WS4612
WS4612
60mΩ, Current Limited, Power Distribution Switch
Http//:www.sh-willsemi.com
Descriptions
4
5
The WS4612 is a high-side switch with ultra-low ON
4612
**YW
resistance P-MOSFET. Integrated current-limit function
can limit inrush current for heavy capacitive load, over
1
load current, and short-circuit current to protect power
source.
SOT-23-5L
The WS4612 is also integrated reverse protection
2
3
Marking
WS4612EA
WS4612E(B/C/D/E)
function to eliminate any reverse current flow across
the
switch
when
the
device
is
off.
Output
auto-discharge function makes output voltage off
quickly while the device shutdown. Thermal shutdown
function can protect the device and load.
Pin configuration (Top view)
The WS4612 is available in SOT-23-5L packages.
Standard product is Pb-free and Halogen-free.
For detail marking information, please see page 14.
Features
Order Information
Input voltage range
: 2.5-5.5V
Main switch RON
: 60mΩ@VIN=5.0V
Adj. current limit range
: 0.1A-2.5A(Typ.)
Ordering Information
Quiescent Supply Current
: 26μA
WS4612
Under Voltage Lockout
Auto discharge
Reverse block (No “body diode”)
EN Function & Discharge
Over temperature protection
A : EN high enable & Discharge
For detail order information, please see page 14.
-- 5 /TR
B : EN low enable & Discharge
C : EN high enable & no Discharge
Applications
D : EN low enable & no Discharge
USB peripherals
USB Dongle
Output Current Limit
USB 3G data card
A : Adjustable version
3.3V or 5V Power Switch
B : 1.5A
3.3V or 5V Power Distribution
C : 2.1A
D : 2.4A
E : 3A
Package Code
E : SOT-23-5L
Will Semiconductor Ltd.
1
Aug, 2020 - Rev. 1.8
WS4612
Typical Applications
WS4612EA
Pin Descriptions
WS4612EA
Pin Number
Symbol
Descriptions
1
OUT
Output Pin
2
GND
Ground
3
ISET
Current limit setting
4
EN/EN
Enable Pin must be driven logic High or Low for a clearly defined
input. Floating the input may cause unpredictable operation.
5
IN
Input Pin
WS4612E(B/C/D/E)
Pin Descriptions
WS4612E(B/C/D/E)
Pin Number
Symbol
Descriptions
1
OUT
Output Pin
2
GND
Ground
3
FLG
Fault Flag Pin, Open-Drain, Active Low
4
EN/EN
Enable Pin must be driven logic High or Low for a clearly defined input.
Floating the input may cause unpredictable operation.
5
IN
Will Semiconductor Ltd.
Input Pin
2
Aug, 2020 - Rev. 1.8
WS4612
Block Diagram( WS4612EA)
Block Diagram( WS4612E(B/C/D/E) )
Will Semiconductor Ltd.
3
Aug, 2020 - Rev. 1.8
WS4612
Absolute maximum ratings
Parameter
Symbol
Value
Unit
VIN
-0.3~6.5
V
OUT pin voltage range
VOUT
-0.3~6.5
V
ISET pin voltage range
VISET
-0.3~6.5
V
FLG pin voltage range
VFLG
-0.3~6.5
V
EN pin voltage range
VEN
-0.3~6.5
Junction temperature
TJ
-40~150
o
Lead temperature(Soldering, 10s)
TL
260
o
Tstg
-55~150
o
HBM
2000
V
CDM
2000
V
IN pin voltage range
Storage temperature
ESD Ratings
V
C
C
C
These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions
beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may
affect device reliability.
Recommend Operating Conditions
Parameter
Symbol
Value
Unit
Supply input voltage range
VIN
2.5~5.5
Operating ambient temperature
TA
-40~85
Thermal Resistance
RθJA
250
o
Thermal Resistance
RθJC
58
o
V
C
o
C/W
C/W
Surface mounted on FR-4 Board using 2 oz, 1*1 square inch Cu area. PCB board size 1.5*1.5 square
inches.
