NSI8266
High Reliability Reinforced Six-Channel
Digital Isolators for IPM
Datasheet (EN) 1.1
Product Overview
Safety Regulatory Approvals
NSi8266 is a high reliability six-channel digital isolator, The
NSi8266 device is safety certified by UL1577 support
several insulations withstand voltage(3kV,5kV), while
providing high electromagnetic immunity and low
emissions at low power consumption. The data rate of
NSi8266 is up to 150Mbps, and the common-mode
transient immunity (CMTI) is up to 200kV/us. NSi8266’s
default output is low when input power is lost to prevent
IPM switching during power on stage. Wide supply voltage
of NSi8266 supports to connect with most digital interface
directly. High system level EMC performance enhance
reliability and stability of use.
NSi8266 has the interlock function for adjacent channels to
provide the shoot-through protection, to eliminate the
short-circuit risk of IGBT inside the IPM, to enhance system
robust.
UL recognition: up to 5000Vrms for 1 minute per UL1577
Key Features
CQC certification per GB4943.1-2011
CSA component notice 5A approval IEC60950-1 standard
DIN VDE V 0884-11:2017-01
Applications
Industrial automation system
Isolated SPI, RS232, RS485
General-purpose multichannel isolation
Motor Control
Device Information
Part Number
NSI8266W0-DSWR
Package
SOP16(300mil)
Body Size
10.30mm × 7.50mm
NSI8266S0-DSSR
SSOP16
4.90mm × 3.90mm
Up to 5000Vrms Insulation voltage
Date rate: DC to 150Mbps
Power supply voltage: 2.5V to 5.5V
High CMTI: 200kV/us
Functional Block Diagrams
VDD 1
1
16
VDD 2
AH_IN
2
15
AH_OUT
AL_IN
3
14
AL_OUT
BH_IN
4
13
BH_OUT
BL_IN
5
12
BL_OUT
Low power consumption: 1.5mA/ch (1 Mbps)
CH_IN
6
11
CH_OUT
Low propagation delay: 60 years
RoHS-compliant packages:
SOP16(300mil)
NSi8266
Figure 1. NSi8266 Block Diagram
SSOP16
Copyright © 2019, NOVOSENSE
Page 1
NSi8266
Datasheet (EN) 0.1
INDEX
1. PIN CONFIGURATION AND FUNCTIONS ............................................................................................................................... 3
2. ABSOLUTE MAXIMUM RATINGS .......................................................................................................................................... 4
3. RECOMMENDED OPERATING CONDITIONS ......................................................................................................................... 4
4. THERMAL INFORMATION .................................................................................................................................................... 5
5. SPECIFICATIONS .................................................................................................................................................................. 5
5.1. ELECTRICAL CHARACTERISTICS .............................................................................................................................................. 5
5.2. SUPPLY CURRENT CHARACTERISTICS – 5V SUPPLY ..................................................................................................................... 5
5.3. SUPPLY CURRENT CHARACTERISTICS –3.3V SUPPLY................................................................................................................... 6
