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SDINBDA4-32G

SDINBDA4-32G

  • 厂商:

    SANDISK(闪迪)

  • 封装:

    TFBGA153_11.5X13MM

  • 描述:

    SDINBDA4-32G

  • 数据手册
  • 价格&库存
SDINBDA4-32G 数据手册
Released Data Sheet - Confidential 80-36-08400• Rev 1.01• October 2017 SanDisk iNAND® 7550 e.MMC 5.1 with Command-Queue and HS400 Interface © 2017 Western Digital Corporation or its affiliates. All rights reserved REVISION HISTORY Doc. No Revision Date Description 80-36-08400 1.0 17-Sep-2017 Initial version 80-36-08400 1.0.1 26-Oct-2017 DR & Write Endurance spec updates in Reliability section Ordering information update SanDisk® general policy does not recommend the use of its products in life support applications where in a failure or malfunction of the product may directly threaten life or injury. Per SanDisk® Terms and Conditions of Sale, the user of SanDisk® products in life support applications assumes all risk of such use and indemnifies SanDisk® against all damages. See “Disclaimer of Liability.” This document is for information use only and is subject to change without prior notice. SanDisk® assumes no responsibility for any errors that may appear in this document, nor for incidental or consequential damages resulting from the furnishing, performance or use of this material. No part of this document may be reproduced, transmitted, transcribed, stored in a retrievable manner or translated into any language or computer language, in any form or by any means, electronic, mechanical, magnetic, optical, chemical, manual or otherwise, without the prior written consent of an officer of SanDisk®. All parts of the SanDisk® documentation are protected by copyright law and all rights are reserved. SanDisk® and the SanDisk® logo are registered trademarks of Western Digital Corporation or its affiliates. Product names mentioned herein are for identification purposes only and may be trademarks and/or registered trademarks of their respective companies. © 2017 Western Digital Corporation or its affiliates. All rights reserved. © 2017 Western Digital Corporation or its affiliates. All rights reserved -2- 80-36-08400 SanDisk iNAND 7550 e.MMC 5.1 HS400 I/F data sheet TABLE OF CONTENTS 1. Introduction ......................................................................................................................... 5 1.1. General Description ...................................................................................................... 5 1.2. Plug-and-Play Integration ............................................................................................. 5 1.3. Feature Overview ......................................................................................................... 7 1.4. Defect and Error Management...................................................................................... 7 1.5. MMC bus and Power Lines ........................................................................................... 7 2. e.MMC 5.1 Selected Features Overview ............................................................................. 9 2.1. Field Firmware Upgrade (FFU) ................................................................................... 10 2.2. Cache ......................................................................................................................... 10 2.3. Discard ....................................................................................................................... 10 2.4. Power off Notifications ................................................................................................ 10 2.5. Packed Commands .................................................................................................... 11 2.6. Boot Partition .............................................................................................................. 11 2.7. RPMB Partition ........................................................................................................... 11 2.8. Automatic Sleep Mode................................................................................................ 11 2.9. Sleep (CMD5) ............................................................................................................. 11 2.10. Enhanced Reliable Write ............................................................................................ 11 2.11. Sanitize ...................................................................................................................... 12 2.12. Secure Erase .............................................................................................................. 12 2.13. Secure Trim ................................................................................................................ 12 2.14. Partition Management................................................................................................. 12 2.15. Device Health ............................................................................................................. 13 2.16. EOL Status ................................................................................................................. 13 2.17. Enhanced Write Protection ......................................................................................... 13 2.18. High Priority Interrupt (HPI)......................................................................................... 13 2.19. H/W Reset .................................................................................................................. 13 2.20. Host-Device Synchronization Flow (Enhanced STROBE) ........................................... 13 2.21. Command-Queue ....................................................................................................... 14 2.22. Frequent Used Commands in CmdQ .......................................................................... 14 2.23. HS400 tuning .............................................................................................................. 14 3. Product Specifications ..................................................................................................... 15 3.1. Typical Power Requirements ...................................................................................... 15 3.2. Operating Conditions .................................................................................................. 16 3.3. Reliability .................................................................................................................... 16 © 2017 Western Digital Corporation or its affiliates. All rights reserved -3- 80-36-08400 SanDisk iNAND 7550 e.MMC 5.1 HS400 I/F data sheet 3.4. Typical System Performance ...................................................................................... 17 4. Physical Specifications .................................................................................................... 18 5. Interface Description......................................................................................................... 20 5.1. MMC I/F Ball Array ..................................................................................................... 20 5.2. Pins and Signal Description ........................................................................................ 21 5.3. Registers value ........................................................................................................... 22 6. HW Application Guidelines ............................................................................................... 30 6.1. Design Guidelines ...................................................................................................... 30 6.2. Capacitor Selection & Layout Guidelines .................................................................... 31 6.3. Reference Schematics................................................................................................ 33 7. Propriety iNAND 7550 feature overview .......................................................................... 34 7.1. Content Preloading Operation Mode........................................................................... 34 7.2. SmartSLC ................................................................................................................... 36 7.3. Device Report ............................................................................................................. 38 7.4. RPMB Key Reset........................................................................................................ 42 8. Marking .............................................................................................................................. 43 9. Ordering Information ........................................................................................................ 43 How to Contact Us .................................................................................................................. 