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DB107S

DB107S

  • 厂商:

    YFSEMI(江苏佑风微)

  • 封装:

    SMD

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
DB107S 数据手册
DB102S THRU DB107S DB-S 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current – 1.0A FEATURES  High current capability  Low forward voltage drop  Glass Passivated Chip Junction  Low power loss, high efficiency  Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA  Case: DB-S  Terminals: Solderable per MIL- STD - 202, Method 208 1.Input pin(-) 2.Input pin(+) 3.Output Anode(~) 4.Output Cathode(~)  Approx. Weight: 0.4g / 0.02oz DB-S Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbols DB102S DB103S DB104S DB105S DB106S DB107S Units Maximum Repetitive Peak Reverse Voltage VRRM 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 100 200 400 600 800 1000 V Average Rectified Output Current I(AV) 1 Peak Forward Surge Current 8.3 ms Single Half Sine-Wave Superimposed on Rated Load(JEDEC method) IFSM 50 A Forward Voltage per element @IF =1.0A and 25°C VF 1.1 V Maximum DC Reverse Current at Rated DC Blocking Voltage @TA=25°C A 5 μA IR @TA=125°C 500 Typical Junction Capacitance(Note1) Cj 25 pF Typical Thermal Resistance (Note2) RθJA/ RθJC 40/15 °C/W Tj, Tstg -55 ~ +150 °C Operating and Storage Temperature Range (1)Measured at 1 MHz and applied reverse voltage of 4 V D.C (2)Mounted on glass epoxy PCB board with 4×1.5"×1.5"(3.81×3.81 cm) copper pad. www.yfwdiode.com 1/3 Dongguan YFW Electronics Co, Ltd. DB102S THRU DB107S DB-S Fig.2 Typical Reverse Characteristics Instaneous Reverse Current(μ A) Average Rectified Output Current (A) Fig.1 Average Rectified Output Current Derating Curve 1.2 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 100 T J =125°C 10 1.0 T J =25°C 0.1 00 T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 10 20 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) 100 T J =25°C 10 1 0.5 1.0 1.5 2.0 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles www.yfwdiode.com 2/3 Dongguan YFW Electronics Co, Ltd. DB102S THRU DB107S DB-S Package Outline DB-S Plastic surface mounted package; 4 leads Summary of Packing Options Package Packing Description Packing Quantity Industry Standard DB-S Tape/Reel,13”reel 1500 EIA-481-1 www.yfwdiode.com 3/3 Dongguan YFW Electronics Co, Ltd.
DB107S
PDF文档包含了以下内容:

物料型号:DB102S 至 DB107S 器件简介:1.0A表面贴装玻璃钝化桥式整流器,反向电压100至1000V,正向电流1.0A 特点:高电流能力、低正向电压降、玻璃钝化芯片结、低功耗高效率、符合欧盟RoHS 2011/65/EU指令的无铅 机械数据:DB-S封装、可焊端子、重量约0.4g 引脚分配:1.输入端(-),2.输入端(+),3.输出阳极(~),4.输出阴极(~) 参数特性:最大重复峰值反向电压、最大RMS电压、最大直流阻断电压、平均整流输出电流、单半正弦波峰值正向浪涌电流、正向电压、最大直流反向电流、典型结电容、典型热阻 功能详解:图表显示了峰值正向浪涌电流、典型反向特性、典型结电容、平均整流输出电流降额曲线、典型瞬态正向特性 应用信息:无具体应用信息,但根据器件特性适用于需要高电流和高效率的整流应用 封装信息:DB-S封装,带引线塑料表面贴装封装,卷带包装,13英寸卷,包装描述符合EIA-481-1工业标准
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