5.4. SUPPLY CURRENT CHARACTERISTICS–2.5V SUPPLY ................................................................................................................... 6
5.5. SWITCHING CHARACTERISTICS - 5V SUPPLY ............................................................................................................................. 8
5.6. SWITCHING CHARACTERISTICS - 3.3V SUPPLY .......................................................................................................................... 8
5.7. SWITCHING CHARACTERISTICS - 2.5V SUPPLY .......................................................................................................................... 9
5.8. TYPICAL PERFORMANCE CHARACTERISTICS ............................................................................................................................ 10
5.9. PARAMETER MEASUREMENT INFORMATION .......................................................................................................................... 10
6. HIGH VOLTAGE FEATURE DESCRIPTION ............................................................................................................................. 11
6.1. INSULATION AND SAFETY RELATED SPECIFICATIONS ................................................................................................................. 11
6.2. SAFETY-LIMITING VALUES ................................................................................................................................................. 12
6.3. REGULATORY INFORMATION............................................................................................................................................... 13
7. FUNCTION DESCRIPTION ................................................................................................................................................... 15
7.1. OVERVIEW..................................................................................................................................................................... 15
7.2. OOK MODULATION ......................................................................................................................................................... 15
7.3. SHOOT THROUGH PROTECTION .......................................................................................................................................... 16
8. APPLICATION NOTE ........................................................................................................................................................... 17
8.1. TYPICAL APPLICATION CIRCUIT ........................................................................................................................................... 17
8.2. PCB LAYOUT .................................................................................................................................................................. 17
8.3. HIGH SPEED PERFORMANCE .............................................................................................................................................. 18
8.4. TYPICAL SUPPLY CURRENT EQUATIONS ................................................................................................................................. 18
9. PACKAGE INFORMATION ................................................................................................................................................... 19
