MBRF20200CT

MBRF20200CT Dual High Voltage Schottky Rectifier ●Features： ■Common Cathode Structure ■Low Power Loss and High Efficiency ■Low Forward Voltage Drop ■High Surge Capability ●Application: ■ High Frequency Switch ■ Free Wheeling,and Polarity Protection Applications Absolute Maximum Ratings(Tc=25C unless otherwise noted) Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 200 V VR Maximum DC Reverse Voltage IF(AV) IFSM 200 10(Per Leg) Average Rectified Forward Current, Tc=120C 20(Per Device) Peak Forward Surge Current,8.3ms Half Sine wave 150 V A A Tj Operating Junction Temperature 150 C Tstg Storage Temperature Range -55 to+150 C Thermal Characteristics(Tc=25C unless otherwise noted) Symbol Parameter Max Unit RθJC Thermal Resistance,Junction to Case Per Leg 3.5 C /W Electrical Characteristics(Tc=25C unless otherwise noted) Symbol VRRM Parameter Maximum Repetitive Reverse Voltage IR Reverse Current VF Forward Voltage HUAKE semiconductors 2017.08 Test Conditons Min IR=100μA 200 VR =200V Tc=25C VR =200V Tc=125C IF=10A Tc=25C IF=10A Tc=125C IF=20A Tc=25C IF=20A Tc=125C 1/3 Max Unit V 0.1 5 0.98 0.88 1.08 0.98 mA V 编号：HK-WI-TD-004 版本/版次：B/0 MBRF20200CT Dual High Voltage Schottky Rectifier Typical Performance Characteristics Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current Figure 3. Junction Capacitance Figure 4. Power Derating HUAKE semiconductors 2017.08 2/3 编号：HK-WI-TD-004 版本/版次：B/0 MBRF20200CT Dual High Voltage Schottky Rectifier TO-220F Package Dimensions SYMBOL A A1 A2 A3 B1 B2 B3 C C1 C2 min 9.80 2.90 9.10 15.40 4.35 6.00 3.00 15.00 8.80 HUAKE semiconductors nom 7.00 2017.08 max 10.60 3.40 9.90 16.40 4.95 7.40 3.70 17.00 10.80 SYMBOL D D1 D2 D3 E E1 E2 E3 E4 α（度） 3/3 min 1.15 0.60 0.20 2.24 nom 2.54 0.70 UNIT：mm max 1.55 1.00 0.50 2.84 1.0×45° 0.35 2.30 30° 0.65 3.30 编号：HK-WI-TD-004 版本/版次：B/0