PESDR0521P1

UMW R PESDR0521P1 Description The PESDR0521P1 is a bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. The PESDR0521P1 has an ultra-low capacitance with a typical value at 0.3pF, and complies with the IEC 61000-4-2 (ESD) with ±25kV air and ±22kV contact discharge. It is assembled into an ultra-small 1.0x0.6x0.5mm lead-free DFN package. The small size, ultra-low capacitance and high ESD surge protection make PESDR0521P1 an ideal choice to protect cell phone, digital video interfaces and other high speed ports. Mechanical Characteristics ■ ■ ■ ■ ■ Features ■ ■ ■ ■ ■ ■ ■ ■ Package: DFN1006-2 (1.0×0.6×0.5mm) Case Material: “Green” Molding Compound. Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Below Applications Ultra small package: 1.0x0.6x0.5mm Ultra low capacitance: 0.3pF typical Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage 2-pin leadless package Complies with following standards: –IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±22kV –IEC61000-4-5 (Lightning) 4A (8/20μs) RoHS Compliant ■ ■ ■ ■ ■ ■ Cellular Handsets and Accessories Display Ports MDDI Ports USB Ports Digital Video Interface (DVI) PCI Express and Serial SATA Ports Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20μs) PPK 100 W Peak Pulse Current (8/20μs) IPP 4 A ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range www.umw-ic.com ±25 VESD ±22 kV TJ −55 to +125 °C Tstg −55 to +150 °C 1 友台半导体有限公司 UMW R PESDR0521P1 Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Symbol Reverse Working Voltage VRWM Breakdown Voltage VBR Min Typ Max Unit 5 V 9.5 V IT = 1mA 6.5 Test Condition Reverse Leakage Current IR 0.2 μA VRWM = 5V Clamping Voltage VC 12 V IPP = 1A (8 x 20μs pulse) Clamping Voltage VC 25 V IPP = 4A (8 x 20μs pulse) Junction Capacitance CJ 0.5 pF VR = 0V, f = 1MHz 0.3 Typical Performance Characteristics (TA=25°C unless otherwise Specified) 10 0.5 Peak Power_Ppp(kW) Junction Capacitance_Cj(pF) 0.6 0.4 0.3 0.2 1 0.1 0.1 0 0.01 0 1 2 3 4 5 0 1 10 Reverse Voltage_VR (V) Pulse Duration_tp(uS) Junction Capacitance vs. Reverse Voltage Peak Pulse Power vs. Pulse Time www.umw-ic.com 2 100 友台半导体有限公司 UMW R PESDR0521P1 120 24 100 20 % of Rated Power Clamping Voltage_Vc (V) 26 16 12 8 4 0 80 60 40 20 0 0 1 2 3 4 5 0 Peak Pulse Current_Ipp (A) 25 50 Ambient Clamping Voltage vs. Peak Pulse Current 75 100 125 150 Temperature_Ta(℃) Power Derating Curve 110 % of Peak Pulse Current 100 90 80 70 60 50 40 30 20 10 0 0 www.umw-ic.com 10 20 30 CH1 5.0V M 10.0ns Time_t(μS) ESD Clamping Voltage 8 X 20uS Pulse Waveform 8 kV Contact per IEC61000−4−2 3 友台半导体有限公司 UMW R PESDR0521P1 DFN1006-2 Package Outline Drawing D e h 2 1 L2 A1 C A BOTTOM VIEW L1 1 b E h L1 SYMB OL A A1 b C D e E L L1 h MILIMETER MIN NOM MAX 0.45 0.50 0.55 0 0.02 0.05 0.45 0.50 0.55 0.12 0.15 0.18 0.95 1.00 1.05 0.65BSC 0.55 0.60 0.65 0.20 0.25 0.30 0.05REF 0.07 0.12 0.17 Marking 21 Ordering information Order code Package Baseqt UMW PESDR0521P1 DFN1006-2 10000 www.umw-ic.com 4 Deliverymode Tape and reel 友台半导体有限公司