BC546A/B/C - BC550A/B/C
Taiwan Semiconductor
500mW, NPN Small Signal Transistor
FEATURES
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KEY PARAMETERS
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
RoHS Compliant
PARAMETER
VALUE
UNIT
VCBO
30 - 80
V
VCEO
30 - 65
V
VEBO
6
V
IC
100
mA
hFE
220 - 800
APPLICATIONS
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Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
Package
TO-92
Configuration
Single Die
MECHANICAL DATA
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Case: TO-92
Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Weight: 190mg (approximately)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Marking code on the device
SYMBOL
(1)
VALUE
UNIT
BC5xA/B/C
Power dissipation
PD
500
mW
Junction temperature
TJ
-65 to +150
°C
Storage temperature
TSTG
-65 to +150
°C
Notes:
1. "x" is device code from "46" to "50", "MARKING" should follow the "PART NO."
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Version:D2112
BC546A/B/C - BC550A/B/C
Taiwan Semiconductor
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
80
UNIT
50
V
BC548,BC549
30
V
BC546
65
V
45
V
BC548,BC549
30
V
BC546
6
V
6
V
6
V
BC546
Collector-base voltage, emitter open
Collector-emitter voltage, base open
Emitter-base voltage, collector open
BC547,BC550
VCBO
BC547,BC550
VCEO
BC547,BC550
VEBO
BC548,BC549
V
Collector current
IC
100
mA
Peak collector current
ICM
200
mA
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Collector cutoff
current, emitter open
Emitter cutoff current,
collector open
Collector-base voltage,
emitter open
Collector-emitter
voltage, base open
Emitter-base voltage,
collector open
DC current gain
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
VCB = 30V
ICBO
-
-
15
nA
VEB = 5V
IEBO
-
-
100
nA
80
-
-
50
30
65
45
30
6
6
6
110
200
-
220
450
V
V
V
V
V
V
V
V
V
420
-
800
BC546
IC = 100µA
IC = 10mA
IE = 100µA
VCE = 5V,
VCBO
BC547,BC550
BC548,BC549
BC546
BC547,BC550
BC548,BC549
BC546
BC547,BC550
BC548,BC549
VCEO
VEBO
Current gain group :A
B
IC = 2mA
C
hFE
ORDERING INFORMATION
ORDERING CODE(1)(2)
PACKAGE
PACKING
BC5xA/B/C A1G
TO-92
4,000 / Ammo Box
BC5xA/B/C B1G
TO-92
5,000 / Bulk
BC5xA/B/C A1
TO-92
4,000 / Ammo Box
BC5xA/B/C B1
TO-92
5,000 / Bulk
Notes:
1. "x" is device code from "46" to "50"
2. “G” is means green compound (halogen free)
2
Version:D2112
BC546A/B/C - BC550A/B/C
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Static Characteristic
Fig.2 Transfer Characteristic
100
100
IB = 350μA
80
Ic(mA), Collector Current
IC[mA], Collector Current
IB = 400μA
IB = 300μA
IB = 250μA
60
IB = 200μA
IB = 150μA
40
IB = 100μA
20
VCE=5V
10
1
IB = 50μA
0
0
0
4
8
12
16
0.4
20
0.6
VCE(V), Collector Emitter Voltage
0.8
1.0
VBE(V), Base Emitter Voltage
Fig.3 DC Current Gain
Fig.4 Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
10000
10
UF1DLW
1
100
TJ=125°C
0.1
TJ=25°C
0.01
10
0.001
1
Pulse width
0.3
0.4
10
100
0.5
0.6
0.7
0.8
Ic(mA), Collector Current
0.9
1
1000
1.2
3
VBE(sat)
TJ=125°C
TJ=25°
C
0.1
100
0.01
VCE(sat)
Pulse width
0.001
10
1000
1.1
UF1DL
W
1
(A)
VCE=5V
IC=10IB
(A)
hFE, DC Current Gain
10
VBE(sat), VCE(sat), Saturation Voltage
1000
0.3
1
0.4
0.5
0.6
10
0.7
0.8
0.9
1
100
1.1
1.2
1000
Ic(mA), Collector Current
Version:D2112
BC546A/B/C - BC550A/B/C
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
TO-92 Bulk
DIM.
A
B
C
D
E
F
G
H
I
Unit(mm)
Min
Max
4.40
5.10
4.30
4.70
12.50
14.50
1.17
1.37
0.35
0.55
1.17
1.37
0.59
1.40
0.29
0.51
3.30
4.10
Unit(inch)
Min
Max
0.173
0.201
0.169
0.185
0.492
0.046
0.054
0.014
0.022
0.046
0.054
0.023
0.055
0.011
0.020
0.130
0.161
TO-92 Ammo
DIM.
A
B
C
D
E
G
H
I
4
Unit(mm)
Min
Max
4.30
4.70
4.30
4.70
12.50
2.20
2.80
0.35
0.55
1.00
1.20
0.29
0.51
3.30
3.70
Unit(inch)
Min
Max
0.169
0.185
0.169
0.185
0.492
0.087
0.110
0.014
0.022
0.039
0.047
0.011
0.020
0.130
0.146
Version:D2112
BC546A/B/C - BC550A/B/C
Taiwan Semiconductor
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Version:D2112