45 © 2017 Western Digital Corporation or its affiliates. All rights reserved -4- 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 HS400 I/F data sheet 1. INTRODUCTION 1.1. General Description Overview SanDisk iNAND 7550 is an Embedded Flash Drive (EFD) for boosting the overall performance of existing flash-based product lines like smartphones, tablets, automotive and infotainment systems as well as enabling manufacturers to bring the benefits of flash (rapid bootup, high reliability, robustness, consistent performance) to new markets such as entry-level notebooks. Providing up to 256GB of capacity and technology for features such as low-power consumption, the iNAND 7550 is the ideal choice to deliver amazing performance for storage-hungry applications like imaging, video, music, GPS, gaming, email, office and other applications on 4G smartphones, embedded systems or other devices. The design of the iNAND 7550 is based on JEDEC compatible form factors to lower integration costs and accelerate time-to-market. Architecture iNAND 7550 combines an embedded thin flash controller with advanced Triple-Level Cell (TLC) NAND flash technology enhanced by SanDisk’s embedded flash management software running as firmware on the flash controller. iNAND 7550 employs an industry-standard eMMC 5.11 interface featuring Command-Queue, HS400, FFU, as well as legacy eMMC 4.51 features such as Power Off Notifications, Packed commands, Cache, Boot / RPMB partitions, HPI, and HW Reset, make it an optimal device for both reliable code and data storage. Technology iNAND 7550 is based on SanDisk 256Gb X3 3D NAND memory, using 64-layer technology. The memory architecture brings new levels of density, scalability and performance to the Embedded Flash Drive. SanDisk 3D NAND memory also provides enhanced write/erase endurance, write speeds and energy efficiency relative to conventional 2D NAND iNAND 7550 architecture and embedded firmware fully emulates a hard disk to the host processor, enabling read/write operations that are identical to a standard, sector-based hard drive. In addition, SanDisk firmware employs patented methods, such as virtual mapping, dynamic and static wear-leveling, and automatic block management to ensure high data reliability and maximizing flash life expectancy. iNAND 7550 also includes an intelligent controller, which manages interface protocols, data storage and retrieval, error correction code (ECC) algorithms, defect handling and diagnostics, power management and clock control. Combining high performance with features for easy integration and exceptional reliability, iNAND 7550 is an EFD designed to exceed the demands of both manufacturers and their customers. 1.2. Plug-and-Play Integration iNAND’s optimized architecture eliminates the need for complicated software integration and testing processes thereby enabling plug-and-play integration into the host system. The 1 Compatible to JESD84-B51 © 2017 Western Digital Corporation or its affiliates. All rights reserved -5- 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet replacement of one iNAND device with another, of a newer generation, requires virtually no changes to the host. This allows manufacturers to adopt advanced NAND Flash technologies and update product lines with minimal integration or qualification efforts. With JEDEC form factors measuring 11.5x13mm (153 balls) for all capacities, iNAND 7550 is ideally suited for a wide variety of portable devices such as multimedia mobile handsets, tablets, and automotive infotainment. iNAND 7550 features a MMC interface allows easy integration regardless of the host (chipset) type used. All device and interface configuration data (such as maximum frequency and device identification) are stored on the device. Figure 1 shows a block diagram of the SanDisk iNAND 7550 with MMC Interface. SanDisk iNAND MMC Bus Interface Single Chip controller Data In/Out 3D Flash Memory Control Figure 1 - SanDisk iNAND 7550 with MMC Interface Block Diagram © 2017 Western Digital Corporation or its affiliates. All rights reserved -6- 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 1.3. Feature Overview SanDisk iNAND 7550, with MMC interface, includes the following features:  Memory controller and NAND flash  Mechanical design complies with JEDEC Specification  Offered in three TFBGA packages of eMMC 5.12 o 11.5mm x 13mm x 1.0mm (32GB-256GB)  Operating temperature range: –25C° to +85C°  Dual power system  Core voltage (VCC) 2.7-3.6 V  I/O (VCCQ) voltage, either: 1.7-1.95V or 2.7-3.6V  max 1 hours? what is this mean? Note: Device operation under 3.3V VCCQ is limited to Max 1 hour  Up to 256GB of data storage  Supports three data bus widths: 1bit (default), 4bit, 8bit  Complies with eMMC Specification Ver. 5.1 HS400  Variable clock frequencies of 0-20 MHz, 0-26 MHz (default), 0-52 MHz (high-speed), 0-200 MHz SDR (HS200), 0-200 MHz DDR (HS400)  Up to 400 MB/sec bus transfer rate, using 8 parallel data lines at 400 MHz, HS400 Mode  Correction of memory field errors  Designed for portable and stationary applications that require high performance and reliable data storage  RPMB Key Reset 1.4. Defect and Error Management The SanDisk iNAND 7550 contains a sophisticated defect and error management system for exceptional data reliability. iNAND 7550 will rewrite data from a defective sector to a good sector. This is completely transparent to the host and does not consume additional user data space. In the extremely rare case that a read error does occur, iNAND has innovative algorithms to recover the data. 1.5. MMC bus and Power Lines SanDisk iNAND 7550 with MMC interface supports the MMC protocol. For more details regarding these buses refer to JEDEC standards No. JESD84-B51. The iNAND bus has the following communication and power lines: 2 Refer to JEDEC Standards No. JESD84-B51 © 2017 Western Digital Corporation or its affiliates. All rights reserved -7- 80-36-08400 Confidential           SanDisk iNAND 7550 e.MMC 5.1 data sheet CMD: Command is a bidirectional signal. The host and iNAND operate in two modes, open drain and push-pull. DAT0-7: Data lines are bidirectional signals. Host and iNAND operate in push-pull mode. CLK: Clock input. RST_n: Hardware Reset Input. VCCQ: VCCQ is the power supply line for host interface. VCC: VCC is the power supply line for internal flash memory. VDDi: VDDi is iNAND’s internal power node, not the power supply. Connect 0.1uF capacitor from VDDi to ground. VSS, VSSQ: Ground lines. RCLK: Data strobe. VSF: Vendor specific functions used for debugging purposes. 1.5.1. Bus operating conditions Table 1 - Bus operating conditions Parameter Min Max Unit Peak voltage on all lines -0.5 VCCQ+0.5 V Input Leakage Current (before initializing and/or connecting the internal pull-up resistors) -100 100 µA -2 2 µA -100 100 µA -2 2 µA Input Leakage Current (after changing the bus width and disconnecting the internal pull-up resistors) Output Leakage Current (before initializing and/or connecting the internal pull-up resistors) Output Leakage Current (after changing the bus width and disconnecting the internal pull-up resistors) Table 2 – Power supply voltage Parameter Supply Voltage Symbol Min Max Unit VCCQ (Low) 1.7 1.95 V VCCQ (High) 2.7 3.6 V VCC 2.7 3.6 V VSS-VSSQ -0.3 0.3 V Note1: HS200, HS400 modes support only the 1.7 – 1.95 V VCCQ option Note2: Device operation under 3.3V VCCQ is limited to Max 1 hour © 2017 Western Digital Corporation or its affiliates. All rights reserved -8- 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 2. E.MMC 5.1 SELECTED FEATURES OVERVIEW iNAND 7550 supported feature list: e.MMC N/A N/A 4.41 4.41 4.41 4.41 4.41 4.41 4.41 4.41 4.5 4.5 4.5 4.5 4.5 4.5 4.5 4.5 5.0 5.0 5.0 5.1 5.1 5.1 5.1 5.1 5.1 5.2 Propriety Propriety Propriety Propriety Propriety Propriety Device Features INTERFACE BUS SPEED Benefit Speed Max theoretical Speed SECURE ERASE/TRIM BOOT AND MASS STORAGE PARTITIONING & PROTECTION BACKGROUND OPERATIONS POWER OFF NOTIFICATION HARDWARE RESET HPI RPMB EXTENDED PARTITION ATTRIBUTE LARGE SECTOR SIZE SANITIZE (4.51) PACKED COMMANDS DISCARD DATA TAG CONTEXT MANAGEMENT CACHE FIELD FIRMWARE UPGRADE (FFU) PRODUCTION STATE AWARENESS DEVICE HEALTH ENHANCE STROBE COMMAND QUEUE RPMB THROUGHPUT CACHE FLUSH AND BARRIER BKOPS CONTROLLER SECURE WP HS400 TUNING SMART-SLC VSF PNM DEVICE REPORT CONTENT-PRELOADING RPMB-KEY-RESET “True Wipe” One storage device (reduced BOM) Flexibility Better User Experience (low latency) Faster Boot; Responsiveness Robust System Design Control Long Reads/Writes Secure Folders Flexibility Potential performance “True Wipe” Reduce Host Overhead Improved Performance on Full Media Performance and/or Reliability Performance and/or Reliability Better Sequential & Random Writes Enables feature enhancements in the field Different operation during production Vital NAND info Sync between Device and Host in HS400 Responsiveness Faster RPMB write throughput Ordered Cache flushing Host control on BKOPs Secure Write Protect DLL Tuning command in HS400 Fast write speed per application need Enable on-board debugging Special product name Device Firmware status Preloading content at production line Resetting RPMB partition key © 2017 Western Digital Corporation or its affiliates. All rights reserved -9- Support HS400 Up to 400MB/s Yes Yes Yes Yes Yes Yes Yes Yes Yes No Yes Yes Yes Yes (API only) Yes (API only) Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 2.1. Field Firmware Upgrade (FFU) Field Firmware Updates (FFU) enables features enhancement in the field. Using this mechanism, the host downloads a new version of the firmware to the e.MMC device and instructs the e.MMC device to install the new downloaded firmware into the device. The entire FFU process occurs in the background without affecting the user / OS data. During the FFU process, the host can replace firmware files or single / all file systems. The secure FFU (sFFU) usage model for firmware upgrades is as follows: 1. sFFU files are generated and signed at the SanDisk lab 2. The sFFU files are handed to SanDisk’s customer 3. SanDisk’s customer can push the firmware updates to their end-users in a transparent way Note 1: The sFFU process and sFFU files are protected against leakage to unauthorized entities. Note 2: During the sFFU process the Host may retrieve the exact status of the process using the smart report feature. For additional information please refer to JESD84-B51 standard and the SanDisk application note on this subject. 