V -1.0 μA -5.0 μA ±0.1 μA -1.7 -3 V Gate Threshold Voltage VGS(th) VDS=VGS ID=250μA Static Drain-Source On-Resistance RDS(on)1 VGS=-10V ID=-30A 46 50 mΩ RDS(on)2 VGS=-4.5V ID=-15A 49 51 mΩ Forward Transconductance gFS VDS=-10V ID=-10A 25 Diode Forward Voltage VSD IS=-30A VGS=0V -0.72 http://www.fsbrec.com -1 单位 Unit S -1.3 V 2/8 BRCS30P10DP Rev.A Sep.-2018 电性能参数 DATA SHEET / Electrical Characteristics(Ta=25℃) 参数 Parameter 符号 Symbol Input Capacitance 测试条件 Test Conditions 最小值 典型值 最大值 Min Typ Max Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) 5110 VDS=-25V f=1.0MHz VGS=0V 198 VGS=0V f=1MHz VGS=-10V ID=-20A VDS=0V VDS=-50V 3.87 25 7 12 Gate Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 7 Turn-On Rise Time tr Turn-Off Delay Time td(off) Maximum Junction-to-Ambient Maximum Junction-to-Case VGS=-10V RL=2.5Ω RGEN=23Ω 4.5 VDS=-50V AD Qrr RθJA RθJC 8 nC ns 20 tf trr Ω 16.5 Qgs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Junction-to-Ambient A pF 131 Gate Source Charge Turn-Off Fall Time 单位 Unit 3 IF=-20A dI/dt=500A/ms IF=-20A dI/dt=500A/ms t≤10s 30 ns 145 nC 16 20 ℃/W teady-State 41 50 ℃/W 2.2 2.8 ℃/W teady-State 2 A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1to6 are obtained using