10. ORDERING INFORMATION .............................................................................................................................................. 20
11. DOCUMENTATION SUPPORT ........................................................................................................................................... 21
12. TAPE AND REEL INFORMATION ....................................................................................................................................... 22
13. REVISION HISTORY .......................................................................................................................................................... 24
Copyright © 2019, NOVOSENSE
Page 2
NSi8266
Datasheet (EN) 1.1
1. Pin Configuration and Functions
VDD 1
1
16
VDD 2
AH_IN
2
15
AH_OUT
AL_IN
3
14
AL_OUT
BH_IN
4
13
BH_OUT
BL_IN
5
12
BL_OUT
CH_IN
6
11
CH_OUT
CL_IN
7
10
CL_OUT
GND 1
8
9
GND 2
NSi8266
Figure 1.1 NSi8266 Package
Table 1.1 NSi8266 Pin Configuration and Description
NSi8266 PIN
NO.
SYMBOL
FUNCTION
1
VDD1
Power Supply for Isolator Side 1
2
AH_IN
High side Logic Input AH
3
AL_IN
Low side Logic Input AL
4
BH_IN
High side Logic Input BH
5
BL_IN
Low side Logic Input BL
6
CH_IN
High side Logic Input CH
7
CL_IN
Low side Logic Input CL
8
GND1
Ground 1, the ground reference for Isolator Side 1
9
GND2
Ground 2, the ground reference for Isolator Side 2
10
CL_OUT
Low side Logic Output CL
11
CH_OUT
High side Logic Output CH
12
BL_OUT
Low side Logic Output BL
13
BH_OUT
High side Logic Output BH
14
AL_OUT
Low side Logic Output AL
15
AH_OUT
High side Logic Output AH
16
VDD2
Power Supply for Isolator Side 2
Copyright © 2019, NOVOSENSE
Page 3
NSi8266
Datasheet (EN) 1.1
2. Absolute Maximum Ratings
Parameters
Power Supply Voltage
Maximum Input Voltage
Maximum Output Voltage
Maximum Input/Output Pulse
Voltage
Output current
Symbol
Min
Typ
Max
Unit
VDD1, VDD2
-0.5
6.5
V
VINA, VINB, VINC,
VIND, VINE, VINF
-0.4
VDD+0.4
V
The maximum voltage
must not exceed 6.5V
VOUTA, VOUTB,
VOUTC, VOUTD,
VOUTE, VOUTF
-0.4
VDD+0.4
V
The maximum voltage
must not exceed 6.5V
ALL I/O Pin
-0.8
VDD+0.8
V
Pulse width should be
less than 100ns, and
the duty cycle should
be less than 10%
Io
-15
15
mA
6.25
kV
Maximum Surge Isolation
Voltage
VIOSM
Operating Temperature
Topr
-40
125
℃
Storage Temperature
Tstg
-40
150
℃
HBM
±6000
V
CDM
±2000
V
Comments
Electrostatic discharge
3. Recommended Operating Conditions
Parameters
Symbol
Min
VDD1, VDD2
2.5
High-level Input Voltage
VIH
2
Low-level Input Voltage
VIL
Data Rate
DR
Ambient Temperature
Ta
Power Supply Voltage
Copyright © 2019, NOVOSENSE
Typ
Max
5.5
Unit
Comments
V
V
0.8
V
0
150
Mbps
-40
125
℃
Page 4
NSi8266
Datasheet (EN) 1.1
4. Thermal Information
Parameters
Symbol
SOP16(300mil)
SSOP16
Unit
Junction-to-ambient thermal resistance
θJA
60.3
86.5
°C/W
Junction-to-case(top) thermal resistance
θJC(top)
24.0
26.9
°C/W
θJB
29.3
36.6
°C/W
Junction-to-board thermal resistance
5. Specifications
5.1. Electrical Characteristics
Parameters
Symbol
Power on Reset
VDDPOR
Input Threshold
Min
Typ
Unit
Comments
2.2
V
POR threshold as during powerup
VDD HYS
0.1
V
POR threshold Hysteresis
VIT
1.6
V
Input Threshold at rising edge
VIT_HYS
0.4
V
Input Threshold Hysteresis