2.2. Cache The e.MMC cache is dedicated volatile memory. Caching enables to improve iNAND performance for both sequential and random access. For additional information please refer to JESD84-B51 standard. 2.3. Discard iNAND supports discard command as defined in e.MMC 5.1 spec3. This command allows the host to identify data which is not needed, without requiring the device to remove the data from the Media. It is highly recommended for use to guarantee optimal performance of iNAND and reduce amount of housekeeping operation. 2.4. Power off Notifications iNAND supports power off notifications as defined in e.MMC 5.1 spec. The usage of power off notifications allows the device to prepare itself to power off, and improve user experience during power-on. Note that the device may be set into sleep mode while power off notification is enabled. Power off notification long allows the device to shutdown properly and save important data for fast boot time on the next power cycle. 3 For additional information refer to JEDEC Standard No. JESD84-B51 © 2017 Western Digital Corporation or its affiliates. - 10 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 2.5. Packed Commands To enable optimal system performance, iNAND supports packed commands as defined in e.MMC 5.1 spec. It allows the host to pack Read or Write commands into groups (of single type of operation) and transfer these to the device in a single transfer on the bus. Thus, it allows reducing overall bus overheads. 2.6. Boot Partition iNAND supports e.MMC 5.1 boot operation mode: Factory configuration supplies two boot partitions each 4MB in size for 32GB-256GB. 2.7. RPMB Partition iNAND supports e.MMC 5.1 RPMB operation mode: Factory configuration supplies one RPMB partition 16MB in size for 32GB-256GB. 2.8. Automatic Sleep Mode A unique feature of iNAND is automatic entrance and exit from sleep mode. Upon completion of an operation, iNAND enters sleep mode to conserve power if no further commands are received. The host does not have to take any action for this to occur, however, in order to achieve the lowest sleep current, the host needs to shut down its clock to the memory device. In most systems, embedded devices are in sleep mode except when accessed by the host, thus conserving power. When the host is ready to access a memory device in sleep mode, any command issued to it will cause it to exit sleep and respond immediately. 2.9. Sleep (CMD5) An iNAND 7550 device may be switched between a Sleep and a Standby state using the SLEEP/AWAKE (CMD5). In the Sleep state the power consumption of the memory device is minimized and the memory device reacts only to the commands RESET (CMD0) and SLEEP/AWAKE (CMD5). All the other commands are ignored by the memory device. The VCC power supply may be switched off in Sleep state to enable even further system power consumption saving. For additional information please refer to JESD84-B51. 2.10.Enhanced Reliable Write iNAND 7550 supports enhanced reliable write as defined in e.MMC 5.1 spec. Enhanced reliable write is a special write mode in which the old data pointed to by a logical address must remain unchanged until the new data written to same logical address has been successfully programmed. This is to ensure that the target address updated by the reliable write transaction never contains undefined data. When writing in reliable write, data will remain valid even if a sudden power loss occurs during programming. © 2017 Western Digital Corporation or its affiliates. - 11 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 2.11.Sanitize The Sanitize operation is used to remove data from the device. The use of the Sanitize operation requires the device to physically remove data from the unmapped user address space. The device will continue the sanitize operation, with busy asserted, until one of the following events occurs:     Sanitize operation is complete HPI is used to abort the operation Power failure Hardware reset Following a sanitize operation completion, no data should remain in the unmapped host address space. 2.12.Secure Erase For backward compatibility reasons, in addition to the standard erase command the iNAND 7550 supports the optional Secure Erase command4. This command allows the host to erase the provided range of LBAs and ensure no older copies of this data exist in the flash. 2.13.Secure Trim For backward compatibility reasons, iNAND 7550 supports Secure Trim command. The Secure Trim5 command is similar to the Secure Erase command but performs a secure purge operation on write blocks instead of erase groups. The secure trim command is performed in two steps: 1) Marks the LBA range as candidate for erase. 2) Erases the marked address range and ensures no old copies are left. 2.14.Partition Management iNAND 7550 offers the possibility for the host to configure additional split local memory partitions with independent addressable space starting from logical address 0x00000000 for different usage models. Therefore, memory block area scan be classified as follows  Factory configuration supplies two boot partitions (refer to section 2.7) implemented as enhanced storage media and one RPMB partitioning of 4MB in size (refer to section 2.8).  Up to four General Purpose Area Partitions can be configured to store user data or sensitive data, or for other host usage models. The size of these partitions is a multiple of the write protect group. Size can be programmed once in device life-cycle (one-time programmable). 4 For additional information refer to JEDEC Standards No. JESD84-B51 5 For additional information refer to JEDEC Standards No. JESD84-B51 © 2017 Western Digital Corporation or its affiliates. - 12 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 2.15.Device Health Device Health is similar to SMART features of modern hard disks; it provides only vital NAND flash program/erase cycles information in percentage of the flash life span. The host can query Device Health information utilizing standard MMC command, to get the extended CSD structure: DEVICE_LIFE_TIME_EST_TYP_A[268], The host may use it to query SLC device health information DEVICE_LIFE_TIME_EST_TYP_B[269], The host may use it to query TLC device health information The device health feature will provide a % of the wear of the device in 10% fragments. 2.16.EOL Status EOL status is implemented according to the e.MMC 5.1 spec. One additional state (state 4) was added to INAND 7550 which indicates that the device is in EOL mode. 2.17.Enhanced Write Protection To allow the host to protect data against erase or write iNAND 7550 supports two levels of write protect command  The entire iNAND 7550 (including the Boot Area Partitions, General Purpose Area Partition, and User Area Partition) may be write-protected by setting the permanent or temporary write protect bits in the CSD  Specific segments of iNAND 7550 may be permanently, power-on or temporarily write protected. Segment size can be programmed via the EXT_CSD register For additional information please refer to the JESD84-B51 standard. 2.18.High Priority Interrupt (HPI) The operating system usually uses demand-paging to launch a process requested by the user. If the host needs to fetch pages while in a middle of a write operation the request will be delayed until the completion of the write command. The high priority interrupt (HPI) as defined in JESD84-B51 enables low read latency operation by suspending a lower priority operation before it is actually completed. For additional information on the HPI function, refer to JESD84-B51. 2.19.H/W Reset Hardware reset may be used by host to reset the device, moving the device to a Pre-idle state and disabling the power-on period write protect on blocks that were power-on write protected before the reset was asserted. For more information, refer to JESD84-B51 standard. 2.20.Host-Device Synchronization Flow (Enhanced STROBE) The Enhanced STROBE feature as implemented in iNAND 7550 allows utilizing STROBE to synchronize also the CMD response: © 2017 Western Digital Corporation or its affiliates. - 13 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet   CMD clocking stays SDR (similar to legacy DDR52) Host commands are clocked out with the rising edge of the host clock (as done in legacy e.MMC devices)  iNAND 7550 will provide STROBE signaling synced with the CMD response in addition to DATA Out  Host may use the STROBE signaling for DAT and CMD-Response capturing eliminating the need for a tuning mechanism This feature requires support by the host to enable faster and more reliable operation. 