AO4403-MS

www.msksemi.com AO4403-MS Semiconductor Compiance Features SOP-8 ● VDS (V) =-30V 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain ● ID =-6 A (VGS =-10V) ● RDS(ON) ＜ 48mΩ (VGS =-10V) ● RDS(ON) ＜ 57mΩ (VGS =-4.5V) ● RDS(ON) ＜ 80mΩ (VGS =-2.5V) D G S Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Avalanche Current Avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead L=0.1mH TA=25°C TA=70°C t ≤ 10s Steady-State ID -5 -30 IAS,IAR 18 EAS,EAR 16 RthJA V -6 IDM PD Unit 3.1 2 A mJ W 40 75 RthJL 24 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.msksemi.com AO4403-MS Semiconductor Compiance Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS VDS=0V, VGS=±12V VGS(th) VDS=VGS ID=-250μA Gate Threshold Voltage ID=-250μA, VGS=0V Min Typ -30 On state drain current RDS(On) VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg VGS=-10V, ID=-6A -0.5 nA -1.3 V VGS=-4.5V, ID=-4A 57 VGS=-2.5V, ID=-2A 80 VGS=-4.5V, VDS=-5V -30 VDS=-5V, ID=-6A 645 VGS=0V, VDS=-15V, f=1MHz mΩ A 19 S 780 pF 80 55 VGS=0V, VDS=0V, f=1MHz 4 12 Ω 7 Qg Qgs Gate Drain Charge Qgd 2.5 Turn-On DelayTime td(on) 6.5 Turn-On Rise Time tr Turn-Off DelayTime td(off) VGS=-4.5V, VDS=-15V, ID=-6A VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=6Ω 3.5 ns 41 tf 9 Body Diode Reverse Recovery Time trr 11 Body Diode Reverse Recovery Charge Qrr IF=-6A, dI/dt=100A/us nC 1.5 Turn-Off Fall Time 3.5 IS VSD ±100 72 TJ=125℃ Gate Source Charge Maximum Body-Diode Continuous Current uA 48 Total Gate Charge Diode Forward Voltage Unit V VGS=-10V, ID=-6A Static Drain-Source On-Resistance Max IS=-1A,VGS=0V nC -3.5 A -1 V Note : The static characteristics in Figures 1 to 6 are obtained using