High Level Input Voltage
VIH
Low Level Input Voltage
VIL
High Level Output Voltage
VOH
Low Level Output Voltage
VOL
Output Impedance
Rout
50
Input Pull high or low Current
Ipull
8
Start Up Time after POR
trbs
10
Common Mode Transient
Immunity
CMTI
Max
2
V
0.8
VDD0.4
0.4
±200
V
V
IOH =- 4mA
V
IOL = 4mA
ohm
15
µA
µs
±250
kV/µs
5.2. Supply Current Characteristics – 5V Supply
(VDD1=5V± 10%, VDD2=5V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃)
Parameters
Symbol
Min
Typ
Max
Unit
Comments
1.39
3.09
mA
All Input 0V
NSi8266
Supply current
IDD1(Q0)
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Page 5
NSi8266
Parameters
Datasheet (EN) 1.1
Symbol
Min
Typ
Max
Unit
Comments
IDD2(Q0)
3.41
5.63
mA
IDD1(Q1)
7.37
12.16
mA
IDD2(Q1)
3.49
5.76
mA
IDD1(16k)
4.39
7.24
mA
All Input with 16kbps,
IDD2(16k)
3.67
6.06
mA
CL=15pF
IDD1(1M)
1.39
3.09
mA
All Input with 1Mbps,
IDD2(1M)
3.41
5.63
mA
CL=15pF
All Input at supply
5.3. Supply Current Characteristics –3.3V Supply
(VDD1=3.3V± 10%, VDD2=3.3V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 3.3V, VDD2 = 3.3V, Ta =
25℃)
Parameters
Symbol
Min
Typ
Max
Unit
Comments
IDD1(Q0)
1.33
3.00
mA
All Input 0V
IDD2(Q0)
3.36
5.54
mA
IDD1(Q1)
7.26
11.98
mA
IDD2(Q1)
3.43
5.66
mA
IDD1(16k)
4.31
7.11
mA
All Input with 16kbps,
IDD2(16k)
3.55
5.86
mA
CL=15pF
IDD1(1M)
1.33
3.00
mA
All Input with 1Mbps,
IDD2(1M)
3.36
5.54
mA
CL=15pF
NSi8266
Supply current
All Input at supply
5.4. Supply Current Characteristics–2.5V Supply
(VDD1=2.5V± 10%, VDD2=2.5V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 2.5V, VDD2 = 2.5V, Ta =
25℃)
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NSi8266
Parameters
Datasheet (EN) 1.1
Symbol
Min
Typ
Max
Unit
Comments
IDD1(Q0)
1.29
2.94
mA
All Input 0V
IDD2(Q0)
3.33
5.49
mA
IDD1(Q1)
7
11.55
mA
IDD2(Q1)
3.39
5.59
mA
IDD1(16k)
4.17
6.88
mA
All Input with 16kbps,
IDD2(16k)
3.47
5.73
mA
CL=15pF
IDD1(1M)
1.29
2.94
mA
All Input with 1Mbps,
IDD2(1M)
3.33
5.49
mA
CL=15pF
NSi8266
Supply current
Copyright © 2019, NOVOSENSE
All Input at supply
Page 7
NSi8266
Datasheet (EN) 1.1
5.5. Switching Characteristics - 5V Supply
(VDD1=5V± 10%, VDD2=5V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 5V, Ta = 25℃)
Parameters
Symbol
Min
Data Rate
DR
0
Minimum Pulse Width
PW
Propagation Delay
t PLH
2.5
t PHL
2.5
Max
Unit
150
Mbps
5.0
ns
6.54
15
ns
See Figure 5.5 , CL = 15pF
8.30
15
ns
See Figure 5.5 , CL = 15pF
PWD
5.0
ns
See Figure 5.5 , CL = 15pF
Rising Time
tr
5.0
ns
See Figure 5.5 , CL = 15pF
Falling Time
tf
5.0
ns
See Figure 5.5 , CL = 15pF
Pulse Width Distortion
Typ
Comments
|t PHL – t PLH |
Peak Eye Diagram Jitter
tJIT(PK)
350
ps
Channel-to-Channel Delay
Skew
tSK(c2c)
2.5
ns
Part-to-Part Delay Skew
tSK(p2p)
5.0
ns
5.6. Switching Characteristics - 3.3V Supply
(VDD1=3.3V± 10%, VDD2=3.3V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 3.3V, VDD2 = 3.3V, Ta =
25℃)
Parameters
Symbol
Min
Data Rate
DR
0
Minimum Pulse Width
PW
Propagation Delay
t PLH
2.5
t PHL
2.5
Max
Unit
150
Mbps
5.0
ns
8.0
15
ns
See Figure 5.5 , CL = 15pF
8.7
15
ns
See Figure 5.5 , CL = 15pF
PWD
5.0
ns
See Figure 5.5 , CL = 15pF
Rising Time
tr
5.0
ns
See Figure 5.5 , CL = 15pF
Falling Time
tf
5.0
ns
See Figure 5.5 , CL = 15pF
Pulse Width Distortion
Typ
Comments
|t PHL – t PLH |
Peak Eye Diagram Jitter
tJIT(PK)
Channel-to-Channel Delay
