HSS3402A

HSS3402A N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSS3402A is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS3402A meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ VDS 30 V RDS(ON),typ 34 mΩ ID 4 A SOT23 Pin Configuration Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ ±12 V Continuous Drain Current, VGS @ 4.5V1 4 A Continuous Drain Current, VGS @ 4.5V1 3.5 A Current2 16 A Dissipation3 0.8 W Pulsed Drain Total Power TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance 1 Typ. Max. Unit --- 145 ℃/W --- 78 ℃/W 1 HSS3402A N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.029 --- V/℃ 34 45 VGS=10V , ID=4A RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS=4.5V , ID=3.5A --- 39 50 VGS=2.5V , ID=3A --- 50 65 0.5 1 1.6 V --- -2.82 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=3A --- 33 --- S Qg Total Gate Charge (4.5V) --- 4.6 --- --- 0.98 --- VDS=15V , VGS=4.5V , ID=3A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.8 --- Turn-On Delay Time --- 3.2 --- Td(on) uA nC Rise Time VDD=15V , VGS=10V , RG=3.3 --- 1.9 --- Turn-Off Delay Time ID=3A --- 17 --- Fall Time --- 2.6 --- Ciss Input Capacitance --- 234 --- Coss Output Capacitance --- 36 --- Crss Reverse Transfer Capacitance --- 18 --- Min. Typ. Max. Unit --- --- 4 A --- --- 16 A --- --- 1.2 V Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Pulsed Source Current1,4 Current2,4 Diode Forward Voltage 2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn 2 HSS3402A N-Ch 30V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn 3 HSS3402A N-Ch 30V Fast Switching MOSFETs www.hs-semi.cn 4 HSS3402A N-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSS3402A www.hs-semi.cn Package code SOT-23 Packaging 3000/Tape&Reel 5