山东晶导微电子有限公司
RS1ABF THRU RS1MBF
Jingdao Microelectronics
Surface Mount Fast Recovery Rectifiers
Reverse Voltage - 50 to 1000 V
PINNING
Forward Current - 1 A
PIN
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• Fast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: R1AB-R1M B
MECHANICAL DATA
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 57mg / 0.002oz
Simplified outline SMBF symbol
Absolute Maximum Ratings and Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
RS1ABF
RS1BBF
RS1DBF
RS1GBF
RS1JBF
RS1KBF
RS1MBF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V DC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
at T c = 125 °C
I F(AV)
1
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
I FSM
30
A
Maximum Forward Voltage at 1 A
VF
1.3
V
IR
5
50
μA
Cj
15
pF
Parameter
Maximum DC Reverse Current
T a = 25 °C
at Rated DC Blocking Voltage
T a =125 °C
Typical Junction Capacitance
at V R =4V, f=1MHz
Maximum Reverse Recovery Time
t rr
(1)
Typical Thermal Resistance (2)
Operating and Storage Temperature Range
150
250
500
ns
RθJA
75
°C/W
T j , T stg
-55 ~ +150
°C
(1)Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A .
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.01
SMBF-F-RS1ABF~RS1MBF-1A1KV
Page 1 of 3
山东晶导微电子有限公司
RS1ABF THRU RS1MBF
Jingdao Microelectronics
Fig.2 Typical Reverse Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
50
75
100
125
150
175
Instaneous Reverse Current(μ A)
Average Forward Current (A)
Fig.1 Forward Current Derating Curve
100
T J =125°C
10
1.0
T J =25°C
0.1
00
T J =25°C
1.0
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
40
60
80
100
120
140
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
Instaneous Forward Current (A)
Fig.3 Typical Instaneous Forward
Characteristics
10
20
percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
100
T J =25°C
10
1
0.5
1.0
1.5
2.0
2.5
0.1
1.0
10
100
Reverse Voltage (V)
Instaneous Forward Voltage (V)
Peak Forward Surage Current (A)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
35
30
25
20
15
10
05
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
2016.01
www.sdjingdao.com
Page 2 of 3
山东晶导微电子有限公司
RS1ABF THRU RS1MBF
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SMBF
∠ALL ROUND
C
A
∠ALL ROUND
D
E
A
V M
g
Top View
mil
Bottom View
A
C
D
E
HE
e
max
1.3
0.26
4.4
3.7
5.5
2.2
min
1.1
0.18
4.2
3.5
5.1
1.9
max
51
10
173
146
216
86
min
43
7
165
138
200
75
UNIT
mm
g
pad
e
E
A
pad
HE
g
1.0
9°
The recommended mounting pad size
40
Marking
Type number
3.0(118)
Unit:mm(mil)
2016.01
Marking code
1.8(71)
2.54(100)
1.8(71)
∠
JD512264B6
RS1ABF
R1AB
RS1BBF
R1BB
RS1DBF
R1DB
RS1GBF
R1GB
RS1JBF
R1JB
RS1KBF
R1KB
RS1MBF
R1MB
Page 3 of 3
很抱歉,暂时无法提供与“RS1MBF”相匹配的价格&库存,您可以联系我们找货
免费人工找货