Skew
tSK(c2c)
Copyright © 2019, NOVOSENSE
350
ps
2.5
ns
Page 8
NSi8266
Datasheet (EN) 1.1
Parameters
Symbol
Part-to-Part Delay Skew
tSK(p2p)
Min
Typ
Max
Unit
5.0
ns
Comments
5.7. Switching Characteristics - 2.5V Supply
(VDD1=2.5V± 10%, VDD2=2.5V± 10%, Ta=-40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 2.5V, VDD2 = 2.5V, Ta =
25℃)
Parameters
Symbol
Min
Data Rate
DR
0
Minimum Pulse Width
PW
Propagation Delay
t PLH
2.5
t PHL
2.5
Max
Unit
150
Mbps
5.0
ns
9.0
15
ns
See Figure 5.5 , CL = 15pF
9.3
15
ns
See Figure 5.5 , CL = 15pF
PWD
5.0
ns
See Figure 5.5 , CL = 15pF
Rising Time
tr
5.0
ns
See Figure 5.5 , CL = 15pF
Falling Time
tf
5.0
ns
See Figure 5.5 , CL = 15pF
Pulse Width Distortion
Typ
Comments
|t PHL – t PLH |
Peak Eye Diagram Jitter
tJIT(PK)
Channel-to-Channel Delay
Skew
tSK(c2c)
2.5
ns
Part-to-Part Delay Skew
tSK(p2p)
5.0
ns
Copyright © 2019, NOVOSENSE
350
ps
Page 9
NSi8266
Datasheet (EN) 1.1
5.8. Typical Performance Characteristics
IDD1
IDD2
3.8
Supply Current(mA)
Supply Current(mA)
6
3.6
4
5
3.3
2.5
2
0
0
500
1000
3.4
5
3.3
2.5
3.2
3
0
1500
500
Data Rate (bps)
1500
Data Rate(bps)
Figure 5.1 NSi8266 VDD1 Supply Current vs Data Rate
Figure 5.2 NSi8266 VDD2 Supply Current vs Data Rate
12
10
Prooagation Delay(ns)
Prooagation Delay(ns)
1000
10
8
6
4
2.5
3.3
5
2
0
-40
10
60
110
6
4
2.5
3.3
5
2
0
160
Temperature(°C)
8
-40
10
60
110
160
Temperature(°C)
Figure 5.3 Rising Edge Propagation Delay Vs Temp
Figure 5.4 Falling Edge Propagation Delay Vs Temp
5.9. Parameter Measurement Information
Input Generator
VI
50Ω
VO
CL
Figure 5.5 Switching Characteristics Test Circuit and Waveform
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Page 10
NSi8266
Datasheet (EN) 1.1
VDD1
VDD2
IN
OUT
VO
Battery
DC
CL
GND2
GND1
VCM
Figure 5.6 Common-Mode Transient Immunity Test Circuit
6. High Voltage Feature Description
6.1. Insulation and Safety Related Specifications
Description
Test Condition
Symbol
Value
SSOP16
Unit
SOP16
(300mil)
Min. External Air Gap (Clearance)
CLR
3.9
8
mm
Min. External Tracking (Creepage)
CPG
3.9
8
mm
Distance through the Insulation
DTI
32
CTI
>600
Comparative Tracking Index
DIN EN 60112 (VDE 0303-11)
Material Group
IEC 60112
um
V
I
Installation Classification per DIN VDE 0110
For Rated Mains Voltage ≤ 150Vrms
I to III
I to IV
For Rated Mains Voltage ≤ 300Vrms
I to II
I to IV
For Rated Mains Voltage ≤ 600Vrms
I
I to IV
For Rated Mains Voltage ≤ 1000Vrms
/
I to III
Insulation Specification per DIN VDE V 0884-11:2017-011)
Climatic Category
40/125/21
Pollution Degree
per DIN VDE 0110, Table 1
Maximum Working Isolation Voltage
AC voltage
2
VIOWM
400
1500
VRMS
565
2121
VDC
VIORM
565
2121
Vpeak
Vpd (m)
847
/
Vpeak
DC voltage
Maximum
Voltage
Repetitive
Isolation
Vini. b = VIOTM, Vpd(m) = VIORM × 1.5,
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Page 11
NSi8266
Datasheet (EN) 1.1
Description
Input to Output Test Voltage, Method
B1
Test Condition
Symbol
Value
Unit
tini = tm = 1 sec, qpd ≤ 5 pC,
100% production test
Vini. b = VIOTM, Vpd(m) = VIORM × 1.875,
Vpd (m)
/
3977
Vpeak
V pd (m)
678
/
Vpeak
V pd (m)
/
3394
Vpeak
V pd (m)
678
2545
Vpeak
tini = tm =1 sec, qpd≤ 5 pC,
100% production test
Input to Output Test Voltage, Method
A. After Environmental
Tests
Subgroup 1
Vini. a = VIOTM, Vpd(m) = VIORM × 1.3,
tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC
Vini. a = VIOTM, Vpd(m) = VIORM × 1.6,
tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC
Input to Output Test Voltage, Method
A. After Input and Output Safety Test
Subgroup 2 and Subgroup 3
Vini. a = VIOTM, Vpd(m) = VIORM × 1.2,
Maximum Transient Isolation Voltage
t = 60 sec
VIOTM
3000
8000
Vpeak
Maximum Surge Isolation Voltage
Test method per IEC62368-1,
VIOSM
4500
/
Vpeak
/
6250
Vpeak
tini = 60 sec, tm = 10 sec, qpd ≤ 5 pC
1.2/50us waveform, VTEST = 1.3 ×
VIOSM
Test method per IEC62368-1,
1.2/50us waveform, VTEST = 1.6 ×
VIOSM
Isolation Resistance
VIO = 500 V, Tamb = TS
RIO
VIO = 500 V, 100 °C ≤ Tamb ≤ 125 °C
Isolation Capacitance
f = 1MHz
CIO
VTEST = 1.2 × VISO, t = 1 sec,
VISO
>109
Ω
>1011
Ω
1.2
pF
Insulation Specification per UL1577
Withstand Isolation Voltage
3000
5000
Vrms
100% production test
6.2. Safety-Limiting Values
Reinforced isolation safety-limiting values as outlined in VDE-0884-11 of NSI8266-DSWR
Description
Test Condition
Value
Unit
Safety Supply Power
RθJA = 60.3 °C/W, TJ = 150 °C, TA = 25 °C
2073
mW
Safety Supply Current
RθJA = 60.3 °C/ W, VI = 5V, TJ = 150 °C, TA = 25 °C
414
mA
150
°C
Safety Temperature2)
1)
Calculate with the junction-to-air thermal resistance, RθJA, of SOP16(300mil) package (Thermal Information Table) which is that of
a device installed on a low effective thermal conductivity test board (1s) according to JESD51-3.
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Page 12
NSi8266
The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device.
Safety Limiting Power (mW)
2)
Datasheet (EN) 1.1
450
400
350
300
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature (°C)
Figure 6.1 NSI826x-DSWR Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11
Basic isolation safety-limiting values as outlined in VDE-0884-11 of NSI8266-DSSR
Description
Test Condition
Value
Unit
Safety Supply Power
RθJA =86.5 °C/W, TJ = 150 °C, TA = 25 °C
1445
mW
Safety Supply Current
RθJA = 86.5 °C/ W, VI = 5V, TJ = 150 °C, TA = 25 °C
289
mA
150
°C
Safety Temperature2)
Calculate with the junction-to-air thermal resistance, RθJA, of SSOP16 package (Thermal Information Table) which is that of a
device installed on a low effective thermal conductivity test board (1s) according to JESD51-3.
4)
The maximum safety temperature has the same value as the maximum junction temperature (TJ) specified for the device.
Safety Limiting Power (mW)
3)
350
300
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature (°C)
Figure 6.1 NSI8266-DSSRThermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11
6.3. Regulatory Information
The NSi8266W0-DSWR are approved or pending approval by the organizations listed in table.
CUL
Copyright © 2019, NOVOSENSE
VDE
CQC
Page 13
NSi8266
Datasheet (EN) 1.1
UL 1577 Component Recognition
Program1
Approved under CSA
Component Acceptance Notice
5A
Single Protection, 5000Vrms Isolation
voltage
File (pending)
Single Protection, 5000Vrms
Isolation voltage
File (pending)
DIN VDE V 088411(VDE V 088411):2017-012
Certified by CQC11471543-2012
GB4943.1-2011
Reinforce Insulation
2121Vpeak,
VIOSM=6250Vpeak
Reinforced insulation at
1500VRMS (2121Vpeak)
File (5024579-48800002 / 276211)
File (pending)
The NSi8266S0-DSSR are approved or pending approval by the organizations listed in table.
