LPM3400B3F

Preliminary Datasheet LPM3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3400 uses advanced trench technology to  20V/5A, RDS(ON)＜33mΩ(max.)@VGS=4.5V provide excellent RDS(ON), low gate charge and  20V/4A, RDS(ON)＜52mΩ(max.)@VGS=2.5V operation with gate voltages as low as 1.1V. This  Super high density cell design for extremely low RDS(ON) device is suitable for use as a load switch or in PWM applications. Standard Product LPM3400 is Pb-free. □□ □ F: Pb-Free Package Type: B3: SOT23 LPM3400-00 Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Device Marking Package Shipping LPM340B3F A2SXX SOT23 3K 1 TOP VIEW S  Marking Information Pin Configurations G SOT23 Package Applications Order Information LPM3400  3 D 2 Jun.-2013 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 1 of 6 Preliminary Datasheet LPM3400 Absolute Maximum Ratings Parameter Symbol Maximum Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation TA=70℃ Junction and Storage Temperature Range 4.9 A 30 1.4 PD TJ, TSTG V 5.8 ID IDM TA=25℃ Unit W 1 -55 to 150 ℃ Thermal resistance ratings Parameter Junction-to-Case Thermal Resistance LPM3400-00 Jun.-2013 Email: marketing@lowpowersemi.com Symbol MAX Unit RθJA 125 ℃/W www.lowpowersemi.com Page 2 of 6 Preliminary Datasheet LPM3400 Electrical Characteristics Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Conditions Min BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 20 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Typ Max Units STATIC PARAMETERS RDS(ON) VDS=20V, VGS=0V 1 TJ=55℃ 5 Gate-Body leakage current VDS=0V, VGS=12V ±100 nA Gate Threshold Voltage VDS=VGS, ID=250μA 1.1 1.4 V VGS=10V, ID=5.8A 22 28 VGS=4.5V, ID=5A 27 33 VGS=2.5V, ID=4A 43 52 Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=5A VSD Diode Forward Voltage IS=1A,VGS=0V IS V 0.7 10 μA 15 0.7 Maximum Body-Diode Continuous Current mΩ S 1 V 2.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 400 pF 99 pF 77 pF 1.2 3.6 Ω SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge tD(on) Turn-On Delay Time tr Turn-On Rise Time tD(off) Turn-Off Delay Time tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge LPM3400-00 Jun.-2013 9.7 nC 1.6 nC 3.1 nC 3.3 ns VGS=10V, VDS=15V, 4.8 ns RL=2.7Ω,RGEN=3Ω 26.3 ns 4.1 ns IF=5A, dI/dt=100A/μs 16 ns IF=5A, dI/dt=100A/μs 8.9 nC VGS=4.5V, VDS=15V, ID=5.8A Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 3 of 6 Preliminary Datasheet LPM3400 Typical Characteristics LPM3400-00 Jun.-2013 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 6 Preliminary Datasheet LPM3400-00 Jun.-2013 Email: marketing@lowpowersemi.com www.lowpowersemi.com LPM3400 Page 5 of 6 Preliminary Datasheet LPM3400 Packaging Information LPM3400-00 Jun.-2013 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 6 of 6