Will Semiconductor Ltd.
4
Aug, 2020 - Rev. 1.8
WS4612
Electronics Characteristics( WS4612EA )
Ta=25oC, VIN=5V, CIN=COUT=1μF, unless otherwise noted
Parameter
Symbol
Quiescent supply current
IQ
Shutdown current
ISD
Conditions
Min.
IOUT=0, VIN=5V,
Typ.
Max.
Units
50
μA
1.0
μA
1.0
μA
60
70
mΩ
50
100
Ω
26
VEN=enable
VEN=disable
VIN=0V, VEN=disable,
Reverse current
IREV
VOUT=5V, Current flow
to VIN
Main-FET ON resistance
Auto-discharge FET ON resistance
Current Limit(1)
Short-circuit output current
Short circuit current limiting
response time
RON
RDCHG
ILIM
IOS
tSHORT
VIN=5V, VEN=enable,
IOUT=500mA
VEN=disable, VIN =5V,
VOUT=2V
RSET=2.72 kΩ
2.15
2.5
2.85
A
RSET=6.8 kΩ
0.86
1.0
1.14
A
RSET=13.6 kΩ
0.40
0.50
0.60
A
RSET=68 kΩ
0.05
0.1
0.15
A
OUT shorted to
GND,Rset=6.8kΩ
OUT connected to
GND,CL=1μF
0.65
A
1.0
μs
EN input low voltage
VIL
VIN=5V
EN input high voltage
VIH
VIN=5V
OUT pin turn-on time after EN ON
tON
CL=1μF, RL=5ohm
700
μs
VIN=5.0V
7.5
ms
TSD
160
o
THYS
20
o
Under voltage lock out threshold
VUVLO
2.25
Under voltage lock out hysteresis
VUVLO-HYS
250
Fault flag output blanking time
Over-temperature shutdown
threshold
Over-temperature threshold
hysteresis
tBLANK
0.4
1.2
V
V
C
C
2.4
V
mV
(1) Pulse test, Period=10mS, Duty cycle=4%
Will Semiconductor Ltd.
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Aug, 2020 - Rev. 1.8
WS4612
Electronics Characteristics( WS4612E)
Ta=25oC, VIN=5V, CIN=COUT=1μF, unless otherwise noted
Parameter
Symbol
Quiescent supply current
IQ
Shutdown current
ISD
Conditions
Min.
IOUT=0, VIN=5V,
VEN=enable
Typ.
Max.
Units
26
50
μA
1.0
μA
1.0
μA
60
70
mΩ
VEN=disable
VIN=0V, VEN=disable,
Reverse current
IREV
VOUT=5V, Current flow to
VIN
Main-FET ON resistance
RON
Current Limit(1)
ILIM
Auto-discharge FET ON
RDCHG
resistance
Short circuit current limiting
tSHORT
response time
VIN=5V, VEN=enable,
IOUT=500mA
WS4612EB
1.2
1.5
1.6
A
WS4612EC
1.8
2.1
2.4
A
WS4612ED
2.1
2.4
2.7
A
WS4612EE
2.6
3
3.4
A
50
100
Ω
VIN =5V, VEN=disable,
VOUT=2V
OUT connected to GND,
1.0
CL=1μF
μs
EN input low voltage
VIL
VIN=5V
EN input high voltage
VIH
VIN=5V
OUT pin turn-on time after EN ON
tON
VIN=5V CL=1μF RL=5ohm
600
μs
VIN=5.0V
7.5
ms
TSD
160
oC
THYS
20
o
Under voltage lock out threshold
VUVLO
2.25
Under voltage lock out hysteresis
VUVLO-HYS
250
Fault flag output blanking time
tBLANK
Over-temperature shutdown
threshold
Over-temperature threshold
hysteresis
0.4
1.2
V
V
C
2.4
V
mV
(1) Pulse test,Period=10mS,Duty cycle=4%.