CUL
UL 1577 Component Recognition
Program1
Single Protection, 3000Vrms Isolation
voltage
File (pending)
Copyright © 2019, NOVOSENSE
VDE
Approved under CSA
Component Acceptance Notice
5A
Single Protection, 3000Vrms
Isolation voltage
File (pending)
DIN VDE V 088411(VDE V 088411):2017-012
CQC
Certified by CQC11471543-2012
GB4943.1-2011
Basic Insulation
565Vpeak,
VIOSM=5384Vpeak
Basic insulation at
400Vrms (565Vpeak)
File (pending)
File (pending)
Page 14
NSi8266
Datasheet (EN) 1.1
7. Function Description
7.1. Overview
NSi8266 is high reliability six-channel digital isolator. NSi8266 is safety certified by UL1577 support 5kVrms insulation withstand voltages,
while providing high electromagnetic immunity and low emissions at low power consumption. The data rate is up to 150Mbps, and the
common-mode transient immunity (CMTI) is up to 200kV/us. NSi8266’s default output is low when input power is lost to prevent IPM
switching during power on stage. Wide supply voltage of NSi8266 support to connect with most digital interface directly, easy to do the
level shift. High system level EMC performance enhance reliability and stability of use.
NSi8266 has a default output status when VDDIN is unready and VDDOUT is ready as shown in Table 4.1, which helps for diagnosis when
power is missing at the transmitter side. The other outputs follow the same status with the input A after powering up respectively.
Table 7.1 Output status vs. power status
Input
ENX
VDD1
status
VDD2
status
Output
Comment
H
H or NC
Ready
Ready
H
Normal operation.
L
H or NC
Ready
Ready
L
X
L
Ready
Ready
Z
Output Disabled, the output is high impedance
X
H or NC
Unready
Ready
L
The output follows the same status with the input after
input side VDD1 is powered on.
X
L
Unready
Ready
Z
Output Disabled, the output is high impedance
X
X
Ready
Unready
X
The output follows the same status with the input after
output side VDD2 is powered on.
Note: H=Logic high; L=Logic low; X=Logic low or logic high
VDD1 is input side power;VDD2 is out side power.
7.2. OOK Modulation
NSi8266 is based on a capacitive isolation barrier technique and the digital signal is modulated with RF carrier generated by the internal
oscillator at the transmitter side, as shown in Fig7.1, then it is transferred through the capacitive isolation barrier and demodulated at
the receiver side. The modulation uses OOK modulation technique with key benefits of high noise immunity and low radiation EMI.
Isolation
barrier
VIN
PWM
TX signal
conditioning
RX signal
conditioning
envelope
detection
VOUT
EN
OSC
Figure 7.1 Single Channel Function Block Diagram
Copyright © 2019, NOVOSENSE
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NSi8266
Datasheet (EN) 1.1
TX IN
Signal through
isolation barrier
RX OUT
Figure 7.2 OOK Modulation
7.3. Shoot Through Protection
Channel 1
PWM1
AH_IN
PWM2
AL_IN
AH_OUT
L
O
G
I
C
HS
Channel 2
AL_OUT
L
O
G
I
C
LS
NSi8266W0
Figure 7.3 Typical IPM isolated driving Circuit
As shown in Fig. 7.3, NSi8266 has the interlock function to provide the shoot through protection to prevent both high-side and low-side
switches to be activated simultaneously, if one of the adjacent channels is in ON state, the counterpart PWM signal is inhibited,
preventing it to turn high. Fig. 7.4 & Fig.7.5 show the test waveform.
Figure 7.4 NSi8266 normal driving signal waveform
Copyright © 2019, NOVOSENSE
Figure 7.5 NSi8266 driving signal with interlock triggered
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NSi8266
Datasheet (EN) 1.1
8. Application Note
8.1. Typical Application Circuit
隔离电源
VIN=5V/3.3V
VOUT=5V/3.3V
VDD2
VDD1
100nF
PWM1
PWM2
PWM3
MCU
16
1
VDD 1
2
AH_IN
AH_OUT 15
3
AL_IN
AL_OUT 14
VDD 2
4
BH_IN
BH_OUT 13
5
BL_IN
BL_OUT 12
6
CH_IN
CH_OUT 11
7
CL_IN
CL_OUT 10
8
GND 1
PWM4
100nF
PWM_AH
PWM_AL
PWM_BH
PWM_BL
IPM
PWM_CH
PWM5
PWM6
GND 2
PWM_CL
9
NSi8266W0
Figure 8.1 Typical IPM isolated driving Circuit
8.2. PCB Layout
NSi8266 requires a 0.1 µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as
possible to the package. Figure 5.1 to Figure 5.2 show the recommended PCB layout, make sure the space under the chip should keep
free from planes, traces, pads and via. To enhance the robustness of a design, the user may also include resistors (50–300 Ω) in series
with the inputs and outputs if the system is excessively noisy. The series resistors also improve the system reliability such as latch-up
immunity.
