ESD73034D-10/TR

ESD73034D ESD73034D 4-Lines, Bi-directional, Ultra-low Capacitance http//:www.sh-willsemi.com Transient Voltage Suppressors Descriptions The ESD73034D is an ultra-low capacitance TVS (Transient Voltage Suppressor) array designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data DFN2510-10L (Bottom view) and transmission lines from over-stress caused by ESD NC (Electrostatic Discharge). NC GND NC NC 10 9 8 7 6 1 2 3 4 5 The ESD73034D incorporates four pairs of ultra-low capacitance steering diodes plus a TVS diode. I/O1 I/O2 GND I/O3 I/O4 The ESD73034D may be used to provide ESD protection up to ±10kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 5.5A (8/20μs) according to IEC61000-4-5. 1 2 3, 8 4 5 The ESD73034D is available in DFN2510-10L package. Standard products are Pb-free and Halogen-free. Pin configuration (Top view) Features  Stand-off voltage: ±3.3V Max.  Transient protection for each line according to 10 TGYW IEC61000-4-2 (ESD): ±10kV (contact discharge) 1 IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 5.5A (8/20μs) Ultra-low capacitance: CJ = 0.2pF typ.  Low leakage current  Low clamping voltage: VCL = 8.7V typ. @ IPP = 16A (TLP)  Solid-state silicon technology YW = Date code Marking Order information Applications USB 3.0 and USB 3.1  HDMI 1.3, HDMI 1.4 and HDMI 2.0  Portable Electronics and Notebooks Will Semiconductor Ltd. 5 TG = Device code   6 Device Package Shipping ESD73034D-10/TR DFN2510-10L 3000/Tape&Reel 1 Revision 1.1, 2019/01/03 ESD73034D Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 33 W Peak pulse current (tp = 8/20μs) IPP 5.5 A ESD according to IEC61000-4-2 air discharge ±15 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature ±10 125 o -40~85 o 260 o -55~150 o TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG kV C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off Voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VHOLD VTRIG VBR VCLVRWM IBR ITRIG IR IR I ITRIG BR VBRVTRIG V VRWMVCL VHOLD IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.1, 2019/01/03 ESD73034D o Electrical characteristics (TA = 25 C, unless otherwise noted) Parameter Symbol Reverse maximum working voltage VRWM Reverse leakage current Reverse breakdown voltage Clamping voltage 1) Dynamic resistance 1) IR IT = 100μA VCL IPP = 16A, tp = 100ns RDYN 2) VCL Clamping voltage 3) VCL CJ Min. Typ. VRWM = 3.3V VBR Clamping voltage Junction capacitance Condition VESD = 8kV 9 Max. Unit 3.3 V 100 nA 12 V 8.7 V 0.38 Ω 10 V IPP = 1A, tp = 8/20μs 3.5 V IPP = 5.5A, tp = 8/20μs 6.0 V 0.28 pF VR = 1.5V, f = 1MHz 0.2 Notes: 1) TLP parameter: Z0 = 50 Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 1.1, 2019/01/03 ESD73034D o Typical characteristics (TA = 25 C, unless otherwise noted) Time to half-value: T2= 20s Current (%) Peak pulse current (%) 100 90 Front time: T1= 1.25 T = 8s 100 90 50 T2 10 10 0 0 tr = 0.7~1ns Time (s) T1 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 CJ - Junction capacitance (pF) 5.0 Pulse waveform: tp = 8/20s VC - Clamping voltage (V) t 60ns 30ns 20 T 4.5 4.0 3.5 3.0 0.35 f = 1MHz 0.30 0.25 0.20 0.15 0.10 2.5 1 2 3 4 5 0.05 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 VR - Reverse voltage (V) IPP - Peak pulse current (A) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 1000 % of Rated power Peak pulse power (W) 100 100 10 1 80 60 40 20 0 1 10 100 Pulse time (s) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 4 Revision 1.1, 2019/01/03 ESD73034D o Typical characteristics (TA = 25 C, unless otherwise noted) 10V/div 10V/div 20ns/div 20ns/div ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) 20 TLP current (A) 16 12 8 (-8kV contact discharge per IEC61000-4-2) Z0 = 50  tr = 2ns tp = 100ns 4 0 -4 -8 -12 -16 -20 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 1.1, 2019/01/03 ESD73034D Package outline dimensions DFN2510-10L Symbol Dimensions in millimeter Min. Typ. Max. A 0.50 0.55 0.60 A1 0.00 0.02 0.05 A3 Recommended Land Pattern (Unit: mm) 0.15 Ref. D 2.40 2.50 2.60 E 0.90 1.00 1.10 E1 0.50 0.60 0.50 0.50 Ref. b 0.15 0.20 0.25 b1 0.13 0.18 0.23 b2 0.35 0.40 0.45 e L 0.50 BSC 0.28 0.39 0.50 0.20 Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing 0.20 0.40 Will Semiconductor Ltd. group to ensure your PCB design guidelines are met. 6 Revision 1.1, 2019/01/03 ESD73034D TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 7 Q4 Revision 1.1, 2019/01/03