HY5012W

HY5012W/A N-Channel Enhancement Mode MOSFET Features • Pin Description 125V/300A RDS(ON)=2.9 m  (typ.) @ VGS=10V • • Avalanche Rated • Lead Free and Green Devices Available Reliable and Rugged (RoHS Compliant) G D S G TO-247A-3L D S TO-3P-3L Applications  Power Management for Inverter Systems. N Channel MOSFET Ordering and Marking Information Package Code W HY5012 A HY5012 Date Code Assembly Material YYXXXJWW G YYXXXJWW G YYXXX WW G : Lead Free Device W : TO-247A-3L A : TO-3P-3L Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 125 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C 55 to 175 °C TC=25°C 300 A TC=25°C 1100** A TC=25°C 300 TC=100°C 196 TC=25°C 500 TC=100°C 250 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case 0.3 RJA Thermal Resistance-Junction to Ambient 40 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed mJ 2000*** L=0.5mH Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=100V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY5012 Min. Typ. Max. VGS=0V, IDS=250A 125 - - VDS=125V, VGS=0V - - 1 - - 10 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 2 3 4 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=150A - 2.9 3.6 m ISD=150 A, VGS=0V - 0.8 1.3 V - 70 - ns - 134 - nC Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=150 A, dlSD/dt=100A/s 2 V1.0 HY5012W/A Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY5012 Min. Typ. Max. - 0.5 - - 16300 - - 1570 - - 930 - - 55 - - 49 - - 122 - - 98 - - 352 - - 46 - - 136 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=62.5 V, R G=6 , IDS=150A, VGS=10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=100V, VGS=10V, IDS=150A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. www.hymexa.com 3 V1.0 HY5012W/A Typical Operating Characteristics Power Dissipation Drain Current ID - Drain Current (A) Ptot - Power (W) 500 400 300 200 320 limited by package 280 240 200 160 120 100 80 o TC=25 C 0 0 o TC=25 C,VG=10V 40 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ID - Drain Current (A) 1000 it im )L n s(o Rd 100us 100 10ms 1ms 10 DC 1 0.1 10 1 100 400 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 1 Duty = 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.001 0.01 Mounted on minimum pad o RJA : 40 C/W Single 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com 4 V1.0 HY5012W/A Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 4.0 400 VGS= 6,7,8,9,10V 350 RDS(ON) - On - Resistance (m) 5.5V ID - Drain Current (A) 300 5V 250 200 4.5V 150 100 50 0 0.0 0.5 1.0 1.5 2.0 3.0 2.5 2.0 3.0 0 80 160 320 Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Vlotage 5.0 4.0 3.0 2.0 5 6 7 8 9 VGS - Gate - Source Voltage (V) www.hymexa.com 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 400 IDS =250A IDS=150A 4 240 ID - Drain Current (A) 6.0 1.0 VGS=10V VDS - Drain-Source Voltage (V) 7.0 RDS(ON) - On - Resistance (m) 2.5 3.5 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 5 V1.0 HY5012W/A Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.4 VGS = 10V 2.2 1000 IDS =150A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=175 C 100 o Tj=25 C 10 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 2.9m 0 25 50 1 0.0 75 100 125 150 175 0.6 0.8 1.0 1.2 VSD - Source-Drain Voltage (V) Capacitance Gate Charge 1.4 10 Frequency=1MHz 20000 VDS= 100V 9 VGS - Gate-source Voltage (V) Ciss 18000 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 22000 16000 14000 12000 10000 8000 6000 4000 Coss 2000 0 0.2 5 10 15 20 25 30 35 7 6 5 4 3 2 0 40 VDS - Drain - Source Voltage (V) www.hymexa.com 8 1 Crss 0 IDS= 150A 0 50 100 150 200 250 300 350 400 QG - Gate Charge (nC) 6 V1.0 HY5012W/A Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 7 V1.0 HY5012W/A Device Per Unit Package Type Unit Quantity TO-247A-3L Tube 30 Package Information TO-247A- 3L 6