The typical output impedance of an isolator driver channel is approximately 50 Ω, ±40%. When driving loads where transmission line
effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces.
Figure8.2 Recommended PCB Layout — Top Layer
Copyright © 2019, NOVOSENSE
Figure8.3 Recommended PCB Layout — Bottom Layer
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NSi8266
Datasheet (EN) 1.1
8.3. High Speed Performance
8.4. Typical Supply Current Equations
The typical supply current of NSi8266 can be calculated using below equations. IDD1 and IDD2 are typical supply currents measured in mA,
f is data rate measured in Mbps, CL is the capacitive load measured in pF
NSi8266:
IDD1 = 0.22 *a1+1.2*b1+0.7*c1.
IDD2 = 3.3+ VDD1*f* CL *c1*10-9
Where a1 is the channel number of low inputs at side 1, b1 is the channel number of high inputs at side 1, c1 is the channel number of
switch signal inputs at side 1.
Copyright © 2019, NOVOSENSE
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NSi8266
Datasheet (EN) 1.1
9. Package Information
Figure 9.1 SOP16(300mil) Package Shape and Dimension in millimeters
Copyright © 2019, NOVOSENSE
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NSi8266
Datasheet (EN) 1.1
Figure 9.2 SSOP16 Package Shape and Dimension in millimeters
10. Ordering Information
Part
Number
NSI8266W0
-DSWR
NSI8266S0DSSR
Isolation
Rating
(kV)
5
Number
of side 1
inputs
6
Number
of side 2
inputs
0
Max Data
Rate
(Mbps)
150
Default
Output
State
Low
Temperature
MSL
Package
Type
Package
Drawing
SPQ
-40 to 125℃
2
SOW16
1000
3
6
0
150
Low
-40 to 125℃
1
SOP16
(300mil)
SSOP16
SSOP16
2500
Copyright © 2019, NOVOSENSE
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NSi8266
Datasheet (EN) 1.1
Part Number Rule:
NSi(82)(6)(6)(W)(0)-DSWR
Series Number
Total Channel Amount:
N=N Channels N=1,2,4
N=0: I2C Part
Reverse Channel Amount:
N=N Channels N=0,1,2
D = Industrial
Q1 = Auto
Fail-Safe Output State:
0 = Logic Low
1 = Logic High
Package Type:
S= SSOP16
W= SOP16(300mil)
11. Documentation Support
Part Number
Product Folder
Datasheet
Technical Documents
Isolator selection guide
NSI8266
Click here
Click here
Click here
Click here
Copyright © 2019, NOVOSENSE
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NSi8266
Datasheet (EN) 1.1
12. Tape and Reel Information
Figure 12.1 Tape and Reel Information of SOP16(300mil)
Copyright © 2019, NOVOSENSE
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NSi8266
Datasheet (EN) 1.1
Figure 12.1 Tape and Reel Information of SSOP16(150mil)
Copyright © 2019, NOVOSENSE
Page 23
NSi8266
Datasheet (EN) 1.1
13. Revision History
Revision
1.0
1.1
Description
Initial version
Changed tape and reel information
Copyright © 2019, NOVOSENSE
Date
2020/11/20
2020/12/20
Page 24