WS4611EB-5/TR

WS4611 WS4611 80mΩ, Current Limited, Power Distribution Switch www.sh-willsemi.com Descriptions The WS4611 is high-side switch with ultra-low ON resistance P-MOSFET. Integrated current-limit function can limit inrush current for heave capacitive load, over load current, and short-circuit current to protect power source. SOT-23-5L The WS4611 is also integrated reverse protection function to eliminate any reverse current flow across the switch when the device is off. Thermal shutdown function can protect the device and load. The output auto-discharge function is disabled in WS4611. The WS4611 is available in SOT-23-5L package. Standard product is Pb-free and Halogen-free. Features Pin configuration (Top view)  Input voltage range : 2.5~5.5V  Main switch RON : 80mΩ @ VIN=5V  Current limit threshold - WS4611EB : 1.0A (Typ.)  Reverse block (No “body diode”)  Over temperature protection Applications  USB peripherals 4611 = Device code  USB Dongle EB = Special code  USB 3G data card Y = Year code  3.3V or 5V Power Switch W = Week code  3.3V or 5V Power Distribution Marking Order information Will Semiconductor Ltd. 1 Device Package Shipping WS4611EB-5/TR SOT-23-5L 3000/Reel&Tape Aug, 2019 - Rev. 1.3 WS4611 Typical Applications Pin Descriptions Pin Number Symbol Descriptions 1 OUT Output Pin 2 GND Ground 3 FLG Fault Flag Pin, Open-Drain, Active Low 4 EN Enable Pin, Active High 5 IN Input Pin Block Diagram Will Semiconductor Ltd. 2 Aug, 2019 - Rev. 1.3 WS4611 Absolute maximum ratings Parameter Symbol Value Unit VIN -0.3～6.5 V OUT pin voltage range VOUT -0.3~6.5 V FLG pin voltage range VFLG -0.3~6.5 V EN pin voltage range VEN -0.3~6.5 Junction temperature TJ -40~150 o Lead temperature(Soldering, 10s) TL 260 o IN pin voltage range Storage temperature IN, OUT Pin ESD Ratings FLG, EN Pin ESD Ratings V C C Tstg -55 ~ 150 oC HBM 8000 V MM 400 V HBM 4000 V MM 400 V These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Recommend Operating Conditions Parameter Symbol Value Supply input voltage range VIN 2.5～5.5 Operating ambient temperature TA -40～85 RθJA 250 Thermal Resistance Will Semiconductor Ltd. 3 Unit V C o C/W o Aug, 2019 - Rev. 1.3 WS4611 Electronics Characteristics (Ta=25oC, VIN=5V, CIN=COUT=1μF, unless otherwise noted) Parameter Symbol Conditions Quiescent supply current IQ IOUT=0, VIN=VEN=5V Shutdown current ISD VEN=0V Reverse current IREV Main-FET ON resistance(1) RON Auto-discharge FET ON resistance RDCHG Over-current trip threshold IOC Short-circuit output current IOS Short circuit current limiting response time tSHORT Min. Typ. 48 VIN=VEN=0V, VOUT=5V, Current flow to VIN VIN=VEN=5V, IOUT=500mA VEN=0V, VIN =VOUT=5V Current ramp (≤100A/s) on OUT 0.7 OUT shorted to GND OUT connected to GND， CL=1μF EN input low voltage VIL VIN=5V EN input high voltage VIH VIN=5V OUT pin turn-on time after EN ON tON CL=1μF, RL=5ohm Max. Units 60 μA 1 μA 1 μA 80 mΩ 65 Ω 1 1.4 A 0.45 A 2 μs 0.4 1.6 V V 20 μs tBLANK 9 ms TSD 160 o THYS 35 o Under voltage lock out threshold VUVLO 2.2 V Under voltage lock out hysteresis VUVLO-HYS 200 mV Fault flag output blanking time Over-temperature shutdown threshold Over-temperature threshold hysteresis C C Note: (1) Pulse test, TP=380us Will Semiconductor Ltd. 4 Aug, 2019 - Rev. 1.3 WS4611 Typical Characteristics (Ta=25oC, unless otherwise noted) ON Resistance vs. Input Voltage ON Resistance vs. Temperature Quiescent current vs. Input Voltage Quiescent current vs. Temperature Shut-down Current vs. Temperature Shut-down Current vs. Input Voltage Will Semiconductor Ltd. 5 Aug, 2019 - Rev. 1.3 WS4611 1.20 ILIM (A) 1.15 1.10 1.05 VIN=5V 1.00 -50 -25 0 25 50 75 100 125 O Temperature( C) Current Limit vs. Input Voltage Current Limit vs. Temperature EN Threshold vs. Input Voltage Fault Flag Blanking time vs. Temperature Fault Flag Blanking time vs. Input Voltage Will Semiconductor Ltd. 6 Aug, 2019 - Rev. 1.3 WS4611 Startup from Power ON VIN=5V, Cin=Cout=1uF, no Load