2.21.Command-Queue e.MMC Command Queue enables device visibility of next commands and allows performance improvement. The protocol allows the host to queue up to 32 data-transfer commands in the device by implementing 5 new commands. The benefits of command queuing are:     Random Read performance improvement (higher IOPs) Reducing protocol overhead Command issuance allowed while data transfer is on-going Device order the tasks according to best access to/from flash 2.22.Frequent Used Commands in CmdQ The Frequent Used Commands feature permits the following commands to be sent by the host when queue is non-empty FLUSH, BARRIER and DISCARD. In addition, the Frequent Used Commands feature provides alternative encodings for these commands to facilitate faster processing in device. This feature can increase the effective performance when using Command Queue mode. 2.23.HS400 tuning This feature enables tuning command (CMD21) in HS400 mode, which may be used for calibration of DLL to compensate of PCB design/manufacturing differences. The Host may use adjustable sampling to determine the correct sampling point. A predefined tuning block stored in Device may be used by the Host as an aid for finding the optimal data sampling point. The Host can use CMD21 tuning command to read the tuning block. © 2017 Western Digital Corporation or its affiliates. - 14 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 3. PRODUCT SPECIFICATIONS 3.1. Typical Power Requirements Table 3 – iNAND 7550 Power Consumption Sleep (Ta=25°C@3.3/1.8V) 32GB 64GB 128GB 256GB Units HS400 Sleep (CMD5 – VCCQ, VCC off) 150 150 150 150 uA HS200 Sleep (CMD5 – VCCQ, VCC off) 150 150 150 150 uA Table 4 - iNAND 7550, Power Consumption Peak (Max) VCC / VCCQ (Ta=25°C@3.3V/1.8V) 32GB 64GB 128GB 256GB Units Active HS400 Peak [2µs window] VCC 170 270 450 450 mA Max [1ms window] VCCQ 330 340 360 360 mA Active Peak [2µs window] VCC 170 270 450 450 mA HS200 Max [1ms window] VCCQ 170 180 200 200 mA Table 5 - iNAND 7550, Power Consumption RMS VCC / VCCQ (Ta=25°C@3.3V/1.8V) RMS [100ms window] VCC HS400 RMS [100ms window] VCCQ RMS [100ms window] VCC HS200 RMS [100ms window] VCCQ 32GB 64GB 128GB 256GB Units Read 70 80 80 80 mA Write 50 90 125 125 mA Read 235 245 265 265 mA Write 130 160 190 190 mA Read 50 65 75 75 mA Write 50 75 85 85 mA Read 150 160 175 175 mA Write 130 145 160 160 mA © 2017 Western Digital Corporation or its affiliates. - 15 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 3.2. Operating Conditions 3.2.1. Operating and Storage Temperature Specifications Table 6 - Operating and Storage Temperatures Temperature Minimum and Maximum Operating* -25° C to 85° C Minimum and Maximum Non-Operating: After soldered onto PCBA -40° C to 85° C * Per e.MMC 5.1 specification (JESD84-B51): To achieve optimized power/performance, maximum Tcase temperature should not exceed 85°C. 3.2.2. Moisture Sensitivity The moisture sensitivity level for iNAND 7550 is MSL = 3. 3.3. Reliability SanDisk iNAND 7550 product meets or exceeds NAND type of products Endurance and Data Retention requirements as per evaluated representative usage models for designed market and relevant sections of JESD47I standard. Table 7 - Critical Reliability Characteristics Reliability Characteristics Description Uncorrectable Bit Error Rate (UBER) Uncorrectable bit error rate will not exceed one sector in the specified number of bits read. In such rare events data can be lost. 1 sector in 𝟏𝟎𝟏𝟓 bits read Write Endurance Specification (TBW) Write endurance is commonly classified in Total Terabytes Written (TBW) to a device. This is the total amount of data that can be written to the device over its useful life time and depends on workload written at certain operated temperature range. Total Terabytes Written [TBW] Per representative Android workload: Data Retention Specification (Years) Representative workload description:  80% Sequential write, 20% Random Write.  Distribution of IO Transaction Sizes: o 128KB: 1%  Cache On, Packed Off  Host data is 4K aligned  30% of product lifetime operate @85° C T-case  70% of product lifetime operate @55° C T-case Fresh or Early Life Device (A device whose total write cycles to the flash is less than 10% of the maximum endurance specification) Cycled Device (Any device whose total write cycles are between 10% of the maximum write endurance specification and equal to or exceed the maximum write endurance specification) © 2017 Western Digital Corporation or its affiliates. - 16 All rights reserved Value 32GB: 40[TB] 64GB: 80[TB] 128GB: 160[TB] 256GB: 320[TB] 10 years of Data Retention @ 25°C & 55°C 1 year of Data Retention @ 25°C & 55°C Note: In the case where the number of writes exceed the endurance spec read and Write performance can be intermediately reduced. 80-36-08400 Confidential 3.4. SanDisk iNAND 7550 e.MMC 5.1 data sheet Typical System Performance Table 8 – Typical Sequential Performance HS400 32GB 64GB 128GB 256GB Write (MBs) 150 230 260 260 Read (MBs) 300 300 300 300 HS200 Write (MBs) 130 130 130 130 Read (MBs) 160 170 170 170 Table 9 – Typical Random Performance HS400 32GB 64GB 128GB 256GB Write (IOPS) 15K 15K 15K 15K Read (IOPS) 20K 20K 20K 20K HS200 Write (IOPS) 6K 6K 6K 6K Read (IOPS) 10K 10K 10K 10K Note 1: Sequential Read/Write performance is measured under HS400 mode with a bus width of 8 bit at 200 MHz DDR mode, chunk size of 512KB, and data transfer of 1GB. Note 2: Random performance is measured with a chunk size of 4KB and address range of 1GB. Note 3: All performance is measured using SanDisk proprietary test environment, without file system overhead and host turnaround time (HTAT). Note 4: Write performance is measured for 100MB host payloads. © 2017 Western Digital Corporation or its affiliates. - 17 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 4. PHYSICAL SPECIFICATIONS The SanDisk iNAND 7550 is a 153-pin, thin fine-pitched ball grid array (BGA). See Figure 2 and Tables 10/11/12 for physical specifications and dimensions. Figure 2 - INAND 7550 Package Outline Drawing © 2017 Western Digital Corporation or its affiliates. - 18 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet Table 10 –Package Specification 32-256GB 32GB/64GB/128GB/256GB Dimension in millimeters Symbol Minimum Nominal Maximum A 0.8 1 A1 0.17 0.22 0.27 D 11.4 11.5 11.6 E 12.9 13 13.1 D1 - 6.5 - E1 - 6.5 - e - 0.5 - b 0.25 0.3 0.35 aaa 0.1 bbb 0.1 ddd 0.08 eee 0.15 fff 0.05 © 2017 Western Digital Corporation or its affiliates. - 19 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 5. INTERFACE DESCRIPTION 5.1. MMC I/F Ball Array 11 22 33 44 55 66 77 88 99 10 10 11 11 12 12 13 13 14 14 AA NC NC DAT0 DAT1 DAT2 VSS NC NC NC NC NC NC NC NC BB NC DAT3 DAT4 DAT5 DAT6 DAT7 NC NC NC NC NC NC NC NC CC NC Vddi NC VssQ NC VccQ NC NC NC NC NC NC NC NC DD NC NC NC NC NC NC VSF2 NC NC NC NC Index Index NC NC NC QRDY FF NC NC NC VCC VSF3 NC NC NC GG NC NC NC VSS NC NC NC NC HH NC NC NC RCLK VSS NC NC NC JJ NC NC NC VSS VCC NC NC NC KK NC NC NC RESET VSF4 NC NC NC LL NC NC NC NC NC NC M M NC NC NC VccQ CMD CLK NC NC NC NC NC NC NC NC NN NC VssQ NC VccQ VssQ NC NC NC NC NC NC NC NC NC PP NC NC VccQ VssQ VccQ VssQ NC NC NC NC NC NC NC NC VCC NC VSS NC NC VSF1 EE VSS VCC Figure 3 - 153 balls - Ball Array (Top View) © 2017 Western Digital Corporation or its affiliates. - 20 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 5.2. Pins and Signal Description Table 13 contains the SanDisk iNAND 7550, with MMC interface (153 balls), functional pin assignment. Table 11 – Functional Pin Assignment, 153 balls Ball No. Ball Signal A3 DAT0 A4 DAT1 A5 DAT2 B2 DAT3 B3 DAT4 B4 DAT5 B5 DAT6 B6 DAT7 Type Description I/O Data I/O: Bidirectional channel used for data transfer M5 CMD I/O Command: A bidirectional channel used for device initialization and command transfers. E5 QRDY O An optional pin, disabled by default, toggled by the device when the value of QSR changes. M6 CLK K5 RST_n H5 RCLK E6 VCC F5 VCC J10 VCC K9 VCC C6 VCCQ M4 VCCQ N4 VCCQ P3 VCCQ P5 VCCQ E7 VSS G5 VSS H10 VSS K8 VSS A6 VSS J5 VSS C4 VSSQ N2 VSSQ N5 VSSQ P4 VSSQ P6 VSSQ C2 VDDi E9 VSF1 E10 VSF2 F10 VSF3 K10 VSF4 Input Clock: Each cycle directs a 1-bit transfer on the command and DAT lines Hardware Reset Output Data Strobe Supply Flash I/O and memory power supply Supply Memory controller core and MMC I/F I/O power supply Supply Flash I/O and memory ground connection Supply Memory controller core and MMC I/F ground connection Internal power node. Connect 0.1uF capacitor from VDDi to ground Vendor Specific Function balls for test/debug. VSF VSF balls should be floating and be brought out to test pads. Note: All other pins are not connected [NC] and can be connected to GND or left floating © 2017 Western Digital Corporation or its affiliates. - 21 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 5.3. Registers value 5.3.1. OCR Register Parameter DSR slice Description Value Width Access Mode [30:29] Access mode 2h 2 [23:15] VDD: 2.7 - 3.6 range 1FFh 9 [14:8] VDD: 2.0 - 2.6 range 00h 7 [7] VDD: 1.7 - 1.95 range 1h 1 Note: Bit 30 is set because the device is High Capacity; bit 31 will be set only when the device is ready. 5.3.2. CID Register Parameter DSR slice Description Value Width MMC MID [127:120] Manufacturer ID 45h 8 CBX [113:112] Device BGA 01h 2 OID [111:104] OEM/Application ID 00h 8 PNM [103:56] Product name 32GB-DA4032 64GB-DA4064 128GB-DA4128 256GB-DA4256 48 PRV [55:48] Product revision 01h 8 PSN [47:16] Product serial number Random by Production 32 MDT [15:8] Manufacturing date month, year 8 CRC [7:1] Calculated CRC CRC7 Generator 7 Note: Please refer to the definition of the MDT field as defined in e.MMC Spec version 5.0. 