Will Semiconductor Ltd.
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Aug, 2020 - Rev. 1.8
WS4612
Typical Characteristics
(WS4612EAA, Ta=25oC, unless otherwise noted)
81
78
IOUT=0.5A
RSET=6.8K
78
75
72
72
69
69
66
RON(m)
RON(m)
75
66
63
60
63
60
57
57
54
54
51
51
48
48
2.5
3.0
3.5
4.0
4.5
5.0
VIN=5V
RSET=6.8K
IOUT=0.5A
45
-50
5.5
-25
0
25
50
0
75
100
125
Temperature( C)
Input Voltage(V)
ON Resistance vs. Input Voltage
ON Resistance vs. Temperature
Quiescent Current(uA)
35
34
33
32
31
30
29
28
VIN=5V
27
RSET=6.8K
NO LOAD
26
25
-50
-25
0
25
50
75
100
125
0
Temperature( C)
Quiescent current vs. Input Voltage
2.10
1.10
RSET=3.4K
2.08
RSET=6.8K
1.09
2.06
1.08
Current Limit(A)
Current Limit(A)
Quiescent current vs. Temperature
2.04
2.02
2.00
1.98
1.96
1.07
1.06
1.05
1.04
1.03
1.94
1.02
1.92
1.01
1.90
2.5
3.0
3.5
4.0
4.5
5.0
1.00
2.5
5.5
Input Voltage(V)
3.5
4.0
4.5
5.0
5.5
Input Voltage(V)
Current Limit vs. Input Voltage
Will Semiconductor Ltd.
3.0
Current Limit vs. Input Voltage
7
Aug, 2020 - Rev. 1.8
WS4612
0.50
0.49
1.98
1.96
0.48
Current Limit(A)
Current Limit(A)
2.00
RSET=17K
0.47
0.46
0.45
0.44
0.43
1.92
1.90
1.88
1.86
1.84
0.42
1.82
0.41
1.80
0.40
2.5
1.78
-50
3.0
3.5
4.0
4.5
5.0
5.5
1.08
Current Limit(A)
1.06
1.04
1.02
1.00
0.98
0.96
VIN=5V
RSET=6.8K
0.90
-50
-25
0
25
50
75
100
125
0
25
50
75
100
125
0.426
0.424
0.422
0.420
0.418
0.416
0.414
0.412
0.410
0.408
VIN=5V
0.406
RSET=17K
0.404
-50 -25
0
25
50
75
100
125
0
0
Temperature( C)
Temperature( C)
Current Limit vs. Temperature
Will Semiconductor Ltd.
-25
Current Limit vs. Temperature
1.10
0.92
RSET=3.4K
Temperature( C)
Current Limit vs. Input Voltage
0.94
VIN=5V
0
Input Voltage(V)
Current Limit(A)
1.94
Current Limit vs. Temperature
8
Aug, 2020 - Rev. 1.8
WS4612
85
75
80
70
75
65
RON(m)
RON(m)
Typical Characteristics ( WS4612EE, Ta=25oC, unless otherwise noted )
70
65
=1.0A
IOUT
60
55
2.5
3.0
3.5
60
55
IOUT=1.0A
50
4.0
4.5
5.0
45
-50
5.5
-25
0
25
50
75
100
125
Temperature(oC)
Input Voltage(V)
ON Resistance vs. Input Voltage
ON Resistance vs. Temperature
Current Limit vs. Input Voltage
Quiescent current vs. Temperature
FLG Delay Time(ms)
8
7
6
5
4
3
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Input Voltage(V)
FLAG delay time vs. Input Voltage
Will Semiconductor Ltd.
