ET8205A

Eternal Semiconductor Inc. ET8205A Dual N-Channel High Density Trench MOSFET (20V, 6A) PRODUCT SUMMARY VDSS 20V ID RDS(on) (mΩ) Typ. 6.0A 19 @ VGS = 4.5V, ID=6A 20@ VGS = 4.0V, ID=6A 25@ VGS = 2.5V, ID=5.2A Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Surface mount Package • Lead（Pb）-free and halogen-free Pin 1/ 8: Drain Pin 2/ 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6/ 7: Source 2 PKG:TSSOP-8 8 7 6 5 1 2 3 4 Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V 6 A 20 A PD Drain Current (Pulsed) Total Power Dissipation @TA=25°C 2 W IS Maximum Diode Forward Current 1.7 A -55 to +150 °C 62 °C/W ID IDM Tj, Tstg RQJA Drain Current (Continuous) a Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) b a: Repetitive Rating: Pulse width limited by the maximum junction temperature. b: 1-in2 2oz Cu PCB board DS-ET8205A-EN-REV1.0 Page 1 of 5 http://www.yieternal.com Eternal Semiconductor Inc. ET8205A Electrical Characteristics (TA=25°C, unless otherwise noted) Characteristic Symbol Test Conditions Min. Typ. Max. Unit • Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V - - 1 μA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V - - ±10 μA VDS=VGS, ID=250uA 0.5 0.65 1.0 V - 19 24 20 27 - 25 28 - 559 - - 148 - - 127 - - 5 - - 0.9 - • On Characteristics VGS(th) Gate Threshold Voltage Drain-Source On-State Resistance RDS(on) VGS=4.5V, ID=6A VGS=3V, ID=5.2A VGS=2.5V, ID=5.2A mΩ • Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=6V, VGS=0V, f=1MHz PF • Switching Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 1.4 - td(on) Turn-on Delay Time - 10.2 - tr Turn-on Rise Time - 7 - td(off) Turn-off Delay Time - 33 - - 6.8 - - - 1.2 tf VDS=10V, ID=6A, VGS=4.5V VDD=10V, RL=1.2Ω, ID=1A, VGEN=10V, RG=6Ω Turn-off Fall Time nC nS • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A V Note: Pulse Test: Pulse Width≤300us, Duty Cycle≤2% DS-ET8205A-EN-REV1.0 Page 2 of 5 http://www.yieternal.com Eternal Semiconductor Inc. ET8205A Typical Characteristics Curves (Ta=25°C, unless otherwise note) DS-ET8205A-EN-REV1.0 Page 3 of 5 http://www.yieternal.com Eternal Semiconductor Inc. ET8205A DS-ET8205A-EN-REV1.0 Page 4 of 5 http://www.yieternal.com Eternal Semiconductor Inc. ET8205A TSSOP8 PACKAGE OUTLINE DIMENSIONS DS-ET8205A-EN-REV1.0 Page 5 of 5 http://www.yieternal.com