5.3.3. DSR Register Parameter DSR slice Description Value Width RSRVD [15:8] Reserved 04h 8 RSRVD [7:0] Reserved 04h 8 Note: DSR is not implemented; in case of read, a value of 0x0404 will be returned. © 2017 Western Digital Corporation or its affiliates. - 22 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 5.3.4. CSD Register Parameter CSD Slice Description Value Width CSD_STRUCTURE [127:126] CSD structure 3h 3 SPEC_VERS [125:122] System specification version 4h 4 TAAC [119:112] Data read access-time 1 0Fh 8 NSAC [111:104] Data read access-time 2 in CLK cycles (NSAC*100) 00h 8 TRAN_SPEED [103:96] Max. bus clock frequency 32h 8 CCC [95:84] Card command classes 8F5h 12 READ_BL_LEN [83:80] Max. read data block length 9h 4 READ_BL_PARTIAL [79:79] Partial blocks for read allowed 0b 1 WRITE_BLK_MISALIGN [78:78] Write block misalignment 0b 1 READ_BLK_MISALIGN [77:77] Read block misalignment 0b 1 DSR_IMP [76:76] DSR implemented 0b 1 *C_SIZE [73:62] Device size FFFh 12 VDD_R_CURR_MIN [61:59] Max. read current @ VDD min 7h 3 VDD_R_CURR_MAX [58:56] Max. read current @ VDD max 7h 3 VDD_W_CURR_MIN [55:53] Max. write current @ VDD min 7h 3 VDD_W_CURR_MAX [52:50] Max. write current @ VDD max 7h 3 C_SIZE_MULT [49:47] Device size multiplier 7h 3 ERASE_GRP_SIZE [46:42] Erase group size 1Fh 5 ERASE_GRP_MULT [41:37] Erase group size multiplier 1Fh 5 WP_GRP_SIZE [36:32] Write protect group size 0Fh 5 WP_GRP_ENABLE [31:31] Write protect group enable 1h 1 DEFAULT_ECC [30:29] Manufacturer default 0h 2 R2W_FACTOR [28:26] Write speed factor 2h 3 WRITE_BL_LEN [25:22] Max. write data block length 9h 4 WRITE_BL_PARTIAL [21:21] Partial blocks for write allowed 0h 1 CONTENT_PROT_APP [16:16] Content protection application 0h 1 FILE_FORMAT_GRP [15:15] File format group 0h 1 COPY [14:14] Copy flag (OTP) 1h 1 PERM_WRITE_PROTECT [13:13] Permanent write protection 0h 1 TMP_WRITE_PROTECT [12:12] Temporary write protection 0h 1 FILE_FORMAT [11:10] File format 0h 2 ECC [9:8] ECC code 0h 2 CRC [7:1] Calculated CRC CRC7 Generator 7 © 2017 Western Digital Corporation or its affiliates. - 23 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 5.3.5. EXT_CSD Register Parameter ECSD slice Description Value S_CMD_SET [504] Supported Command Sets 1h HPI_FEATURES [503] HPI Features 1h BKOPS_SUPPORT [502] Background operations support 1h MAX_PACKED_READS [501] Max packed read commands 3Fh MAX_PACKED_WRITES [500] Max packed write commands 3Fh DATA_TAG_SUPPORT [499] Data Tag Support 1h TAG_UNIT_SIZE [498] Tag Unit Size 3h TAG_RES_SIZE [497] Tag Resources Size 3h CONTEXT_CAPABILITIES [496] Context management capabilities 5h LARGE_UNIT_SIZE_M1 [495] Large Unit size 0h EXT_SUPPORT [494] Extended partitions attribute support 3h SUPPORTED_MODES [493] FFU supported modes 3h FFU_FEATURES [492] FFU features 0h OPERATION_CODES_TIMEOU T [491] Operation codes timeout FFU_ARG BARRIER_SUPPORT [490:487] FFU Argument 0h [486] Cache barrier support 1h CMDQ_SUPPORT [308] Command queue support 1h CMDQ_DEPTH [307] Command queue depth 1Fh NUMBER_OF_FW_SECTORS_ CORRECTLY_PROGRAMMED [305:302] Number of FW sectors correctly programmed VENDOR_PROPRIETARY_HEA LTH_REPORT [301:270] DEVICE_LIFE_TIME_EST_TYP_ B [269] DEVICE_LIFE_TIME_EST_TYP_ A [268] PRE_EOL_INFO [267] Pre EOL information 1h OPTIMAL_READ_SIZE [266] Optimal read size 8h OPTIMAL_WRITE_SIZE [265] Optimal write size 8h OPTIMAL_TRIM_UNIT_SIZE [264] Optimal trim unit size 8h DEVICE_VERSION [263:262] Device version 5051h FIRMWARE_VERSION [261:254] Firmware version FW Version PWR_CL_DDR_200_360 [253] Power class for 200MHz, DDR at VCC= 3.6V 0h CACHE_SIZE [252:249] Cache size 1000h GENERIC_CMD6_TIME [248] Generic CMD6 timeout 19h POWER_OFF_LONG_TIME [247] Power off notification(long) timeout 19h BKOPS_STATUS [246] Background operations status Default = 0h 10h 0h Vendor proprietary health report 0h Device life time estimation type B (MLC) 1h Device life time estimation type A (SLC) 1h © 2017 Western Digital Corporation or its affiliates. - 24 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet Parameter ECSD slice Description CORRECTLY_PRG_SECTORS_N UM [245:242] Number of correctly programmed sectors INI_TIMEOUT_AP [241] 1st Initialization time after partitioning FFh CACHE_FLUSH_POLICY [240] Cache Flush Policy 1h PWR_CL_DDR_52_360 [239] Power class for 52MHz, DDR at VCC = 3.6V 0h PWR_CL_DDR_52_195 [238] Power class for 52MHz, DDR at VCC = 1.95V 0h PWR_CL_200_195 [237] Power class for 200MHz at VCCQ =1.95V, VCC = 3.6V 0h Power class for 200MHz, at VCCQ =1.3V, VCC = 3.6V 0h Minimum Write Performance for 8bit at 52MHz in DDR mode 0h Minimum Read Performance for 8bit at 52MHz in DDR mode 0h PWR_CL_200_130 MIN_PERF_DDR_W_8_52 MIN_PERF_DDR_R_8_52 Value Default = 0h [236] [235] [234] TRIM _MULT [232] TRIM Multiplier 3h SEC_FEATURE_SUPPORT [231] Secure Feature support 55h SEC_ERASE_MULT [230] Secure Erase Multiplier A6h SEC_TRIM_MULT [229] Secure TRIM Multiplier A6h BOOT_INFO [228] Boot Information 7h BOOT_SIZE_MULT [226] Boot partition size 20h ACCESS_SIZE [225] Access size 8h HC_ERASE_GROUP_SIZE [224] High Capacity Erase unit size 1h (see WP group size table below) ERASE_TIMEOUT_MULT [223] High capacity erase time out 3h REL_WR_SEC_C [222] Reliable write sector count 1h HC_WP_GRP_SIZE [221] High capacity write protect group size 10h (see WP group size table below) S_C_VCC [220] Sleep current [VCC] 32GB: 7h 64GB: 8h 128GB: 9h 256GB: Ah S_C_VCCQ [219] Sleep current [VCCQ] 7h PRODUCTION_STATE_AWARE NESS_TIMEOUT [218] Production state awareness timeout S_A_TIMEOUT SLEEP_NOTIFICATION_TIME [217] Sleep/Awake time out 13h [216] Sleep notification timeout 17h SEC_COUNT [215:212] Sector count See exported capacity table below SECURE_WP_INFO [211] Secure Write Protect Info 1h MIN_PERF_W_8_52 [210] Minimum Write Performance for 8bit @52MHz Ah MIN_PERF_R_8_52 [209] Minimum Read Performance for 8bit @52MHz Ah 17h © 2017 Western Digital Corporation or its affiliates. - 25 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet Parameter ECSD slice Description Value MIN_PERF_W_8_26_4_52 [208] Minimum Write Performance for 4bit @52MHz or 8bit @26MHz Ah Minimum Read Performance for 4bit @52MHz or 8bit @26MHz Ah MIN_PERF_R_8_26_4_52 [207] MIN_PERF_W_4_26 [206] Minimum Write Performance for 4bit @26MHz Ah MIN_PERF_R_4_26 [205] Minimum Read Performance for 4bit @26MHz Ah PWR_CL_26_360 [203] Power Class for 26MHz @ 3.6V 0h PWR_CL_52_360 [202] Power Class for 52MHz @ 3.6V 0h PWR_CL_26_195 [201] Power Class for 26MHz @ 1.95V 0h PWR_CL_52_195 [200] Power Class for 52MHz @ 1.95V 0h PARTITION_SWITCH_TIME [199] Partition switching timing 3h OUT_OF_INTERRUPT_TIME [198] Out-of-interrupt busy timing 19h DRIVER_STRENGTH [197] I/O Driver Strength 1Fh (Reporting four strengths, but supporting only one) CARD_TYPE [196:195] Card Type 57h CSD_STRUCTURE [194] CSD Structure Version 2h EXT_CSD_REV [192] Extended CSD Revision 8h CMD_SET [191] Command Set Default = 0h Updated in runtime CMD_SET_REV [189] Command Set Revision 0h POWER_CLASS [187] Power Class Dh HS_TIMING [185] High Speed Interface Timing Default = 0h Updated in runtime by the host DATA_STRB_MODE_SUPPOR T [184] Data strobe mode support 1h BUS_WIDTH [183] Bus Width Mode Default = 0h Updated in runtime by the host ERASE_MEM_CONT [181] Content of explicit erased memory range 0h PARTITION_CONFIG [179] Partition Configuration Default = 0h Updated in runtime by the host BOOT_CONFIG_PROT [178] Boot config protection Default = 0h Updated in runtime by the host BOOT_BUS_CONDITIONS [177] Boot bus width1 Default = 0h Updated in runtime by the host ERASE_GROUP_DEF [175] High-density erase group definition Default = 0h Updated in runtime by the host BOOT_WP_STATUS [174] Boot write protection status registers Default = 0h Updated in runtime BOOT_WP [173] Boot area write protect register © 2017 Western Digital Corporation or its affiliates. - 26 All rights reserved 0h 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet Parameter ECSD slice Description Value USER_WP [171] User area write protect register 0h FW_CONFIG [169] FW Configuration 0h RPMB_SIZE_MULT [168] RPMB Size 80h WR_REL_SET [167] Write reliability setting register 1Fh WR_REL_PARAM [166] [165] Write reliability parameter register Start Sanitize operation 15h SANITIZE_START Default = 0h Updated in runtime by the host BKOPS_START [164] Manually start background operations Default = 0h Updated in runtime by the host BKOPS_EN [163] Enable background operations handshake 2h RST_n_FUNCTION [162] H/W reset function Default = 0h Updated by the host HPI_MGMT [161] HPI management Default = 0h Updated by the host PARTITIONING SUPPORT [160] Partitioning support 7h Note: EUDA is not supported MAX_ENH_SIZE_MULT [159:157] Max Enhanced Area Size 0h PARTITIONS_ATTRIBUTE [156] Partitions Attribute Default = 0h Updated by the host PARTITION_SETTING_ [155] Partitioning Setting COMPLETED Default = 0h Updated by the host GP_SIZE_MULT [154:143] General Purpose Partition Size (GP4) 0h GP_SIZE_MULT [151:149] General Purpose Partition Size (GP3) 0h GP_SIZE_MULT [148:146] General Purpose Partition Size (GP2) 0h GP_SIZE_MULT [145:143] General Purpose Partition Size (GP1) 0h ENH_SIZE_MULT [142:140] Enhanced User Data Area Size 0h ENH_START_ADDR [139:136] Enhanced User Data Start Address 0h SEC_BAD_BLK_MGMNT [134] Bad Block Management mode 0h PRODUCTION_STATE_AWARE NESS [133] Production state awareness TCASE_SUPPORT [132] Package Case Temperature is controlled 0h PERIODIC_WAKEUP [131] Periodic Wake-up 0h PROGRAM_CID_CSD_DDR_S UPPORT VENDOR_SPECIFIC_FIELD [130] Program CID/CSD in DDR mode support 0h [127:64] Vendor Specific Fields Reserved NATIVE_SECTOR_SIZE [63] Native sector size 0h USE_NATIVE_SECTOR [62] Sector size emulation 0h DATA_SECTOR_SIZE [61] Sector size 0h 0h © 2017 Western Digital Corporation or its affiliates. - 27 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet Parameter ECSD slice Description Value INI_TIMEOUT_EMU [60] 1st initialization after disabling sector size emulation Ah CLASS_6_CTRL [59] Class 6 commands control 0h DYNCAP_NEEDED [58] Number of addressed group to be Released 0h EXCEPTION_EVENTS_CTRL [57:56] Exception events control 0h EXCEPTION_EVENTS_STATUS [55:54] Exception