BZV55C1V0 THRU BZV55C75
Silicon Epitaxial Planar Zener Diodes
LL-34
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Value
Unit
Ptot
500 1)
mW
Tj
175
O
Tstg
- 55 to + 175
O
Symbol
Max.
Unit
RthA
0.3 1)
K/mW
VF
1
V
C
C
Valid provided that electrodes are kept at ambient temperature
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 100 mA
1)
Symbol
Valid provided that electrodes are kept at ambient temperature
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PAGE 1
BZV55C1V0 THRU BZV55C75
Characteristics at Ta = 25 OC
Zener Voltage Range 1)
Type
BZV55C1V0
BZV55C2V0
BZV55C2V2
BZV55C2V4
BZV55C2V7
BZV55C3V0
BZV55C3V3
BZV55C3V6
BZV55C3V9
BZV55C4V3
BZV55C4V7
BZV55C5V1
BZV55C5V6
BZV55C6V2
BZV55C6V8
BZV55C7V5
BZV55C8V2
BZV55C9V1
BZV55C10
BZV55C11
BZV55C12
BZV55C13
BZV55C15
BZV55C16
BZV55C18
BZV55C20
BZV55C22
BZV55C24
BZV55C27
BZV55C30
BZV55C33
BZV55C36
BZV55C39
BZV55C43
BZV55C47
BZV55C51
BZV55C56
BZV55C62
BZV55C68
BZV55C75
1)
VZnom
Dynamic Resistance
Reverse Leakage Current
Temp. Coefficient
of Zener Voltage
VZT
at lZT
ZZT
ZZK
at IZK
Ta = 25 OC
Ta = 125 oC
at VR
(V)
(V)
(mA)
Max. (Ω)
Max. (Ω)
(mA)
Max. (µA)
Max. (µA)
(V)
TKvz (%/K)
0.75
2
2.2
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
0.7...0.8
1.8...2.15
2.08...2.33
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
4.4...5
4.8...5.4
5.2...6
5.8...6.6
6.4...7.2
7...7.9
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
8
85
85
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
200
250
50
600
600
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
500
600
700
700
1000
1000
1000
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
100
75
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
200
160
100
50
40
40
40
40
20
10
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
5
5
5
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
-0.26...-0.23
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.06...-0.03
-0.05...+0.02
-0.02...+0.02
-0.05...+0.05
0.03...0.06
0.03...0.07
0.03...0.07
0.03...0.08
0.03...0.09
0.03...0.1
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
Tested with pulses tp = 20 ms.
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PAGE 2
BZV55C1V0 THRU BZV55C75
Pulse thermal resistance
versus pulse duration
Dynamic resistance
versus Zener current
Valid provided that the electrodes are kept
at ambient temperature.
K/W
10
3
1000
o
Tj=25 C
7
5
5
4
rthA
rzj
3
2
3
2
0.5
2
100
10
7
4
0.2
5
5
4
4
0.1
3
3
0.05
2
2
0.02
10
0.01
10
3.6
4.7
5
5
4
tp
4
3
tp
V=
3
PI
T
2
10-5
10
-4
-3
10 10
-2
10
tp
5.6
1
-1
0.1
10 S
1
2
5
1
2
5
10
Dynamic resistance
versus Zener current
100
pF
1000
o
Tj=25 C
o
Tj=25 C
7
rzj
5
4
5
4
3
VR=1V
3
33
2
VR=2V
27
22
10
18
100
7
15
5
4
VR=1V
5
VR=2V
12
3
4
3
10
2
6.8/8.2
2
6.2
1
10
100mA
5
2
Iz
Capacitance versus
Zener voltage
2
5.1
2
T
1
Ctot
2.7
V=0
7
1
2345
10
2345
5
1
2
5
2
5
100mA
100V
Vz at Iz=5 mA
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0.1 2
10
Iz
PAGE 3
BZV55C1V0 THRU BZV55C75
Thermal differential resistance
versus Zener voltage
Dynamic resistance
versus Zener current
10
Valid provided that electrodes are kept
at ambient temperature
3
10
Tj=25o C
7
rzth=RthA.Vz.
5
Vz
Tj
4
5
3
4
rzj
3
2
3
2
10
rzth
10
5
4
2
3
7
47+51
43
39
5
4
2
10
36
3
5
4
3
2
10
2
negative
2
0.1
2
3
1
4 5
2
3
10mA
4 5
positive
1
2345
1
Iz
2345
10
100V
Vz at Iz=5 mA
Temperature dependence of Zener voltage
versus Zener voltage
Dynamic resistance
versus Zener voltage
mV/K
25
100
7
5
rzj
Vz
Tj
4
3
20
5mA
Iz=1mA
20mA
15
2
10
10
7
5
5
4
3
0
2
1
Tj=25o C
Iz=5 mA
1
2
3
4 5
10
2
3
4 5
100V
Vz at Iz=5 mA
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-5
1
23 45
10
23 45
100V
Vz at Iz=5 mA
PAGE 4
BZV55C1V0 THRU BZV55C75
Temperature dependence of Zener voltage
versus Zener voltage
Change of Zener voltage
versus junction temperature
V
mV/K
9
100
Iz=5 mA
8
80
Vz bei Iz=5mA
7
Vz
Tj
Vz
60
51V
6
43V
5
36V
4
40
3
2
1
20
0
Iz=5 mA
-1
0
0
20
40
60
80
100V
0
20
40
60
o
80 100 120 140 C
Vz at Iz=5 mA
Tj
Change of Zener voltge from turn-on
up to the point of thermal equilibrium
versus Zener voltage
Change of Zener voltage
versus junction temperature
V
0.8
X)
25
Vz=35 V
0.7
V
1.6
15
1.4
10
0.6
Vz=rzth.Iz
Iz=5 mA
1.2
Vz
Vz
0.5
1
8
0.4
7
0.3
6.2
0.2
5.9
0.1
5.6
0
5.1
-0.1
X) at Iz=5 mA
-0.2
0
20
40
60
1
3.6
4.7
o
80 100 120 140 C
0.8
0.6
0.4
0.2
0
-0.2
-0.4
1
2
3
4 5
10
2
3
4 5
100V
Tj
Vz at Iz=5 mA
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PAGE 5
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