9
Aug, 2020 - Rev. 1.8
WS4612
Typical Characteristics
(WS4612EAA , Ta=25oC, unless otherwise noted)
Startup from Power ON
Startup from Power ON
Startup from Enable ON
Startup from Enable ON
Shutdown from Power OFF
Shutdown from Enable OFF
Current Limit Response
Will Semiconductor Ltd.
Short Circuit Response
10
Aug, 2020 - Rev. 1.8
WS4612
Typical Characteristics ( WS4612EEA), Ta=25oC, unless otherwise noted )
Startup from Power ON
Startup from Power ON
Startup from Enable ON
Startup from Enable ON
Shutdown from Power OFF
Shutdown from Enable OFF
Current Limit Response
Will Semiconductor Ltd.
Short Circuit Response
11
Aug, 2020 - Rev. 1.8
WS4612
Operation Information
Power Switch
The power switch is a P-channel MOSFET with low RDS(ON) for power management or USB power distribution
applications. The WS4612 has reverse voltage protection to prevents current flow from OUT to IN and IN to
OUT when device is off.
Current-Limit Protection( WS4612EA )
The WS4612 provide current limit protection function to protect power source when over-current condition
occurs. The current limit Ioc can be adjusted by external resistor connected between ISET pin and GND. The
Ioc typical value can be calculated using following equation:
I OC ( A)
6 .8 K
RSET
Current-Limit Protection( WS4612E(B/C/D/E) )
The WS4612 provide current limit protection function to protect power source when over-current condition
occurs. The typical current limit threshold is set internally to approximately 1.5A(WS4612EB),
2.1A(WS4612EC), 2.4A(WS4612ED), 3A(WS4612EE).
Short-Circuit Protection
The WS4612 provide short circuit protection function. The output current will be limited to safe level. The
short-circuit protection is used to reduce power dissipation of the device and protect power source during
short-circuit condition.
Fault indicate( WS4612E(B/C/D/E) )
The FLG open drain output is asserted (active low) with 7.5ms(Typ.) delay when an over-current or
over-temperature condition is encountered. The FLG signal will remain asserted until the over-current or
over-temperature condition is removed.
UVLO Protection
To avoid malfunction of the WS4612 at low input voltages, an under voltage lockout is included that disables
the device, until the input voltage exceeds 2.25V (Typ.)
Shutdown Mode
Drive EN to place the WS4612 in shutdown mode. In shutdown mode, input current falls to smaller than 1uA.
Thermal Shutdown
As soon as the junction temperature (TJ) exceeds 160oC (Typ.), the WS4612 goes into thermal shutdown. In
this mode, the device is turned off and will turn on again until Junction temperature falls below 140oC (Typ.).
Will Semiconductor Ltd.
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Aug, 2020 - Rev. 1.8
WS4612
Application Information
Input Capacitor
A 1uF input bypass ceramic capacitor(CIN) from IN to GND, located near the WS4612 is strongly
recommended to suppress the voltage overshooting during short circuit fault event. Without the bypass
capacitor, the output short may cause sufficient ringing on the input (from supply lead inductance) to damage
the device.
Output Capacitor
A low ESR, 150uF aluminum electrolytic or tantalum between OUT and GND is strongly recommended to
reduce the voltage droop during hot-plug of downstream peripheral.
Higher value output capacitor is better
when the output load is heavy. Additionally, bypassing the output with a 1uF ceramic capacitor improves the
immunity of the device to short-circuit transients.
PCB Layout consideration
The PCB layout should be carefully performed to maximize thermal dissipation and to minimize voltage drop.
The following guidelines must be considered:
1. Please place the input capacitors near the IN pin as close as possible.
2. Output decoupling capacitors for load must be placed near the load as close as possible for decoupling
high frequency ripples.
3. Locate WS4612 and output capacitors near the load to reduce parasitic resistance and inductance for
excellent load transient performance.
4. The negative pins of the input and output capacitors and the GND pin must be connected to the ground
plane of the load.