VIN=5V, Cin=1uF, Cout=1000uF, no Load Startup from Enable ON VIN=5V, Cin=Cout=1uF, no Load VIN=5V, Cin=1uF, Cout=1000uF, no Load Shutdown from Power OFF Shutdown from Enable OFF VIN=5V, Cin=Cout=1uF, no Load VIN=5V, Cin=Cout=1uF, no Load Current Limit Response Start into Short Circuit VIN=5V, Cin=Cout=1uF, RL=3Ω Will Semiconductor Ltd. VIN=5V, Cin=Cout=1uF, RL=0Ω 7 Aug, 2019 - Rev. 1.3 WS4611 Operation Information Power Switch The power switch is an P-channel MOSFET with low RDS(ON) for power management or USB power distribution applications. The WS4611 has reverse voltage protection to prevents current flow from OUT to IN and IN to OUT when device is off. Current-Limit Protection The WS4611 provide current limit protection function to protect power source when over-current condition occurs. Short-Circuit Protection The WS4611 provide short circuit protection function. The output current will be limited to safe level. The short-circuit protection is used to reduce power dissipation of the device and protect power source during short-circuit condition. Fault indicate The FLG open drain output is asserted (active low) with 8ms(Typ.) delay when an over-current or over-temperature condition is encountered. The FLG signal will remain asserted until the over-current or over-temperature condition is removed. UVLO Protection To avoid malfunction of the WS4611 at low input voltages, an under voltage lockout is included that disables the device, until the input voltage exceeds 2.2V (Typ.). Shutdown Mode Drive EN to GND to place the WS4611 in shutdown mode. In shutdown mode, input current falls to smaller than 1uA. Thermal Shutdown As soon as the junction temperature (TJ) exceeds 160oC (Typ.), the WS4611 goes into thermal shutdown. In this mode, the device is turned off and will turn on again until Junction temperature falls below 125oC (Typ.). Will Semiconductor Ltd. 8 Aug, 2019 - Rev. 1.3 WS4611 Application Information Input Capacitor A 1uF input bypass ceramic capacitor(CIN) from IN to GND, located near the WS4611 is strongly recommended to suppress the voltage overshooting during short circuit fault event. Without the bypass capacitor, the output short may cause sufficient ringing on the input (from supply lead inductance) to damage the device. Output Capacitor A low ESR, 150uF aluminum electrolytic or tantalum between OUT and GND is strongly recommended to reduce the voltage droop during hot-plug of downstream peripheral. Higher value output capacitor is better when the output load is heavy. Additionally, bypassing the output with a 1uF ceramic capacitor improves the immunity of the device to short-circuit transients. PCB Layout consideration The PCB layout should be carefully performed to maximize thermal dissipation and to minimize voltage drop. The following guidelines must be considered: 1. Please place the input capacitors near the IN pin as close as possible. 2. Output decoupling capacitors for load must be placed near the load as close as possible for decoupling high frequency ripples. 3. Locate WS4611 and output capacitors near the load to reduce parasitic resistance and inductance for excellent load transient performance. 4. The negative pins of the input and output capacitors and the GND pin must be connected to the ground plane of the load. 5. Keep IN and OUT traces as wide and short as possible. Will Semiconductor Ltd. 9 Aug, 2019 - Rev. 1.3 WS4611 PACKAGE OUTLINE DIMENSIONS SOT-23-5L D θ b K L M E E1 (Ⅰ ) (Ⅱ) c e e1 TOP VIEW SIDE VIEW 2.30 0.55 A A2 A1 0.95 1.50 0.80 SIDE VIEW Symbol RECOMMENDED LAND PATTERN (unit: mm) Dimensions in Millimeters Min. Typ. Max. A - - 1.45 A1 0.00 - 0.15 A2 0.90 1.10 1.30 b 0.30 0.40 0.50 c 0.10 - 0.21 D 2.72 2.92 3.12 E 2.60 2.80 3.00 E1 1.40 1.60 1.80 e 0.95 BSC e1 1.90 BSC L 0.30 0.45 0.60 M 0.10 0.15 0.25 K 0.00 - 0.25 θ 0° - 8° Will Semiconductor Ltd. 10 Aug, 2019 - Rev. 1.3 WS4611 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 11 Q4 Aug, 2019 - Rev. 1.3