events status 0h EXT_PARTITIONS_ATTRIBUTE [53:52] Extended Partitions Attribute 0h CONTEXT_CONF [51:37] Context configuration Default = 0h PACKED_COMMAND_STATUS [36] Packed command status Default = 0h Updated in runtime PACKED_FAILURE_INDEX [35] Packed command failure index Default = 0h Updated in runtime POWER_OFF_NOTIFICATION [34] Power Off Notification Default = 0h Updated in runtime by the host CACHE_CTRL [33] Control to turn the Cache ON/OFF 0h FLUSH_CACHE [32] Flushing of the cache 0h BARRIER_CTRL [31] Cache barrier 0h MODE_CONFIG [30] Mode config 0h MODE_OPERATION_CODES [29] Mode operation codes 0h FFU_STATUS [26] FFU status 0h PRE_LOADING_DATA_SIZE [25:22] Pre loading data size 0h MAX_PRE_LOADING_DATA_S IZE [21:18] Max pre loading data size See Max Preloading size table below PRODUCT_STATE_AWARENES S_ENABLEMENT [17] Product state awareness enablement 3h AUTO_PRE_SOLDERING SECURE_REMOVAL_TYPE [16] Secure Removal Type 8h CMDQ_MODE_EN [15] Command queue 0h © 2017 Western Digital Corporation or its affiliates. - 28 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 5.3.6. User Density The following table shows the capacity available for user data for the different device sizes: Table 12: Capacity for user data Capacity LBA [Hex] 32GB 0x3A3E000 64GB 0x747C000 128GB 0xE8F6000 256GB 0x1D1F0000 Table 13: Write protect group size Capacity HC_ERASE_GROUP_SIZE HC_WP_GRP_SIZE Erase Unit Size [MB] Write Protect Group Size [MB] 32GB 0x1 0x10 0.5MB 8MB 64GB 0x1 0x10 0.5MB 8MB 128GB 0x1 0x10 0.5MB 8MB 256GB 0x1 0x10 0.5MB 8MB Table 14: Max Preloading Data Size Capacity Max preloading Image size (in LBA Hex) Max preloading Image in MB 32GB 1,338,4C8 9,840 64GB 2,670,998 19,681 128GB 4,CE0,8A0 39,361 256GB 9,9C2,660 78,724 © 2017 Western Digital Corporation or its affiliates. - 29 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 6. HW APPLICATION GUIDELINES 6.1. Design Guidelines          The e.MMC specification enforces single device per host channel; multi-device configuration per a single host channel is not supported. CLK, RCLK(DS), CMD and DATx lines should be connected to respected host signals. The e.MMC specification requires that all signals will be connected point-to-point, i.e. a single e.MMC device per host channel. The e.MMC hardware reset signal (RST_n) is not mandatory and could be connected to the host reset signal or left unconnected (floating) if not used. All power supply and ground pads must be connected. Make sure pull-up resistors are placed on schematic in case these are external. For further details please refer to “Table 16 - Pull-ups Definition” Bypass capacitors shall be placed as close to the e.MMC device as possible; normally it is recommended to have 0.1uF and 4.7uF capacitors per power supply rail, though specific designs may include a different configuration in which there are more than two capacitors: o VCC and VCCQ slew rates shall be minimally affected by any bypass capacitors configuration o It is recommended to verify the bypass capacitors requirement in the product data sheet VDDi bypass capacitor shall be placed on the PCB. The VDDi is an internal power node for the controller and requires capacitor in range 0.1uF – 2.2uF connected between VDDi pad and ground Vendor Specific Function (VSF) pins should be connected to accessible test points on the PCB (TP on schematic below). It’s recommended to have accessible ground (GND) pads near each TP on PCB It is recommended to layout e.MMC signals with controlled impedance of 45-55 Ohm referencing to adjusted ground plane © 2017 Western Digital Corporation or its affiliates. - 30 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 6.2. Capacitor Selection & Layout Guidelines SanDisk iNAND 7550 has three power domains assigned to VCCQ, VCC and VDDi, as shown in Table 17 below. Pin Power Domain Comments VCCQ Host Interface Supported voltage ranges: Low Voltage Region: 1.8V (nominal) VCC Memory Supported voltage range: High Voltage Region: 3.3V (nominal) VDDi Internal VDDi is the internal regulator connection to an external decoupling capacitor. Table 15- 7550 Power Domains It is recommended that the power domains connectivity will follow figure 4: Top View Capacitor C_3/4:  Capacitor C3 >= 4.7uF  Capacitor C4 =< 0.1uF  X5R or X7R  Voltage > 6.3V Trace Requirements:  Resistance < 0.5[Ω]  Inductance < 3n[Hy] Placement:  Closest to ball F5 C_3 C_4 Capacitor C_5:  Capacitor >= 0.1uF  Capacitor =< 2.2uF  X5R or X7R  Voltage > 6.3V Trace Requirements:  Resistance < 0.5[Ω]  Inductance < 3n[Hy] Placement:  Closest to ball C2 C_5 14 14 NC NC NC NC NC NC NC NC NC NC NC NC NC NC 13 13 NC NC NC NC NC NC NC NC NC NC NC NC NC NC 12 12 NC NC NC NC NC NC NC NC NC NC NC NC NC NC 11 11 NC NC NC NC NC NC 10 10 NC NC NC VSF2 VSF4 NC NC NC 99 NC NC NC VSF1 VCC NC NC NC 88 NC NC NC NC VSS NC NC NC 77 NC NC NC VSS NC NC NC NC 66 VSS DAT7 VccQ VCC NC CLK NC VssQ 55 DAT2 DAT6 NC QRDY RESET CMD VssQ VccQ 44 DAT1 DAT5 VssQ NC VccQ VccQ VssQ 33 DAT0 DAT4 NC NC NC NC NC NC NC NC NC NC NC VccQ 22 NC DAT3 Vddi NC NC NC NC NC NC NC NC NC VssQ NC 11 NC NC NC NC NC NC NC NC NC NC NC NC NC NC AA BB CC DD FF GG HH JJ KK LL VSF3 VCC NC VSS VSS RCLK VCC VSS Capacitor C_1/2:  Capacitor C1 >= 4.7uF  Capacitor C2 =< 0.1uF  X5R or X7R  Voltage > 6.3V Trace Requirements:  Resistance < 0.5[Ω]  Inductance < 3n[Hy] Placement:  Closest to ball P3 C_1 EE M M NN C_2 PP Figure 4 - Recommended Power Domain Connectivity Note: Signal routing in the diagram is for illustration purposes only and the final routing depends final PCB layout. For clarity, the diagram does not include VSS connection. All balls marked VSS shall be connected to a ground (GND) plane. © 2017 Western Digital Corporation or its affiliates. - 31 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet It is recommended to use a X5R/X7R SMT-Ceramic capacitors rated for 6.3V/10V with footprint of 0402 or above. When using ceramic capacitor, it should be located as close to the supply ball as possible. This will eliminate mounting inductance effects and give the internal IC rail a cleaner voltage supply Make all of the power (high current) traces as short, direct, and thick as possible. The capacitors should be as close to each other as possible, as it reduces EMI radiated by the power traces due to the high switching currents through them. In addition, it shall also reduce mounting inductance and resistance as well, which in turn reduces noise spikes, ringing, and IR drop which produce voltage errors. The grounds of the IC capacitors should be connected close together directly to a ground plane. It is also recommended to have a ground plane on both sides of the PCB, as it reduces noise by reducing ground loop. The loop inductance per capacitor shall not exceed 3nH (both on VCC/VCCQ & VSS/VSSQ loops). Cin2 shall be placed closer (from both distance & inductance POV) to the iNAND power & ground balls. Multiple via connections are recommended per each capacitor pad. It is recommended to place the power and ground vias of the capacitor as close to each other as possible. On test platforms, where the iNAND socket is in use, the loop inductance per capacitor shall not exceed 5nH (both on VCC/VCCQ & VSS/VSSQ loop). No passives should be placed below the iNAND device (between iNAND & PCB). VSF balls (VSF1/4) should have exposed and floated test pads on the PCB, with near exposed GND for better measurement. Signal Traces:   Data, CMD, CLK & RCLK bus trace length mismatch should be minimal (up to +/-1mm). Traces should be45-55 ohm controlled impedance. © 2017 Western Digital Corporation or its affiliates. - 32 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 6.3. Reference Schematics Figure 5 – e.MMC Reference Schematics Parameter Pull-up resistance for DAT0–7 Pull-up resistance for CMD Symbol RDAT Min 10 RCMD Pull-down resistance for Data Strobe (RCLK) RPD Typ Max 100(1) Unit Kohm Remark to prevent bus floating 4.7 100(1) Kohm to prevent bus floating 10 47 Kohm At HS400 mode Table 16 – Pull-ups Definition (1) Recommended maximum pull-up is 50Kohm for 1.8V interface supply voltages. A 3V part may use the whole range up to 100Kohms Recommended capacitors: CAPACITOR VALUE 4.7uF 0.1uF 2.2uF MANUFACTURER MURATA TAIYO YUDEN MURATA KYOCERA PANASONIC SAMSUNG © 2017 Western Digital Corporation or its affiliates. - 33 All rights reserved MANUFACTURER P/N GRM185R60J475ME15D JMK107BJ475MK-T GRM155R71A104KA01D CM05X5R104K06AH ECJ0EB0J225M CL05A225MQ5NSNC 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 7. PROPRIETY INAND 7550 FEATURE OVERVIEW 7.1. Content Preloading Operation Mode High temperature during IR-Reflow process on 3D - X3 flash devices cause significant increase of read errors on TLC blocks (Uncorrectable read errors of data that was programmed before the IR Reflow process). This high level of read errors is higher compared to previous flash technologies Currently this level of errors cannot be fixed by special error correction algorithms (as it was done in previous flash technologies) To overcome these challenges iNAND 7550 introduced the Pre-Loading feature, which solves the IR-Reflow process’s reliability, by writing the preloaded data to the SLC area of the device. Every iNAND 7550 fresh device is defined to start in Implicit Loading state. There are several of exit triggers that will switch it to Migration state. Once Migration is completed the device will start to work in normal state. Figure 6 - Pre-Loading flow During Implicit mode all written data (the preloaded data before IR-Reflow) will be written to the SLC area of the device. Max preloading