HSU1241

HSU1241 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU1241 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSU1241 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ VDS 40 V RDS(ON),max 16.5 mΩ ID 40 A TO252 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 40 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 23 A IDM Pulsed Drain Current2 85 A EAS Single Pulse Avalanche Energy3 31.3 mJ IAS Avalanche Current 25 A PD@TC=25℃ Total Power Dissipation4 31.3 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient (Steady State)1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 65 ℃/W --- 3 ℃/W 1 HSU1241 N-Ch 40V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.032 --- V/℃ VGS=10V , ID=15A --- 13.5 16.5 VGS=4.5V , ID=10A --- 18.4 24 1.2 1.6 2.5 V --- -4.8 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 34 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 ---  Qg Total Gate Charge (4.5V) --- 10 --- Qgs Gate-Source Charge --- 2.55 --- Qgd Gate-Drain Charge --- 4.8 --- Turn-On Delay Time --- 2.8 --- Td(on) Tr Td(off) Tf VDS=32V , VGS=4.5V , ID=15A Rise Time VDD=20V , VGS=10V , RG=3.3 --- 12.8 --- Turn-Off Delay Time ID=15A --- 21.2 --- nC ns Fall Time --- 6.4 --- Ciss Input Capacitance --- 1013 --- Coss Output Capacitance --- 107 --- Crss Reverse Transfer Capacitance --- 76 --- Min. Typ. Max. Unit --- --- 40 A --- --- 85 A --- 1.2 V VDS=15V , VGS=0V , f=1MHz pF Diode Characteristics Symbol Parameter Conditions IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- trr Reverse Recovery Time IF=15A , dI/dt=100A/µs , --- 10 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 3.1 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=25A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU1241 N-Ch 40V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage IS Source Current(A) 12 8 TJ=150℃ TJ=25℃ 4 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse diode 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1.4 1 1.0 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSU1241 N-Ch 40V Fast Switching MOSFETs 10000 F=1.0MHz Capacitance (pF) Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.01 0.1 0.05 0.02 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform waveform www.hs-semi.cn Ver 2.0 4 HSU1241 N-Ch 40V Fast Switching MOSFETs Ordering Information Part Number HSU1241 www.hs-semi.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 5