BYV32E-200,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits „ High reverse voltage surge capability „ High thermal cycling performance „ Soft recovery characteristic minimizes power consuming oscillations „ Low thermal resistance „ Very low on-state loss 1.3 Applications „ Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit - - 200 V VRRM repetitive peak reverse voltage IO(AV) average output current square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 - - 20 A IRRM repetitive peak reverse current tp = 2 µs; δ = 0.001 - - 0.2 A VESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins - - 8 kV IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; ramp recovery; see Figure 5 - 20 25 ns IR = 1 A; IF = 0.5 A; Tj = 25 °C; step recovery; measured at reverse current = 0.25 A; see Figure 6 - 10 20 ns IF = 8 A; Tj = 150 °C; see Figure 4 - 0.72 0.85 V Dynamic characteristics trr reverse recovery time Static characteristics VF forward voltage BYV32E-200 NXP Semiconductors Dual rugged ultrafast rectifier diode, 20 A, 200 V 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode 1 2 K cathode 3 A2 anode 2 mb K mounting base; cathode Simplified outline Graphic symbol mb A1 A2 K sym125 1 2 3 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV32E-200 TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 SC-46 TO-220AB BYV32E-200_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 27 February 2009 2 of 9 BYV32E-200 NXP Semiconductors Dual rugged ultrafast rectifier diode, 20 A, 200 V 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 200 V VRWM crest working reverse voltage - 200 V VR reverse voltage DC - 200 V IO(AV) average output current square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 - 20 A IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; per diode - 20 A IFSM non-repetitive peak forward current tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per diode - 137 A tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode - 125 A IRRM repetitive peak reverse current δ = 0.001; tp = 2 µs - 0.2 A IRSM non-repetitive peak reverse current tp = 100 µs - 0.2 A Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C VESD electrostatic discharge voltage - 8 kV HBM; C = 250 pF; R = 1.5 kΩ; all pins 003aac978 12 δ=1 a = 1.57 Ptot (W) 003aac979 15 Ptot (W) 1.9 0.5 2.2 8 10 2.8 0.2 4.0 0.1 4 5 0 0 0 4 8 12 0 IF(AV) (A) Fig 1. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values Fig 2. 10 IF(AV) (A) 15 Forward power dissipation as a function of average forward current; square waveform; maximum values BYV32E-200_4 Product data sheet 5 © NXP B.V. 2009. All rights reserved. Rev. 04 — 27 February 2009 3 of 9 BYV32E-200 NXP Semiconductors Dual rugged ultrafast rectifier diode, 20 A, 200 V 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from with heatsink compound; both diodes junction to mounting conducting base with heatsink compound; per diode; see Figure 3 - - 1.6 K/W - - 2.4 K/W thermal resistance from junction to ambient - 60 - K/W 003aac980 10 Zth(j-mb) (K/W) 1 10−1 δ= P tp T 10−2 t tp 10−3 10−6 Fig 3. T 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse width 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit IF = 20 A; Tj = 25 °C - 1 1.15 V IF = 8 A; Tj = 150 °C; see Figure 4 - 0.72 0.85 V Static characteristics VF IR forward voltage reverse current VR = 200 V; Tj = 100 °C - 0.2 0.6 mA VR = 200 V; Tj = 25 °C - 6 30 µA Dynamic characteristics Qr recovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs; Tj = 25 °C - 8 12.5 nC trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; ramp recovery; Tj = 25 °C; see Figure 5 - 20 25 ns IF = 0.5 A; IR = 1 A; step recovery; measured at reverse current = 0.25 A; Tj = 25 °C; see Figure 6 - 10 20 ns IF = 1 A; dIF/dt = 10 A/µs; Tj = 25 °C; see Figure 7 - - 1 V VFR forward recovery voltage BYV32E-200_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 27 February 2009 4 of 9 BYV32E-200 NXP Semiconductors Dual rugged ultrafast rectifier diode, 20 A, 200 V 003aac981 32 dlF IF dt IF (A) 24 trr (1) 16 (2) time (3) 25 % 100 % Qr 8 IRM IR 003aac562 0 0 0.4 0.8 1.2 1.6 Fig 5. VF (V) Fig 4. Reverse recovery definitions; ramp recovery Forward current as a function of forward voltage IF IF IF trr time time 0.25 x IR VF Qr VFRM IR IR VF 003aac563 time Fig 6. Reverse recovery definitions; step recovery 001aab912 Fig 7. Forward recovery definitions BYV32E-200_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 27 February 2009 5 of 9 BYV32E-200 NXP Semiconductors Dual rugged ultrafast rectifier diode, 20 A, 200 V 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 Fig 8. REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Package outline SOT78 (TO-220AB) BYV32E-200_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 27 February 2009 6 of 9 BYV32E-200 NXP Semiconductors Dual rugged ultrafast rectifier diode, 20 A, 200 V 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BYV32E-200_4 20090227 Product data sheet - BYV32E_SERIES_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • Legal texts have been adapted to the new company name where appropriate. Package outline updated. Type number BYV32E-200 separated from data sheet BYV32E_SERIES_3 BYV32E_SERIES_3 20010301 Product specification - BYV32E_SERIES_2 BYV32E_SERIES_2 19980701 Product specification - BYV32EB_SERIES_1 BYV32EB_SERIES_1 19960801 Product specification - - BYV32E-200_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 27 February 2009 7 of 9 BYV32E-200 NXP Semiconductors Dual rugged ultrafast rectifier diode, 20 A, 200 V 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BYV32E-200_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 27 February 2009 8 of 9 BYV32E-200 NXP Semiconductors Dual rugged ultrafast rectifier diode, 20 A, 200 V 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .7 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Contact information. . . . . . . . . . . . . . . . . . . . . . .8 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 February 2009 Document identifier: BYV32E-200_4