data allowed is 33% from device exported capacity. Triggers to exit implicit mode and start Migration stage are:    Host accumulated written data payload that is >33% of the exported capacity. Host switches interface to High-Speed bus (HS200/HS400). (Recommended) Host issues Vendor Specific command signals to device signaling “IRReflow completed”. Triggers to reset Implicit mode counters (Only possible during Implicit mode and if device switched already to Migration stage there is no option to reverse/reset it to Implicit stage anymore)  Host erases the whole written user area. © 2017 Western Digital Corporation or its affiliates. - 34 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet  Host issues Vendor Specific command of “Production Restore To Default”  Firmware Download During Migration state the device will do automatic relocation of the preloaded data written to SLC blocks during implicit mode to TLC blocks, after IR reflow. It is recommended to allow system BKOPs during IDLE time that will expedite the folding of the preloaded data from SLC to the TLC. © 2017 Western Digital Corporation or its affiliates. - 35 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 7.2. SmartSLC The iNAND SmartSLC feature gives the customer the write performance they require, so that they will have a UX experience that makes an X3 memory look better than X2. The iNAND SmartSLC provides the following value to the system:  Auto-adjust iNAND performance per application need  Improves system efficiency and UX – Reduce system WRITE-BUSY time by improving IO throughput  Vertical iNAND technology: – Host access to iNAND NAND flash performance capabilities – Controller and Firmware auto-detections of hosts needs and auto-adjustment device behavior based on these host needs – Host (e.MMC driver) customizations and modifications in IDLE time management to allow optimized utilization of SmartSLC capabilities iNAND 7550 uses allocated SLC blocks within the SanDisk NAND design to implement the feature. The allocation of these blocks does not impact the as sold capacity of the device (Exported Capacity). The device uses a detection mechanism and once a pattern requiring sequential write performance is detected, the device postpones any background management operations, if feasible,) and dedicates resources to SLC programing. Any IDLE state bigger than tIDLE [ms], shall trigger migration operations to free up enough space for the next burst and eliminate potential performance drop. iNAND SmartSLC buffer size and Performance for SDINBDA4-xxxG products (BigFile Mode): Capacity (GB) 32GB 64GB 128GB 256GB Buffer Size (GB) 8 16 32 64 Write speed* (MB/s) 150 230 260 260 * Sequential write Performance is measured using SanDisk proprietary test environment, without file system overhead and host turn-around time (HTAT), 512KB chunk, enough recovery time before measurement @ HS400. Emptying the iNAND SmartSLC buffer There are a number of host enabled mechanisms that can be used to empty the SmartSLC buffer (migration). All of these modes can be enabled at the same time or only a single or a few modes can be selected. The more modes that are supported by the host, the more the buffer will be available and empty for use in observing host high speed payloads. During migration time there won’t be degradation of device performance and no impact on latency and system responsiveness. Host optional configuration for iNAND SmartSLC: 1. IDLE only mode (PoN=1) – Recommended option. © 2017 Western Digital Corporation or its affiliates. - 36 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 2. BKOPs APIs with HPI 3. Sleep Notification before standby (CMD5) 1. Host allow House-Keeping during IDLE (Auto BKOPs) 2. Host periodically send BKOPs API (Manual BKOPs) SmartSLC Buffer migration Migration during in system IDLE with HPI Migration during in system IDLE with HPI Migration during BKOPs Busy EXT_CSD REV[192] AUTO_EN BKOPS_EN[163][1] POWER_OFF_NOTIFICATION [34] (PON activated) BKOPS_EN BKOPS_EN[163][0] POWER_OFF_NOTIFICATION [34] (Sleep Notification) 7h (e.MMC 5.0) 8h (e.MMC 5.1) 7h or 8h (e.MMC 5.0/5.1) Don’t care 1h 0h 1h (POWERED_ON) 1h (POWERED_ON) Don’t care Don’t care Don’t care 1h No No No Standby mode CMD5 If system uses CMD5 it is requires 5-10sec delay before CMD5 transmission If system uses CMD5 it is requires 5-10sec delay before CMD5 transmission Don’t care © 2017 Western Digital Corporation or its affiliates. - 37 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 7.3. Device Report iNAND 7550 introduce new proprietary Device Report feature that reflects the Firmware and Device status.    Enabling Device Report Mode: Send CMD62 with argument of 0x96C9D71C - R1b Response will be returned Reading Device Report Data: Once the host enters Device Report mode, CMD63 with argument 0x00000000 will retrieve the report - 512 Bytes will be returned to the host (Note: CMD63 behaves similarly to CMD17) Resume Normal Operation Mode: Once the Device Report read command (CMD63) was completed, the device automatically goes out of Device Report mode, and resumes normal operation mode. Field Name Description Motivation (Host perspective) Offset (Dec) Size (Bytes) Average Erase Cycles Type C (Enhanced) The Average Erase cycles value out of all Enhanced area Blocks 0 4 Average Erase Cycles Type A (SLC) The Average Erase cycles value out of all SLC Blocks 4 4 Average Erase Cycles Type B (TLC) The Average Erase cycles value out of all TLC Blocks 8 4 Read reclaim count Type C (Enhanced) The amount of Enhanced Reads operations which passed ReadScrub thresholds and requires reclaim The amount of SLC Reads operations which passed ReadScrub thresholds and requires reclaim The amount of TLC Reads operations which passed ReadScrub thresholds and requires reclaim Number of Bad Blocks detected during manufacturing process All Bad Blocks related to the Enhanced area that were detected during run-time To check real life product endurance and lifetime To check real life product endurance and lifetime To check real life product endurance and lifetime To check iNAND dataretention preventions mechanism on management area To check iNAND dataretention preventions mechanism on SLC area To check iNAND dataretention preventions mechanism on TLC area To check device number of Bad-Blocks To check device runtime number of BadBlocks on Management area To check device runtime number of BadBlocks on SLC area To check device runtime number of BadBlocks on TLC area To know that number of times sFFU operations 12 4 16 4 20 4 24 4 28 4 32 4 36 4 40 4 Read reclaim count Type A (SLC) Read reclaim count Type B (TLC) Bad Block Manufactory Bad Block Runtime Type C (Enhanced) Bad Block Runtime Type A (SLC) Bad Block Runtime Type B (TLC) Field FW Updates Count All Bad Blocks related to the SLC area that were detected during run-time All Bad Blocks related to the TLC area that were detected during run-time Number of secure Field Firmware Upgrades (sFFU) done © 2017 Western Digital Corporation or its affiliates. - 38 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet FW Release Date from the beginning of the device life time Firmware Release date FW Release Time Firmware Release hour Cumulative Host Write data size Accumulate the amount of Host Written payload in resolution of 100MB Cumulative counter for voltage drops (Power-Off) during all device states (Idle/Read/Write/Erase). Counts the times VDET indication was triggered due to Power-Droop (Slight powerdroop below certain threshold and for a very short period of time). Count the number of times iNAND dismiss new Host data due to Write Abort (either due to corrupted data or broken) command The total amount of recovery operations required to be done by the device while detecting internal slight power-droop Accumulate the amount of Host written payload that was written to SmartSLC buffer in resolution of 100MB Accumulate the amount of Host written payload that was written to SmartSLC BigFile buffer in resolution of 100MB Count the number of times Host wrote payload to SmartSLC BigFile mode Number Vcc Voltage Drops Occurrences Number Vcc Voltage Droops Occurrences Number of failures recover new host data (After Write Abort) Total Recovery Operation After VDET Cumulative SmartSLC write payload Cumulative SmartSLC BigFile mode write payload Number of times SmartSLC BigFile mode was operated during device lifetime Average Erase Cycles of SmartSLC BigFile mode Cumulative Initialization Count Max Erase Cycles Type C (Enhanced) Max Erase Cycles Type A (SLC) Max Erase Cycles Type B (TLC) Min Erase Cycles Type C (Enhanced) The Average Erase count of SmartSLC BigFile buffer Number of device power ups event from beginning of life The Maximum Erase value out of all enhanced Blocks The Maximum Erase value out of all SLC Blocks The Maximum Erase value out of all TLC Blocks The Minimum Erase value out of all enhanced Blocks © 2017 Western Digital Corporation or its affiliates. - 39 All rights reserved were done on the device To identify device Firmware To identify device Firmware To analyze host total write payload and typical daily workload To identify unstable power supply platform behavior 44 12 56 8 64 4 68 4 To identify unstable power supply platform behavior 72 4 To analyze write abort behaver by device 76 4 To analyze device recovery after VDET event occurs 80 4 To Track and analyze iNAND SmartSLC behavior 84 4 To Track and analyze iNAND SmartSLC BigFile mode behavior 88 4 To Track and analyze iNAND SmartSLC BigFile mode behavior 92 4 To track and analyze iNAND SmartSLC