5. Keep IN and OUT traces as wide and short as possible.
Will Semiconductor Ltd.
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Aug, 2020 - Rev. 1.8
WS4612
Order Information
Continuous
Ordering No.
Current
Output
Enable
Shutdown
Package
Resistor
Operating
Temperature
Marking
Shipping
WS4612EBA-5/TR
1A
Active
High
Yes
SOT-23-5L
-40~85oC
4612
BAYW
3000/Reel&Tape
WS4612EBB-5/TR
1A
Active
Low
Yes
SOT-23-5L
-40~85oC
4612
BBYW
3000/Reel&Tape
WS4612ECA-5/TR
1.5A
Active
High
Yes
SOT-23-5L
-40~85oC
4612
CAYW
3000/Reel&Tape
WS4612ECB-5/TR
1.5A
Active
Low
Yes
SOT-23-5L
-40~85oC
4612
CBYW
3000/Reel&Tape
WS4612ECC-5/TR
1.5A
Active
High
No
SOT-23-5L
-40~85oC
4612
CCYW
3000/Reel&Tape
WS4612EDA-5/TR
2A
Active
High
Yes
SOT-23-5L
-40~85oC
4612
DAYW
3000/Reel&Tape
WS4612EDB-5/TR
2A
Active
Low
Yes
SOT-23-5L
-40~85oC
4612
DBYW
3000/Reel&Tape
WS4612EEB-5/TR
2.5A
Active
Low
Yes
SOT-23-5L
-40~85oC
4612
EBYW
3000/Reel&Tape
WS4612EEA-5/TR
2.5A
Active
High
Yes
SOT-23-5L
-40~85oC
4612
EAYW
3000/Reel&Tape
WS4612EAA-5/TR
ADJ
Active
High
Yes
SOT-23-5L
-40~85oC
4612
AAYW
3000/Reel&Tape
WS4612EAB-5/TR
ADJ
Active
Low
Yes
SOT-23-5L
-40~85oC
4612
ABYW
3000/Reel&Tape
WS4612EAC-5/TR
ADJ
Active
High
No
SOT-23-5L
-40~85oC
4612
ACYW
3000/Reel&Tape
Marking Information
4612
= Device code
**
=Special code
Y
= Year code
W
= Week code
Marking
Will Semiconductor Ltd.
14
Aug, 2020 - Rev. 1.8
WS4612
PACKAGE OUTLINE DIMENSIONS
SOT-23-5L
D
θ
b
K
L
M
E
E1
(Ⅰ )
(Ⅱ)
c
e
e1
TOP VIEW
SIDE VIEW
2.30
0.55
A
A2
A1
0.95
1.50
0.80
SIDE VIEW
Symbol
RECOMMENDED LAND PATTERN (unit: mm)
Dimensions in Millimeters
Min.
Typ.
Max.
A
-
-
1.25
A1
0.00
-
0.15
A2
1.00
1.10
1.20
b
0.30
0.40
0.50
c
0.10
-
0.21
D
2.72
2.92
3.12
E
2.60
2.80
3.00
E1
1.40
1.60
1.80
e
0.95 BSC
e1
1.90 BSC
L
0.30
0.45
0.60
M
0.10
0.15
0.25
K
0.00
-
0.25
θ
0°
-
8°
Will Semiconductor Ltd.
15
Aug, 2020 - Rev. 1.8
WS4612
TAPE AND REEL INFORMATION
Reel Dimensions
RD
Reel Dimensions
Tape Dimensions
W
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
RD
Reel Dimension
W
Overall width of the carrier tape
P1
Pitch between successive cavity centers
Pin1
Pin1 Quadrant
Will Semiconductor Ltd.
User Direction of Feed
7inch
13inch
1 8mm
12mm
16mm
2mm
4mm
8mm
Q1
Q2
Q3
16
Q4
Aug, 2020 - Rev. 1.8