BAV21WS

Plastic-Encapsulate Diodes BAV19WS - BAV21WS Features · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance · · Mechanical Data · · Case: SOD-323, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture Sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: Cathode Band, See Page 2 BAV19WS Marking: A8 or T2 or T3 BAV20WS Marking: T2 or T3 BAV21WS Marking: T3 Weight: 0.004 grams (approx.) · · · · · · · SOT-323 Maximum Ratings @ TA = 25°C unless otherwise specified Symbol BAV19WS BAV20WS BAV21WS Unit Repetitive Peak Reverse Voltage Characteristic VRRM 120 200 250 V Working Peak Reverse Voltage DC Blocking Voltage VRWM VR 100 150 200 V VR(RMS) 71 106 141 RMS Reverse Voltage V Forward Continuous Current (Note 1) IFM 400 mA Average Rectified Output Current (Note 1) IO 200 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0s IFSM 2.5 0.5 A Repetitive Peak Forward Surge Current IFRM 625 mA Pd 200 mW RqJA 625 °C/W Tj , TSTG -65 to +150 °C Power Dissipation Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit V(BR)R 120 200 250 ¾ V IR = 100mA Forward Voltage (Note 2) VFM ¾ 1.0 1.25 V IF = 100mA IF = 200mA Peak Reverse Current @ Rated DC Blocking Voltage (Note 2) IRM ¾ 100 15 NA mA Tj = 25°C Tj = 100°C Total Capacitance Ct ¾ 5.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ¾ 50 ns IF = IR = 30mA, Irr = 0.1 x IR, RL = 100W Reverse Breakdown Voltage (Note 2) Note: BAV19WS BAV20WS BAV21WS Test Condition 1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Diodes IF, INSTANTANEOUS FORWARD CURRENT (mA) BAV19WS - BAV21WS PD, POWER DISSIPATION (mW) 300 200 100 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs Ambient Temperature 1000 Tj = 25°C 100 10 1.0 0.1 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Forward Characteristics IR, LEAKAGE CURRENT (µA) 100 10 1 0.1 0.01 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Leakage Current vs Junction Temperature GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2