BigFile mode behavior To analyze number of initialization events happened during device lifetime To Check product endurance variance To Check product endurance variance To Check product endurance variance To Check product endurance variance 96 4 100 4 104 4 108 4 112 4 116 4 80-36-08400 Confidential Min Erase Cycles Type A (SLC) Min Erase Cycles Type B (TLC) Reserved Pre EOL warning level Type C (Enhanced) Pre EOL warning level Type B (TLC) Uncorrectable Error Correction Code Current temperature Min Temperature Max Temperature Reserved Enriched Device Health Type C (Enhanced) Enriched Device Health Type B (TLC) reserved Current Power mode SanDisk iNAND 7550 e.MMC 5.1 data sheet The Minimum Erase value out of all SLC Blocks The Minimum Erase value out of all TLC Blocks Pre end-of-life (EOL) levels for device enhanced area: 1 – Normal 2 – Warning 3 – Urgent 4 – Device at EOL and entered Read Only mode. Pre end-of-life (EOL) levels for device TLC area: 1 – Normal 2 – Warning 3 – Urgent 4 – Device at EOL and entered Read Only mode. The amount of UECC by the device Indicates the current temperature of the device, in degrees Celsius Indicates the min temperature recorded in the device, in degrees Celsius, throughout power cycles. Indicates the max temperature recorded in the device, in degrees Celsius, throughout power cycles. Device health (age) Level in resolution of 1% (1-100) for Enhanced area Device health (age) Level in resolution of 1% (1-100) for TLC area Device internal power state (5 states: highest 4 – lowest 0) Enriched Device Health Type A (SLC) Device health (age) Level in resolution of 1% for SLC area Pre EOL warning level Type A (SLC) Pre end-of-life (EOL) levels for SLC area: 1 – Normal 2 – Warning 3 – Urgent 4 – Device at EOL and entered Read Only mode. © 2017 Western Digital Corporation or its affiliates. - 40 All rights reserved To Check product endurance variance To Check product endurance variance 120 4 124 4 128-151 152 24 4 To predict early lifetime of device 156 4 To analyze UECC probability during real lifetime To track device environmental status To track device environmental status 160 4 164 4 168 4 To track device environmental status 172 4 176 180 4 4 184 4 188-190 191 3 1 192 4 196 4 To predict early lifetime of device To check real life product endurance and lifetime To check real life product endurance and lifetime To know internal device power/performance state To check real life product endurance and lifetime To predict early lifetime of device 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet Power-Loss indications: iNAND 7550 is also serving the host by notifying him on cases of Power-Loss events and internal handling of those events. A dedicated field in the EXT_CSD register was allocated to indicate the occurrence of Power Loss/Write Abort during the last power down. This field reports if a Power Loss was detected and recovered during the last power-up. In order to retrieve this field, the host should issue CMD8 command – SEND_EXT_CSD. This command returns full EXT_CSD structure – 512 bytes as block of data. Following is the EXT_CSD field details: Name Power Loss indication Field POWER_LOSS_REPORT Size (bytes) 1 Cell Type R Hex Offset 0x79 Dec. Offset 121 POWER_LOSS_REPORT[121] details:  Bit[2]: RECOVERY_SUCCESS 0x1: Recovery passed successfully 0x0: Recovery failed  Bit[1]: RECOVER_OLD_DATA 0x1: Recovery to old copy of data 0x0: No data recovery required  Bit[0]: POWER_LOSS_DETECTED 0x1: Unexpected Power Loss was detected - Detection is done during initialization, immediately after Power-Up Note: In case Power Loss did not occur on last shut down, this register will show 0x00 Unstable Power-Supply indications: In case of Flash voltage drop, the iNAND may not be able to recover the data that was already transferred to the iNAND device, but wasn’t committed in the Flash. In this case the iNAND will “abort” the current host write and return back to the host with an error indication. iNAND 7550 will use BIT19 and BIT20 (cc_error) in the command response to indicate VDET error status to the host. the VDET error indication can be seen only if CMD13 was issued, or in the next command response. Examples:  Open Mode (CMD25+CMD12+CMD13): In both cases, where the voltage droop occurs before or after CMD12: CMD12 response will not have BIT19 and BIT20 set. CMD13 will identify the error indication - BIT19 and BIT20 will be set in CMD13 response Note: The host may send many CMD13 and the BIT19 will be set only in first CMD13 after releasing the busy.  Close Mode (CMD23+CMD25+CMD13): CMD13 will identify the error indication - BIT19 and BIT20 will be set in CMD13 response  Single Block Mode (CMD24+CMD13): CMD13 will identify the error indication - BIT19 and BIT20 will be set in CMD13 response Host shall retry latest command as long as the VDET error indication on CMD13 response (or next command response (BIT19 and BIT20 are set) is still set © 2017 Western Digital Corporation or its affiliates. - 41 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 7.4. RPMB Key Reset iNAND Product line implements RPMB as specified by the eMMC specification ver. 5.1 (initially introduced in eMMC ver 4.4). RPMB is an eMMC partition – “Replay Protected Memory Block”. RPMB is used by the host to store data for security purposes. The host programs a key to the eMMC in a secure environment and uses this key to access the RPMB. Writing to this partition can only be done by the host who programmed the RPMB key. Anyone can read the data but only the host with the key can write to it. Pairing between host and eMMC (programming the key) is done in a secure environment such as production line. In cases where a phone is returned back to the OEM for repair and the host chipset is found defective, it would require replacement of both the host SOC and the eMMC chip This is due to the fact that there is a unique key per SOC which is created by the SOC itself, so no one else besides the defective SOC knows what the key is. Without a method to reset RPMB, the only way to repair a broken phone is highly expensive operation since it requires physical replacement of the memory with a new one (along with the chipset). The new RPMB Key feature would be added to iNAND 7550 and that would offer a solution for the problem described above which will enable the OEM to reset the key once required. The feature obligates the OEM to program a unique OEM key which would later enable the use of the RPMB reset key function. In case the OEM key is not programmed prior to the RPMB key, the Reset key function cannot be used. The secure protocol relies on CMD62, CMD63 which are vendor specific, as well as CMD24. The device holds a 512 bytes’ status register which is updated on every command. The register contains the status of the last command as well as a counter that is needed for the protocol operation. The host may read this register at any time. © 2017 Western Digital Corporation or its affiliates. - 42 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet 8. MARKING First row: Simplified SanDisk Logo Second row: Sales item P/N Third row: Country of origin i.e. ‘TAIWAN’ or ‘CHINA’ * No ES marking for product in mass production. Fourth row: Y- Last digit of year WW- Work week D- A day within the week. MTLLLXXX – Internal use 2D barcode: Store the 12 Digital unique ID information as reflected in the fourth row. Figure 7 - Product marking 64G-256GB 9. ORDERING INFORMATION Table 19 – Ordering Information Capacity Technology Part Number Package e.MMC 32GB 3D-64L-X3 SDINBDA4-32G 11.5x13x1.0mm 5.1 64GB 3D-64L-X3 SDINBDA4-64G 11.5x13x1.0mm 5.1 128GB 3D-64L-X3 SDINBDA4-128G 11.5x13x1.0mm 5.1 256GB 3D-64L-X3 SDINBDA4-256G 11.5x13x1.0mm 5.1 32GB 3D-64L-X3 SDINBDA4-32-V 11.5x13x1.0mm 5.1 64GB 3D-64L-X3 SDINBDA4-64-V 11.5x13x1.0mm 5.1 128GB 3D-64L-X3 SDINBDA4-128-V 11.5x13x1.0mm 5.1 256GB 3D-64L-X3 SDINBDA4-256-V 11.5x13x1.0mm 5.1 © 2017 Western Digital Corporation or its affiliates. - 43 All rights reserved 80-36-08400 Confidential SanDisk iNAND 7550 e.MMC 5.1 data sheet Note1: Customer Code (optional) will be added at the end of the part number. The Customer Code can be 3 or 4 digits. Example: Customer Customer A Customer B Customer C Customer Code 326 473 1243 Customer Part Number SDINBDA4-256-326 SDINBDA4-64-473 SDINBDA4-128-1243 Note2: Unique Identifier (optional) is a single character identifier specifying certain FW/HW version. For example, the unique identifier (in this case, K) in SDINBDA4-128G-K specifies a certain FW version, while different unique identifier (in this case, N) in SDINBDA4-128G-N can specify a different FW version © 2017 Western Digital Corporation or its affiliates. - 44 All rights reserved 80-36-08400 Ordering Information DOC-04417 SanDisk iNAND 7350 e.MMC 5.1 HS400 I/F data sheet HOW TO CONTACT US Western Digital Technologies, Inc. 951 SanDisk Dr. Milpitas, CA 95035-7933 Phone: +1-408-801-1000 OEMProducts@SanDisk.com Please refer to SanDisk’s web site for contact information: www.sandisk.com SanDisk is a registered trademark of Western Digital Corporation or its affiliates, registered in the United States and other countries. microSD, microSDHC, microSDXC and SD marks and logos are trademarks of SD3C, LLC. Other brand names mentioned herein are for identification purposes only and may be the trademarks of their respective holder(s). © 2017 Western Digital Corporation or its affiliates. All rights reserved. © 2017 Western Digital Corporation or its affiliates. All rights reserved - 45 - 80-36-08400
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