HX3400A

SOT-23-3 Plastic-Encapsulate Transistors HX3400A MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING: A09T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units VDS Symbol Drain-Source voltage Parameter 20 V VGS Gate-Source voltage ±8 V ID Drain current 3.6 A PD Power Dissipation 1 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 20 Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 0.5 Gate-body Leakage IGSS VDS=0V, VGS=±10V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Drain-Source On-Resistance rDS(ON) Forward Trans conductance gfs TYP MAX UNIT V 0.75 1.2 V ±100 nA 1 uA VGS=2.5V, ID=3A 42 70 mΩ VGS=4.5V, ID=3.6A 38 52 mΩ VDS=5V, ID=3A s 9 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz 300 pF 120 80 Switching Capacitance Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=10V, ID= 3.6A, VGS=4.5V RGEN=6Ω VDS=10V, ID=3.6A, VGS=4.5V, 10 15 nS 50 80 nS 17 60 nS 10 25 nS 4.0 10 nC 0.65 nC 1.5 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD Diode Forward Current Is VGS=0V, IS= 3A 0.75 1.2 V 3.0 A 1